Investigation of conductivity in the Sr(Fe1−xTix)Oy system by iron-57 Mössbauer spectroscopy

On the basis of our previous work electrical conductivity in the Sr(Fe_1–xTi_x)O_y system (0.0x0.9,y3) has been further studied by means of Mössbauer spectroscopy. When 0.0x0.6, the concentration of Fe³⁺ (II) doublet relates to the final firing temperature and electrical conductivity of the materials is sensitive to the concentration of Fe³⁺ (II). Atx=0.25, the curve of the resistivity versus Ti contentx shows a local minimum which is observed for the first time. The results indicate that the coexistence of Fe⁴⁺ and Fe³⁺ in the same lattice leads to high conductivity; the conductivity increases when the Fe⁴ concentration approaches to that of the Fe³⁺ one. When the temperature is at 260 K and 230 K, the presence of the intermediate state showing quadrupole splitting has an effect on the conductivity of the materials.     

Electrical and thermal conductivity of CePd3, YPd3, GdPd3 and some dilute alloys of CePd3 with Y and Gd

Resistivity and thermal conductivity of the intermediate valence compound CePd₃ between 1.3 and 300 K are compared with those of the nonmagnetic and magnetic reference compounds YPd₃ and GdPd₃ and of alloys of the type Ce₁–xRE _x Pd₃ with RE=Y, Gd and 0.01<x<0.5. The analysis reveals the existence of a maximum metallic resistivity of 300 cm for CePd₃. The intrinsic resistivity of CePd₃ rises proportional toT ² up to 100 K, with a coefficientB about 10⁷ times larger than e.g. in copper. We interpret this with indirect electron-electron scattering mediated through valence transitions.     

Electronic transport properties of amorphous NiTi alloys

Measurements of electrical resistivity, magnetoresistance and Hall effect on amorphous Ni_100–x Ti _x alloys withx=39, 43, 60, 65, 70, and 76 are presented. The resistivity at 4.2 K is in the range 210 cm to 325 cm. The Hall coefficient turns out to be negative for low Ti contents and positive for high Ti contents with values around –6×10^–11 m³/As and +7×10^–11 m³/As, respectively. At low temperatures, the temperature and magnetic field dependences of the quantities measured are analysed and discussed in terms of weak localisation and electron-electron interaction effects.     

Thermoelectric Properties of the TlBiS<Subscript>2</Subscript>-PbS Alloys

High efficiency of thermoelectric conversion can be achieved by using materials with a high Seebeck coefficient, high electrical conductivity, and low thermal conductivity. Mass-difference-scattering of the phonons is one of the most effective way for reducing the thermal conductivity in bulk thermoelectric materials. Investigations of transport phenomena in (TlBiS₂)_1-x (2PbS)_x alloys system have shown that in solid solutions of the (A³B⁵C ₂ ⁶ )_1-x (2A⁴B⁶)_x type at cation substitution according to scheme 2A⁴⁽⁺²⁾ A ³⁽⁺¹⁾ + B⁵⁽⁺³⁾ occurs a strong decrease of the lattice thermal conductivity. In the vicinity of x = 0. 50 the lattice part of thermal conductivity of (TlBiS₂)_1-x (2PbS)_x alloys decreases down to 0. 26 W/mK, i. e., it approaches the theoretical minimum. As a result, the thermoelectric figure of merit for these alloys ( 25%) exceeds the respective value for lead sulfide at room temperature.     

Electrical conductivity in single crystals of GaSe<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Te<Subscript>1 – <Emphasis Type="Italic">x</Emphasis></Subscript> solid solutions in strong electrical fields

This paper presents some results of studying the Poole–Frenkel effect with allowance for shielding in layered GaSe and GaTe single crystals and their solid solutions in strong electrical fields of up to 10⁵ V/cm at temperatures of 103–250 K. According to the relationship \(\left(\frac{\sigma}{\sigma(0)}\right)^{1/2}\) log\(\frac{\sigma}{\sigma(0)} = E\sqrt{\frac{\varepsilon}{4\pi n(0)kT}}\), there exists a linear dependence between \(\left(\frac{\sigma}{\sigma(0)}\right)^{1/2}\) log\(\frac{\sigma}{\sigma(0)}\) and the electrical field E (σ is the electrical conductivity in strong electrical fields, and σ(0) is the electrical conductivity in the ohmic region). The slopes of these lines have been determined at different temperatures (103–250 K) by estimating the concentration of current carriers n(0) = 3 × 10¹³–5 × 10¹⁵ cm^–3 in the ohmic region of the electrical conductivity of solid solutions of layered GaSe _x Te_1–x single crystals (x = 1.00, 0.95, 0.90, 0.80, 0.70, 0.30, 0.20, 0.10, 0).     

