Application of high energy ion channeling to GaAs(110), Au-GaAs(110) and Pd-GaAs(110)

The first application of high energy ion channeling to the atomically clean GaAs(110) surface and metal-GaAs interfaces is reported. Questions of sample preparation, background correction and computer simulation are addressed. It is found that the Ga and As atoms at the clean surface are laterally displaced ? 0.1 Å from the ideal bulk-like sites. The implications of this result to current LEED models are discussed. Au overlayers, deposited at room temperature, do not seem to produce lateral displacements of the substrate for coverages below ≈ 5 monolayer (ML). However, ≈ 0.9 ML of the substrate are expanded or contracted upon Au deposition; this process is completed at a coverage of 0.5 ML. Neither an indication of any order in the Au film is found, nor seems a significant (? 5%) fraction of Au atoms to occupy substitutional sites. In contrast, room-temperature deposition of Pd disorders the substrate substantially, without threshold coverage, even at very small film thicknesses.     

The ferromagnetic monolayer Fe(110) on W(110)

Ferromagnetic order in the pseudomorphic monolayer Fe(110) on W(110) was analyzed experimentally using Conversion Electron Mössbauer Spectroscopy (CEMS) and Torsion Oscillation Magnetometry (TOM). The monolayer is thermodynamically stable, crystallizes to large monolayer patches at elevated temperatures and therefore forms an excellent approximation to the ideal monolayer structure. It is ferromagnetic below a Curie-temperatureT _c,mono, which is given by (282±3) K for the Ag-coated layer, (290±10) K for coating by Cu, Ag or Au and ≈210 K for the free monolayer. For the Ag-coated monolayer, ground state hyperfine fieldB _hf (0)=(11.9±0.3) T and magnetic moment per atom μ=2.53 μ_B could be determined, in fair agreement with theoretical predictions. Unusual properties of the phase transition are detected by the combination of both experimental techniques. Strong magnetic anisotropies, which are essential for ferromagnetic order, are determined by CEMS.     

Optical detection of surface states in GaAs(110) and GaP(110)

We present results on the optical detection of surface states in GaAs(110)and GaP(110)by the method of the fractional change of external reflectivity. Optical transitions are observed at ～3.1 eV m GaAs(110) and ～3.4 eV in GaP. A comparison with existing theories suggests a rotational relaxation model for the surface, with partial relaxation for GaAs(110) and full relaxation for GaP(110).     

Chemisorption of CO on Cu(100), Ag(110) and Au(110)

The adsorption of CO on Cu, Ag and Au is studied using core and valence photoemission, X-ray absorption and autoionization of core excited states. The purpose is to investigate the nature of the adsorption bond starting out from the well-established chemisorption system CO/Cu(100)-c(2 × 2), and from the results we suggest that CO forms chemisorbed phases also on Ag(110) and Au(110). The photoemission spectra show strong shake-up satellites both for the valence levels and the core levels. The separation to the satellite appearing closest to the main line is observed to follow the position of the substrate d-band relative to the Fermi level. The CO adsorption strength for the noble metals is deduced to decrease in the order Cu-Au-Ag. This is based on the widths of the XA resonances, which are related to the adsorbate-substrate interaction strength of the core excited states, and the relative shake-up intensities, which are expected to increase with a decreasing adsorption strength in the ground state. The same trends regarding the shake-up intensities are observed both for the valence and core levels.     

Quantum spin Hall insulators in chemically functionalized As(110) and Sb(110) films

We propose a new type of quantum spin Hall(QSH) insulator in chemically functionalized As(110) and Sb(110) film.According to first-principles calculations, we find that metallic As(110) and Sb(110) films become QSH insulators after being chemically functionalized by hydrogen(H) or halogen(Cl and Br) atoms. The energy gaps of the functionalized films range from 0.121 eV to 0.304 eV, which are sufficiently large for practical applications at room temperature. The energy gaps originate from the spin–orbit coupling(SOC). The energy gap increases linearly with the increase of the SOC strength λ/λ_0. The Z_2 invariant and the penetration depth of the edge states are also calculated and studied for the functionalized films.     

