Multi-step laser excitation of the highly excited states of zinc

We report experimental data on the highly excited states of zinc in the energy range 74,625-75,740 cm⁻¹ using two-step laser excitation scheme in conjunction with a thermionic diode ion detector. The 4s4p ³P₁ inter-combination level at 32501.399 cm⁻¹ was populated using a frequency doubled dye laser. The 4s5s ³S₁ level at 53672.28 cm⁻¹ gets populated from the ASE (amplified spontaneous emission) of the second step dye laser. The Rydberg series 4snp ³P₂ (12 ? n ? 60), 4snp ¹P₁ (16 ? n ? 30) and parity forbidden transitions 4sns ³S₁ (19 ? n ? 44) have been observed. A two parameter fit to excitation energies of the observed series yields the binding energy of the 4s5s ³S₁ level as 22097.03 ± 0.03 cm⁻¹ and consequently, the first ionization potential of zinc is determined as 75769.31 ± 0.05 cm⁻¹, that is in excellent agreement with the earlier work.     

The application of Raman and anti-stokes Raman spectroscopy for in situ monitoring of structural changes in laser irradiated titanium dioxide materials

The use of Raman and anti-stokes Raman spectroscopy to investigate the effect of exposure to high power laser radiation on the crystalline phases of TiO₂ has been investigated. Measurement of the changes, over several time integrals, in the Raman and anti-stokes Raman of TiO₂ spectra with exposure to laser radiation is reported. Raman and anti-stokes Raman provide detail on both the structure and the kinetic process of changes in crystalline phases in the titania material. The effect of laser exposure resulted in the generation of increasing amounts of the rutile crystalline phase from the anatase crystalline phase during exposure. The Raman spectra displayed bands at 144 cm⁻¹ (A1g), 197 cm⁻¹ (Eg), 398 cm⁻¹ (B1g), 515 cm⁻¹ (A1g), and 640 cm⁻¹ (Eg) assigned to anatase which were replaced by bands at 143 cm⁻¹ (B1g), 235 cm⁻¹ (2 phonon process), 448 cm⁻¹ (Eg) and 612 cm⁻¹ (A1g) which were assigned to rutile. This indicated that laser irradiation of TiO₂ changes the crystalline phase from anatase to rutile. Raman and anti-stokes Raman are highly sensitive to the crystalline forms of TiO₂ and allow characterisation of the effect of laser irradiation upon TiO₂. This technique would also be applicable as an in situ method for monitoring changes during the laser irradiation process.     

Near-infrared emissions and quantum efficiencies in Tm-doped heavy metal gallate glasses for S- and U-band amplifiers and 1.8 μm infrared laser

Intense 1.8 μm and efficient 1.48 μm infrared emissions have been recorded in Tm³⁺-doped alkali-barium-bismuth-gallate (LKBBG) glasses with low phonon energies under the excitation of 792 nm diode laser. The maximum emission cross-sections for 1.8 and 1.48 μm emission bands are derived to be 6.26×10⁻²¹ and 3.34×10⁻²¹ cm², respectively, and the peak values are much higher than those in Tm³⁺-doped ZBLAN glass. In low-concentration doping, the full-widths at half-maximum (FWHMs) of the two emission bands are 223 and 122 nm, and the quantum efficiencies of the ³F₄ and ³H₄ levels are proved to be ∼100% and 86%, respectively. When the doping concentration increases to 1 wt%, the quantum efficiency of the ³H₄ level is reduced to 60% due to the cross-relaxation processes in high-concentration doping. Efficient 1.8 μm infrared emission in Er³⁺/Tm³⁺-codoped LKBBG glass has also been achieved under the excitation of 970 nm diode laser, and the probability and the efficiency of non-radiative energy transfer from Er³⁺ to Tm³⁺ are as high as 354 s⁻¹ and 58.4%, respectively. Efficient and broad 1.8 and 1.48 μm infrared emission bands indicate that Tm³⁺-doped LKBBG glasses are suitable materials in developing S- and U-band amplifiers and 1.8 μm infrared laser.     

