Optical transmission through metal/dielectric multilayer films perforated with periodic subwavelength slits

The transmission of p-polarized plane wave through Ag/SiO₂ multilayer films perforated with periodic subwavelength air slits is investigated by using the finite-difference time-domain (FDTD) method. The results show that the optical transmission property is mediated by the interference among the propagating coupled-SPP modes along the lateral direction inside the SiO₂ layers and the conditions of Fabry-Pérot-like resonance along the longitudinal direction together. When some geometric parameters are suitably initialized, the high transmission peaks can split into more peaks as the functional layer (metal/dielectric/metal sandwich stack) number increases, and the wavelength of the same-order transmission peak exhibits a red shift as the grating period increases.     

Optical properties of MgxZn1−xO thin films deposited on silicon and sapphire substrate by rf magnetron sputtering

The index dispersion at UV–VIS range for polycrystalline Mg_xZn_1−xO films on silicon with different Mg concentration was obtained by spectroscopic ellipsometry (SE) method. It decreases with the increase of the Mg content. Above the relative peak wavelength, they are well fitted by the first-order Sellmeier relation. The band gap of films on sapphire of different Mg content was determined from transmission measurements. Photoluminescence (PL) illustrated that for Mg_xZn_1−xO films every PL peak corresponded to a special excitation wavelength. The wavelength of the PL peak was proportional to the special excitation wavelength. A strong peak was obtained in the blue band for the films due to the large amount of oxygen vacancies caused by excess Zn and Mg atoms, while weak peak at ultraviolet band.     

IR and XPS investigation of visible-light photocatalysis—Nitrogen-carbon-doped TiO2 film

To use solar irradiation or interior lighting efficiently, we sought a photocatalyst with high reactivity under visible light. Nitrogen and carbon doping TiO_2−x−yN_xC_y films were obtained by heating the TiO₂ gel in an ionized N₂ gas and then were calcined at 500 °C. The TiO_2−x−yN_xC_y films have revealed an improvement over the TiO₂ films under visible light (wavelength, 500 nm) in optical absorption and photocatalytic activity such as photodegradation of methyl orange. X-ray photoemission spectroscopy, infrared spectrum and UV-visible (UV-vis) spectroscopy were used to find the difference of two kinds of films. Nitrogen and carbon doped into substitutional sites of TiO₂ has been proven to be indispensable for band-gap narrowing and photocatalytic activity.     

Fabrication of CdTe solar cell using an Inx(OOH,S)y/CdS double layer as a heterojunction counterpart

An In_x(OOH,S)_y/CdS double layer was utilized as a heterojunction counterpart in CdTe solar cells to enhance the transmission of light through the window layer. An In_x(OOH,S)_y/CdS double layer was deposited by chemical bath deposition onto an ITO-coated Corning glass substrate in varying thickness combinations. In_x(OOH,S)_y is porous, and the interface between the In_x(OOH,S)_y and CdS layers overlaps to a large extent. The In_x(OOH,S)_y/CdS double layer showed a higher optical transmittance in the 500–600 nm wavelength range compared to the CdS layer. However, the efficiency of In_x(OOH,S)_y/CdS/CdTe solar cells was not improved due to the lower open circuit voltage. It is considered that the In_x(OOH,S)_y/CdS window layer is less n-type, which is most likely due to the mixing of the two layer during CdTe deposition at 575 °C.     

Activation energy of water vapor and oxygen transmission through TiNxOy/PET gas barrier films

Titanium oxynitride (TiN_xO_y) films were deposited on polyethylene terephthalate (PET) substrates by means of a reactive radio frequency (RF) magnetron sputtering system in which the power density was the varied parameter. Experimental results show that the deposited TiN_xO_y films with a thickness of about 55 nm have similar contents of TiN, TiN_xO_y and TiO₂ bonds, although they are deposited at different power densities. The TiN_xO_y films deposited at a lower power density have fewer internal defects and grain boundaries and possess higher activation energy and a lower rate of water vapor and oxygen transmission through TiN_xO_y/PET films.     

Distinguishing the core from the shell in MnO(x)/MnO(y) and FeO(x)/MnO(x) core/shell nanoparticles through quantitative electron energy loss spectroscopy (EELS) analysis

The structural and chemical characterization of inverted bi-magnetic MnO_x(antiferromagnetic)/MnO_y(ferrimagnetic) and FeO_x(soft-ferrimagnetic)/MnO_x(hard-ferrimagnetic) core/shell nanoparticles has been carried out by means of scanning transmission electron microscopy with electron energy loss spectroscopy analysis, (S)TEM-EELS. Quantitative EELS was applied to assess the local composition of the nanoparticles by evaluating the local Mn oxidation state based on the Mn L₃/L₂ peak intensity ratio and the Mn L₃ peak onset. The analysis allows to unambiguously distinguish the core from the shell and to determine the nature of the involved manganese oxides in both cases. The results evidence that the structure of the nanoparticles is, in fact, more complex than the one designed by the synthesis parameters.     

