硅酸盐熔体团粒结构类声子振动的高温拉曼光谱研究

硅酸盐熔体是典型的近程有序,远程无序的准稳定态分数维体系,文章采用X射线小角散射(SAXS)、低波数拉曼光谱(LWRS)及高温拉曼光谱(HTRS)实时、原位分析等技术,对高温熔融法和溶胶凝胶法合成的CaO-Al₂O₃-SiO₂和Na₂O-Al₂O₃-SiO₂系列低维非晶硅酸盐试样进行了团粒结构粒度及其类声子振动频率的定量测定,获得了低温硅酸盐凝胶、高温硅酸盐熔体及其淬火玻璃相均具有纳米级(几个纳米至几十纳米)自相似团粒结构和类声子振动模的重要结论,进而建立了测定高温熔体介观团粒结构粒度的HTRS测定法,结果表明硅酸盐熔体的团粒结构粒度在高温下均会比其室温玻璃相的团粒尺度小,且高温熔体的网络结构基元也向桥氧数减少之基元转变。这些结论为探索自然界岩浆的地球化学特征、岩浆的结晶和演化以及低维硅酸盐材料结构性能的改进提供重要理论依据及信息。     

n-SiC拉曼散射光谱的温度特性

测量了采用离子注入法得到掺N的n-SiC晶体从100—450 K的拉曼光谱. 研究了SiC一级拉曼谱、电子拉曼散射谱及二级拉曼谱的温度效应. 实验结果表明,大部分SiC一级拉曼峰会随温度升高向低波数方向移动,但声学模红移(峰值位置向低频方向移动)的幅度较光学模小. 重掺杂4H-SiC的纵光学声子等离子体激元耦合(LOPC)模频率随温度升高表现出先蓝移(峰值位置向高频方向移动)后红移的变化趋势,表明LOPC模的温度特性不仅会受到非简谐效应的影响,还与实际已离化杂质浓度有关. 电子拉曼散射峰线宽随温度升高而增 关键词： 碳化硅 温度 纵光学声子等离子体激元耦合模 电子拉曼散射     

分子束外延PbTe单晶薄膜的反常拉曼光谱研究

采用分子束外延(MBE)方法在BaF₂(111)衬底上生长了高质量的PbTe单晶薄膜， 拉曼光谱测量观察到了表面氧化物的振动模、布里渊区中心(q≈0)纵光学(LO)声子振动模以 及声子-等离子激元耦合模振动.随着显微拉曼光谱仪激光光斑聚焦深度的改变，各拉曼散射 峰的峰位、积分强度、半高宽等都表现出不同的变化趋势. 随着激光光斑聚焦位置从样品表 面上方3μm处变化到表面下方3μm处，PbTe外延薄膜的LO声子频率从119cm^-1移 动到124cm^{-1关键词： PbTe外延薄膜 拉曼散射 纵光学声子}     

声子色散和磁场对极性晶体中极化子自陷能的影响

利用线性组合算符和幺正变换相结合的方法,研究了声子色散和磁场对极性晶体中极化子振动频率和自陷能的影响.计及纵光学(LO)声子色散,在抛物近似下导出了极性晶体中极化子自陷能随电子-纵光学声子耦合常数、回旋共振频率和声子色散系数之间的变化关系.数值计算结果表明极化子自陷能随电子-纵光学声子耦合常数、回旋共振频率和声子色散系数的增大而增大.     

高压固相复分解反应法合成GaN晶体的拉曼散射研究

高压固相复分解(HPSSM)反应法是一种新型的金属氮化物合成方法。本文对HPSSM法合成的GaN晶体进行了高压、高温和低温原位拉曼散射研究。给出了HPSSM GaN各拉曼振动模的Grüneisen参数以及一阶拉曼频移和拉曼模半峰宽随温度变化的关系。通过SCM空间相关模型对常温常压下GaN晶体拉曼光谱拟合,得到其空间关联长度;并利用三声子耦合模型拟合变温拉曼光谱。实验所获得的物理参数同MOCVD GaN的参数进行了比较。     

静压下(CdTe)_2(ZnTe)_4-ZnTe多量子阱结构的多声子共振拉曼散射

用加静高压的方法改变光学能隙来实现共振条件。在以(CdTe)_2(ZnTe)_4短周期超晶格为阱层,(ZnTe)_(4)为垒层的多量子阱结构中观察到高达四阶的类 ZnTe 纵光学声子模的多声子共振拉曼散射。通过对拉曼位移随压力变化的分析,发现在与(CdTe)_2(ZnTe)_4短周期超晶格共振时测得的类ZnTe 纵光学声子模的频率比与 ZnTe 势垒层共振时测得的 ZnTe 纵光学声子模的频率低4cm~(-1)。并将它归结为在短周期超品格中纵光学声子模的限制效应。在与短周期超品格严格的2LO 声子出射共振条件下观察到了类 CdTe 的2LO 声子的共振拉曼峰。     