High level compressive residual stresses produced in aluminum alloys by laser shock processing

Laser shock processing (LSP) has been proposed as a competitive alternative technology to classical treatments for improving fatigue and wear resistance of metals. We present a configuration and results for metal surface treatments in underwater laser irradiation at 1064 nm. A convergent lens is used to deliver 1.2 J/cm² in a 8 ns laser FWHM pulse produced by 10 Hz Q-switched Nd:YAG, two laser spot diameters were used: 0.8 and 1.5 mm.Results using pulse densities of 2500 pulses/cm² in 6061-T6 aluminum samples and 5000 pulses/cm² in 2024 aluminum samples are presented. High level of compressive residual stresses are produced −1600 MPa for 6061-T6 Al alloy, and −1400 MPa for 2024 Al alloy. It has been shown that surface residual stress level is higher than that achieved by conventional shot peening and with greater depths. This method can be applied to surface treatment of final metal products.     

Empirical line parameters of methane from 1.1 to 2.1 μm

To provide line parameters for the near-infrared methane spectrum, 35,306 line positions and intensities at room temperature were retrieved between 6180 and 9200 cm⁻¹, along with 4936 lines between 4800 and 5500 cm⁻¹. For this, laboratory absorption spectra were recorded at 0.010-0.022 cm⁻¹ resolution using the McMath-Pierce Fourier Transform Spectrometer located on Kitt Peak in Arizona. Positions were calibrated using CO transitions at 2.3 and 1.6 μm and H₂O lines at 1.9 and 1.3 μm. The minimum line intensity included was 3.7×10⁻²⁶ cm⁻¹/(molecule cm⁻²), and the combined sum of the intensities in these two intervals was 7.085×10⁻²⁰ cm⁻¹/(molecule cm⁻²) at 296 (±4) K. Quantum assignments from the literature were matched for 1% of the features, and a new methane database was compiled for the near-infrared.     

Control of the cool/warm white light generation from lanthanide ions in monoclinic double tungstate crystals

We studied the physical effects arising from the combination of several concentrations of luminescent ions, Ho, Tm and Yb in a biaxial crystal to achieve the optimum multicolour emission for cool or warm white light generation. White light is generated by the simultaneous emission and combination of three photons at wavelengths, 475 (blue), 542 (green) and 651 nm (red) with associated energies, 21,053 cm⁻¹, 18,450 cm⁻¹ and 15,361 cm⁻¹, respectively. The physical mechanism that generated the white light involved the absorption of infrared photons and after partial energy transfer to neighbouring ions, excited state absorption and upconversion phenomena took place to combine the emerging photons at the above wavelengths. White light is generated with rather high efficiency and very low excitation threshold. The control of simultaneous light generation is accomplished with the amount of dopant ions in the crystal.     

Surface modifications of crystalline silicon created by high intensity 1064 nm picosecond Nd:YAG laser pulses

A study of silicon modification induced by a high intensity picosecond Nd:YAG laser, emitting at 1064 nm, is presented. It is shown that laser intensities in the range of 5 × 10¹⁰-0.7 × 10¹² W cm⁻² drastically modified the silicon surface. The main modifications and effects can be considered as the appearance of a crater, hydrodynamic/deposition features, plasma, etc. The highest intensity of ∼0.7 × 10¹² W cm⁻² leads to the burning through a 500 μm thick sample. At these intensities, the surface morphology exhibits the transpiring of the explosive boiling/phase explosion (EB) in the interaction area. The picosecond Nd:YAG laser-silicon interaction was typically accompanied by massive ejection of target material in the surrounding environment. The threshold for the explosive boiling/phase explosion (TEB) was estimated to be in the interval 1.0 × 10¹⁰ W cm⁻² < TEB ≤ 3.8 × 10¹⁰ W cm⁻².     