Structure, electrical and optical properties of TiNx films by atmospheric pressure chemical vapor deposition

Titanium nitride (TiN_x) films with various nitride compositions (x) were prepared on glass substrates by atmospheric pressure chemical vapor deposition using TiCl₄ and NH₃ as precursors. The structural, compositional, electrical and optical properties of the films were studied and the results were discussed with respect to nitride composition. The results showed a linear relationship between the lattice constant and the nitride composition. Resistivity of the films was minimized near x = 1. All the TiN_x films exhibited a transmission band with a peak value of about 15% in the visible region (400-700 nm). As the wavelength increased to transition point (λ_T-R), the reflectance of the obtained films presented a sharp increase and then reached a high value of about 50% near 2000 nm. Moreover, the red-shift of transmission band and the transition wavelength (λ_T-R) with increasing the nitride composition were also discussed.     

Photoluminescence and transmittance of CdS1−xTex thin films

CdS_1?xTe_x thin films were prepared by first producing CdS:In thin films by the spray pyrolysis (SP) technique and then annealing the films in the presence of Te vapor in nitrogen atmosphere. X-ray diffraction (XRD) measurements showed that the films are polycrystalline with mixed (cubic and hexagonal) structure. Transmittance measurements were recorded at room temperature in the wavelength range 400–1100 nm. The first derivative of the absorbance – which was deduced from the transmittance – was calculated and used to find the values of the bandgap energy. The presence of two minima in the first derivative curves was interpreted by the presence of a mixed (hexagonal and cubic) phase in accordance with the XRD measurements. The photoluminescence was recorded at T=60 K and a deconvolution peak fit was performed for each spectrum. The dependence of the PL spectra on the tellurium content of the films is obvious through the number, position and amplitude of the peaks in the different bands.     

Effect of pump spectra and axial mode separation on the single longitudinal mode performance in end pumped solid-state lasers with semi-monolithic gain medium

We present a theoretical model to study the effect of the pump spectrum and axial mode separation on the single longitudinal mode operation of a laser with a homogeneously broadened semi-monolithic gain medium of short absorption depth. The characterizing parameter is the ratio of the pump power up to which single longitudinal mode is possible to the pump power at the lasing threshold and is denoted by r_max. A numerical study using a Gaussian-shaped pump spectrum reveals that, for a small value of the axial mode separation and for a crystal with short absorption depth at the pump wavelength, the value of r_max reduces significantly with increase in the FWHM of the pump spectrum and thereby results in degradation of the single longitudinal mode performance of the system. However, for large value of the axial mode separation, the SLM performance was found to be nearly independent of the variations in the spectral bandwidth of the pump beam, location of its peak emission wavelength and its polarization.     

Gas barrier properties of titanium oxynitride films deposited on polyethylene terephthalate substrates by reactive magnetron sputtering

Titanium oxynitride (TiN_xO_y) films were deposited on polyethylene terephthalate (PET) substrates by means of a reactive radio frequency (RF) magnetron sputtering system in which the power density and substrate bias were the varied parameters. Experimental results show that the deposited TiN_xO_y films exhibited an amorphous or a columnar structure with fine crystalline dependent on power density. The deposition rate increases significantly in conjunction as the power density increases from 2 W/cm² to 7 W/cm². The maximum deposition rate occurs, as the substrate bias is −40 V at a certain power densities chosen in this study. The film's roughness slightly decreases with increasing substrate bias. The TiN_xO_y films deposited at power densities above 4 W/cm² show a steady Ti:N:O ratio of about 1:1:0.8. The water vapor and oxygen transmission rates of the TiN_xO_y films reach values as low as 0.98 g/m²-day-atm and 0.60 cm³/m²-day-atm which are about 6 and 47 times lower than those of the uncoated PET substrate, respectively. These transmission rates are comparable to those of DLC, carbon-based and Al₂O₃ barrier films. Therefore, TiN_xO_y films are potential candidates to be used as a gas permeation barrier for PET substrate.     

