Long-wavelength optical phonons in the ZnTe/Zn<Subscript>0.8</Subscript>Cd<Subscript>0.2</Subscript>Te superlattice

The lattice IR reflection spectra of a ZnTe/Zn_0.8Cd_0.2Te superlattice measured at temperatures of 300 and 10 K are analyzed. The ZnTe/Zn_0.8Cd_0.2Te superlattice is grown by molecular-beam epitaxy on a GaAs substrate with a ZnTe buffer layer. It is found that the lattice IR reflection spectra of the studied structure exhibit only one reflection band. Dispersion analysis of the experimental spectrum has revealed the presence of one lattice TO mode close in frequency to the mode of pure ZnTe. This result is explained by a shift in the frequency of the lattice modes of the ZnTe and Zn_0.8Cd_0.2Te layers of the superlattice toward each other. In turn, this shift is caused by internal elastic stresses in the superlattice due to a mismatch between the lattice parameters of the materials of these layers.     

A comparative study on Zn0.8Cd0.2O films deposited on different substrates

Highly (0 0 2)-oriented Zn_0.8Cd_0.2O crystal films were prepared on different substrates, namely, glass, Si(1 1 1) and α-Al₂O₃(0 0 1) wafers by the dc reactive magnetron sputtering technique. The Zn_0.8Cd_0.2O/α-Al₂O₃ film has the best crystal quality with a FWHM of (0 0 2) peak of 0.3700°, an average grain size of about 200 nm and a root-mean-square surface roughness of about 70 nm; yet the Zn_0.8Cd_0.2O/glass holds the worst crystal quality with a much larger FWHM of 0.6281°. SIMS depth profile shows that the Zn and O compositions change little along the film depth direction; the Cd incorporation also almost holds the line towards the top surface other than an accumulation at the interface between the film and the substrate. The Cd content in the film is nearly consistent with that in target.     

Structural,thermal and electrical properties of the semiconductor system Ag(1−x)CuxInSe2

This paper presents a study of bulk samples synthesized of the Ag_1−xCu_xInSe₂ semiconductor system. Structural, thermal and electrical properties, as a function of the nominal composition (Cu content) x=0.0, 0.2, 0.4, 0.6, 0.8, and 1.0 were studied. The influence of x on parameters such as melting temperature, solid phase transition temperature, lattice parameters, bond lengths, crystallite size t (coherent domain), electrical resistivity, electrical mobility and majority carrier concentration was analyzed. The electrical parameters are analyzed at room temperature. In general, it is observed that the properties of the Ag_1−xCu_xInSe₂ system for x≤0.4 are dominated by n-AgInSe₂, while for x>0.4, these are in the domain of p-CuInSe₂. The crystallite size t in the whole composition range (x) is of the order of the nanoparticles. Secondary phases (CuSe, Ag₂Se and InSe) in small proportion were identified by XRD and DTA.     

Alloying effects on Kβ/Kα intensity ratios and electrical properties in Cd1−xZnxS semi-conductor alloys

The alloying effect on K_β/K_α intensity ratio in Cd_1−xZn_xS semi-conductor alloys and on structural, electrical and optical properties of these alloys were investigated. The sample was excited by gamma rays with energy 59.5 keV photons from an Am-241 radioisotope source. K X-rays emitted by the sample were counted with a Si(Li) detector. We found that the K_β/K_α intensity ratio is changed by the alloying effect in Cd_1−xZn_xS semi-conductor alloys for different compositions x. We compared our results with the theoretical values.     

Fabrication and characterization of p-ZnO/n-Zn0.8Cd0.2O/n-ZnO heterojunction

We report the fabrication of p-ZnO/n- Zn_0.8Cd_0.2O/n-ZnO heterojunctions that contain Al–N codoped p-ZnO, undoped n- Zn_0.8Cd_0.2O, and Al-doped n-ZnO layers. An InZn alloy is used as the p- and n-ZnO Ohmic contact electrodes. This structure exhibits improved rectifying p–n junction behavior, with forward turn-on voltage in the range of 3–5 V. The reverse breakdown voltage can be as high as 15 V, with 10^?6-A reverse leakage current. Photoluminescence spectra show strong near band-edge emissions for both p- and n-ZnO at 368 nm and for undoped n- Zn_0.8Cd_0.2O, which is substantially red-shifted to 399 nm.     

