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1.
金属Fe薄膜的PLD制备及其非线性光学性质研究   总被引:3,自引:0,他引:3       下载免费PDF全文
采用脉冲激光沉积(PLD)技术在MgO基片上制备了金属Fe薄膜.利用原子力显微镜研究了不同制备温度对薄膜表面形貌的影响.x射线衍射分析表明沉积温度大于500℃时,Fe薄膜在MgO基片上有很好的结晶性,并有单一取向.通过z扫描方法测量了超薄Fe膜的光学非线性,得到了Fe薄膜的非线性折射率n2=709×10-5cm2/ kW,非线性吸收系数 β=-552×10-3cm/W. 关键词: Fe薄膜 非线性 脉冲激光沉积  相似文献   

2.
脉冲激光气相沉积法制备的非晶CH薄膜特性分析   总被引:1,自引:1,他引:0       下载免费PDF全文
采用脉冲激光气相沉积(PLD)法,研究了氢气压强对非晶CH薄膜性能的影响。原子力显微镜图和白光干涉图显示,薄膜表面平整致密,随着氢气压强增大,粗糙度变大。拉曼光谱分析表明,氢气压强增加,G峰和D峰位置都在向高波数方向移动。傅里叶变换红外光谱分析显示,薄膜中存在sp3—CH2和sp2—CH等基团。最后,采用PLD漂浮法在最优参数氢气压强为0.3 Pa下,成功制备了不同厚度(100~300 nm)、满足一定力学强度、无明显宏观缺陷的自支撑CH薄膜。  相似文献   

3.
The conditions for achievement of high resolving power of depth selective conversion electron Mössbauer spectroscopy method at a combined installation ‘electron spectrometer–nuclear gamma-resonance spectrometer’ have been obtained. There has been made a considerable step in development of the method at its realization at a magnetic sector electron spectrometer with double focusing, equipped with electron source (a sample under investigation) of large-area and position-sensitive detector. The paper presents a prospective symmetrical version of a magnetic sector electron spectrometer that allows realizing more completely possibilities of the method. It is noted that the proposed method is particularly valuable for investigations of nanosystems, nanostrutures that contain Mössbauer nuclei.  相似文献   

4.
Thin films of zinc oxide have been deposited by reactive pulsed laser ablation of Zn and ZnO targets in presence of a radio frequency (RF) generated oxygen plasma. The gaseous species have been deposited at several substrate temperatures, using the on-axis configuration, on Si (1 0 0). Thin films have been characterized by scanning electron microscopy, atomic force microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and infrared spectroscopy. A comparison among conventional PLD and reactive RF plasma-assisted PLD has been performed.  相似文献   

5.
Highly transparent conductive Dy2O3 doped zinc oxide (ZnO)1-x(Dy2O3)x nanocrystalline thin films with x from 0.5% to 5% have been deposited on glass substrate by pulsed laser deposition technique. The structural, electrical and optical properties of Dy2O3 doped thin films were investigated as a function of the x value. The experimental results show that the Dy concentration in Dy-doped ZnO thin films has a strong influence on the material properties especially electrical properties. The resistivity decreased to a minimum value of 5.02 × 10−4 Ω cm with x increasing from 0.5% to 1.0%, then significantly increased with the further increasing of x value. On the contrary, the optical direct band gap of the (ZnO)1-x(Dy2O3)x films first increased, then decreased with x increasing. The average transmission of Dy2O3 doped zinc oxide films in the visible range is above 90%.  相似文献   

6.
采用脉冲激光气相沉积(PLD)法,研究了氢气压强对非晶CH薄膜性能的影响。原子力显微镜图和白光干涉图显示,薄膜表面平整致密,随着氢气压强增大,粗糙度变大。拉曼光谱分析表明,氢气压强增加,G峰和D峰位置都在向高波数方向移动。傅里叶变换红外光谱分析显示,薄膜中存在sp3—CH2和sp2—CH等基团。最后,采用PLD漂浮法在最优参数氢气压强为0.3 Pa下,成功制备了不同厚度(100~300 nm)、满足一定力学强度、无明显宏观缺陷的自支撑CH薄膜。  相似文献   

7.
Indium tin oxide (ITO) thin films were prepared by pulsed laser deposition (PLD) on glass substrate at room temperature. Structural, optical, and electrical properties of these films were analyzed in order to investigate its dependence on oxygen pressure, and rapid thermal annealing (RTA) temperature. High quality ITO films with a low resistivity of 3.3 × 10−4 Ω cm and a transparency above 90% were able to be formed at an oxygen pressure of 2.0 Pa and an RTA temperature of 400 °C. A four-point probe method, X-ray diffraction (XRD), atomic force microscopy (AFM), and UV-NIR grating spectrometer are used to investigate the properties of ITO films.  相似文献   