Electrical conductivity of (Ag2S)x-(GeS2)1-x glasses

We clearly demonstrate, on the basis of experimental measurements of the electrical conductivity of (Ag₂S) _x -(GeS₂)_1-x glasses, that the power-law behaviour of the polarization ac conductivity, _ac=A ^s , can be used. The exponents, in this case, should be considered as a function of temperature and frequency. Moreover, the parameters depends on details of the structure, i.e., the nature of disorder.     

Influence of the overall pressure on electrical conductivity of the amorphous semiconductor Ge15Te81S2As2

The experimental results obtained with the chalcogenide glass Ge₁₅Te₈₁S₂As₂ with imposed overall pressure up to 700 MPa are presented. The material exhibits the switching effect and the memory effect. It is shown that the overall pressure changes remarkably d.c. electrical conductivity of the amorphous semiconductor. It is assumed that the changes in conductivity are caused by changes in activation energy. The changes in activation energy within the range of considered pressures are, as follows from our measurements, E/p–10·95×10^–5 eV/MPa +p × 10·41 W 10^–7 eV/MPa². The assumption of the activation energy dependence on pressurep are confirmed also by measurements of dependence In vs. 1/T at various pressures.     

Gd3+-ESR in the intermediate valent cerium compounds Ce x La1-x Os2

In the intermediate valent compounds Ce _x La_1–x Os₂ the Gd³⁺-ESR shows a non-linear increase of the linewidth H(T) in the temperature range 4.2K<T<300K for 0.3x1.0. This non-linearity of the thermal broadening is strongly altered by changing the Ce-concentration. The experimental results H(T,x) can quantitatively be described via hybridization of conduction electrons with Ce4f electrons: Due to hybridization, the Ce4f states are broadened but remain localized. The conduction electron density of states is reduced in the vicinity of the 4f states. In addition we observe a maximum in the electrical resistivity (T) of CeOs₂ at 270 K.     

Thermal oxidation of n-type ZnN films made by -sputtering from a zinc nitride target, and their conversion into p-type films

Transparent p-type thin films, containing zinc oxide phases, have been fabricated from the oxidation of n-type zinc nitride films. The zinc nitride thin films were deposited by rf-magnetron sputtering from a zinc nitride target in pure N₂ and pure Ar plasma. Films deposited in Ar plasma were conductive (resistivity 4.7×10⁻² Ω cm and carrier concentrations around 10²⁰ cm⁻³) Zn-rich Zn_xN_y films of low transmittance, whereas Zn_xN_y films deposited in N₂ plasma showed high transmittance (>80%), but five orders of magnitude lower conductivity. Thermal oxidation up to 550 C converted all films into p-type materials, exhibiting high resistivity, 10²–10³ Ω cm, and carrier concentration around 10¹³ cm⁻³. However, upon oxidation, the Zn_xN_y films did not show the zinc oxide phase, whereas Zn-rich Zn_xN_y films were converted into films containing ZnO and ZnO₂ phases. All films exhibited transmittance >85% with a characteristic excitonic dip in the transmittance curve at 365 nm. Low temperature photoluminescence revealed the existence of exciton emissions at 3.36 and 3.305 eV for the p-type zinc oxide film.     

In-situ control of different oxygen fugacity experimental study on the electrical conductivity of lherzolite at high temperature and high pressure

At pressure 1.0-4.0 GPa and temperature 1073-1423 K and under the control of oxygen fugacity (Mo+MoO₂, Fe+FeO and Ni+NiO), a YJ-3000t multi-anvil solid high-temperature and high-pressure apparatus and Solartron-1260 impedance/Gain-Phase analyzer were employed to analyze the electrical conductivity of lherzolite. The experimental results showed that: (1) within the range of the selected frequencies (10³-10⁶ Hz), either as viewed from the relationship between the real or imaginary part of complex impedance and the frequency, or from the relationship between modulus, phase angle and frequency, it can be seen clearly that the complex impedance has a strong dependence on frequency; (2) with the rise of temperature (T), the electrical conductivity (σ) increased, and Lg σ and 1/T follows the Arrhenius relationship; (3) with the rise of pressure, the electrical conductivity decreased, and activation enthalpy and temperature-independent pre-exponential factor decreased as well. And the activation energy and activation bulk volume of the main charge carrier in the lherzolite have been obtained for the first time, which are 1.68±0.02 eV and 0.04±0.01 cm³/mol, respectively; (4) under the given pressure and temperature, the electrical conductivity tends to increase with increasing oxygen fugacity, and under the given pressure, the activation enthalpy and pre-exponential factor tend to decrease with the rise of oxygen fugacity; (5) at 2.0 GPa and the control of the three solid buffers, Mo+MoO₂, Fe+FeO and Ni+NiO, the exponential factors of electrical conductivity variation range with oxygen fugacity are , and the theoretical model for the relationship between the electrical conductivity of lherzolite and the oxygen fugacity under high pressure has been established for the first time; (6) the electrical conduction mechanism of small polarons provides a reasonable explanation to the variation of conductivity of lherzolite with oxygen fugacity.     