Maxwell-Wagner characterization of dielectric relaxation in Ni0.8Zn0.2Fe2O4/Sr0.5Ba0.5Nb2O6 composite

Dense composites were prepared through incorporating the dispersed Ni_0.8Zn_0.2Fe₂O₄ ferromagnetic particles into Sr_0.5Ba_0.5Nb₂O₆ ferroelectric matrix. Extrinsic dielectric relaxation and associated high permittivities of the materials are reported in the composites. We used an ideal equivalent circuit to explain electrical responses in impedance formalism. A Debye-like relaxation in the permittivity formalism was also found. Interestingly, real permittivity (ε′) of the sample containing 30% Ni_0.8Zn_0.2Fe₂O₄ shows obvious independence of the temperature at 100 kHz. Dielectric relaxation and high-ε′ properties of the composites are explained in terms of the Maxwell-Wagner (MW) polarization model.     

ESR of Cu2+ in the high pressure form of Cd3(PO4)2

ESR spectra of polycrystalline Cu²⁺ doped samples of the high pressure phase of Cd₃(PO₄)₂ were characteristic of the existence of two different paramagnetic centres. The spin—Hamiltonian constants of both defects were determined. Only two of the three possible substitutional cation sites are occupied by copper ions.     

CdSe/CdMnSe多量子阱的激子光学性质的研究

用分子束外延在GaAs衬底上生长了CdSe/CdMnSe多量子阱结构.利用X射线衍射(XRD)、变密度激发的PL光谱、变温度PL光谱和变密度激发的ps时间分辨光谱研究了CdSe/CdMnSe多量子阱结构和激子复合特性.讨论了随温度升高辐射线宽展宽和辐射复合效率降低的机理.发现不同激发密度下发光衰减时间不同,认为它的机理可能是无辐射复合引起的.在该材料中观测到激子激子散射发射峰,它被变密度激发和变温度PL光谱所证实. 关键词： CdSe/CdMnSe 量子阱 光学性质     

Enhanced room temperature ferromagnetism and photoluminescence behavior of Cu-doped ZnO co-doped with Mn

Cu, Mn co-doped ZnO nanoparticles were successfully synthesized by the sol–gel technique. XRD pattern described that Mn-doping did not affect the hexagonal wurtzite structure of the samples and no secondary phases were found. The reduced crystallite size at Mn=2% is due to the suppression of grain surface growth by foreign impurity. The enhancement of crystal size after Mn=2% is due to the expansion of lattice volume produced by the distortion around the dopant ion. The better dielectric constant and conductivity noticed at Mn=2% are explained by charge carrier density and crystallite size. The suppression of broad UV band by Mn-doping is discussed based on the generation of non-radiative recombination centers. Hysteresis loop showed the clear room temperature ferromagnetism in all the samples and the magnetization increased with Mn-doping. Better electrical and magnetic behavior of Zn_0.94Cu_0.04Mn_0.02O sample is suggested for effective opto-magnetic devices.     

Fracture mechanisms of Hg0.8Cd0.2Te induced by pulsed TEA-CO2 laser

The fracture mechanisms of Hg_0.8Cd_0.2Te induced by pulsed TEA-CO₂ laser have been investigated theoretically and experimentally in this paper. The Hg_0.8Cd_0.2Te target was irradiated by a TEA-CO₂ laser with wavelength of 10.6 μm and spike width of 240 ns in an ambient atmosphere. The evident cracks can be found on the surface of the target from the scanning electron microscopy (SEM) photos, indicating that the severe breaks happened during the experiment. Theoretical analysis has also been carried out and the results show that the fracture of Hg_0.8Cd_0.2Te is mainly induced by thermal stresses, although there are three forces (thermal stress, evaporation wave and laser-supported detonation (LSD) wave) exerted on the target surface during the process.     