Upconversion luminescence and optical power limiting effect based on two- and three-photon absorption processes of ZnO crystal

Near-infrared to UV and visible upconversion luminescence was observed in single-crystalline ZnO under an 800 nm infrared femtosecond laser irradiation. The optical properties of the crystal reveal that the UV and VIS emission band are due to the exciton transition (D₀X) bound to neutral donors and the deep luminescent centers in ZnO, respectively. The relationship between the upconversion luminescence intensity and the pump power of the femtosecond laser reveals that the UV emission belongs to three-photon sequential band-to-band excitation and the VIS emission belongs to two-photon simultaneous defect-absorption induced luminescence. A saturation phenomenon and polarization-dependent effect are also observed in the upconversion process of ZnO. A very good optical power limiting performance at 800 nm has been demonstrated. The two- and three-photon absorption coefficients of ZnO crystal were measured to be 0.2018 cm GW⁻¹ and 7.102 × 10⁻³ cm³ GW⁻², respectively. The two- and three-photon cross sections were calculated to be 1.189 × 10⁻⁵¹ cm⁴ s and 1.040 × 10⁻⁸⁰  cm⁶ s², respectively.     

Preliminary analysis of CH3D from 3250 to 3700 cm

The infrared spectrum of CH₃D from 3250 to 3700 cm⁻¹ was studied for the first time to assign transitions involving the ν₂ + ν₃, ν₂ + ν₅, ν₂ + ν₆, ν₃ + 2ν₆ and 3ν₆ vibrational states. Line positions and intensities were measured at 0.011 cm⁻¹ resolution using Fourier transform spectra recorded at Kitt Peak with isotopically enriched samples. Some 2852 line positions (involving over 900 upper state levels) and 874 line intensities were reproduced with RMS values of 0.0009 cm⁻¹ and 4.6%, respectively. The strongest bands were found to be ν₂ + ν₃ at 3499.7 cm⁻¹ and ν₂ + ν₆ at 3342.5 cm⁻¹ with integrated strengths, respectively, of 8.17 × 10⁻²⁰ and 2.44 × 10⁻²⁰ (cm⁻¹/molecule · cm⁻²) at 296 K (for 100% CH₃D). The effective Hamiltonian was expressed in terms of irreducible tensor operators and adapted to symmetric top molecules. Its present configuration in the MIRS package permitted simultaneous consideration of the four lowest polyads of CH₃D: the Ground State (G.S.), the Triad from 6.3 to 9.5 μm, the Nonad from 3.1 to 4.8 μm and now the Enneadecad (19 bands) from 2.2 to 3.1 μm. The CH₃D line parameters for this interval were calculated to create a new database for the 3 μm region.     

Fabrication of p-type Li-doped ZnO films by pulsed laser deposition

p-Type ZnO thin films have been realized via doping Li as acceptor by using pulsed laser deposition. In our experiment, Li₂CO₃ was used as Li precursor, and the growth temperature was varied from 400 to 600 °C in pure O₂ ambient. The Li-doped ZnO film prepared at 450 °C possessed the lowest resistivity of 34 Ω cm with a Hall mobility of 0.134 cm² V⁻¹ s⁻¹ and hole concentration of 1.37 × 10¹⁸ cm⁻³. X-ray diffraction (XRD) measurements showed that the Li-doped ZnO films grown at different substrate temperatures were of completely (0 0 2)-preferred orientation.     