LPE碲镉汞薄膜的显微Raman谱与显微荧光谱分析

利用Raman显微镜系统对4块用液相外延(LPE)方法在Cd0.96Zn0.04Te衬底上生长的Hg0.8Cd0.2Te外延薄膜样品，在100～5 000cm^-1光谱范围进行测量，在实验曲线中除了观察到与碲镉汞材料晶格振动相符的类．HgTe的光学振动横模(TO1模)和纵模(LO1模)的Raman散射峰、类-CdTe光学振动横模(TO2模)和纵模(LO2模)混合的Raman散射峰以及来源于TO1 LO1的二级Raman散射峰外，在1 000～5 000cm^-1光谱范围首次发现了LPE碲镉汞薄膜的显微荧光峰，该显微荧光的发光范围换算为电子伏特标度为1．34～1．83eV．发光中心位于2750cm^-1即1.62eV，发光峰的半高宽(FWFIM)约为0．25eV。通过分析指出．该显微荧光来源于碲镉汞外延层中阴性离子空位与材料导带底的共振能级的发光。     

分子束外延n-GaAs/SI-GaAs薄膜材料的拉曼光谱研究

用分子束外延(MBE)技术, 在GaAs(100)衬底上生长了不同Si掺杂浓度（从1016 cm-3到1018 cm-3）的n-GaAs薄膜。通过在室温下拉曼光谱的测量对n-GaAs薄膜的谱形进行了分析,拉曼位移出现了明显的移动,光学横模TO峰相对的增强,光学纵模LO峰相对的减弱。文章分析了原因这是由于Si掺杂浓度不断的提高,致使界面失配位错不断地提高造成的,内部应力也在不断的增大,原来的晶格振动平衡被破坏,四价Si替代了三价Ga致使谱线移动。并且由于横声子模具有Raman活性,横声子模被相对的增强了。实验结果与理论是互相吻合的。     

ZnSe－ZnS应变超晶格光学振动模的研究

本文给出了ＣａＡｓ衬底上生长的ＺｎＳｅ－ＺｎＳ应变超晶格的室温Ｒａｍａｎ分析，观测了该超晶格中ＺｎＳｅ子层和ＺｎＳ子层的纵光学振动模（ＬＯ），首次发现在一些样品中ＺｎＳｅ子层的纵光学声子模ＬＯＺｎＳ出现红移，另一些样品中ＬＯＺｎＳｅ出现蓝移，而ＺｎＳ子层的ＬＯＺｎＳ总是向低波数方向移动，并利用限制效应和应变效应给出了解释。     

黑磷的多声子共振拉曼散射

黑磷由于具有独特的各向异性而受到广泛的关注.声子色散和电子能带结构的研究对于理解黑磷的性质及其在下一代各向异性纳米光电子器件中的应用有促进作用.拉曼光谱作为材料的指纹谱,可提供材料声子色散以及电子能带结构等信息.根据拉曼选择定则,多声子(两个或两个以上的声子)拉曼散射光谱可以探测整个布里渊区内的声子态密度.然而,一般来说,相比于一阶拉曼散射,高阶拉曼散射具有极低的强度.为了克服这种限制,本文通过多个激光波长来激发黑磷的拉曼光谱,观测到了丰富的二阶和三阶拉曼模.同时,采用特定的偏振配置避免了黑磷光学各向异性所导致的双折射效应对拉曼强度的影响,结合声子色散及其对称性对680—930 cm^–1范围内的多声子拉曼峰进行了指认,这表明非布里渊区中心的声子对黑磷的二阶和三阶拉曼散射有重要贡献.本文所提出的研究高阶拉曼散射的方法对研究其他各向异性材料中的共振拉曼光谱具有借鉴作用.     

Phonon-plasmon coupled modes in hetero-superlattices

The spectrum of coupled phonon-plasmon modes is considered in a mesoscopic system of thin conducting planes separated by insulating layers. The reflectance of such a sample in the infrared region is calculated. Reflectance minima are determined by the longitudinal and transverse phonon frequencies in the insulating interlayers and by the van Hove singularities of the coupled modes. Measuring the differential Raman cross section allows the spectrum of these modes to be found directly.     

Interlayer vacancy effects on the phonon modes in AB stacked bilayer graphene nanoribbon

We explore the effects of interlayer vacancy defects on the vibrational properties of Bernal (AB) stacking bilayer armchair graphene nanoribbons (BiAGNRs) using the forced vibrational method. It is observed that the Raman active longitudinal optical (LO) phonon of BiAGNR is shifted downward with the decrease of the ribbon width and an increase of the vacancy concentrations. We find that vacancies induce some new peaks in the low frequency regime of the phonon density of states. Our calculated typical mode patterns elucidate that the localized transverse optical phonon at the K-point is shifted towards the defect sites from the edges with increased vacancy concentrations. In addition, the impact of defect induced phonon modes on the specific heat capacity and thermal conductivity of BiAGNRs are discussed. These results present a new way of understanding the heat dissipation phenomena of graphene-based high-performance nanodevices and to clarify the Raman and the experiments related to the phonon properties.     