Structural,electrical transport,and magnetic properties of Ni1−xZnxFe2O4

Structural, electrical, and magnetic properties of Ni_1−xZn_xFe₂O₄ (x=0.2, 0.4) samples sintered at various temperatures have been investigated thoroughly. The bulk density of the Ni_0.8Zn_0.2Fe₂O₄ samples increases as the sintering temperature (T_s) increases from 1200 to 1300 °C and above 1300 °C the bulk density decreases slightly. The Ni_0.6Zn_0.4Fe₂O₄ samples show similar behavior of changes to that of Ni_0.8Zn_0.2Fe₂O₄ samples, except that the bulk density is found to be the highest at 1350 °C. The DC electrical resistivity, ρ(T)$\rho (T)$, decreases as the temperature increases indicating that the samples have semiconductor-like behavior. As the Zn content increases, the Curie temperature (T_c), resistivity, and the activation energy decrease while the magnetization, initial permeability, and the relative quality factor (Q) increases. A Hopkinson peak is obtained near T_c in the real part of the initial permeability vs. temperature curves. The ferrite with higher permeability has a relatively lower resonance frequency. The initial permeability and magnetization of the samples has been found to correlate with density, average grain sizes. Possible explanation for the observed structural, magnetic, and changes of resistivity behavior with various Zn content are discussed.     

Cd0.9Zn0.1Te晶体的Cd气氛扩散热处理研究

将生长得到的Cd_0.9Zn_0.1Te晶体在Cd气氛下及不同的温度条件下进行了退火处理. 借助已建立的退火处理过程中Cd_1-xZn_xTe晶体材料电阻率及导电类型变化和扩散杂质的扩散系数之间关系的模型，结合实验数据，获得了1073K，973K和873K下Cd在Cd_0.9Zn_0.1Te晶体中的扩散系数，并估算了其激活能. 通过使用获得的扩散系数，研究了在不同温度及饱和Cd气氛下，退火时间对Cd_0.9Zn_0.1Te晶体电阻率分布及导电类型等的变化的影响.     

Effect of Cd content on the structural characteristic and some physical properties of Zn1−x Cd x Se

The present work focuses on the structural, optical, and electrical properties of Zn_1?x Cd _x Se (0.1≤x≤0.25) compounds. The compounds were synthesized by solid state reaction. X-ray diffraction (XRD) patterns confirm that the samples have cubic single phase (zinc-blende) crystal structure with space group F-43m. The crystal structural parameters were refined by the Rietveld method using the FullProf program. It was found that the lattice parameters increase linearly with increasing the Cd content and obeys Vegard’s law. The refined values of the crystallite size and the bond lengths increase with increasing the Cd content. The energy band gap of the samples has been calculated and it was found that it decreased as Cd increased. The conductivity of the samples increases with increasing both of composition parameter x and temperature, and showing semiconducting behavior.     

The thermoelectric efficiency of CdSb and solid solutions of Zn x Cd1−x Sb with hole conductivity

Based on the study of transport effects in CdSb single crystals and solid solutions of ZnSb-CdSb with hole conductivity, an analysis of the thermoelectric conversion efficiency is made. The parameters, experimentally determined over a wide temperature range, are compared to the transport coefficients of a highly doped CdSb and solid solution of Zn_0.2Cd_0.8Sb.     

Optical investigations of ZnxCd1-xS nanostructures

Zn_xCd_1-xS nanostructures with (x = 0, 0.25, 0.5, 0.75, 1) have been grown on glass substrates using spray pyrolysis technique. X-ray diffraction results have showed that Zn_xCd_1-xS nanostructures were formed with hexagonal and cubic structures. The structural parameters have been evaluated as a function of concentration (x). Also, the optical properties that depend on the mole fraction (x) are investigated for Zn_xCd_1-xS nanostructures.     

Preparation and magnetic properties of BaFe12O19/Ni0.8Zn0.2Fe2O4 nanocomposite ferrite

Nanocomposite of hard (BaFe₁₂O₁₉)/soft ferrite (Ni_0.8Zn_0.2Fe₂O₄) have been prepared by the sol–gel process. The nanocomposite ferrite are formed when the calcining temperature is above 800 °C. It is found that the magnetic properties strongly depend on the presintering treatment and calcining temperature. The “bee waist” type hysteresis loops for samples disappear when the presintering temperature is 400 °C and the calcination temperature reaches 1100 °C owing to the exchange-coupling interaction. The remanence of BaFe₁₂O₁₉/Ni_0.8Zn_0.2Fe₂O₄ nanocomposite ferrite with the mass ratio of 5:1 is higher than a single phase ferrite. The specific saturation magnetization, remanence magnetization and coercivity are 63 emu/g, 36 emu/g and 2750 G, respectively. The exchange-coupling interaction in the BaFe₁₂O₁₉/Ni_0.8Zn_0.2Fe₂O₄ nanocomposite ferrite is discussed.     