Kinetic studies of chlorobenzene reactions with hydrogen atoms and phenyl radicals and the thermochemistry of 1-chlorocyclohexadienyl radicals

Atomic H and Cl were monitored by time-resolved resonance spectroscopy in the vacuum ultraviolet, following 193 nm laser flash photolysis of C₆H₅Cl and mixtures with NH₃, over 300-1020 K and with Ar bath gas pressures from 30 to 440 mbar. Below 550 K simple exponential decays of [H] were observed, and attributed to addition to form chlorocyclohexadienyl radicals. This addition was reversible over 550-630 K and the equilibrium constant was determined by a third law approach. The addition rate constant can be summarized as (1.51 ± 0.11) × 10⁻¹¹exp((−1397 ± 29)/T) cm³ molecule⁻¹ s⁻¹ (300-630 K, 1σ uncertainties), and the C-H bond dissociation enthalpy in 1-chlorocyclohexadienyl was determined to be 108.1 ± 3.3 kJ mol⁻¹ at 298 K. At higher temperatures the photolysis of chlorobenzene yielded H atoms, which is attributed to the reaction of phenyl with chlorobenzene with a rate constant of (4.5 ± 1.8) × 10⁻¹⁰exp((−4694 ± 355)/T) cm³  molecule⁻¹ s⁻¹ over 810-1020 K. These and other reaction pathways are discussed in terms of information about the potential energy surface obtained via B3LYP/6-311G(2d,d,p) density functional theory.     

Crystallization of 21.25Gd2O3-63.75MoO3-15B2O3 glass induced by femtosecond laser at the repetition rate of 250 kHz

We report the formation of β′-Gd₂(MoO₄)₃ (GMO) crystal on the surface of the 21.25Gd₂O₃-63.75MoO₃-15B₂O₃ glass, induced by 250 kHz, 800 nm femtosecond laser irradiation. The morphology of the modified region in the glass was clearly examined by scanning electron microscopy (SEM). By micro-Raman spectra, the laser-induced crystals were confirmed to be GMO phases and it is found that these crystals have a strong dependence on the number and power of the femtosecond laser pulses. When the irradiation laser power was 900 mW, not only the Raman peaks of GMO crystals but also some new peaks at 214 cm⁻¹, 240 cm⁻¹, 466 cm⁻¹, 664 cm⁻¹ and 994 cm⁻¹which belong to the MoO₃ crystals were observed. The possible mechanisms are proposed to explain these phenomena.     

Widely phase-matched tunable difference-frequency generation in periodically poled LiNbO3 crystal

We report on the development of a laser source in the mid-infrared spectral region based on difference-frequency generation (DFG) in a periodically poled LiNbO₃ (PPLN) crystal. Continuously tunable coherent radiation from 2.75 to 4.78 μm was produced by optical parametric interaction between a diode-pumped monolithic continuous-wave (CW) Nd:YAG laser operating at 1.064 μm and a CW Ti:Sapphire laser tunable from 767 to 871 nm. Temperature-dependent quasi-phase-matched DFG wavelength acceptance bandwidth was studied and characterized. An empiric formula is given to estimate the phase-matched wavelength acceptance bandwidth as a function of the crystal temperature at Λ = 22.5 μm. A large frequency scan of 128 cm⁻¹ (about 78 cm⁻¹ above 1 μW) near 4.2 μm was achieved. The whole absorption spectrum of the P and R branches of the ν₃ band of atmospheric carbon dioxide has been recorded with a single phase-matched frequency scan.     

Generation of tunable infrared radiation in rubidium titanyl phosphate crystal for the optical measurement of number density, absorption cross-section of methane gas

Tunable near-infrared radiation has been generated in a rubidium titany1 phosphate (RTP) crystal by employing non-collinear difference-frequency mixing (DFM) technique. The input radiation sources are Nd:YAG laser radiation and its second harmonic pumped dye laser radiation. For the generation of 2.0 radiation, the maximum value of the conversion efficiency (quantum) obtained in the process is 49% from the dye (0.6945 μm) to the infrared (2.0 μm) radiation in the 7.9-mm-long crystal. The generated tunable mid-infrared radiation has been used to measure the number density, absorption cross-section and minimum detectable concentration of methane gas in its 2ν₃ band in a multi-pass cell at 30.075 Torr pressure. The number density and column density of the methane molecules are found to be 1.068×10¹⁸ cm⁻³ and 3.02×10²¹ cm⁻², respectively, whereas the minimum still-detectable concentration at 1.658 μm wavelength is estimated to be 4.523×10¹⁷/cm³.     

