共查询到20条相似文献,搜索用时 0 毫秒
1.
V. V. Polyakov K. P. Polyakova V. A. Seredkin G. S. Patrin G. V. Bondarenko 《Bulletin of the Russian Academy of Sciences: Physics》2011,75(8):1106-1107
The results from studies of the magneto-optical properties of Co-Ti-O nanogranulated films obtained under conditions of solid-state
reaction with oxygen exchange in CoO/Ti layered structures are presented. The magneto-optical spectra of the polar Kerr effect
in films with a relative volume of the magnetic fraction of 0.38 to 0.64 has a resonance character in the wavelength range
of 450–650 nm. The Kerr rotation angle of the films increases by a factor of 3–5, relative to conventional Co films. 相似文献
2.
Xiao Han Jiaqi Zhu Jiecai Han Manlin Tan Wei Gao 《Applied Physics A: Materials Science & Processing》2008,91(3):529-533
Tetrahedral amorphous carbon (ta-C) films deposited using a filtered cathodic vacuum arc (FCVA) system, have high intrinsic
stress which limits their application as protective coatings. To reduce the film stress and to improve the adhesion, a multilayer
structure is deposited at a gradient substrate negative bias from 1500 V to 80 V. This paper investigates the stress, microstructure
and nano-mechanical properties of graded multilayer ta-C film on Si substrates. Compared with that of single-layer films deposited
at optimised bias, the graded multilayer film has low stress without a decline in hardness and Young’s modulus. Microstructural
evaluation of the multilayer film using visible Raman spectra shows that the average content of the sp3 bonds of the multilayer film remain at a high level. Nanoscratch testing illustrates favorable scratch resistance and good
adhesion of the multilayer film. Scanning electron microscope (SEM) observation confirms the collapse of the film surface
along the scratching trace. Finally, deposition on single crystal germanium substrates of a durable coating ∼ 1100 nm thick,
and composed of three graded multilayer films is demonstrated.
PACS 81.05.Uw; 81.15.Jj; 68.65.Ac; 68.55.Nq; 68.60.Bs 相似文献
3.
We have analyzed the optical properties of a-Ge30-xSbxS70 chalcogenide glass films (x=0,10,20 and 30 at%); the chalcogenide films were prepared by vacuum thermal evaporation. The optical-absorption data indicate that the absorption mechanism is non-direct transition. We found that the optical band gap, Eopt, decreases from 2.04±0.01 to 1.74±0.01 eV, whereas the refractive index increases with increasing Sb content. Data are analyzed by the Wemple equation, which is based on the single-oscillator model. 相似文献
4.
5.
6.
E. A. Gan’shina A. A. Bogoroditskii R. Yu. Kumaritova V. V. Bibikova G. V. Smirnitskaya N. I. Tsidaeva 《Physics of the Solid State》2001,43(6):1097-1102
Multilayer films of Fe(x)/Pd(30 Å) (6≤x≤30 Å) are investigated with the help of the transversal Kerr effect (TKE) with incident light in the energy range 1.3–3.6 eV. Oscillations of the TKE depending on the thickness of the iron layer are revealed. The off-diagonal element of the dielectric tensor ? 2 ′ is calculated using themeasured values of the TKE for two incidence angles of light and the optical constants of all samples. It is shown that the quantity ? 2 ′ ω2 (where ω is the frequency of incident light), which is proportional to the interband density of states, also oscillates, and its oscillations are similar in character to oscillations of the Kerr effect. The observed oscillatory dependence of the TKE and of the interband density of states are related to the manifestation of quantum confinement effects. 相似文献
7.
Xinwen Huang 《Applied Surface Science》2009,255(7):4274-4278
The effect of the amorphous thin layer on the surface growth of amorphous/crystalline binary multilayer films has been studied by using a continuum model. It is shown that both the surface roughness and the growth exponent of amorphous/crystalline binary multilayer films decrease with increasing thickness ratio between amorphous and crystalline layers. Our simulations have also revealed, in contrast to the monotonous rise in surface roughness observed in single-layer films grown on flat substrates, the surface growth of a multilayer film consists of two processes: interface smoothing and roughening, namely the film roughness decreases during the growth of amorphous thin layers but increases monotonously during the growth of crystalline thin layers. The observed interface smoothing and roughening can be obviously influenced by the change in the thickness ratio between amorphous and crystalline layers. The rise in thickness ratio between amorphous and crystalline layers enhances the interface smoothing effect but lowers the interface roughening effect and consequently shows a marked smoothing effect on the surface roughness. 相似文献
8.
9.
10.
Huaping Zuo Zhenkun Wang Yuhua Xiao Dongsheng Yao Yanbo Li 《Journal of magnetism and magnetic materials》2009,321(20):3453-3456
Discontinuous [FeCoSi (d)/native-oxide]50 multilayer films were fabricated by DC magnetron sputtering without any post-deposition treatment. The films exhibit good soft magnetic properties with initial permeability μi larger than 100, the saturation magnetization 4πMs and the in-plane uniaxial anisotropy field Hk increase as the magnetic FeCoSi layer thickness d is increased from 5.5 to 20.5 Å. As a consequence, the ferromagnetic resonance frequencies fr of the films increase from 2.0 to 3.9 GHz. The combination of high fr and large μi makes these films potential candidates for magnetic devices applied in the high-frequency range. The origin of the excellent high-frequency properties in discontinuous FeCoSi/native-oxide multilayer films is discussed. 相似文献
11.
