Plasma resonance in granular silver films deposited on rough surfaces of NaCl and KCl single crystals

Granular silver films deposited on rough NaCl and KCl single-crystal surfaces exhibit, besides the low-frequency plasma-resonance band induced by the light-wave field and the field generated by the grain dipoles, a second, high-frequency plasma-resonance band, which is excited only by the light-wave field at the frequency ω₀ of the natural electron vibrations in the grains. The dielectric constant due to interband transitions was calculated from the known plasma frequency and the dielectric constant of the medium surrounding thegrains, the plasma frequency ω_p of the granular films, and the measured frequency of the maximum of surface plasmon vibrations in solid films. The results obtained agree with the data quoted by other authors.     

Plasma resonance in granular gallium films deposited on rough NACl and KCl single-crystal surfaces

Granular gallium films deposited in high vacuum on the rough surfaces of NaCl and KCl single crystals maintained at 400°C consist of two layers, in which two resonance bands are excited simultaneously. In isolated grains of the upper layer, a band at the normal electron oscillation frequency ω₀ is excited. As a result of supercooling, the grains are in the liquid state. The gallium plasma frequency calculated from the measured ω₀ and dielectric constants of NaCl and KCl coincides with that obtained by other authors by metallooptic methods. In gallium deposited on room-temperature substrates, only one resonance band is excited, with the interband absorption band superposed on its low-frequency edge.     

Natural electron oscillations in granular aluminum films deposited on rough surfaces of NaCl and KCl single crystals

Granular aluminum films deposited on rough surfaces of NaCl and KCl single crystals form a two-layer coating. In the lower layer, a low-frequency band of plasma resonance is excited due to the joint action of a light-wave field and a field induced by granules-dipoles. In a small amount of granules of the upper layer isolated from each other, a high-frequency band with a frequency ω₀ of natural electron oscillations in the granules is excited. Using the measured frequencies ω₀ and the known dielectric constants of NaCl and KCl, a plasma frequency of aluminum is calculated that agrees well with the known plasma frequency of solid samples. Kharkov State University, 4 Svoboda Sq., Kharkov, 310077, Ukraine. Translated from Zhurnal Prikladnoid Spektroskopii, Vol. 66, No. 6, pp. 853–856, November–December, 1999.     

低温氮化硅薄膜的介电性能研究

研究了微波电子回旋共振等离子体化学汽相沉积低温氮化硅薄膜在5—10⁶Hz频率范围内的介电性能．由于低温氮化硅薄膜为具有分形结构的纳米非晶薄膜，致使氮化硅薄膜的介电谱、损耗谱在低频区和高频区具有两种不同的分布规律．在低频区介电谱具有ε′∝ω^n－1₁的关系，ｎ₁在0.82—0.88之间，是电子跳跃导电的结果；在高频区介电谱具有ε′∝ω^n-1₂的关系，n₂在0 关键词：     

Plasma resonance of granular indium films deposited on rough surfaces of NaCl and KCl single crystals

Granular films whose bands of plasma resonance are anisotropic are obtained by vacuum deposition of indium on rough surfaces of NaCl and KCl single crystals. On electron-microscopic pictures of samples, sections whose granules form chains with distances between them somewhat larger than the distances between the ganules in the chains are found. The maximum of the absorption band in polarized light along the chains is shifted into the low-frequency region of the spectrum in comparison to the abosorption band’s maximum in polarized light perpendicular to the chains. A second band of plasma resonance whose frequency is equal to the free-running frequency of electrons in a granule is found in the high-frequency region of the spectrum. Kharkov State University, 4, Svoboda Ave., 310077, Kharkov, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 5, pp. 799–803, September–October, 1998.     

