GaN(0001)表面的电子结构研究

报道了纤锌矿WZ(wurtzite)GaN(0001)表面的电子结构研究.采用全势线性缀加平面波方法计算得到了GaN分波态密度,与以前实验结果一致.讨论了Ga3d对GaN电子结构的影响.利用同步辐射角分辨光电子能谱技术研究了价带电子结构.通过改变光子能量的垂直出射谱勾画沿ΓA方向的体能带结构,与计算得到的能带结构符合得较好.根据沿ΓK和ΓM方向的非垂直出射谱,确定了两个表面态的能带色散 关键词： GaN 角分辨光电发射 全势线性缀加平面波 电子结构     

Surface electronic structure of Gd(0001) films on W(110)

Received: 1 September 1996/Accepted: 6 January 1997     

GaN(0001)表面电子结构和光学性质的第一性原理研究

采用基于第一性原理的密度泛函理论平面波超软赝势方法计算了(2×2)GaN(0001)清洁表面的能带结构、态密度、表面能、功函数和光学性质.发现弛豫后GaN(0001)表面的能带结构发生较大变化,表面呈现金属导电特性,导带底附近存在明显的表面态,在偶极矩的作用下表面电荷发生转移,Ga端面为正极性表面;计算获得了GaN(0001)表面的表面能和功函数分别为2.1J.m^-2和4.2eV;比较分析了GaN(0001)表面和体相GaN的光学性质,发现两者存在较大差异.     

Atomic and electronic structure of the corundum (0001) surface: comparison with surface spectroscopies

The electronic structure and geometry of the Al-terminated corundum (0001) surface were studied using a slab model within the ab-initio Hartree-Fock technique. The distance between the top Al plane and the next O basal plane is found to be considerably reduced on relaxation (by 0.57 Å, i.e. by 68% of the corresponding interlayer distance in the bulk). An interpretation of experimental photoelectron spectra (UPS He I) and metastable impact electron spectra (MIES) is given using the calculated total density of states of the slab and the projections to the atoms, atomic orbitals, and He 1s floating atomic orbital at different positions above the surface. Calculated projected densities of states exhibit a strong dependence on the relaxation of surface atoms. The good agreement of simulated and experimental UPS and MIES spectra supports the correctness of calculated surface relaxation.     

Geometric structure and electronic states of copper films on a ruthenium (0001) surface

Auger electron spectroscopy (AES), combined with thermal desorption mass spectroscopy (TDS), work function (Δφ) measurements and energy-dependent angular resolved UV photoemission using synchrotron radiation were used to investigate the geometric and electronic properties of submonolayer and monolayer copper films grown by vapor deposition on a clean Ru(0001) substrate. A pronounced influence of the deposition temperature on the morphology of the Cu films was established in that lower temperatures favor an island growth mechanism (Stranski-Krastanov or Volmer-Weber type), whereas higher deposition temperatures lead to a more uniform spreading and a layer-by-layer growth (Frank-van der Merwe type). For Cu films grown under the latter conditions angular resolved photoemission reveals the existence of two-dimensional Cu bands even before the monolayer has reached completion; the experimentally determined band dispersions agree quite well with recent theoretical calculations.     

Atomic structure of the scandium (0001) surface

The atomic structure of the scandium (0001) surface has been determined through a lowenergy-electron-diffraction analysis. Intensity profiles calculated on the basis of different structural models corresponding to different terminations of the bulk structure were compared to the experimental data. The comparison showed that the surface of scandium terminated in hep stacking and that the outermost layer spacing is 2.59 ± 0.02 Å corresponding to a ～2% contraction with respect to the bulk spacing (2.64 Å).     

Band structure of Au layers on the Ru(0001) and graphene/Ru(0001) surfaces

The electronic structures of Au monolayers on the Ru(0001) and graphene-coated Ru(0001) surfaces have been calculated by DFT method using the supercell (repeated-slab) approach. The local densities of states (LDOS) and band structures of the monolayer and bilayer Au films adsorbed on the graphene/Ru(0001) and those of free hexagonal Au layers are found to be very similar. This result indicates that the monolayer graphene almost completely screens the Au layers from the Ru(0001) substrate surface, so that electronic properties of Au films adsorbed on graphene are determined predominantly by the electronic structure of the Au adlayers, essentially independent on the electronic structure of the substrate surface.     