ZnO/Cu/ZnO multilayers on glass with different copper layer thickness were prepared by simultaneous RF magnetron sputtering of ZnO and dc magnetron sputtering of Cu. Different optimization procedure were used for good transparent conductive film. Several analytical tools such as spectrophotometer, scanning electron microscope (SEM), four point probes were used to explore the causes of the changes in electrical and optical properties. The sheet resistance of the structure was severely influenced by the deposition condition of both top ZnO and intermediate Cu layer. Effect of substrate temperature and annealing treatment on ZnO and Cu layer was analyzed. A sheet resistance of 10 Ω/sq and transmittance over 85% at 580 nm wavelength was achieved and could be reproduced by controlling the preparation process parameter. The results of an optimization condition of both oxide layers and metallic Cu layers are illustrated. 相似文献
12.
In this paper we report on the electrical and optical properties of amorphous carbon (a-C) and hydrogenated amorphous carbon (a-C:H) films. Resistivity of both types of films decreases with increase in temperature. At lower temperatures (60-250 K) the electron transport is due to variable range hopping for the a-C films. At higher temperatures (300-430 K) it is thermally activated for both types of films. Analysis of the heterojunction between diamond-like carbon (DLC) and bulk silicon (Si) leads to the conclusion that our a-C films are of n-type and our a-C:H films are of p-type. The optical measurements with DLC revealed a Tauc bandgap of 0.6 eV for the a-C films and 1-1.2 eV for the a-C:H films. An Urbach energy around 170 meV could be determined for the a-C:H films. Strain versus resistance plots were measured resulting in piezoresistive gauge factors around 50 for the a-C films and in between 100 and 1200 for the a-C:H films. 相似文献
13.
14.
15.
采用直流磁控溅射方法在不同的氩气-氮气(Ar-N2)气氛中制备了非晶氮化镓(a-GaN)薄膜. X射线衍射分析(XRD)和拉曼光谱(Raman)表明薄膜具有非晶结构. 通过椭偏光谱(SE)得到薄膜的折射率和厚度都随着氩气分量的增多而增大. 紫外—可见光谱(UV-Vis)的测量得到,当氩气分量R,即Ar/(Ar+N2),为0%时,薄膜的光学带隙为3.90eV,比晶体GaN (c-GaN) 的较大,这主要是由非晶结构中原子无序性造成的;而当R
关键词:
非晶氮化镓
溅射
光学带隙
带尾态 相似文献
16.
The complex polar Kerr effect spectra in diamagnetically substituted hexagonal ferrite system PbFe12–xGaxO19 (x= 0, 1, 3,4) at 290 K between 2 and 5·5 eV are studied. The previously published data on optical constants in this system are employed to obtain the offdiagonal permittivity tensor element spectra.Dedicated to Dr. Svatopluk Krupika on the occasion of his 65th birthday. 相似文献
17.
Magneto-optical properties of terbium glass 总被引:3,自引:0,他引:3
Yasi Jiang?Shanghai Institute of Optics Fine Mechaincs Academia Sinica P. . Box - Shanghai China)Michaell J. Myers Daniel Rhonehouse 《Chinese Journal of Lasers》1992,(6)
Dispersion of the Verdet Constant of Tb-glass is investigated.The cause of thisdispersion is dicussed by a comparison with the dispersion of refractive index.Relationship be-tween the Verdet constant and Tb~(3 ) concentration is summaried and can be used to estimatethe Verdet constant of Tb~(3 )-materials. 相似文献
18.
Thin films of Ge100−xFex (x in at%) alloys, fabricated by thermal co-evaporation, have an amorphous structure at compositions x<∼40, although an unidentified crystalline phase with an FCC symmetry also exists at low Fe content. Magnetization versus temperature curves show that saturation magnetization is non-zero (1 to 2.5 emu/cm3) and remains nearly unchanged up to the highest measured temperature of 350 K. Magnetic hysteresis loops at room temperature show a typical ferromagnetic shape, complete saturation occurring by 1–2 kOe. These results may indicate ferromagnetic ordering at room temperature. No definite tendency is observed in the compositional dependence of saturation magnetization. 相似文献
19.
20.
Amorphous gallium nitride (a-GaN) thin films were deposited on glass substrate by electron beam evaporation technique at room
temperature and high vacuum using N
2 as carrier gas. The structural properties of the films was studied by X-ray diffraction (XRD) and scanning electron microscope
(SEM). It was clear from XRD spectra and SEM study that the GaN thin films were amorphous. The absorbance, transmittance and
reflectance spectra of these films were measured in the wavelength range of 300–2200 nm. The absorption coefficient spectral
analysis in the sharp absorption region revealed a direct band gap of E
g = 3:1 eV. The data analysis allowed the determination of the dispersive optical parameters by calculating the refractive
index. The oscillator energy E
0 and the dispersion energy E
d, which is a measure of the average strength of inter-band optical transition or the oscillator strength, were determined.
Electrical conductivity of a-GaN was measured in a different range of temperatures. Then, activation energy of a-GaN thin
films was calculated which equalled E
a = 0:434 eV. 相似文献