垂直腔面发射激光器湿法氧化工艺的实验研究

为实现对垂直腔面发射半导体激光器氧化孔径的精确控制,提高其光电特性,对湿法氧化工艺进行了实验研究.在不同的氧化温度下,对相同结构的垂直腔面发射半导体激光器模拟片进行湿法氧化.采用X射线能谱分析仪,对氧化后模拟片的氧化层按不同的氧化深度对其氧化生成物进行检测.依据氧化生成物中氧元素组分浓度的变化,对氧化过程进行了分析与讨论,推导出在一定的温度下,氧化速率随时间变化的一般规律.提出了在垂直腔面发射半导体激光器的湿法氧化工艺过程中,适当降低氧化温度,延长氧化时间,可减小氧化限制孔径的控制误差,提高氧化工艺的准确性与稳定性.     

垂直腔面发射激光器湿法氧化工艺的实验研究

在湿法氧化过程中采用一种自制的新型红外光源显微镜和CCD相机俯视成像系统监测被氧化晶圆片上氧化标记点颜色的变化,通过CCD相机得到的氧化标记点尺寸大小与实际氧化标记点尺寸大小的比例计算,由氧化标记点变化颜色的尺寸大小获得实际晶圆被氧化尺寸大小,反馈调节氧化工艺,保证控制垂直腔面发射激光器（VCSELs）的氧化孔径精度在±1 μm。根据氧化实验总结高Al组分含量对氧化孔形状影响、氧化速率随温度变化及氧化深度随时间变化规律,得到在炉温420℃、水浴温度90℃、氧化载气N₂流量200 mL/min的工艺条件下,氧化速率为0.31 μm/min,实现量产高速调制4×25 Gbit/s的850 nm VCSELs。室温条件下,各子单元器件工作电压为2.2 V,阈值电流为0.8 mA,斜效率为0.8 W/A。在6 mA工作电流下,光功率为4.6 mW。     

Transverse-mode selectivity in possible nitride vertical-cavity surface-emitting lasers

Excitation of various transverse modes in possible nitride vertical-cavity surface-emitting lasers (VCSELs) is investigated and compared using the effective frequency optical model. In the comparative analysis of laser mode selectivity, two distinctly different configurations of possible nitride VCSELs are considered: the traditional VCSEL design with both (n-side and p-side) ring contacts as well as the uniform-current-injection (UCI) VCSEL design. Our simulation reveals that, during the continuous-wave device operation at room temperature, a multi-mode operation dominated by higher-order transverse modes is typical for traditional nitride VCSEL configurations whereas a desirable single-mode (based on the fundamental LP₀₁ mode) operation turns out to be characteristic for the wide current range in UCI ones. The above different threshold device behaviours are an immediate consequence of essentially different current-spreading phenomena in both VCSEL designs, resulting in completely different not only gain profiles but also temperature distributions within the laser active regions of both VCSELs. Seemingly similar behaviour has been also reported in arsenide VCSELs but it is expected to be much more severe in the case of nitride ones as a result of much higher both electrical resistivities of p-type nitrides and their temperature derivatives of refractive indices.     

键合界面阻抗对VCSEL的电、热学特性的影响

采用一电阻层来表征键合界面处的阻抗.通过求泊松方程、电流密度方程、载流子扩散方程以及有源层结压降方程自洽解的方法，计算了VCSEL的电势分布，进而求解热传导方程，得到VCSEL的温度分布.详细分析了键合界面阻抗对晶片键合结构垂直腔面发射激光器内部的电势分布、温度分布以及有源层中的注入电流密度、载流子浓度、结压降和温度沿径向分布的影响.     

Analysis and optimization of coupling to external cavities in feedback experiments with vertical-cavity surface-emitting lasers

The feedback strength is a crucial parameter for feedback experiments using semiconductor lasers. In this article, the coupling efficiency of the field of vertical-cavity surface-emitting lasers (VCSELs) to external cavities containing one collimating lens has been analyzed in detail using ABCD-matrix methods. It is found that for a given set of parameters there are two distinct, experimentally realizable positions of the collimating lens which allow for optimal coupling, if the cavity length is sufficiently small. The predictions are verified in experiments using single-transverse-mode VCSELs. The obtained coupling efficiencies exceed 70%.     