Laser spectroscopy of the B[17.7]8-X8 and C[19.3]9-X8 transitions of holmium monochloride

Several new transitions of holmium monochloride (HoCl) have been studied at high resolution using laser excitation spectroscopy. Two main transitions, B[17.7]8-X8 and C[19.3]9-X8 have been observed and five bands, 0-0, 0-1, 1-0, 1-1, and 2-1 of the B-X transition and three bands, 0-0, 0-1, and 0-3 of the C-X transition have been obtained at high resolution and rotationally analyzed. Among several low lying states observed in dispersed fluorescence was a strong transition from the C state to a state ∼2140 cm⁻¹ above the ground state. Excitation spectra of this transition have shown that there are apparently two states, ∼6 cm⁻¹ apart. Comparison with ligand field theory calculations are consistent with assigning these states to the excited low lying Ho⁺(4f¹¹6s)Cl⁻ configuration. Several other low lying electronic states have been observed in dispersed fluorescence spectra. Although their assignments could not be established, their energies suggest that they are from the Ho⁺(4f¹⁰6s²)Cl⁻ or Ho⁺(4f¹¹6s)Cl⁻ configurations. Rotational constants have been obtained for the B[17.7]8 and C[19.3]9 states and have been used to speculate on the possible electron configurations for these states.     

Indium zinc oxide thin films deposited by sputtering at room temperature

The deposition of amorphous indium zinc oxide (IZO) thin films on glass substrates with n-type carrier concentrations between 10¹⁴ and 3 × 10²⁰ cm⁻³ by sputtering from single targets near room temperature was investigated as a function of power and process pressure. The resistivity of the films with In/Zn of ∼0.7 could be controlled between 5 × 10⁻³ and 10⁴ Ω cm by varying the power during deposition. The corresponding electron mobilities were 4-18 cm² V⁻¹ s⁻¹.The surface root-mean-square roughness was <1 nm under all conditions for film thicknesses of 200 nm. Thin film transistors with 1 μm gate length were fabricated on these IZO layers, showing enhancement mode operation with good pitch-off characteristics, threshold voltage 2.5 V and a maximum transconductance of 6 mS/mm. These films look promising for transparent thin film transistor applications.     

A high resolution spectroscopic study of rhodium monochloride

Rhodium monochloride has been observed and characterized spectroscopically for the first time. The RhCl molecules were produced in a laser vaporization molecular beam source by the reaction of a laser vaporized rhodium plasma with CCl₄ doped in helium, and laser-induced fluorescence and dispersed fluorescence were used to study 15 of the strongest bands spanning the 535-415 nm region. Twelve of these bands were studied at high resolution using a cw ring dye laser. Two low-lying states separated by 140 cm⁻¹ have been observed. The ground state has Ω = 2 and is attributed to a ³Π_i state resulting from a δ⁴π³σ¹ electronic configuration. The other low-lying state has Ω = 3 and is attributed to a ³Δ_i state resulting from a δ³π⁴σ¹ electronic configuration. Excited states with Ω values ranging from 1 to 4 have been observed. Dispersed fluorescence from these excited levels has been used to identify a large number of low-lying electronic states within an energy range of 5200 cm⁻¹ and has also been used to determine a ground state vibrational frequency of ∼348 cm⁻¹. Λ-doublings have been observed in all the transitions studied at high resolution.     

