Effect of Annealing on the Electrical Properties of CuxS Thin Films

Copper sulphide CuS was deposited on three substrates; glass, Indium Tin Oxide (ITO) and Ti by using spray pyrolysis deposition (SPD). After depositing CuS thin films on the substrates at 200 °C, they were annealed at 50, 100, 150, and 200 °C for 1 hour. Structural measurements revealed covellite CuS and chalcocite Cu₂S phases for thin films before and after annealing at 200 °C with changes in intensities, and only covellite CuS phase for thin films after annealing at 50, 100, and 150 °C. Morphological characteristics show hexagonal-cubic crystals for the CuS thin film deposited on glass substrate and plates structures for films deposited on ITO and Ti substrates before annealing, these crystals became bigger in size and there were be oxidation and some agglomerations in some regions with formation of plates for CuS on glass substrate after annealing at 200 °C. For Hall Effect measurements, thin films sheet resistivity and mobility increased after annealing while the carrier concentration decreased. Generally, the thin film deposited on ITO substrate had the lowest resistivity and the highest carrier concentration before and after annealing. The thin film deposited on Ti substrate had the highest mobility before and after annealing, which makes it the best thin film for device performance. The objective of this research is to show the improvement of thin films electrical properties especially the mobility after annealing those thin films.     

Effect of negative substrate bias on HWCVD deposited nanocrystalline silicon (nc-Si) films

The influence of the negative substrate bias on the interfacial and microstructural characteristics of nanocrystalline silicon (nc-Si) thin films was deposited by hot wire chemical vapor deposition (HWCVD). Structural characterization of nc-Si films was performed by small angle X-ray diffraction (SAXRD), Raman spectroscopy, X-ray reflectivity (XRR) and field emission scanning electron microscopy (FESEM). Crystalline fraction and crystallite size increases from 61.31 to 74.13% and 13.3 to 21.6 nm, respectively, with an increasing negative bias from 0 to ?200 V. Furthermore, the deposition rate of nc-Si films increases from 25 to 68 nm/min by increase of negative substrate bias from 0 to ?200 V.     

Thickness dependent physical properties of close space evaporated In2S3 films

In recent years, In₂S₃ is considered as a promising buffer layer in the fabrication of heterojunction solar cells. Film thickness is one of the important parameters that alters the physical characteristics of the grown layers significantly. The effect of film thickness on the structural, morphological, optical and electrical properties of close space evaporated In₂S₃ layers has been studied. In₂S₃ thin films with different thicknesses in the range, 100–700 nm were deposited on Corning glass substrates at a constant substrate temperature of 300 °C. The films were polycrystalline exhibiting strong crystallographic orientation along the (103) plane. The deposited films showed mixed phases of both cubic and tetragonal structures up to a thickness of 300 nm. On further increasing the film thickness, the layers showed only tetragonal phase. With increase of film thickness, both the crystallite size and surface roughness in the films were found to be increased. The optical constants such as refractive index and extinction coefficient of the as-grown layers have been calculated from the optical transmittance data in the wavelength range, 300–2500 nm. The optical transmittance of the films was decreased from 82% to 64% and the band gap varied in the range, 2.65–2.31 eV with increase of film thickness. The electrical resistivity as well as the activation energy was evaluated and found to decrease with film thickness. The detailed study of these results was presented and discussed.     

Substrate dependent structure and in-plane dielectric properties of Ba(Sn0.15Ti0.85)O3 thin films

The structure, microstructure and in-plane dielectric properties of Barium tin titanate Ba(Sn_0.15Ti_0.85)O₃ (BTS) thin films grown on (100) LaAlO₃ (LAO) and (100) MgO single crystal substrates through sol–gel process were investigated. The films deposited on (100) LAO substrate exhibited a strong (100) preferred orientation while the film deposited on (100) MgO substrate showed polycrystalline structure. The in-plane ɛ–T measurements reveal that the films grown on (100) LAO substrate exhibited an obvious room-temperature ferroelectric state, while the film grown on MgO substrate showed paraelectric state in the temperature range of 10–130 °C. A high tunability of 52.11% was observed for the BTS films deposited on (100) LAO substrate at the frequency of 1 MHz with an applied electric field of 80 kV/cm, which is about two times larger than that of the BTS films deposited on (100) MgO substrate. The obvious differences in the dielectric properties could be attributed to the stress in the films, which come from lattice mismatch and difference in the thermal expansion coefficients between the film and substrates. This work clearly reveals the highly promising potential of BTS films for application in tunable devices.     