纳米氮化镓的拉曼光谱研究

纳米氮化镓的拉曼光谱研究罗薇邹广田崔启良赵永年崔田李红东韩杰（吉林大学超硬材料国家重点实验室长春１３００２３）ＳｔｕｄｙｏｆＲａｍａｎＳｐｅｃｔｒａｏｎＧａＮＮａｎｏｃｒｙｓｔａｌＬｕｏＷｅｉ，ＺｏｕＧｕａｎｇｔｉａｎ，ＣｕｉＱｉｌｉａｎｇ，Ｚｈａｏ...     

Raman spectroscopy of ZnS nanostructures

We report Raman scattering results of wurtzite ZnS nanowires, nanocombs, and nanobelts. The Raman spectrum obtained from ZnS nanowires exhibits first‐order phonon modes at 272, 284, and 350 cm⁻¹, corresponding to A₁/E₁ transverse optical, E₂ transverse optical, and A₁/E₁ longitudinal optical phonons, respectively. Several multiphonon modes are also observed. The longitudinal optical phonon mode varies in wavenumber for nanocombs and nanobelts, indicating that the residual strain varies during the morphological change from ZnS nanowires to nanocombs and ultimately to nanobelts. Interestingly, a surface optical (SO) phonon mode varies in wavenumber depending on the shape and surface roughness of the ZnS nanostructures. The surface modulation wavelengths of the ZnS nanowires, nanocombs, and nanobelts are estimated using the SO phonon dispersion relations and the observed SO phonon wavenumbers. Copyright © 2012 John Wiley & Sons, Ltd.     

Wave spectra in solid and liquid complex (dusty) plasmas

Spectra of longitudinal and transverse waves were obtained experimentally in liquid and solid two-dimensional complex (dusty) plasmas at different kinetic temperatures. As the temperature increased and the phase state of the plasma changed from solid to liquid, the phonon spectra of both longitudinal and transverse modes broadened (especially at high wave numbers), indicating increased damping. The transverse mode disappeared and a thermal (compressional) mode appeared.     

Infrared absorption and Raman scattering on coupled plasmon-phonon modes in superlattices

We theoretically consider a superlattice formed by thin conducting layers spatially separated between insulating layers. The dispersion of two coupled phonon-plasmon modes of the system is analyzed by using the Maxwell equations, with the retardation effect included. Both transmission for the finite plate and the absorption for the semi-infinite superlattice in the infrared are calculated. Reflectance minima are determined by the longitudinal and transverse phonon frequencies in the insulating layers and by the density-state singularities of the coupled modes. We also evaluate the Raman cross section from the semi-infinite superlattice. The text was submitted by the authors in English.     

Effect of normal processes on thermal conductivity of germanium,silicon and diamond

The effect of normal scattering processes is considered to redistribute the phonon momentum in (a) the same phonon branch — KK-S model and (b) between different phonon branches — KK-H model. Simplified thermal conductivity relations are used to estimate the thermal conductivity of germanium, silicon and diamond with natural isotopes and highly enriched isotopes. It is observed that the consideration of the normal scattering processes involving different phonon branches gives better results for the temperature dependence of the thermal conductivity of germanium, silicon and diamond with natural and highly enriched isotopes. Also, the estimation of the lattice thermal conductivity of germanium and silicon for these models with the consideration of quadratic form of frequency dependences of phonon wave vector leads to the conclusion that the splitting of longitudinal and transverse phonon modes, as suggested by Holland, is not an essential requirement to explain the entire temperature dependence of lattice thermal conductivity whereas KK-H model gives a better estimation of the thermal conductivity without the splitting of the acoustic phonon modes due to the dispersive nature of the phonon dispersion curves.      

一种基于荧光材料的聚合物白光发光二极管

制备了一种基于荧光聚合物共混的单发光层聚合物白光发光二极管.器件结构为铟锡氧化物/苯磺酸掺杂聚乙烯基二氧噻吩/发光层/ 1,3,5-三(N-苯基-2-苯并咪唑-2)苯41/Ba/Al,蓝光材料芴-氟化喹喔啉共聚物(PF-BPFQ5)、绿光材料苯基取代的聚对苯乙炔(P-PPV)和红光材料聚(2-甲氧基-5-(2′-乙基己氧基)-1,4-对苯乙炔)(MEH-PPV)共混为发光层.当PF-BPFQ5,P-PPV,MEH-PPV的质量比例为100∶06∶06时,获得标准的白光,色坐标为（033 关键词： 聚合物发光二极管 白光 共混