Improved thermal property of strained InGaAlAs/AlGaAs quantum wells for 808-nm vertical cavity surface emitting lasers

The 808-nm vertical cavity surface emitting laser (VCSEL) with strained In_0.13Ga_0.75Al_0.12As/Al_0.3Ga_0.7As quantum wells is designed and fabricated. Compared with the VCSELs with Al_0.05Ga_0.95As/Al_0.3Ga_0.7As quantum wells, the VCSEL with strained In_0.13Ga_0.75Al_0.12As/Al_0.3Ga_0.7As quantum wells is demonstrated to possess higher power conversion efficiency (PCE) and better temperature stability. The maximum PCE of 43.8% for 10-μm VCSEL is achieved at an ambient temperature of 30 ℃. The size-dependent thermal characteristics are also analyzed by characterizing the spectral power and output power. It demonstrates that small oxide-aperture VCSELs are advantageous for temperature-stable performance.     

Coherent polarization stabilization in large-aperture rectangular post bottom-emitting vertical-cavity surface-emitting lasers

The output characteristics of large-aperture rectangular post bottom-emitting vertical-cavity surface-emitting lasers (VCSELs) were investigated. It was shown that the output power of the rectangle VCSELs can be up to 660 mW at a current of 5 A. Both H-polarization (horizontal) and V-polarization (vertical) demonstrated a coherent stabilization over the entire range of operation current, and coherent spectrum blue-shift of H-polarization light occurred with respect to V-polarization light at three different injected currents. The polarization states of output light were stabilized in the two orthogonal directions and H-polarization was the most principal polarization which was parallel to the longer side of the rectangular aperture. From the relationship between polarization ratio and aspect ratio of the oxidation confinement aperture (OCA), it was found that the highest polarization ratio (about 2:1) took place when the appropriate aspect ratio was 5:3, which meant better polarization stabilization in large-aperture VCSELs.     

Lasing on higher-azimuthal-order modes in vertical cavity surface emitting lasers at room temperature

We report a direct method to observe higher-azimuthal-order whispering-gallery-like modes in vertical cavity surface emitting lasers (VCSELs) at room temperature. Instead of introducing any defect mode, we show that suppression of lower-order cavity modes can be achieved by destroying vertical reflectors with a surface micro-structure. Perfect higher-order modes with an azimuthal number as large as 41 are observed in experiments through collecting near-field radiation patterns, as well as in numerical simulations.     

HL-2A托卡马克超声分子束注入深度和加料效果研究

超声分子束注入深度与加料效率是分子束加料研究中的基本课题.在近期开展的超声分子束注入实验中，发现分子束注入深度与等离子体电子温度和密度、分子束源的气压和温度有直接关系，获得了分子束注入深度的定标律.在低温气体源(液氮冷却)的分子束注入实验中，发现分子束流中形成了团簇，其注入深度超过30 cm，分析了在低温气源分子束注入实验中的团簇现象. 关键词： 超声分子束注入 注入深度 加料效率 团簇     

Thermoreflectance imaging of laser diodes and VCSELs along and perpendicular to the emission direction

Thermal characterization of semiconductor lasers is an important issue for optoelectronics. This paper presents our thermoreflectance measurements on two different types of laser diodes: classical ridge laser diodes and vertical cavity surface emitting lasers (VCSELs). We first studied the external temperature increase in ridge diodes in order to determine inhomogeneity. Then, we tried to determine the inner temperature of the VCSELs.     