Facile synthesis of flat crystal ZnO thin films by solution growth method: A micro-structural investigation

Flat crystal ZnO thin films were prepared by chemical bath deposition technique onto glass substrates. XRD patterns of the films deposited at about 80 °C and annealed at 200 °C for 1 h in oxygen environment revealed the existence of polycrystalline hexagonal wurtzite phase with c-axis orientation of crystallites in the films. The crystallite size and lattice strain from X-ray line broadening profile were evaluated using the Scherrer method and Williamson–Hall method. Structural parameters such as dislocation density, stacking faults probability, lattice constants, lattice stress, unit cell volume, internal parameter, texture and number of crystallites per unit area have also been calculated. Surface morphology of the films was analyzed by scanning electron microscopy and atomic force microscopy. Photoluminescence spectrum at room temperature exhibited two luminescence centers, one is for UV emission (near band edge emission) located at 3.18 eV and another is for deep level emission located at 2.56 eV.     

Si-doped carbon nanostructured films by pulsed laser deposition from a liquid target

Ablation of a silicone oil, Dow Corning's DC-705 with laser pulses of sub-ps duration in high vacuum is a novel approach to fabrication of Si-doped carbon nanocomposite films. Gently focused, temporally clean 700 fs pulses @ 248 nm of a hybrid dye/excimer laser system produce power densities of the order of 10¹¹–10¹² W cm^?2 on the target surface. The evolution of the chemical structure of film material is followed by comparing Fourier Transformed Infrared and X-ray Photoelectron spectra of films deposited at temperatures between room temperature and 250 °C. Despite the low thermal budget technique, in the spectrum of films deposited at room temperature the fingerprint of the silicone oil can clearly be identified. With increasing substrate temperature the contribution of the features characteristic of the oil gradually diminishes, but does not completely disappear even at 250 °C. This result is intriguing since the chance of oil droplets to survive in their original liquid form on the hot surface should be minimal. The results of the X-ray Photoelectron Spectroscopy suggest that the chemical structure of the film material resembles that of the oil. Both reflection mode optical microscopy and low magnification Scanning Electron Microscopy reveal that the films are inhomogeneous: areas of lateral dimensions ranging from a few to tens of micrometers, characterized by different contrasts can be identified. On the other hand, surface mapping by Scanning Electron and Atomic Force Microscopy unambiguously proves that all films possess a solid surface consisting of nanoparticles of less than 100 nm dimension, without the presence of any drop of oil. Possible explanations of the puzzling results can be that the films are polymers consisting mainly of the molecules of the target material, or composites of solid C:Si nanoparticles and oil residues.     

Raman spectroscopic study on boron-doped silicon nanoparticles

Raman analyses were performed on thin films prepared from B-doped Si nanoparticles with an average diameter of 15 nm using the spin-coating method. The resulting spectrum exhibited a broad band with a peak near 520 cm⁻¹. The band was decomposed into three bands corresponding to the crystalline, grain boundary (GB), and amorphous regions by the least-squares band-fitting method based on the three Voigt bands. The fractions of the crystalline, GB, and amorphous regions were 37%, 35%, and 28%, respectively. A spherical particle exhibited an ordered crystalline core surrounded by a disordered shell in a transmission electron microscope (TEM) image. The crystalline fraction of the 15-nm B-doped Si nanoparticle film was much lower than that of the 19-nm P-doped Si nanoparticle film. This result suggested that the B-doping mechanism was different from that of P-doping. The temperature of the sample was estimated from the ratio of the peak intensities of anti-Stokes to Stokes Raman bands (I^AS/I^S) observed near 520 cm⁻¹. The temperature of the B-doped Si nanoparticle film upon irradiation at a power density of 4.6 kW/cm² was 298 °C, whereas the temperature of the P-doped Si nanoparticle film was 92 °C. The B-doped Si nanoparticle films were capable of producing light-induced heat.     

Synthesis and characterization of CaBi4Ti4O15 thin films annealed by microwave and conventional furnaces

CaBi₄Ti₄O₁₅ thin films were deposited by the polymeric precursor method and crystallized in a domestic microwave oven and conventional furnace. The films obtained for microwave energy are well-adhered, homogeneous and with good specularity when treated at 700 ^°C for 10 min. The microstructure and the structure of the films can be tuned by adjusting the crystallization conditions. When microwave oven is employed, the films presented bigger grains with mean grain size around 80 nm. For comparison, films were also prepared by the conventional furnace at 700 °C for 2 h.     