Parametric Excitation of Plasma instabilities by two Monochromatic Pump waves

The dispersion characteristics of a plasma in a pump field ??(t) = ?? sub ω₀t + ??₁ sin ω₁t are considered. Firstly we assume, that the second wave is weak (|??₁| ? |??₀|) and the frequency ω₁ is near sω₀(ω₁ = sω₀ + Ω,Ω ? ω₀). We obtain the dispersion equation, describing the parametric coupling of the waves driven by the strong field ??₀ sin ω₀t under the resonance condition ω₀ ≈ ω_Le/P and derive the expressions for the growth rates (ω_Le is the electron LANGMUIR frequency; s, p are integers). In the second part it is shown, that a strong field ??₁ with a frequency ω₁ much larger than ω _Le(ω _Le ≈ pω₀) stabilizes the plasma; the growth rates are reduced and the frequency region of the parametric instability is contracted.     

Parametrische Anregung von elektrostatischen Oberflächenwellen in einer inhomogenen Plasmaschicht durch ein amplituden-moduliertes UHF-Pumpfeld

Parametric resonance phenomena are investigated in a plasma layer with thickness d and thin inhomogeneous boundary regions. The modulated UHF electric field is parallel to the plasma layer. We consider both strong and low modulation of the field amplitude and suppose, that the carrier frequency ω₀ of the pump wave is much larger than the Langmuir frequency ω_Le. We find the region for the modulation frequency ω, in which the parametric growing of the asymmetric and symmetric surface waves occurs. The maximum growth rates of these waves, the direction of their propagation and the threshold value of the modulation depth α of the UHF pump field are calculation.     

On the relation between the effective ferromagnetic resonance linewidth Δfeff and damping parameter αeff in ferromagnetic Fe-Co-Hf-N nanocomposite films

Ferromagnetic Fe-Co-Hf-N nanocomposite films were investigated concerning their microstructure-dependent frequency behaviour. To modify the composition, the films were deposited by reactive RF magnetron sputtering by using three different 6 in. targets with various Hf fractions. The films were post-annealed up to 600 °C in a static magnetic field to induce an in-plane uniaxial anisotropy and to obtain different crystal sizes. Depending on the annealing temperature, high-frequency losses were investigated by considering the full-width at half-maximum (FWHM) Δf_eff of the imaginary part of the frequency-dependent permeability which showed a resonance frequency f_FMR of 2.3 GHz for an in-plane uniaxial anisotropy field H_u of 4 mT. The FWHM in correlation with the damping parameter α_eff is discussed, e.g., in terms of two-magnon scattering. Damping occurs due to film inhomogeneity in magnetisation and uniaxial anisotropy caused by a magnetocrystalline anisotropy H_a and/or non-magnetic phases. This will result in homogenous or even inhomogeneous resonance line broadening if additional and resonance as well as precession frequencies of independent grains arise.     

[Russian Text Ignored]

The parametric excitation of longitudinal waves in an infinite homogeneous plasma by a pump field E (t) = E ₀(t) sin (ω₀t + φ(t)) is studied on the basis of the Vlasov equation, where the amplitude E ₀(t) and the phase φ(t) are slowly varying compared with ω₀ periodic functions. Firstly it is assumed that ω₀ is much larger than the electron plasma frequency ω_Le. In the second part the parametric instabilities are considered under the resonance condition ω₀ ≈ ω_Le. In both parts the threshold fields for the excitation of the longitudinal waves and their growth rates are calculated. As an example these values are analysed for both a sequence of pump impulses and a phase-moduated pump field. They are compared with the results received for a monochromatic pump field.     

Novel type of indium oxide thin films sputtering for opto-electronic applications

Transparent conductive oxide (TCO) thin films play a significant role in recent optical technologies. Displays of various types, photovoltaic systems, and opto-electronic devices use these films as transparent signal electrodes. They are used as heating surfaces and active control layers. Oxides of TCO materials such as: tin, indium, zinc, cadmium, titanium and the like, exhibit their properties. However, indium oxide and indium oxide doped with tin (ITO) coatings are the most used in this technology.In this work, we present conductive transparent indium oxide thin films which were prepared using a novel triode sputtering method. A pure In₂O₃ target of 2 in. in diameter was used in a laboratory triode sputtering system. This system provided plane plasma discharge at a relatively low pressure 0.5-5 mTorr of pure argon. The substrate temperature was varied during the experiments from room temperature up to 200 °C. The films were deposited on glass, silicon, and flexible polyimide substrates. The films were characterized for optical and electrical properties and compared with the indium oxide films deposited by magnetron sputtering.     