放电等离子烧结制备ZrB2-SiC超高温陶瓷的力学性能及氧化行为

在服役环境中,超高声速飞行器表面与空气剧烈摩擦导致温度极高。超高温陶瓷相较于一般陶瓷而言具有高熔点和良好的抗氧化烧蚀性能,是目前极具前景的热防护材料之一。采用放电等离子两步烧结工艺将ZrB2纳米粉末和SiC粉末在1700℃下制备超高温陶瓷材料ZrB2-20%SiC,通过纳米压痕微观实验、三点弯实验研究其力学性能及其在高温环境下的氧化行为,着重分析1000、1200、1400和1600℃4种不同氧化温度下ZrB2-20%SiC超高温陶瓷的氧化表面、氧化截面和氧化层厚度。结果表明:ZrB2-20%SiC超高温陶瓷的硬度为18 GPa,弹性模量为541 GPa,断裂韧性为5.7 MPa·m1/2;当氧化温度为1600℃时,超高温陶瓷内部的SiC由被动氧化转变为主动氧化,并且随着氧化温度升高,超高温陶瓷氧化层厚度与氧化温度呈正相关。     

光电耦合对InGaN/GaN量子阱光学性能的影响

围绕高性能GaN基垂直腔面发射激光器(VCSELs),设计了两种具有不同光电耦合强度的InGaN/GaN量子阱(QWs)样品,研究了它们的光学性质。样品A在腔模的两个波腹处各放置两个InGaN耦合量子阱,而样品B在腔模的一个波腹处放置5个InGaN耦合量子阱。计算表明样品A具有较大的相对光限制因子1.79,而样品B为1.47。光学测试发现样品A有着更高的内量子效率(IQE)和更高的辐射复合效率。使用两种样品制作了光泵VCSEL结构,在光激发下实现激射,其中基于样品A的VCSEL有着更低的激射阈值。结果表明有源区结构会显著影响量子阱与光场的耦合作用、外延片的内量子效率、辐射复合寿命和VCSEL激射阈值,同时也说明样品A的有源区结构更有利于制作低阈值的VCSEL器件。     

Comparison of growth stress measurements with modelling in thin iron oxide films

High temperature oxidation of metals leads to residual stresses both in the metal and in the growing oxide. In this work, the evolution of this residual stresses is theoretically predicted in the growing oxide layers. The origin of these stresses is based on a microstructural model. Using experimental results providing from the oxidation kinetics, and an analysis proposed to describe the growth strain occurring in the thin layers, a set of equations is established allowing determining the stresses evolution with oxidation time. Then, the model is compared with experimental results obtained on both α-Fe and phosphated α-Fe, oxidised at different temperatures. Numerical data are extracted from experiments either with an asymptotic formulation or with an inverse method. These two methods give good agreement with experiments and allow extracting the model parameters.     

High-power vertical-cavity surface-emitting lasers bonded with efficient packaging

<正>High-power vertical-cavity surface-emitting lasers(VCSELs) are processed using a wet thermal-selective oxidation technique.The VCSEL chips are packaged by employing three different bonding methods of silver solder,In-Sn solder,and metalized diamond heat spreader.After packaging,optical output power, wavelength shift,and thermal resistance of the devices are measured and compared in an experiment.The device packaged with a metalized diamond heat spreader shows the best operation characteristics among the three methods.The 200-μm-diameter device bonded with a metalized diamond heat spreader produces a continuous wave optical output power of 0.51 W and a corresponding power density of 1.6 kW/cm~2 at room temperature.The thermal resistance is as low as 10 K/W.The accelerated aging test is also carried out at high temperature under constant current mode.The device operates for more than 1000 h at 70℃,and the total degradation is only about 10%.     

光反馈诱发长波长垂直腔面发射激光器低功耗偏振开关

基于扩展的自旋反转模型,对光反馈诱发下长波长垂直腔面发射激光器中的低功耗偏振开关进行了理论研究.研究表明:长波长垂直腔面发射激光器在自由运行下未能获得的偏振开关现象,可以通过引入中等强度的偏振旋转光反馈来实现.对比强弱两种不同的线性色散效应,发现了一些有趣的现象:弱线性色散条件下更易于在低注入电流下获得偏振开关,并且产生偏振开关所需的反馈强度具有更大的调控范围;强色散效应中未能始终获得偏振开关,会出现两模共存区,并且偏振开关出现的注入电流值较高.同时,观察到的偏振模跳变和多偏振开关现象类似于短波长垂直腔面发射激光器,因而证实这两类激光器在偏振开关的本质规律上是相似的.此外,还对长波长垂直腔面发射激光器不易在低注入电流下获得偏振开关的原因进行了分析,并给出了合理的解释.     