Characterization of HfOxNy gate dielectrics using a hafnium oxide as target

Hafnium oxynitride (HfO_xN_y) gate dielectric has been deposited on Si (1 0 0) by means of radio frequency (rf) reactive sputtering using directly a HfO₂ target in N₂/Ar ambient. The thermal stability and microstructural characteristics for the HfO_xN_y films have been investigated. XPS results confirmed that nitrogen was successfully incorporated into the HfO₂ films. XRD analyses showed that the HfO_xN_y films remain amorphous after 800 °C annealing in N₂ ambient. Meanwhile the HfO_xN_y films can also effectively suppress oxygen diffusion during high temperature annealing and prevent interface layer from forming between HfO_xN_y films and Si substrates. AFM measurements demonstrated that surface roughness of the HfO_xN_y films increase slightly as compared to those pure HfO₂ films after post deposition annealing. By virtue of building reasonable model structure, the optical properties of the HfO_xN_y films have been discussed in detail.     

Investigation of nonlinear optical parameters of zinc based amorphous chalcogenide films

Third order nonlinear optical properties of amorphous Zn_x–S_y–Se_100−x−y chalcogenide films have been investigated using single beam transmission z-scan technique at 1064 nm of Nd:YAG laser. Measurement of optical properties of amorphous Zn_x–S_y–Se_100−x−y chalcogenide films prepared by thermal evaporation technique has been made. X-ray diffraction patterns of chalcogenide films confirm the amorphous nature. Optical band gap (E_g) has been estimated using Tauc's plot method from transmission spectra that is found to decrease with increase in content due to valence band broadening and band tailing the system. Nonlinear refractive index (n₂), nonlinear absorption coefficient (β) and third order nonlinear susceptibility (χ³) of chalcogenide films have been estimated. Self-focusing effect has been observed in closed aperture and reverse saturable absorption in open aperture scheme. Limiting threshold and dynamic range have been calculated from optical limiting studies. The increase in nonlinearity with increase in Zn content has been observed that is understood to be due to decrease in band gap on Zn doping. High nonlinearity makes these films a potential candidate for waveguides, fibers and two photon absorption in optical limiters.     

Growth and Characterization of CdSe1 − y S y Nanofilms Obtained by Chemical Bath Deposition

In this work, the growth and characterization of cadmium selenide sulphur (CdSe_1???y S _y ) deposited by chemical bath deposition (CBD) technique at the reservoir temperature of 20?±?2 °C are presented, varying the thiourea volume added to the growth solution in the range of 0–30 ml. The films chemical stoichiometry was determined by energy-dispersive X-ray spectroscopy (EDS). The X-ray diffraction (XRD) analysis and Raman scattering reveal that CdSe_1???y S _y -deposited films showed hexagonal wurtzite crystalline phase. The average size of the crystalline grain in relation to the sulphur volume varies in the range of 1.48–9.2 nm that was determined by using the Debye-Scherrer equation for the direction (100), which is confirmed by analyzing the grain average diameter by high-resolution transmission electron microscopy (HRTEM). Raman scattering shows that the lattice dynamics is characteristic of bimodal behaviour and the multipeak adjust of the first optical longitudinal mode for the CdSeS denotes, in all cases, the Raman shift of the characteristic peak in the range of 177–181 cm^?1 of the CdSe crystals associated with the sulphur incorporation. CdSe_1???y S _y band gap energy can be varied from 1.86 to 2.11 eV by varying the thiourea volume added in the growth solution measured by transmittance at room temperature.     

Scattering wave vector dependence of Raman intensity of the v1 internal mode in KH2PO4

The v₁ internal breathing mode of PO₄ tetrahedrons in KH₂PO₄ is observed with the (yx) Raman spectra. It has been found that its intensity depends upon the direction of the scattering wave vector by means of the observations with the z-Δx(yx)y and x-Δz(yx)y scattering geometries. While this mode is very weak in intensity in the x(yx)y spectrum, it becomes very strong as the scattering geometry approaches the z(yx)y one.     

The length and the relative length of tangent vectors of finsler spaces

We consider the length of a vector in a Finsler space with the fundamental function L(x,y). The length of a vector X is usually defined as the value L(x,X) of L. On the other hand, we have an essential tensor g_ij(x,y), called the fundamental tensor, and the concept of relative length |X_y| of X may be introduced by |X|_y^y = g_ij(x,y)XⁱX^j with re spect to a supporting element y. The question arises whether is L(x,X) the minimum of |X|_y or not? If there exists a supporting element y satisfying |X|_y < L(x,X), then a curve x(t) in the Finsler space will be measured shorter than the usual length, by integrating |dx/dt|_y with the field of such supporting element y(t) along the curve.     