Investigation of O7+ swift heavy ion irradiation on molybdenum doped indium oxide thin films

Molybdenum (0.5 at%) doped indium oxide thin films deposited by spray pyrolysis technique were irradiated by 100 MeV O⁷⁺ ions with different fluences of 5×10¹¹, 1×10¹² and 1×10¹³ ions/cm². Intensity of (222) peak of the pristine film was decreased with increase in the ion fluence. Films irradiated with the maximum ion fluence of 1×10¹³ ions/cm² showed a fraction of amorphous nature. The surface microstructures on the surface of the film showed that increase in ion fluence decreases the grain size. Mobility of the pristine molybdenum doped indium oxide films was decreased from ～122 to 48 cm²/V s with increasing ion fluence. Among the irradiated films the film irradiated with the ion fluence of 5×10¹¹ ions/cm² showed relatively low resistivity of 6.7×10^?4 Ω cm with the mobility of 75 cm²/V s. The average transmittance of the as-deposited IMO film is decreased from 89% to 81% due to irradiation with the fluence of 5×10¹¹ ions/cm².     

Structure,microstructure and optical properties of cerium oxide thin films prepared by electron beam evaporation assisted with ion beams

Cerium oxide thin films were prepared by combined electron beam evaporation and ion beam assisted deposition techniques (EBE–IBAD). Their crystallographic structures, microstructures, and optical properties were studied as a function of the substrate temperature (200 °C and 500 °C) and the dose of Ar⁺ or O₂⁺ ion assistance during growth. X-ray diffraction was used to estimate the crystallographic texture, grain size, microstrain and lattice constant. Sample microstructure was studied by scanning electron microscopy. Transmission UV–vis spectroscopy was employed to obtain optical information (band gap, density, and refractive index). All films showed a cubic CeO₂ structure with different preferential growth depending on the preparation conditions. The bombardment with Ar⁺ ions during film deposition proved to be very effective for changing the film structure, hindering columnar growth and producing smaller grain sizes and higher values of microstrain and lattice constant. Films grown at 200 °C and Ar⁺ ion assistance showed the highest density, the smallest grain size (～10 nm) and a high expansion of the lattice constant (up to ～1%). This expansion is related to the presence of Ce³⁺ at the grain boundaries. Ion assistance during the growth leads to films with higher values of refractive index and lower values of band gap.     

High-capacity LiV3O8 thin-film cathode with a mixed amorphous–nanocrystalline microstructure prepared by RF magnetron sputtering

LiV₃O₈ thin films with a mixed amorphous–nanocrystalline microstructure were deposited on stainless steel substrates using radio-frequency (RF) magnetron sputtering for the first time. The films exhibited good performance as a cathode material for lithium ion batteries. Results indicate that the film electrodes had a smooth surface and consisted mainly of an amorphous structure containing nanocrystalline zones dispersed within it. Depending on its microstructure, the films delivered an initial discharge capacity as high as 382 mAh/g and exhibited good capacity retention, with discharge capacity of 301 mAh/g after 100 cycles representing a loss rate of 0.21% per cycle.     

Structural and electrical characterization of boron-containing diamond-like carbon films deposited by femtosecond pulsed laser ablation

The present study investigates the influence of the incorporation of boron in Diamond-Like Carbon (DLC) films deposited by femtosecond laser ablation, on the structure and electrical properties of the coatings within the temperature range 70–300 K. Doping with boron has been performed by ablating alternatively graphite and boron targets. The film structure and composition have been highlighted by coupling Atomic Force Microscopy (AFM), Scanning Electron Microscopy equipped with a field emission gun (SEM-FEG) and High Resolution Transmission Electron Microscopy (HRTEM). Boron dilution ranges between 2 and 8% and appears as nanometer size clusters embedded in the DLC matrix. Typical resistivity values are 100 W cm for pure a-C films, down to few W cm for a-C:B films at room temperature. The resistance decreases exponentially when the temperature increases in the range 70–300 K. The results are discussed considering the classical model of hopping conduction in thin films. Some coatings show temperature coefficients of resistance (TCR) as high as 3.85%. TCRs decrease when the doping increases. Such high values of TCR may have interests in the use of these films as thermometer elements in micro and nanodevices.     

Textured films of chromium phosphate synthesized by low-temperature vapor diffusion catalysis

The application of kinetically controlled vapor diffusion catalysis to the synthesis of films of chromium phosphate produces a novel, nanostructured film morphology. The resulting material consists of a thin, flat backplane (3 μm thick) with needles of CrPO₄·6H₂O projecting from one surface of the film. The reaction process occurs at low temperature (25 °C) and mild pH.     