Polarization-bistable vertical-cavity surface-emitting lasers: application for optical bit memory

We summarize recent results on polarization-bistable vertical-cavity surface-emitting lasers (VCSELs) and their application to optical buffer memory. All-optical flip-flop operation with very low switching energies and high repetition rates is achieved. An optical buffer memory consisting of a two-dimensional array of polarization-bistable VCSELs, in which the bit state of the optical signal, “0” or “1”, is stored as a lasing linear polarization state of 0 or 90°. Input data stored as the polarization states of the first VCSEL are transferred to the polarization states of the second VCSEL. In our experiments with 980 nm polarization-bistable VCSELs, 10 Gbit/s optical buffering, 2-bit optical buffering, and a shift register function have been successfully demonstrated.     

金属表面下氦泡融合与释放研究

采用分子动力学方法研究了钛金属表面下不同深度处氦泡的行为,分析了氦泡融合与释放的竞争,对比了不同深度处氦泡的释放对金属的影响。结果表明：在接近金属表面处,氦泡很难通过融合无限长大,当达到临界尺寸后,氦泡将会释放而不再与邻近的氦泡发生融合;植入深度对氦泡的融合有一定的影响,深度越大,越有利于形成具有较高氦密度的大氦泡;较深处氦泡的释放会在金属表面形成较大的突起和表面针孔。实验中观察到的不同尺寸的表面孔,其部分原因来自于金属表面下不同深度处氦泡的释放。     

金属表面下氦泡融合与释放研究

采用分子动力学方法研究了钛金属表面下不同深度处氦泡的行为,分析了氦泡融合与释放的竞争,对比了不同深度处氦泡的释放对金属的影响.结果表明:在接近金属表面处,氦泡很难通过融合无限长大,当达到临界尺寸后,氦泡将会释放而不再与邻近的氦泡发生融合;植入深度对氦泡的融合有一定的影响,深度越大,越有利于形成具有较高氦密度的大氦泡;较深处氦泡的释放会在金属表面形成较大的突起和表面针孔.实验中观察到的不同尺寸的表面孔,其部分原因来自于金属表面下不同深度处氦泡的释放.     

Stable single-mode operation of VCSELs with a mode selective aperture

We have developed single-mode vertical-cavity surface-emitting laser (VCSELs) with a mode selective aperture (MSA) in the DBR mirror that exhibits a high-order transverse-mode filtering effect. The VCSELs with an MSA were fabricated using standard intracavity-contacted VCSEL processes without any additional steps resulting from the simultaneous formation of the MSA and current aperture via a single-step oxidation. The VCSELs fabricated with a current aperture and MSA diameter of 5 and 7 μm, respectively, exhibited a stable single-mode operation with a side mode suppression ratio of over 35 dB and a divergence angle below 10° for the entire drive current range. PACS 42.55.Px; 85.35.Be     

激光波长对拉曼散射水温遥感系统测温精度及探测深度的影响

机载激光拉曼散射雷达技术可以快速获取次表层海水温度的三维分布,具有重要的实用价值和经济价值.首先,从理论上分析了水的伸缩振动拉曼谱峰值位置和半高全宽与激发波长之间的对应关系,发现随着激发波长的增大,拉曼峰逐渐向长波方向移动,且拉曼光谱半高全宽显著增大.然后,实验测量了不同温度下450 nm激光和532 nm激光激发的水的拉曼光谱,对比验证了上述理论分析结果.并采用单高斯峰拟合法分析了两组拉曼光谱,拟合出高斯峰峰值位置与温度之间的关系,分析了激发波长对温度测量精度的影响.研究发现,采用较长波长的激发光可以提高拉曼光谱的测量精度,从而改善测温精度.最后,建立了拉曼散射雷达方程,分析了拉曼散射系数与激光波长之间的关系,研究了激光波长对雷达系统探测深度的影响.结果表明,激光波长对雷达系统探测深度有很大的影响,采用480 nm以下波长的激光时雷达系统探测深度较大,而采用长波段激光时雷达系统探测深度会大幅降低.实际系统设计中选取激光光源时需要综合考虑上述两方面的影响.