Epitaxial growth of titanium oxycarbide on MgO (0 0 1) substrates by pulsed laser deposition

Epitaxial TiC_xO_y thin films were grown on MgO (0 0 1) substrates by using pulsed laser deposition method. High-resolution X-ray diffraction and transmission electron microscopy were used to examine crystallinity and microstructure of epitaxial TiC_xO_y film on MgO. The chemical composition of the film is determined to be x ∼ 0.47 and y ∼ 0.69 by X-ray photoelectron spectroscopy. Atomic force microscopy revealed that the surface of TiC_xO_y film is very smooth with roughness of 0.18 nm. The resistivity of the TiC_xO_y film measured by four-point-probe method was about 137 μ Ω cm.     

An inelastic electron tunneling study of the insulator formed on aluminum in a low pressure discharge containing SO2

Vacuum deposited films of aluminum were exposed to a 400 V AC discharge plasma initially composed of SO₂ and of either oxygen or water gas. ¹⁸O substituted water and SO₂ were also used. The surfaces thus formed were studied by tunneling spectroscopy. From the observed peak positions and isotopic shifts it appears that, when SO₂ is initially about half of the discharge gas, the principal species present in the insulating layer is AlS_xO_y, where x and y are of the order of 3 and 7, respectively. A thin layer of AlO_z probably underlies the SO containing film. Initial concentrations of SO₂ in excess of about 60% gave barriers having low reproducibility and showing large charge-trapping effects. The tunneling spectrum of the sulphate ion, doped from water solution, is also reported.     

Spectromicroscopic investigation of (NH4)2S treated polycrystalline Cu(In1−xGax)Se2

Device-grade polycrystalline thin-film Cu(In_1−xGa_x)Se₂ was treated with (NH₄)₂S at 60°C to determine the resulting microscopic surface composition/morphology. Scanning electron microscopy was used to evaluate the resultant macroscopic surface morphology. Modification of the surface and grain boundary chemistry of the Cu(In_1−xGa_x)Se₂ polycrystalline films was investigated with scanning photoemission spectromicroscopy. The submicrometer lateral resolution of this technique allows us to directly characterize not only the surface chemistry of the treated films on the submicron scale, but also to probe the grain boundary chemistry. Chemical maps depicting the distribution of chemical species on the surface and at grain boundaries were obtained by monitoring the S 2p, Se 3d, In 4d/Ga 3d and Cu 3d (valence band) photoelectrons while scanning the sample. Background maps were also acquired of each of the peak energies to separate chemical contrast from topographic contrast. Results show that S has been incorporated at the surface, possibly creating a wider bandgap Cu(In_1−xGa_x)(Se_1−yS_y)₂ surface layer, and along the grain boundaries. The purpose of this investigation is to find an environmentally safe replacement for the toxic CdS overlayer commonly used for heterojunction devices without sacrificing overall device performance and reliability.     

Structural, optical properties and band gap alignments of ZrOxNy thin films on Si (1 0 0) by radio frequency sputtering at different deposition temperatures

ZrO_xN_y thin films have been prepared by radio frequency magnetron sputtering at various substrate temperatures. The effect of substrate temperature on structural, optical properties and energy-band alignments of as-deposited ZrO_xN_y thin films are investigated. Atomic force microscopy results indicate the decreased root-mean-square (rms) values with substrate temperature. Fourier transform infrared spectroscopy spectra indicate that an interfacial layer has been formed between Si substrate and ZrO_xN_y thin films during deposition. X-ray photoelectron spectroscopy and spectroscopy ellipsometry (SE) results indicate the increased nitrogen incorporation in ZrO_xN_y thin films and therefore, the decreased optical band gap (E_g) values as a result of the increased valence-band maximum and lowered conduction-band minimum.     

Six-prong events produced in 5 GeV/cπ−p interactions

Results are presented from a study of 3184 six-prong π^?p interactions at 5 GeV/c in the Dubna 1 m hydrogen bubble chamber. Cross sections for the various reaction channels are given and their energy dependence is discussed. The emphasis of this paper is on exhibiting the semi-inclusive particle spectra is sufficient detail so that it will be possible to use it for testing models and developing new concepts. In particular, invariant distributions are plotted against the scaled longitudinal momentum x, the rapidity y and the longitudinal momentum p_L in the lab system. The net charge per x as well as y interval is also presented. It is found that the isotropic pion component is inconsistent with the Bose-Einstein formula. Comparison with data at other energies is made whenever possible.