Monte Carlo simulations of hydrogen adsorption on the W(110) and Mo(110) surfaces

Kinetics of low-temperature hydrogen and deuterium adsorption on W(110) and Mo(110) surfaces have been studied by the real-time Monte Carlo simulations. Recently reported qualitative dependence of the adsorption characteristics on variation of the H₂ flux is described in terms of the dynamical equilibrium between incident and desorption fluxes and improved conditions for accommodation for the hydrogen molecules at high incident fluxes. The role of the intrinsic precursor state in hydrogen dissociative adsorption is analyzed.Received: 16 February 2004, Published online: 28 May 2004PACS: 82.65. + r Surface and interface chemistry; heterogeneous catalysis at surfaces - 02.50.Ng Distribution theory and Monte Carlo studies - 82.20.Wt Computational modeling; simulation     

CO dynamics induced by tunneling electrons: differences on Cu(110) and Ag(110)

The electronic current originating in a scanning tunneling microscope (STM) can be used to induce motion and desorption of adsorbates on surfaces. The manipulation of CO molecules on noble metal surfaces is an academic case that has received little theoretical attention. Here, we do thorough density functional theory calculations that explore the chemisorption of CO on Cu(110) and Ag(110) surface and its vibrational properties. The STM induced dynamics are explored after excitation of the highest lying mode, the C–O stretch. In order to give a complete account of this dynamics, the lifetime of the different CO modes is evaluated (by only including the mode decay into electronic excitations of the host surface) as well as the intermode coupling. Hence, after excitation of the stretch mode, the lower-energy modes are populated via intermode coupling and depopulated by electron-hole excitations. This study reveals the intrinsic features of the STM induced motion of CO on Cu(110) and Ag(110).     

Periodic lattice distortions in epitaxial films of Fe(110) on W(110)

The epitaxial growth of Fe(110) on W(110) at 500 K is analyzed using LEED and AES. Frank-van der Merwe growth is established by AES. According to LEED, pseudomorphism occurs up to θ = 1.64, where every W atom of two topmost W layers is just covered by exactly one Fe atom. For 2?θ?9, characteristic reflection-multiplets are observed, symmetric about the basic Fe(110) reflections, which are interpreted in terms of periodic lattice distortions. The latter are caused by interaction with the misfitting W substrate.     

Oxidation of Pt(110)

Using scanning tunneling microscopy and temperature programmed desorption we investigate the Pt(110) surface under strongly oxidizing conditions involving either high-pressure O2 or atomic oxygen exposure. At low temperatures, only disordered Pt oxide structures are observed. After annealing ordered surface oxide islands are observed to coexist with a highly stable reconstructed (12x2)-O chemisorption structure. From density functional theory calculations a model for the surface oxide phase is revealed. The phase is found to be metastable, and its presence is explained in terms of stabilizing defects in the chemisorption layer and reduced Pt mobility.     

Quasiparticle corrections to the electronic properties of anion vacancies at GaAs(110) and InP(110)

We propose a new method for calculating optical defect levels and thermodynamic charge-transition levels of point defects in semiconductors, which includes quasiparticle corrections to the Kohn-Sham eigenvalues of density-functional theory. Its applicability is demonstrated for anion vacancies at the (110) surfaces of III-V semiconductors. We find the (+/0) charge-transition level to be 0.49 eV above the surface valence-band maximum for GaAs(110) and 0.82 eV for InP(110). The results show a clear improvement over the local-density approximation and agree closely with an experimental analysis.     

Origin of spin-orbit splitting for monolayers of au and ag on w(110) and mo(110)

Spin-orbit coupling can give rise to spin-split electronic states without a ferromagnet or an external magnetic field. We create large spin-orbit splittings in a Au and Ag monolayer on W(110) and show that the size of the splitting does not depend on the atomic number of the Au or Ag overlayer but of the W substrate. Spin- and angle-resolved photoemission and Fermi-surface scans reveal that the overlayer states acquire spin polarization through spin-dependent overlayer-substrate hybridization.     

Photoelectron diffraction effects in XPS angular distributions from GaAs(110) and Ge(110) single crystals

Angular distribution measurements of XPS intensities have been made for various spectral lines from GaAs(110) and Ge(110) single-crystal surfaces. Observed angular distribution curves (ADC's) showed steep intensity variations and sharp peaks due to X-ray photoelectron diffraction (XPED) phenomena. The effects of the type of transition process (photoelectron or Auger), electron kinetic energy and crystal structure on the XPED patterns were examined. Considerably different ADC patterns were observed for high-energy photoelectrons and Auger electrons and for low-energy photoelectrons. ADC's for Ga 3d, As 3d and Ge 3d showed almost the same patterns for scans of the type [110] → [100] → [1$\text{1}$0], but they showed substantially different patterns for [110] → [11$\text{1}$] → [00$\text{1}$] scans. These features correspond well with the structural characteristics of GaAs and Ge crystals. A discussion of the applicability of XPS angular distribution measurements to the geometric analysis of crystal surfaces is presented.