Design of midwave infrared athermalization optical system with a large focal plane array

Based on the most advanced staring focal plane array which had a format of 640 × 480 and the pixel pitch of 15 μm, a set of all-sphere midwave infrared ahermalization optical system was designed. The working wavelength was in 3–5 μm, the full field of view was 8.58°, the relative aperture was 1/2, the efficient focal length (EFL) was 80 m. The opticalsystem consisted of four lenses with three kinds of material – Ge, ZnSe and Si. All surfaces were sphere, which was easier to process test, making the cost inexpensive, and it could avoid using diffractive surface and aspheric surface. The image quality of the system approaches the diffraction limit in the temperature range −60 °C-180 °C. The design results proved that, the high resolution midwave infrared optical system had compact structure, small volume, high resolution and excellent image quality, meeting the design requirements, so that it could be used for photoelectric detection and tracking system.     

The structure and optical properties of evaporated Samarium fluoride films

Samarium fluoride (SmF₃) films have been deposited on quartz, silicon and germanium substrates by vacuum evaporation method. The crystal structure of the films deposited on silicon substrate is examined by X-ray diffraction (XRD). The films deposited at 100 °C, 150 °C and 250 °C have the (1 1 1) preferred growth orientation, but the film deposited at 200 °C has (3 6 0) growth orientation. The surface morphology evolution of the films with different thickness is investigated with optical microscopy. It is shown that the microcrack density and orientation of thin film is different from that of thick film. The transmission spectrum of SmF₃ films is measured from 200 nm to 20 μm. It is found that this material has good transparency from deep violet to far infrared. The optical constants of SmF₃ films from 200 nm to 12 μm are calculated by fitting the transmission spectrum of the films using Lorentz oscillator model.     

Characterization of evaporated selenide semiconductor alloy on p-type substrates

The properties of chalcogenides that are most important for applications as infrared transmitting materials are reported and their mutual relationships are given. Si₅Se₈₀In₁₅ films were produced by means of thermal evaporation. The refractive index and the optical energy gap were determined by transmission measurements. Parameters considered in this study are density, molar volume, transition temperatures, electrical properties, infrared transmission, extinction coefficient and refractive index. This composition has no extrinsic and intrinsic absorption between 14 and 20 μm and the value of absorption coefficient is estimated lower than 10⁻³ cm⁻¹ at 10.6 μm. This glass is also suitable for infrared optical elements. A p-n junction is observed due to evaporated thin film of alloy on p-type Ge substrate.     

Heat-induced charge transfer in cobalt iron cyanide

The heating of Co(2+) ferricyanide above 80 °C induces an inner charge transfer from Co(2+) towards Fe(III) to form the mixed valence system Co(2+)Co(III) ferri- ferro-cyanide. This charge transfer takes place preserving the material framework and forming a solid solution of the initial and final species. The cell edge of the cubic cell (Fm-3m) of this solid solution follows a regular variation with the material composition. This mixed valence system was characterized using X-ray diffraction, infrared, thermo-gravimetric, Mössbauer and magnetic measurements. Its formation is easily detected by the appearance of an intermediate ν(CN) absorption band in the infrared spectra at around 2120 cm⁻¹, 40 cm⁻¹ below and above the observed frequency for this vibration in Co(2+) ferri- and ferro-cyanide, respectively.     

Effect of nanostructured AlN coatings on the oxidation-resistant properties of optical diamond films

Diamond film is an ultra-durable optical material with high thermal conductivity and good transmission in near-infrared and far-IR (8-14 μm) wavebands. CVD diamond is subjected to oxidation at temperature higher than 780 °C bared in air for 3 min, while it can be protected from oxidation for extended exposure in air at temperature up to 900 °C by a coating of aluminum nitride. Highly oriented AlN coatings were prepared for infrared windows on diamond films by reactive sputtering method and the average surface roughness (R_a) of the coatings was about 10 nm. The deposited films were characterized by X-ray diffraction (XRD) and atom force microscope (AFM). XRD confirmed the preferential orientation nature and AFM showed nanostructures. Optical properties of diamond films coated AlN thin film was investigated using infrared spectrum (IR) compared with that for as-grown diamond films.     

A grating-based optical readout method for microcantilever biosensor

For measuring the deflections of the microcantilever biosensor, a reflective grating microcantilevers based on SOI were designed and fabricated, a high precision optical readout approach based on diffraction spectrum balancing feedback control was presented. The diffraction spectrum image was collected by a 12-bit digital area array monochrome CCD. According to the sum gray value of the image which subtracted each other at the balancing position and bending position to control a high precision motorized rotation stage revolve make the sum gray value remained in the balancing position always, then the motorized rotation stage revolving angle is just the cantilever bend angle. The resolution of motorized rotation stage is 35 × 10⁻⁶ deg, the system practical measurement resolution is 1 × 10⁻⁴ deg, that is to say, for a length of 250 μm microcantilever, the tip measure resolution is up to 0.043 nm. Measurement results clearly demonstrate that this reflective grating microcantilever biosensor and this read out method have a great potential for biological and chemical applications.     