Global modeling of the lower three polyads of PH3: Preliminary results

In order to model the high-resolution infrared spectrum of the phosphine molecule in the 3 μm region, a global approach involving the lower three polyads of the molecule (Dyad, Pentad and Octad) as been applied using an effective hamiltonian in the form of irreducible tensors. This model allowed to describe all the 15 vibrational states involved and to consider explicitly all relevant ro-vibrational interactions that cannot be accounted for by conventional perturbation approaches. 2245 levels (up to J = 14) observed through transitions arising from 34 cold and hot bands including all available existing data as well as new experimental data have been fitted simultaneously using a unique set of effective hamiltonian parameters. The rms achieved is 0.63 × 10⁻³ cm⁻¹ for 450 Dyad levels, 1.5 × 10⁻³ cm⁻¹ for 1058 Pentad levels (from 3585 transitions) and 4.3 × 10⁻³ cm⁻¹ for 737 Octad levels (from 2243 transitions). This work represents the first theoretical modeling of the 3 μm region. It also improves the modeling of the region around 4.5 μm by dividing the rms reported by previous works by a factor 6. A preliminary intensity analysis based on consistent sets of effective dipole moment operators for cold and hot bands has been simultaneously undertaken for direct comparison between observed and modeled absorption from 700 to 3500 cm⁻¹.     

Spectroscopy of NdO: New results

¹⁴²NdO molecules have been produced by heating ¹⁴²Nd₂O₃ to about 2100 K in a vacuum furnace in the presence of argon gas. A ring dye laser operating with DCM dye has been used to excite ¹⁴²NdO transitions in the 636-666 nm spectral region, and induced fluorescence has been spectroscopically analysed at high resolution with a Fourier transform spectrometer. Contributions from thermal emission have been simultaneously observed. Two new low-lying electronic states have been detected, at energies of about 2708 and 4139 cm⁻¹, designated as [2.7], most probably observed at ν = 1, and [4.1], likely to be (2)6 (observed at ν = 0). The ν = 1 level of the (1)6 state, already known at ν = 0, has been observed for the first time. Most levels pumped by the laser, between 14 000 and 17 400 cm⁻¹, could be identified from earlier work. In addition, by studying in more detail recently obtained fluorescence spectra [J. Mol. Spectrosc. 225 (2004) 132] spectroscopic constants have been improved for a number of states. Finally, from thermal emission spectra, rotational analyses of the 0-0 bands of two new systems, [16.4] − (2)5 and [14.1] − X4, and reanalyses at higher resolution of the 0-0 bands of the systems V, VII, VIII, and X have been carried out. A consistent set of spectroscopic constants of the levels of ¹⁴²NdO characterized as yet is presented.     

Local chemical transformations in poly(dimethylsiloxane) by irradiation with 248 and 266 nm

Poly(dimethylsiloxane) (PDMS) has been irradiated with a frequency quadrupled Nd:YAG laser and a KrF^*-excimer laser at a repetition rate of 1 Hz. The analysis of ablation depth versus pulse number data reveals a pronounced incubation behavior. The thresholds of ablation (266 nm: 210 mJ cm⁻², 248 nm: 940 mJ cm⁻²) and the corresponding effective absorption coefficients α_eff (266 nm: 48900 cm⁻¹, 248 nm: 32700 cm⁻¹, α_lin = 2 cm⁻¹) were determined. The significant differences in the ablation thresholds for both irradiation wavelengths are probably due to the different pulse lengths of both lasers. Since the shorter pulse length yields a lower ablation threshold, the observed incubation can be due to a thermally induced and/or a multi-photon absorption processes of the material or impurities in the polymer.Incubation of polymers is normally related to changes of the chemical structure of the polymer. In the case of PDMS, incubation is associated with local chemical transformations up to several hundred micrometers below the polymer surface. It is possible to study these local chemical transformations by confocal Raman microscopy, because PDMS is transparent in the visible. The domains of transformation consist of carbon and silicon, as indicated by the appearance of the carbon D- and G-bands between 1310 and 1610 cm⁻¹, a band appearing between 502 and 520 cm⁻¹ can be assigned to mono- and/or polycrystalline silicon.The ablation products, which are detected in the surroundings of the ablation crater consist of carbon and amorphous SiO_x (x ≈ 1.5) as detected by infrared spectroscopy.