Magnetization and photomagnetic effects in diluted magnetic microcrystalline Cd1-xMnxTe

We have investigated the magnetic and photomagnetic properties of microcrystalline Cd_1-xMn_xTe prepared by rf sputtering. Magnetization measurements were carried out using an rf SQUID magnetometer in the temperature range of 1.8 to 300 K at various magnetic fields up to 5.5 T. For temperatures above 40 K, the sample showed Curie-Weiss behaviour with a Curie temperature indicating predominantly antiferromagnetic interactions. A spin-glass phase transition was also observed. Photomagnetization measurements were performed using a fibre-optic system. The light was shone onto the sample utilizing an optical fibre and the subsequent change in the magnetization was sensed by the SQUID. Photo-induced magnetization was observed when the sample was illuminated by unpolarized light. Our results enable qualitative and quantitative conclusions to be drawn on the magnetic behaviour and the interplay between optical and magnetic properties of the diluted magnetic microcrystalline semiconductors.PACS: 68.55.Gi; 75.50.Pp.     

Van Vleck paramagnetism in the diluted magnetic semiconductor Cd1-xFexSe; A photoluminescence study

We present a photoluminescence study of Cd_1-xFe_xSe, a new diluted magnetic semiconductor (DMS). The luminescence spectrum was recorded as a function of temperature and applied magnetic field, revealing behaviour which was significantly different from that observed in manganese based DMS. We conclude that Cd_1-xFe_xSe exhibits Van Vleck paramagnetism instead of the more usual Larmor paramagnetism.     

Theory of diluted magnetic semiconductor ferromagnetism

We present a theory of carrier-induced ferromagnetism in diluted magnetic semiconductors ( III1-xMnxV) which allows for arbitrary itinerant-carrier spin polarization and dynamic correlations. Both ingredients are essential in identifying the system's elementary excitations and describing their properties. We find a branch of collective modes, in addition to the spin waves and Stoner continuum which occur in metallic ferromagnets, and predict that the low-temperature spin stiffness is independent of the strength of the exchange coupling between magnetic ions and itinerant carriers. We discuss the temperature dependence of the magnetization and the heat capacity.     

Photoluminescence of semimagnetic semiconductor Hg1-xMnxTe

Photoluminescence (PL) of Hg_1−xMn_xTe for 0.12 ⩽ x ⩽ 0.13 corresponding E₀ ≃ 0.27 eV was measured at 4.2 K vs magnetic field up to 8.3 T. The spectral dependence of PL shows two maxima connected with band-band and band-acceptor recombination processes. Magnetic fields cause the shift of both maxima to lower energies. The intensity of the PL increases over 50 times for band-acceptor transitions as function of magnetic field, reaches a maximum at 6T than decreases. The results are explained on the base of band structure and acceptor behaviour in magnetic field characteristic for semimagnetic semiconductors.     

Excitonic effects in diluted magnetic semiconductor nanostructures

Excitonic properties and the dynamics are reported in quantum dots (QDs) and quantum wells (QW) of diluted magnetic semiconductors. Transient spectroscopies of photoluminescence and nonlinear-optical absorption and emission have been made on these quantum nanostructures. The Cd_1−x Mn_xSe QDs show the excitonic magnetic polaron effect with an increased binding energy. The quantum wells of the Cd_1−x Mn_xTe/ZnTe system display fast energy and dephasing relaxations of the free and localized excitons as well as the tunneling process of carriers and excitons in the QWs depending on the barrier widths. The observed dynamics and the enhanced excitonic effects are the inherent properties of the diluted magnetic nanostructures. Fiz. Tverd. Tela (St. Petersburg) 40, 846–848 (May 1998) Published in English in the original Russian journal. Reproduced here with stylistic changes by the Translation Editor.     

Amplification of the induced ferromagnetism in diluted magnetic semiconductor

Magnetic properties of the planar structure consisting of a ferromagnetic metal and the diluted magnetic semiconductor are considered (by the example of the structure Fe/Ga(Mn)As, experimentally studied in [F. Maccherozzi, M. Sperl, G. Panaccione, J. Mina'r, S. Polesya, H. Ebert, U. Wurstbauer, M. Hochstrasser, G. Rossi, G. Woltersdorf, W. Wegscheider, C.H. Back, Phys. Rev. Lett. 101 (2008) 267201]). In the framework of the mean field theory, we demonstrate the presence of the significant amplification of the ferromagnetism, induced by the ferromagnetic metal in the near-interface semiconductor area, due to the indirect interaction of magnetic impurities. This results in the substantial expansion of the temperature range where the magnetization in the boundary semiconductor region exists, that might be important for possible practical applications.     