Electron dynamics dependence on optimum dye loading for an efficient dye-sensitized solar cell

Increasing surface area and optimum dye loading are among the prerequisites for an efficient TiO₂-based dye-sensitized solar cell (DSC), since they improve light harvesting but, at the same time, affect, in a variant way the electron dynamics in the semiconductor. Into this context, in this work, the interdependence of these two effects was investigated. The thermal annealing conditions of nanocrystalline titania films were modified between 400 and 550 °C in order to vary the crystallinity and the aggregation/sintering degree of the semiconductor particles. The annealing effects on the structural and surface parameters of the films were determined and the electron dynamics inside the semiconductor were elucidated. The film properties were found to correlate with the photoelectric conversion efficiencies of the corresponding DSCs in terms of light harvesting efficiency, electron transport, recombination and trapping at surface states. Despite higher dye loading, a relatively low efficiency (5.3%) was attained at the temperature of 400 °C, due to insufficient neck growth and the presence of surface states that were not removed by annealing. On the contrary, the highest efficiency (6.4%) was attained at 550 °C, where high values of electron diffusion coefficients and enhanced electron lifetimes were observed despite a significantly lower dye loading. The above results point out the significance of properly controlling both light harvesting and electron dynamics in the photoelectrode for efficient dye sensitization of a large band gap semiconductor.     

Thermogravimetric and FTIR studies of chitosan blends

Results of spectrophotometric and thermogravimetric studies of chitosan (CH) blends with polyvinyl alcohol (PVAL), starch (S) and hydroxypropylcellulose (HPC) obtained by casting from solutions in the form of transparent films containing 0–1.0 weight fraction of CH were discussed. Blends containing S are homogeneous only in the case of low-weight fraction of S (to 0.3).On the basis of results of thermodegradation in dynamic and isothermal conditions, thermal stability of the tested systems was estimated. Thermogravimetric measurements in dynamic conditions were carried out in the temperature range of 100–450 °C at constant heating rate 15 °C/min. From thermogravimetry (TG) and DTG curves the activation energy and characteristic parameters of degradation of the tested blends were determined. The observed growth of activation energy and T_p—temperature of initial weight loss, T_max—temperature of maximal rate and C_e—degree of conversion at the end of the measurement (at temperature 450 °C) along with the increase of polymer fraction (HPC and S) in the CH blend provides an evidence of improved thermal stability of the systems tested.Investigations in isothermal conditions in air at temperature from 100 to 200 °C confirmed appreciable improvement of CH thermal stability in the blends being tested.Infrared spectroscopic analysis of the blends showed a distinct stabilization of the process of chain scission. In the band at 1080 cm⁻¹ associated with absorption in –C–O–C– group during degradation of the blends at temperature 200 °C much smaller decrease due to molecular scission were observed than in the case of pure CH.     

Fabrication and characterization of large-size electrolyte/anode bilayer structures for low-temperature solid oxide fuel cell stack based on gadolinia-doped ceria electrolyte

Preliminary progress is reported in this communication in building a planar anode-supported low-temperature solid oxide fuel cell (SOFC) stack based on gadolinia-doped ceria (GDC) electrolyte, i.e. fabrication and characterization of a Ø80 planar bilayer structure composed of GDC electrolyte film and Ni–GDC anode substrate. The anode substrates were prepared from mixtures of NiO, GDC, and carbon black by die-pressing. After pre-firing to remove the carbon black, the anode substrates were deposited with a GDC layer using a spray coating technique. The green bilayers of anode substrate and electrolyte film were then co-sintered at 1500 °C for 3 h. Through proper control of the sintering process, bilayer structures with excellent flatness were achieved after co-sintering. Scanning electron microscopy (SEM) observation indicated that the electrolyte film was about 22 μm in thickness, highly dense, crack-free, and well-bonded to the anode substrate. Small disks which were cut out from the Ø80 bilayer structure were electrochemically examined in a single button-cell mode incorporating a (LaSr)(CoFe)O₃–GDC composite cathode. With humidified hydrogen as the fuel and air as the oxidant, the cell demonstrated an open-circuit voltage of 0.884 V and a maximum power density of 562 mW/cm² at 600 °C. The results imply that high-quality anode-supported electrolyte/anode bilayer structures were successfully fabricated. Based on them, planar anode-supported SOFC stacks will be assembled in the future.     