基片温度对SiNx薄膜结晶状态及机械性能的影响

利用微波电子回旋共振增强磁控反应溅射法在不同基片温度下制备无氢SiN_x薄膜.通过傅里叶变换红外光谱、透射电子显微镜、台阶仪、纳米硬度仪等表征技术,研究了基片温度对SiN_x薄膜结晶状态、晶粒尺寸、晶体取向等结晶性能以及薄膜的生长速率、硬度等机械性能的影响,并探讨了薄膜结晶性能与机械性能之间的关系.研究结果表明,在基片温度低于300℃时制备的SiN_x薄膜以非晶状态存在,硬度值仅为18GPa左右;基片温度 关键词： x')" href="#">SiN_x 磁控溅射 微观结构 硬度     

Microstructure and microwave permeability of FeCo thin films with Co underlayer

Microstructure, static magnetic properties and microwave permeability of sputtered FeCo films were examined. Fe₆₀Co₄₀ films (100 nm in thickness) deposited on glass substrates exhibited in-plane isotropy and a large coercivity of 161.1 Oe. When same thickness films were deposited on 2.5 nm Co underlayer, well-defined in-plane anisotropy was formed with an anisotropy field of 65 Oe. The sample had a static initial permeability of about 285, maximum imaginary permeability of 1255 and ferromagnetic resonance frequency of 2.71 GHz. Cross-sectional TEM image revealed that the Co underlayer had induced a columnar grain structure with grain diameter of 10 nm in the FeCo films. In comparison, FeCo films without Co underlayer showed larger grains of 70 nm in diameter with fewer distinct vertical grain boundaries. In addition, the Co underlayer changed the preferred orientation of the FeCo from (1 0 0) to (1 1 0). The improvement in soft magnetic properties and microwave behavior originates from the modification of the film microstructure, which can be well understood by the random anisotropy theory.     

An extreme change in structural and optical properties of indium oxynitride deposited by reactive gas-timing RF magnetron sputtering

The indium oxynitride (InON) films were achieved by reactive RF magnetron sputtering indium target which has the purity of 99.999% with a novel reactive gas-timing technique. The structural, optical and electrical properties in a series of polycrystalline InON films affected by gas-timing of reactive N₂ and O₂ gases introduced to the chamber were observed. The X-ray photoelectron spectroscopy revealed that the oxygen content in thin films that compounded to indium and nitrogen, which increased from 10% in indium nitride (InN) to 66% in indium oxide (In₂O₃) films. The X-ray diffraction peaks show that the phase of deposited films changes from InN to InON and to In₂O₃ with an increasing oxygen timing. The hexagonal structure of InN films with predominant (0 0 2) and (0 0 4) orientation was observed when pure nitrogen is only used as sputtering gas, while InON and In₂O₃ seem to demonstrate body-center cubic polycrystalline structures depending on gas-timing. The surface morphologies investigated from atomic force microscope of deposited films with varying gas-timing of O₂:N₂ show indifferent. The numerical algorithm method was used to define the optical bandgap of films from transmittance results. The increasing oxygen gas-timing affects extremely to the change of crystallinity phase from InN to InON and to In₂O₃, the increase of optical bandgap from 1.4 to 3.4 eV and the rise of sheet resistance from 15 Ω/□ to insulator.     