8.
Alternate pulsed laser deposition from the host (Al2O3) and dopant (Er, Yb) targets has been used to prepare artificially nanostructured films in which the rare earth ion-ion separation is controlled in the nanometer scale in order to control energy transfer between ions. One series of films was prepared in the standard on-axis configuration, i.e. a static substrate being centred with respect to the plasma expansion axis. A second series of films was prepared by rotating the substrate with respect to a shifted axis parallel to the plasma expansion one (off-axis configuration). The latter configuration leads to films with enhanced thickness and Er related photoluminescence intensity uniformity. More interestingly, the Er related photoluminescence lifetime in as-grown films increases up to 2.5 ms, which is much higher than the maximum value of 1 ms obtained for the on-axis configuration films. This enhancement is discussed in terms of a decrease of defect density when using the off-axis configuration.  相似文献   

9.
Preferentially-oriented aluminum nitride (AlN) films are grown directly on natively-oxidized Si (100) substrate by pulsed laser deposition (PLD) in nitrogen (N2) environment. The AlN preferential orientation changes from (002) to (100) with increasing N2 pressure. Such different behaviors are discussed in terms of deposition-rate-dependent preferential orientation, kinetic energy of depositing species and confinement of laser plume. Finally, sample deposited at 0.9 Pa is proved to have the highest (002) peak intensity, the lowest FWHM value, the highest deposition rate and a relatively low RMS roughness (1.138 nm), showing the optimal growth condition for c-axis-oriented AlN growth at this N2 pressure.  相似文献   

10.
The magnetic properties of strontium hexaferrite (SrFe12O19) films fabricated by pulsed laser deposition on the Si(100) substrate with Pt(111) underlayer have been studied as a function of film thickness (50–700 nm). X-ray diffraction patterns confirm that the films have c-axis perpendicular orientation. The coercivities in perpendicular direction are higher than those for in-plane direction which indicates the films have perpendicular magnetic anisotropy. The coercivity was found to decrease with increasing of thickness, due to the increasing of the grain size and relaxation in lattice strain. The 200 nm thick film exhibits hexagonal shape grains of 150 nm and optimum magnetic properties of Ms=298 emu/cm3 and Hc=2540 Oe.  相似文献   

11.
We report the first observation of a laser-produced vibration with the aid of Mössbauer techniques. Thin platelets of MgO single crystals were doped by diffusion of 57Fe atoms. The illumination of the MgO:57Fe sample with a pulsed Nd:YAG laser produced a significant broadening of the Mössbauer spectrum. In order to find out what caused these changes, we performed a series of time-domain experiments, in which the Mössbauer spectra were collected only during a 2.5 μs gate interval. This gate interval was swept from 5 μs to 190 μs over the time interval between the two laser pulses. After laser irradiation, the position of the Mössbauer line was found to be changing in time as a decaying oscillations of well-defined frequency, which can be due to the vibration of the sample induced by the laser pulse.  相似文献   

12.
Titanium oxide thin films are prepared at a substrate temperature of 250 °C by electron-beam evaporation and ionassisted deposition. The effects of thermal annealing temperatures from 100 to 450 °C on the optical and mechanical properties are studied. The optical and mechanical properties include refractive indices, extinction coefficients, residual stress, surface roughness and crystallization. Experimental results show these properties of titanium oxide films clearly depend on the thermal annealing process.  相似文献   

13.
采用脉冲激光沉积(PLD)方法在Si(100)衬底上制备了NaF薄膜。在激光重复频率2 Hz,能量密度3 J/cm2,本底真空度5×10-5 Pa的条件下,研究衬底温度对薄膜沉积速率及结构的影响。台阶仪分析表明:薄膜的沉积速率随衬底温度增加呈指数函数增加,算出NaF薄膜的反应激活能为48.67 kJ/mol。原子力显微镜分析表明:薄膜致密而光滑,均方根粗糙度为0.553 nm。扫描电镜截面微观形貌分析表明:薄膜呈现柱状结构。X射线衍射分析表明:NaF薄膜为面心立方晶体结构,并具有显著的择优取向;当衬底温度约为400 ℃时,平均晶粒尺寸最大(129.6 nm),晶格微应变最小(0.225%)。  相似文献   

14.
Aiming at improving the durability of anodic electrochromic nickel oxide thin films, Ni-M-O (M = Co, Ta) thin films were grown by pulsed laser deposition (PLD), using optimized conditions, namely room temperature and 10−1 mbar oxygen pressure. For low Co and Ta contents (<5%), both additions lead to a loss of the [1 1 1] preferred orientation of the NiO rock-salt structure followed by a film amorphization with increasing Ta amount. Among the two series of metal additions (M ≤ 20%), the Ni-Co-O (5% Co) and Ni-Ta-O (10% Ta) thin films show the highest electrochemical performances especially in respect of improved durability. If the enhanced properties are associated with a limited dissolution of the oxidized phase for the Ni-Ta-O system, the opposite trend is observed for the Ni-Co-O system as compared to pure NiO.  相似文献   