Effect of Deposition Temperature on Structural and Optical Properties of Chemically Sprayed ZnS Thin Films

Zinc sulfide (ZnS) thin films have been successfully deposited via spray pyrolysis using an aqueous solution of thiourea and zinc acetate onto glass substrate. The effect of varying substrate temperature (150, 200,250 and 300 °C) on structure and optical properties is presented. The films have been characterized by X- ray diffraction (XRD), UV-Vis-NIR spectrometry, photoluminescence (PL) spectroscopy and field emission scanning electron microscopy (FESEM). All the deposited ZnS films exhibit a cubic structure, while crystallinity and morphology are found to depend on spray temperature. PL analysis indicates the presence of violet and green emissions arising from Zn and S vacancies. The value of bandgap of ZnS films is found to decrease slightly with increasing substrate temperature; varying in the range 3.52–3.25 eV, most probably associated with the formation of Zn(S,O) solid solution.     

Curie-point pyrolysis–gas chromatography–mass spectroscopic analysis of theabrownins from fermented Zijuan tea

Zijuan tea theabrownins (ZTTBs) was extracted from a type of fermented Zijuan tea and separated into fractions according to molecular weight. The extract was found to contain predominantly two fractions: <3.5 kDa and >100 kDa. These two fractions were analyzed for chemical composition, structural characteristics by Curie-point pyrolysis–gas chromatography–mass spectroscopy (CP-Py–GC/MS). The affects of pyrolysis temperature on pyrolytic products were also investigated. The fraction >100 kDa produced 50 GC/MS peaks during pyrolysis at 280 °C, 70 peaks at 386 °C, and 134 peaks at 485 °C. Fourteen of the products formed at 280 °C, 12 of those formed at 386 °C, and 21 of those formed at 485 °C were identified with match qualities of greater than 80%. The fraction <3.5 kDa gave 51 peaks during pyrolysis at 280 °C, 99 peaks at 386 °C, and 257 peaks at 485 °C. Six products formed at 280 °C, four products formed at 386 °C, and 61 products formed at 485 °C were identified with match qualities of greater than 80%. Pyrolysis temperatures of 485 °C and 386 °C were found suitable for the two fractions respectively. CP-Py–GC/MS revealed that, the fraction >100 kDa mainly consisted of phenolic pigments, esters, proteins, and polysaccharides, while the fraction <3.5 kDa contained no polysaccharide. CP-Py–GC/MS is an effective tool for the composition difference and structural characteristics of ZTTBs as well as other complex macromolecular plant pigments.     

Synthesis of L10 Fe–Pd films by electrodeposition and thermal annealing

Fe–Pd alloy films have been prepared by electrochemical deposition from an alkaline electrolyte containing Fe sulfate, Pd chloride and 5-sulfosalicylic acid onto polycrystalline titanium substrates. The as-deposited films were nanocrystalline and magnetically soft (coercivity ∼ 25 Oe). L1₀ Fe–Pd films with a (1 1 1) preferred orientation were obtained by post-deposition thermal annealing of films with composition about 37 at% Fe in an (Ar + 5% H₂) gas flow at 500 °C. Such films exhibit hard magnetic properties, with a coercivity up to 1880 Oe, and a slightly anisotropic magnetic response, with a larger in-plane remanence. Preliminary magnetic investigations support magnetization switching through pinning of domain walls.     

Detection of carrier information in heterojunctions of nanocrystalline/crystalline Si

Hall effect measurements on heterojunctions of nanocrystalline Si:H (nc-Si:H) film with crystalline Si wafer fabricated by plasma enhanced chemical vapor deposition technique were made as a function of temperature (20–300 K) and magnetic field (0–15 T). Magnetic field-dependent resistivity and Hall data were interpreted with the quantitative mobility spectrum analysis (QMSA) method, which successfully separated the two-dimensional electron gases (2DEGs) at the nc-Si:H/c-Si interface from 3D carriers appearing in the films and substrates. Mobilities and densities of 2DEGs for the specimens were measured. Detail analyses about influences of interface and epitaxial layer quality including doping, film thickness and mean size of nanocrystals on the mobilities and densities of 2DEGs at interfaces were carried out. The important role of the amorphous buffer layer within the junction was identified. Origin of high mobility observed in the prepared films was revealed. Forward and reverse current mechanisms as well as the dependence of breakdown voltages on temperature in the operated nc-Si:H/c-Si heterostructure were elucidated.