共查询到18条相似文献,搜索用时 140 毫秒
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聚焦离子束技术(FIB)是一种集形貌观测、定位制样、成份分析、薄膜淀积和无掩模刻蚀各过程于一身的新型微纳加工技术。几十年来,随着关键技术的不断突破和完善,达到了前所未有的发展,所突破的关键技术之一就是图形发生器的使用。 相似文献
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本文介绍了聚焦离子束(FIB)装置中图像采集及在微细加工及微区分析中的图形定位、控制,详细介绍了国产微通道板(MCP)在图像显示中的特点、作用及其应用经验和效果,介绍了计算机支持下的图形加工控制与显示系统。 相似文献
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聚焦离子束技术( focused ion beam,FIB)由于其高精度刻蚀、定点加工、实时成像等优势,常用于精密加工、TEM制样等领域。其工作机理通常为:刻蚀、淀积与成像。而基于FIB新的加工手段正在被探索和研究,其中就包括两种聚焦离子束致形变技术,分别为聚焦离子束应力引入致形变技术( FIB?stress induced deformation,FIB?SID)和聚焦离子束物质再分布致形变技术( FIB?material?redistribution induced deformation,FIB?MRD)。前者通过控制FIB辐照时离子注入与溅射之间的竞争关系实现悬臂梁的多角度弯曲,后者利用粒子与物质作用时的瑞利不稳定性构建纳米结构,在一定意义上扩充了聚焦离子束的应用范围。运用上述方法可以加工三维微纳螺旋,悬浮光滑纳米弦以及大规模阵列化纳米网孔等多样化微/纳功能构件,在微流控系统,太赫兹通信,光学天线等领域具有很强的应用前景。 相似文献
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聚焦离子束技术作为一种直接加工微纳米结构的工具,在很多领域有着重要的应用。但在实际应用中,它并不能总是如人所愿,加工出的结构有时会产生缺陷。如在切割截面时会形成倾斜侧壁、窗帘结构;在刻蚀平面结构时形成非均匀的底面;在利用气体注入系统诱导沉积生长结构后残留污染物等。本文将剖析聚焦离子束加工中这些常见缺陷产生的根源,探讨减轻或消除这些缺陷的方法。 相似文献
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本文介绍了二级透镜亚微米聚焦离子束系统中的合轴技术和聚焦检测技术,包括合轴的调整及其检测技术的原理和具体方法、离子束聚焦状态的跟踪检测技术,利用此技术可以快速准确地获得微细离子束。 相似文献
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聚焦离子束技术是一种集形貌观测、定位制样、成份分析、薄膜淀积和无掩模刻蚀各过程 于一身的新型微纳加工技术。它大大提高了微电子工业上材料、工艺、器件分析及修补的精度和速 度,目前已经成为微电子技术领域必不可少的关键技术之一。对聚焦离子束曝光技术作了介绍。 相似文献
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综述了聚焦离子束系统的结构和基本原理,介绍了国产化聚焦离子束系统的结构与特点。基于国产化聚焦离子束系统进行了硅材料刻蚀实验,研究了硅材料刻蚀速率与离子束流大小的关系,建立了刻蚀速率与束流大小的关系方程,进行了硅悬梁微结构刻蚀加工。结果表明,国产聚焦离子束系统可满足硅微悬梁结构加工的应用需要。 相似文献
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Focused Ion Beam (FIB) technology has become an indispensable enabling tool for micro nano fabrications. One important application is to use FIB for patterning conducting nanowires of metals down to a few tens of nanometre for applications such as interconnects, heaters and temperature nanosensors. A series of experiments on Au nanowires fabricated by FIB on SixNy membrane show that nanowires with width ?50 nm have structural instabilities. These are liquid like and first show-up as undulations in nanowire width with clearly defined wave lengths. For smaller widths (∼20 nm) the instabilities grow and the wires eventually break-up into spherical balls. Further experiments show that the nanowires can be made stable to smaller widths by the use of a Cr underlayer to enhance surface wetting. The observed behaviour is due to the Rayleigh-Plateau instability which occurs for systems in which surface energy dominates. 相似文献
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Rebecca Saive Lars Mueller Eric Mankel Wolfgang Kowalsky Michael Kroeger 《Organic Electronics》2013,14(6):1570-1576
We report on the influence of Focused Ion Beam (FIB) exposure on TIPS-pentacene layers which are often used in solution-processable organic field-effect transistors (OFETs) and in many cases yield a field-effect mobility in the order of 1 cm2/V s. We exposed TIPS-pentacene layers to a Ga+ ion beam and measured the device characteristics of OFETs. We observed a strong influence of the FIB on J–V characteristics of TIPS-pentacene-based devices and determined an increase in the OFET mobility and on–off ratio and a decrease of the threshold voltage. To further investigate the underlying process we analyzed FIB-exposed and unexposed TIPS-pentacene samples via X-ray Photoelectron Spectroscopy (XPS). Exposed samples show a clear Ga XPS signature and the C1s peak shifts about 400 meV towards smaller binding energies which is an indicator for a Fermi energy shift closer to the valence states and hence p-doping of TIPS-pentacene. With Scanning Kelvin Probe Microscopy (SKPM) we could clearly distinguish FIB exposed areas from the unexposed areas. For exposed areas the work function increases about 200 meV which is consistent with XPS measurements and again displays that the implanted Ga+ ions serve as p-dopants. Furthermore we took SKPM measurements on operating OFETs and could investigate a dramatic change in local conductance on FIB exposed areas. This demonstrates a novel way of nanopatterning conductive paths in organic semiconductors. 相似文献
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Fabrication of Silicon Microlens Arrays Using Ion Beam Milling 总被引:3,自引:0,他引:3
A spherical mask for the fabrication of microlens arrays was prepared by melt-ing photoresist,and the spherical photoresist shape was transferred into a silicon substrate using ion beam milling.The ion beam milling process was computer simulated using the Sig-mund ion beam sputtering theory of collision cascades.The experiment results show that mi-crolens arrays can be effectively formed at low substrate temperature of less than 200℃,Shapes and dimensions of photoesist masks and silicon microlens arrays were examined by the scanning electron microscope and tested by the surface stylus measurement. 相似文献
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从大角度离子注入机束线系统设计上的改进出发,对加/减速模式和多电荷注入等情况下的束能量纯度控制进行了阐叙,同时依靠大量的实验,从SIMS的实验数据来验证控制设计的合理性和有效性. 相似文献
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介绍了一种用于氧化物薄膜制备的射频离子柬辅助溅射镀膜设备,阐述了设备原理、组成、特点以及试验结果。通过使用射频离子源和射频中和器,解决了采用热灯丝离子源的同类设备中灯丝易被氧化的关键问题,适合于氧化物薄膜制备。 相似文献
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集成电路制造工艺技术种类繁多,包括光刻、刻蚀、氧化、扩散、溅射、封装等。作为代表性的先进工艺技术是电子束、离子束和光子束加工技术,俗称三束技术。对三束技术做了介绍。 相似文献