15.
秋沉沉  张昕  周乾飞  吴晓京 《物理》2013,42(12):873-880
Sb2Te3(ST)薄膜虽然具有高结晶速度和低结晶温度(~132℃)等优点,但由于复位电压过高,无法直接用于制备相变存储器件。文章作者尝试使用脉冲激光沉积法(PLD)制备了氮掺杂的Sb2Te3薄膜。用原子力显微镜(AFM)对此薄膜进行测试的结果表明,脉冲激光沉积法制备的生成态ST薄膜和氮掺杂ST薄膜表面粗糙度分别为0.12 nm和0.58 nm,表面较为平整。研究表明,PLD法制备的氮掺杂ST薄膜具有更好的组分稳定性,可显著提高薄膜低阻态电阻值,降低复位功耗,氮掺杂量在6 at%的ST薄膜的置位电压和复位电压适中,显示出较好的综合性能。  相似文献   

16.
In this work, we have fabricated lead selenide (PbSe) thin films by the pulsed laser deposition method on Si/SiO2 substrates and investigated the effect of oxygen annealing (sensitization) in these films. The oxygen-sensitized films show high responsivity in the visible (VIS) and the near-infrared (NIR) region at room temperature without cooling. We also demonstrate the effective surface oxidation of PbSe thin films during the oxygen annealing process without treated with commonly used halogens that leads to a better photoresponse in these PbSe films.  相似文献   

17.
Pulsed laser deposited mixed hydroxyapatite (HA)/calcium phosphate thin films were prepared at room temperature using KrF laser source with different laser fluence varying between 2.4 J/cm2 and 29.2 J/cm2. Samples deposited at 2.4 J/cm2 were partially amorphous and had rough surfaces with a lot of droplets while higher laser fluences showed higher level of crytallinity and lower roughness of surfaces of obtained samples. Higher laser fluences also decreased ratio Ca/P of as-deposited samples. X-ray photoelectron spectroscopy (XPS) revealed traces of carbonate groups in obtained samples, which were removed after thermal annealing. The decomposition of HA into TCP was observed to start at about 400 °C. The formation of new crystalline phase of HA was found after annealing as well. The cracks observed on surface of sample deposited at 29.2 J/cm2 after annealing indicated that the HA/ calcium phosphate films deposited at higher laser energy densities were probably more densed.  相似文献   

18.
CdS thin films have been grown on Si(1 1 1) and quartz substrates using femtosecond pulsed laser deposition. X-ray diffraction, atomic force microscopy, photoluminescence measurement, and optical transmission spectroscopy were used to characterize the structure and optical properties of the deposited CdS thin films. The influence of the laser fluence (laser incident energy in the range 0.5–1.5 mJ/pulse) on the structural and optical characterizations of CdS thin films has been studied. The results indicate that the structure and optical properties of the CdS thin films can be improved as increasing the per pulse output energy of the femtosecond laser to 1.2 mJ. But when the per pulse output energy of the femtosecond laser is further increased to 1.5 mJ, which leads to the degradation of the structure and optical properties of the CdS thin films.  相似文献   

19.
Nd-doped BiFeO3 thin films were grown by pulsed laser deposition on quartz substrate and their structural, optical and magnetic properties have been studied. X-ray diffraction analysis revealed that Nd addition caused structural distortion even with 5% of Nd concentration, additional secondary phase appeared in all samples but its intensity was greatly reduced with Nd addition. Doping-induced variations in texture and structure modifying both magnetic and optical properties of BiFeO3 thin films. The energy band gap decreases while the refractive index increases with addition of Nd3+ in BiFeO3 for Bi3+. These variations in energy band gap and refractive index have been explained on the basis of density of states and increase in disorders in the system. All the samples were found to exhibit ferromagnetism at room temperature and the saturation magnetization increases with the increase in structural distortion with addition of Nd. Finally, Nd-doping modifies the physical properties of BiFeO3 in comparison to undoped BiFeO3 thin films.  相似文献   

20.
Influence of annealing temperature on the properties of Sb-doped ZnO thin films were studied. Hall measurement results indicated that the Sb-doped ZnO annealed at 950 °C was p-type conductivity. X-ray diffraction (XRD) results indicated that the Sb-doped ZnO thin films prepared at the experiments are high c-axis oriented. It was worth noting that p-type sample had the worst crystallinity. The measurements of low-temperature photoluminescence (PL) spectra indicate that the sample annealed at the temperatures of 950 °C showed strong acceptor-bound exciton (A0X) emission, and confirmed that it is related to Sb-doping by comparing with the undoped ZnO low-temperature PL spectrum.  相似文献   

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