Microstructure,optical and structural characterization of Cd0.98Fe0.02S thin films co-doped with Zn by chemical bath deposition method

Fe-doped CdS (Cd_0.98Fe_0.02S) and Fe, Zn co-doped CdS (Cd_0.98−xZn_xFe_0.02S (x=0.02, 0.04, and 0.06)) thin films have been successfully deposited on glass substrate by chemical bath deposition technique using aqueous ammonia solution at pH = 9.5. Phase purity of the samples having cubic structure with (111) as the preferential orientation was confirmed by X-ray diffraction technique. Shift of X-ray diffraction peak position towards higher angle side and decrease of lattice parameters, volume and crystallite size confirmed the proper incorporation of Zn into Cd–Fe–S except Zn=6%. The compositional analysis (EDX) showed that Cd, Fe, Zn and S are present in the films. The enhanced band gap and higher transmittance observed in Cd_0.94Zn_0.04Fe_0.02S films are the effective way to use solar energy and enhance its photocatalytic activity under visible light. The enhanced green band emission than blue band by Zn-doping evidenced the existence of higher defect states.     

Effects of sintering temperature on grain growth and the complex permeability of Co0.2Ni0.3Zn0.5Fe2O4 material prepared using mechanically alloyed nanoparticles

Nanoparticle-sized Co_0.2Ni_0.3Zn_0.5Fe₂O₄ was prepared using mechanical alloying and sintering. The starting raw materials were milled in air and subsequently sintered at various temperatures from 600 to 1300 °C. The effects of sintering temperature on physical, magnetic and electrical characteristics were studied. The complex permittivity and permeability were investigated in the frequency range 10 MHz to 1.0 GHz. The results show that single phase Co_0.2Ni_0.3Zn_0.5Fe₂O₄ could not be formed during milling alone and therefore requires sintering. The crystallization of the ferrite sample increases with increasing sintering temperature; which decrease the porosity and increase the density, crystallite size and the shrinkage of the material. The maximum magnetization value of 83.1 emu/g was obtained for a sample sintered at 1200 °C, while both the retentivity and the coercivity decrease with increasing the sintering temperature. The permeability values vary with both the sintering temperature and the frequency and the absolute value of the permeability decreased after the natural resonance frequency. The real part of the permittivity was constant within the measured frequency, while the loss tangent values decreased gradually with increasing frequency.     

Mn3Zn0.8Ni0.2N的高压同步辐射研究

 利用金刚石对顶压砧,对钙钛矿型金属锰化物Mn₃Zn_0.8Ni_0.2N进行了原位高压同步辐射角散X射线衍射研究。研究表明,在0~29.9 GPa的压力区间内,样品没有发生结构相变,因而在该压力下样品的物性变化并非由结构相变所导致。卸压以后,样品的特征峰都回到了初始位置。通过Birch-Murnaghan方程,拟合得到了样品的体弹模量为86.5 GPa。     

Sputter cleaning and dry oxidation of CdTe,HgTe, and Hg0.8Cd0.2Te surfaces

The analyses of CdTe, HgTe, and Hg_0.8Cd_0.2Te surfaces by XPS and LEED after Ar⁺ sputtering and after the subsequent onset of a dry oxidation are described, and a quantitative evaluation of the XPS spectra is attempted. The results are: Ar⁺ sputtering yields a perfect unreconstructed CdTe surface of stoichiometric composition, whereas the composition of sputtered HgTe and Hg_0.8Cd_0.2Te surfaces generally deviates from the stoichiometry of the respective compound. This deviation is a function of the energy of the Ar ions (1 to 15 keV) and is characterized by an increasing deficit in Hg as the ion energy is raised. The Hg deficit of sputtered Hg_0.8Cd_0.2Te surfaces is substitutionally compensated by an equivalent increase in Cd, and due to this substitution the resulting surfaces are sufficiently ordered to display a distinct LEED pattern. The oxidation of sputtered CdTe, HgTe, and Hg_0.8Cd_0.2Te surfaces in an O₂ atmosphere is an extremely slow process. Therefore, the surfaces to be oxidized were additionally exposed to UV radiation (low pressure mercury lamp), and due to UV generated ozone as an oxidizing agent ultrathin native oxide layers of up to 15 Å thickness were readily obtained. The predominant constituents of these native oxide layers on Hg_0.8Cd_0.2Te are concluded to be CdTeO₃ and TeO₂.