Characterisation of porous doped ZnO thin films deposited by spray pyrolysis technique

Al or Sn doped ZnO films were deposited by spray pyrolysis using aqueous solutions. The films were deposited on either indium tin oxide coated or bare glass substrates. ZnCl₂, AlCl₃ and SnCl₂ were used as precursors. The effect of ZnCl₂ molar concentration (0.1-0.3 M) and doping percentage (2-4% AlCl₃ or SnCl₂) have been investigated. The main goal of this work being to grow porous ZnO thin films, small temperature substrates (200-300 °C) have been used during the spray pyrolysis deposition. It is shown that, if the X-ray diffraction patterns correspond to ZnO, the films deposited onto bare glass substrate are only partly crystallized while those deposited onto ITO coated glass substrate exhibit better crystallization. The homogeneity of the films decreases when the molar concentration of the precursor increases, while the grain size and the porosity decrease when the Al doping increases. The optical study shows that band tails are present in the absorption spectrum of the films deposited onto bare glass substrate, which is typical of disordered materials. Even after annealing 4 h at 400 °C, the longitudinal resistivity of the films is quite high. This result is attributed to the grain boundary effect and the porosity of the films. Effectively, the presence of an important reflection in the IR region in samples annealed testifies of a high free-carriers density in the ZnO crystallites. Finally it is shown that when deposited in the same electrochemical conditions, the transmission of a polymer film onto the rough sprayed ZnO is smaller than that onto smooth sputtered ZnO.     

Preparation and characterization of electrodeposited SnS thin films

Tin sulfide (SnS) thin films have been deposited by electrodeposition using potentiostaic method on indium doped tin oxide (ITO) coated glass substrates from aqueous solution containing SnCl₂·2H₂O and Na₂S₂O₃ at various potentials. Good quality thin films were obtained at a cathodic potential −1000 mV versus saturated calomel electrode (SCE). The deposited films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and Fourier transform infrared (FTIR). X-ray diffraction analysis shows that the crystal structure of SnS thin films is orthorhombic with preferential orientation along 〈0 2 1〉 plane. Microstructural parameters such as crystallite size, micro strain, and dislocation density are calculated and found to depend upon cathodic potentials. SEM studies reveal that the SnS films exhibited uniformly distributed grains over the entire surface of the substrate. The optical transmittance studies showed that the direct band gap of SnS is 1.1 eV. FTIR was used to further characterize the SnS films obtained at various potentials.     

Effect of the Bloch-Siegert shift on the frequency responses of Rabi oscillations in the case of nutation resonance

The dynamics of a two-level spin system dressed by bichromatic radiation is studied under the conditions of double resonance when the frequency of one (microwave) field is equal to the Larmor frequency of the spin system and the frequency of the other (radio-frequency) field ω_rf is close to the Rabi frequency ω₁ in a microwave field. It is shown theoretically that Rabi oscillations between dressed-spin states with the frequency ? are accompanied by higher-frequency oscillations at frequencies nω_rf and nω_rf ± ?, where n = 1, 2,.... The most intense among these are the signals corresponding to n = 1. The counter-rotating (antiresonance) components of the RF field give rise to a shift of the dressed-state energy, i.e., to a frequency shift similar to the Bloch-Siegert shift. In particular, this shift is manifested as the dependence of the Rabi-oscillation frequency ? on the sign of the detuning ω₁ ? ω_rf from resonance. In the case of double resonance, the oscillation amplitude is asymmetric; i.e., the amplitude at the sum frequency ω_rf + ? increases, while the amplitude at the difference frequency ω_rf ? ? decreases. The predicted effects are confirmed by observations of the nutation signals of the electron paramagnetic resonance (EPR) of E′₁ centers in quartz and should be taken into account to realize qubits with a low Rabi frequency in solids.     