Surface and interface electronic properties of AlGaN(0001) epitaxial layers

AlGaN layers with Al content varying over the whole range of compositions were grown by molecular beam epitaxy (MBE) on n-6H-SiC substrates. The band gap energy is obtained from the vanishing of Fabry–Pérot oscillations in a fit to optical reflection spectra near the band gap absorption edge. The surface potential was determined by in-situ X-ray photoemission spectroscopy (XPS) and is found to increase as a function of the Al content from (0.5±0.1) eV to (1.3±0.1) eV, from GaN to AlN. A Si₃N₄ thin passivation layer was formed in-situ onto a 2DEG AlGaN/GaN structure. The mechanism underlying the passivation of high electron mobility transistor (HEMT) structures is suggested to be based on the formation of interface states, which keep the Fermi level fixed at a position close to that of the free AlGaN surface. PACS 73.20.-r; 73.40.-c; 73.40.Kp     

Comparative study of the nature of chemical bonding of corrugated graphene on Ru(0001) and Rh(111) by electronic structure calculations

Recently, atomic resolved scanning tunneling microscopy investigations revealed that, depending on the substrate (Ni(111), Ru(0001), Ir(111), Pt(111), Rh(111)), graphene overlayer might present regular corrugation patterns, with periodically repeated units of a few nanometers. Variations of the interactions at the interface and the modulation of the local electronic properties are associated with the exact atomic arrangement of the carbon pairs with respect to the metal atoms of the substrate. Better understanding of the atomic structure and of the chemical bonding between graphene and the underlying transition metal is motivated by the fundamental scientific relevance of such systems, but it is also crucial in the perspective of possible applications. With the present work, we propose model systems for the two interfaces showing the most pronounced corrugation patterns, i.e. graphene/Ru(0001) and graphene/Rh(111). Our goal is to understand the nature of the interactions by means of electronic structure calculations based on Density Functional Theory. Our simulations qualitatively reproduce very well experimental results such as the STM topographies and the electrostatic potential maps, and quantitatively provide the closest agreement that has been published so far. The detailed analysis of the electronic structure at the interface highlights similarities and differences by changing the supporting transition metal. Our results point to a fundamental role of the hybridization between the π orbitals of graphene with the d band of the metal in determining the specific corrugation of the adsorbed monolayer. It is shown that differences in the response of the graphene electronic structure to the interaction with the metal can hinder the hybridization and lead to substantially different structures.     

Surface states of Sc(0001) and Ti(0001)

Calculated electronic properties are compared for 11-layer Sc(0001) and Ti(0001) films. Prominent surface states are found whose locations conform to expectations based on the respective bulk band structures establishing a roughly rigid band picture of the surface bands. Surface core-level shift and work function results are qualitatively explained.     

Influences of Al doping on the electronic structure of Mg(0001) and dissociation properties of H2

By using the density functional theory method, we systematically study the effects of the doping of an Al atom on the electronic structures of the Mg(0001) surface and on the dissociation behaviors of H₂ molecules. We find that for the Al-doped surfaces, the surface relaxation around the doping layer changes from expansion of a clean Mg(0001) surface to contraction, due to the redistribution of electrons. After doping, the work function is enlarged, and the electronic states around the Fermi energy have a major distribution around the doping layer. For the dissociation of H₂ molecules, we find that the energy barrier is enlarged for the doped surfaces. In particular, when the Al atom is doped at the first layer, the energy barrier is enlarged by 0.30 eV. For different doping lengths, however, the dissociation energy barrier decreases slowly to the value on a clean Mg(0001) surface when the doping layer is far away from the top surface. Our results well describe the electronic changes after Al doping for the Mg(0001) surface, and reveal some possible mechanisms for improving the resistance to corrosion of the Mg(0001) surface by doping of Al atoms.