Observation of strong-coupling effects in a diluted magnetic semiconductor Ga1-xFexN

The giant Zeeman splitting of free excitons is measured in Ga(1-x)Fe(x)N. Magneto-optical and magnetization data imply the ferromagnetic sign and a reduced magnitude of the effective p-d exchange energy governing the interaction between Fe(3+) ions and holes in GaN, N_{0}beta(app)=+0.5+/-0.2 eV. This finding corroborates the recent suggestion that the strong p-d hybridization specific to nitrides and oxides leads to significant renormalization of the valence band exchange splitting.     

ZnCoO稀磁半导体的室温磁性

采用固相反应法，将ZnO和Co₂O₃粉末按不同的成分配比混合，制备了稀磁半导体Zn_1-xCo_xO (x=0.02,0.06,0.10)材料.并使用H₂气氛退火技术对样品进行了处理，得到了具有室温铁磁性的掺Co氧化锌稀磁半导体.利用全自动X射线衍射仪、X射线光电子能谱仪、高分辨透射电子显微镜和超导量子干涉器件磁强计对样品的结构、晶粒的尺寸、微观形貌以及磁性等进行了测量和标度. 关键词： 稀磁半导体 氧化锌 掺杂 固相反应法     

新型稀磁半导体Mn掺杂LiZnAs的第一性原理研究

采用基于密度泛函理论的第一性原理平面波超软赝势方法, 对纯LiZnAs, Mn掺杂的LiZnAs, Li过量和不足下Mn掺杂的LiZnAs体系进行几何结构优化, 计算并对比分析了体系的电子结构、半金属性、光学性质及形成能.结果表明新型稀磁半导体Li (Zn_0.875Mn_0.125) As, Li_1.1 (Zn_0.875Mn_0.125) As和Li_0.9 (Zn_0.875Mn_0.125) As均表现为100%自旋注入, 材料均具有半金属性, Li过量和不足下体系的半金属性明显增强. Li过量可以提高体系的居里温度, 改善材料的导电性, 使体系的形成能降低. 说明LiZnAs半导体可以实现自旋和电荷注入机理的分离, 磁性和电性可以分别通过Mn的掺入和Li的含量进行调控. 进一步对比分析光学性质发现, 低能区的介电函数虚部和复折射率函数明显受到Li的化学计量数的影响. 关键词： Mn掺杂LiZnAs 电子结构 光学性质 第一性原理     

Ⅱ—Ⅵ族稀磁半导体Cd1—xMnxTe／Cd1—yMnyTe超晶格的光调制反 …

本文报道用分子束外延技术生长的Ｃｄ１－ｘＭｎｘＴｅ／Ｃｄ１－ｙＭｎｙＴｅ超晶格样品在８０Ｋ下的光调制反射谱实验结果，观测到１１Ｈ，２２Ｈ，３３Ｈ和１１Ｌ等激子跃迁结构。计及晶格失配导致的应力效应，对子能级结构进行了理论计算。     

Phase diagram of diluted magnetic semiconductor quantum wells

The phase diagram of diluted magnetic semiconductor quantum wells is investigated. The interaction between the carriers in the hole gas can lead to first-order ferromagnetic transitions, which remain abrupt in applied fields. These transitions can be induced by magnetic fields or, in double-layer systems, by electric fields. We make a number of precise experimental predictions for observing these first-order phase transitions.     

Laser induced ultrafast demagnetization in diluted magnetic semiconductor nanostructures

We present a dynamical model that reproduces the observed time evolution of the magnetization in diluted magnetic semiconductor films after weak laser excitation. Based on a many-particle expansion of the exact p–d exchange interaction, our approach goes beyond the usual mean-field approximation. Numerical results demonstrate that the hole spin relaxation plays a crucial role for explaining the ultrafast demagnetization processes observed experimentally. The influence of the laser power on the magnetization dynamics is also investigated.     

Theoretical study of the magnetoresistance under electric field in III–V diluted magnetic semiconductor

In this paper we study the magnetoresistance and the coupling energy in heterostructures formed by two magnetic layers Ga_1−xMn_xAs separated by a nonmagnetic spacer GaAs under an electric field and develop a mean-field theory of carrier in diluted magnetic semiconductor. Our main result indicates that magnetoresistance can be dramatically suppressed by an external electric field.