Characteristics of Ni films deposited on SiO2/Si(1 0 0) and MgO(0 0 1) by direct current magnetron sputtering system with the oblique target

280 nm-thick Ni films were deposited on SiO₂/Si(1 0 0) and MgO(0 0 1) substrates at 300 K, 513 K and 663 K by a direct current magnetron sputtering system with the oblique target. The films deposited at 300 K mainly have a [1 1 0] crystalline orientation in the film growth direction. The [1 1 0]-orientation weakens and the [1 1 1]- and [1 0 0]-orientations enhance with increasing deposition temperature. The lattice constant of the Ni films is smaller than that of the Ni bulk, except for the film grown on MgO(0 0 1) at 663 K. Furthermore, as the deposition temperature increases, the lattice constant of the films grown on the SiO₂/Si(1 0 0) decreases whereas that of the films grown on the MgO(0 0 1) increases. The films deposited at 300 K and 513 K grow with columnar grains perpendicular to the substrate. For the films deposited at 663 K, however, the columnar grain structure is destroyed, i.e., an about 50 nm-thick layer consisting of granular grains is formed at the interface between the film and the substrate and then large grains grow on the layer. The Ni films deposited at 300 K consist of thin columnar grains and have many voids at the grain boundaries. The grains become thick and the voids decrease with increasing deposition temperature. The resistivity of the film decreases and the saturation magnetization increases with increasing deposition temperature.     

Synthesis of nano-crystalline zirconium aluminium oxynitride (ZrAlON) composite films by dense plasma Focus device

Zirconium aluminium oxynitride multiphase composite film is deposited on zirconium substrate using energetic nitrogen ions delivered from dense plasma Focus device. X-ray diffractometer (XRD) results show that five Focus shots are sufficient to initiate the nucleation of ZrN and Al₂O₃ whereas 10 Focus shots are sufficient to initiate the nucleation of AlN. XRD results reveal that crystal growth of nitrides/oxides increases by increasing Focus shots (up to 30 Focus shots) and resputtering of the previously deposited film is taken place by further increase in Focus shots (40 Focus shots). Scanning electron microscopic (SEM) results indicate the uniform distribution of spherical grains (∼35 nm). A smoother surface is observed for 20 Focus shots at 0° angular position. SEM results also show a net-type microstructure (thread like features) of the sample treated for 30 Focus shots whereas rough surface morphology is observed for 40 Focus shots. Energy dispersive spectroscopic profiles show the distribution of different elements present in the deposited composite films. A typical microhardness value of the deposited composite films is 5255 ± 10 MPa for 10 grams imposed load which is 3.3 times than the microhardness values of unexposed sample. The microhardness values of the exposed samples increases with increasing Focus shots (up to 30 Focus shots) and decreases for 40 Focus shots treatment due to resputtering of the previously deposited composite film. The microhardness values of the composite films decreases by increasing the sample's angular position.     

激发频率对高氢稀释下纳米晶硅薄膜生长特性的影响

利用等离子体增强化学气相沉积技术,在高氢稀释条件下,研究不同激发频率对纳米晶硅薄膜生长特性的影响.剖面透射电子显微镜(TEM)分析结果显示,不同激发频率下制备的纳米晶硅薄膜晶化区均呈锥状结构生长,但13.56 MHz激发频率下制备的纳米晶硅薄膜最初生长阶段存在非晶态孵化层,即纳米晶硅薄膜的形成经历了由非晶态孵化层到晶态结构层的转变.而高激发频率(40.68 MHz)下硅纳米晶则能直接在非晶态衬底上生长形成.Raman谱和红外吸收谱测量结果表明高激发频率(40.68 MHz)下制备的纳米晶硅薄膜不但具有较高     

Double resonance in the system of coupled Josephson junctions

The effect of LC shunting on the phase dynamics of coupled Josephson junctions has been examined. It has been shown that additional (rc) branches appear in the current-voltage characteristics of the junctions when the Josephson frequency ω_J is equal to the natural frequency of the formed resonance circuit ω_rc. The effect of the parameters of the system on its characteristics has been studied. Double resonance has been revealed in the system at ω_J = ω_rc = 2ω_LPW, where ω_LPW is the frequency of a longitudinal plasma wave appearing under the parametric-resonance conditions. In this case, electric charge appears in superconducting layers in the interval of the bias current corresponding to the rc branch. The charge magnitude is determined by the accuracy with which the double resonance condition is satisfied. The possibility of the experimental implementation of the effects under study has been estimated.