A Mössbauer spectroscopic study of cobalt-iron molybdates

Fe _x Co_1–x MoO₄ compounds prepared by coprecipitation were studied by XRD, electrical conductivity and mainly by absorption and emission Mössbauer spectroscopy. FeMoO₄ and CoMoO₄ samples were shown to contain Fe³⁺ and Co³⁺, respectively, in solid solution. Three kinds of Fe _x Co_1–x MoO₄ solids can be described. Forx0.16: one has a -Co(Fe²⁺, Fe³⁺)MoO₄ solid solution. For 0.17x0.25: one has the same solid solution with its surface rich in Fe³⁺. Forx0.26: one has the same solid solution with only bulk Fe³⁺, and ferric molybdate. Studies of reduction by hydrogen and of catalytic reaction of mechanical mixtures of CoMoO₄ and ferric molybdate support these statements.     

Pressure effect onT c and resistivity: Localization in YBa2Cu3O x oxides

We have studied the effect of hydrostatic pressures up to 20 Kbar on the temperature dependence of the resistivity (T) and the effect of quasihydrostatic pressure up to 200 Kbar on the lattice parameters of YBa₂Cu₃O _x for different oxygen concentrations (x=6.95–6.2). Pressure produces a decrease of resistivity in normal state, an increase ofT _c , and a suppression of semiconducting-like resistivity (T) at lowx. The dependence of dT _c (x)/dP onx is nonmonotonic; the record values of dT _c /dP=(1.0±0.1) K/Kbar are observed forx=6.7 and 6.8. The derivative dln/dP atT=293 K differs by the factor 1.8 between superconducting and nonsuperconducting compounds. The compressibility and its pressure derivative alonga, b andc-directions in YBa₂Cu₃O _x have been determined. The most remarkable variation is alongc-direction. A nonmonotonic dependence of dk _c (x)/dP onx has been observed.The results are discussed in the context of localized effects in disordered oxygen-deficient YBa₂Cu₃O _x .     

Normal-state and superconducting properties of HfV2

We present experimental results for the low-temperature specific heat, electrical resistivity, elastic constants, ultrasonic attenuation and thermal conductivity of theC 15 Laves phase HfV₂ for both polycrystalline and single crystal samples. BelowT _c =9 K, the temperature dependence of the specific heat can roughly be approximated by aT ³ law over a large temperature range. This may be explained with strong coupling effects in consistence with the high value for C/T _c =1.9. Heat transport appears dominated by the known phonon contribution also belowT _c . There is no electronic contribution to the ultrasonic attenuation in HfV₂.Dedicated to B. Mühlschlegel on the occasion of his 60th birthday     

Superconductivity in simple cubic Te—Au alloys produced by ion irradiation

Superconducting simple cubic Te_100–x Au _x films (10<x<90) were produced by He⁺-irradiation at low temperatures as well as at room temperature. After low temperature irradiation the as-irradiated disordered samples forx<60 at % Au are in a semiconducting state which becomes unstable at about 230 K, and then transform into the s.c. superconducting phase. The resistivity of the s.c. phase displays a negative temperature coefficient for residual resistivity values larger than 100 cm. In comparison to splat cooled foils, the s.c. Te—Au phase in the He⁺-irradiated films is more homogeneous. The observed variation of the transition temperature to the superconducting state with Au content is explained as an interaction of the Fermi-surface with several Bragg-planes.     

Semi-insulating electrical properties of undoped inp after heat treatment in a phosphorus atmosphere

Nominally undoped InP wafers have been annealed in a phosphorus atmosphere under a pressure of about 5 bar at temperatures of 900 °C for about 80 h. It was found that the electrical properties of the samples changed considerably after this treatment. A room temperature resistivity of up to 2×10⁷cm (semi-insulating behaviour) was obtained in the bulk of the samples. The resistivity finally obtained depends on the starting carrier concentration of the untreated samples. The Hall coefficient and Hall mobility have been measured up to 600 °C. The results can be interpreted in terms of a deep electronic level (E _A=0.63 ... 0.65 eV below the conduction band). The Hall coefficient was always found to be negative resulting in a Hall mobility of 1.4 to 4.9×10³ cm²/Vs. The highest resistivity in nominally undoped bulk InP so far reported in the literature [1] was =3.6 × 10⁵cm. Therefore, this paper demonstrates for the first time that a really semi-insulating behaviour of >10⁷ cm can be achieved for bulk InP with the purity of nominally undoped material (10¹⁵ to 10¹⁶cm^–3).     

Nonlinear piezoresistance in p-type silicon

An investigation was made of the longitudinal and transverse piezoresistance and electrical conductivity of p-type silicon under conditions of uniaxial compression, x [111], in the temperature range 77–300°K and hole concentration range 2.10¹⁵–5.10¹⁸ cm^–3. The transverse component of the electrical conductivity tensor, [11¯2], was found to depend nonmonotonically on the degree of compression. Compression decreases ₄₄ and increases the combination ₁₁ + 2₁₂. The nonlinearity oi the longitudinal piezoresistance increases with increasing hole concentration and T = 77°K. The results are explained by the rearrangement of the valence band under the deformation and the formation near the top of this band of a section of the spectrum described in the approximation of low energies of Pikus-Bir theory.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 3–7, October, 1980.     

Properties of yttrium-iron-metalloid glasses

We report the results of measurements on metallic glasses of the form Y₆₆(Fe_1–x M _x )₃₄. For M = B we find that there is an extended range of glass formation (0x0.40) and that properties such as atomic density, electrical resistivity, microhardness, and thermal stability are functions ofx. For M = C, Si, or Ge we find a restricted range of glass formation (0 x0.10) and no significant changes in the properties of the glasses. Using Fe⁵⁷ Mössbauer effect spectroscopy we find that the M = B case is again unique in that the structure of the glass is sensitive to B content. We relate the differences in glass formation for the M = B and M = C, Si, Ge glasses to the existence of Y rich compounds in the C, Si, and Ge cases and the lack of such compounds in the M = B case.     

Competitive network modification in non-oxide chalcogenide glasses structural and motional properties of glasses in the system Li2S-P2S5-B2S3 studied by multinuclear NMR techniques

Non-oxide chalcogenide glasses based on more than one network former species have certain advantages for applications as solid electrolytes in batteries. To elucidate the influence of competitive glass-formation on the structural and motional properties of ionically conductive chalcogenide glasses, the system (Li₂S)_0.67[(B₂S₃)_1–y (P₂S₅) _y ]_0.33 has been characterized comprehensively by DSC, electrical conductivity and⁶Li,⁷Li,³¹P, and¹¹B solid state NMR techniques. The data obtained provide the first systematic characterization of the coformer effect in a chalcogenide glass system. Homogeneous glassy samples are formed fory=0.3 and 0.9y1.0, and microphase separated glasses for 0y0.2. The presence of a coformer leads to an increase in the electrical conductivity and a decrease of the activation energy, as compared to either binary system (Li₂S-B₂S₃ or Li₂S-P₂S₅), but only if homogeneous glasses are formed. The NMR data, in conjunction with systematic DSC and NMR studies of the binary systems (Li₂S)x(B₂S₃)_1–x (0.50x0.75) and (Li₂S) _x (P₂S₅)_1–x (0.50x0.70), lead to the following conclusions: 1)¹¹B MAS-NMR is well-suited to quantitate the amounts of three- and four coordinated boron atoms; in the binary glasses, the fraction of four-fold boron (N₄) increases with decreasing Li₂S/B₂S₃ ratio; in the ternary glasses N₄ increases with increasingy. 2)³¹P MAS-NMR spectra of the binary glasses discriminate between three different phosphorus microenvironments, assigned to sulfide-analogs of metaphosphate, pyrophosphate, and orthophosphate species, respectively. These results suggest the applicability of network modification models originally developed for oxide glasses. For the ternary glasses, the DSC and NMR data of glasses with low phosphorus contents are consistent with a phase separation model involving a Li-rich thioborate glass that contains all of the phosphorus component and a glass phase less rich in lithium containing the four-fold boron atoms. In addition to the structural studies, the⁷Li spin-spin relaxation times (T ₂) are used to characterize the mobility of the Li atoms. The activation energy of Li motion, determined from temperature dependentT ₂ measurements and analyzed by using BPP theory differs from that determined from conductivity measurements by a factor of 2–3, possibly reflecting the inapplicability of this theory to the lithium diffusion process.