Quadrature fringes wide-field optical coherence tomography and its applications to biological tissues

We propose and demonstrate quadrature fringes wide-field optical coherence tomography (QF WF OCT) to expand an optical Hilbert transformation to two-dimensions. This OCT simultaneously measures two quadrature interference images using a single InGaAs CCD camera to obtain en face OCT images. The axial and lateral resolutions are measured at 29 μm in air and 70 μm limited by a pixel size of camera using a superluminescent diode with a wavelength of 1.3 μm as the light source; the system sensitivity is determined to be −90 dB. The area of the en face OCT images is 4.0 mm × 4.0 mm (160 × 160  pixels). The OCT images are measured axially with steps of 10 μm. The en face OCT images of a in vivo human fingertip and a in situ rat brain are three-dimensionally measured up to the depth of about 3 mm with some degradations of a lateral resolution.     

Temperature phase-matching properties of mixed chalcopyrite AgGa1−xInxS2 crystal

AgGa_1−xIn_xS₂ with x = 0.14 ± 0.01 was found to be 90° phase-matchable for the second harmonic generation (SHG) of CO₂ laser radiation at 10.591 μm at 203 °C. In addition, temperature-tuned 90° phase-matched difference frequency generation (DFG) at 4.02 μm was demonstrated by mixing the idler output of a Nd:YAG third harmonic pumped β-BBO optical parametric oscillator and its fundamental source at 1.0642 μm. The Sellmeier and thermo-optic dispersion formulas that reproduce well these experimental data are presented.     

The photodetector of Ge nanocrystals/Si for 1.55 μm operation deposited by pulsed laser deposition

The photodetector properties of a Ge nanocrystals detector fabricated by pulsed laser deposition and in situ rapid thermal annealing treatment at 600 °C have been studied. Strong optical absorption and photocurrent response of the detector are measured in the wavelength range 1.3-1.55 μm. The detector possesses a low dark current of 61.4 nA and a photocurrent responsivity of 56 mA/W at the reverse bias 5 V. The external quantum efficiency at 1.55 μm is estimated to be 15%. The stop wavelength of absorption spectra extends to 1.65 μm. It indicates that these kind of Ge nanocrystals devices can be used as a 1.3-1.55 μm near infrared detector.     

Surface morphology and optical properties of ZnO epilayers grown on Si(1 1 1) by metal organic chemical vapor deposition

Heteroepitaxial ZnO epilayers were grown on Si(1 1 1) substrates using a vertical geometry atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD) system. The growth temperature was varied from 550 °C to 650 °C in steps of 25 °C. The ZnO growth rate and surface morphology were strong functions of the growth temperature and ranged from ∼0.16 μm/h to 1.36 μm/h. The surface morphology of the ZnO films changed from granular to sharp tips as the growth temperature increased. The effect of buffer thickness was also examined, and was found to have a strong effect on the optical properties of the ZnO. An optimized growth condition for ZnO epilayers was found at 625 °C, producing a FWHM in the room temperature photoluminescence (PL) spectrum of 4.5 nm and a preferred growth orientation along the (0 0 2) direction.Transmission electron microscopy images and selected area diffraction patterns showed excellent crystalline quality of both the buffer and ZnO overlayer. When non-optimized growth temperatures were employed, post-growth annealing was found to greatly enhance the ratio of band-edge to deep level emission.     

Anatase type titania nanotube arrays direct fabricated by anodization without annealing

In this paper, anatase type titania nanotube arrays were direct fabricated by anodization in dimethyl sulfoxide electrolyte containing 1 wt% HF solution at above 50 °C without subsequently annealing. The length of the nanotubes decreases with increasing anodization temperature from about approximately 15 μm at 40 °C to approximately 4.5 μm at 60 °C. High resolution transmission electron microscope images and selected area electron diffraction pattern confirm the polycrystalline anatase specimen consisting of many nanocrystals with a random orientation.     

The structural and optical properties of ZnO nanorod arrays

High quality vertical-aligned ZnO nanorod arrays were synthesized by a simple vapor transport process on Si (111) substrate at a low temperature of 520 °C. Field-emission scanning electron microscopy (FESEM) showed the nanorods have a uniform length of about 1 μm with diameters of 40-120 nm. X-ray diffraction (XRD) analysis confirmed that the nanorods are c-axis orientated. Selected area electron diffraction (SAED) analysis demonstrated the individual nanorod is single crystal. Photoluminescence (PL) measurements were adopted to analyze the optical properties of the nanorods both a strong UV emission and a weak deep-level emission were observed. The optical properties of the samples were also tested after annealing in oxygen atmosphere under different temperatures, deep-level related emission was found disappeared at 600 °C. The dependence of the optical properties on the annealing temperatures was also discussed.     

Synthesis, characterization, growth mechanism, photoluminescence and field emission properties of novel dandelion-like gallium nitride

Dandelion-like gallium nitride (GaN) microstructures were successfully synthesized via Ni catalyst assisted chemical vapor deposition method at 1200 °C under NH₃ atmosphere by pre-treating precursors with aqueous ammonia. The as-synthesized product was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). X-ray diffraction analysis revealed that as-synthesized dandelion-like GaN was pure and has hexagonal wurtzite structure. SEM results showed that the size of the dandelion-like GaN structure was in the range of 30-60 μm. Dandelion-like GaN microstructures exhibited reasonable field emission properties with the turn-on field of 9.65 V μm⁻¹ (0.01 mA cm⁻²) and threshold field of 11.35 V μm⁻¹ (1 mA cm⁻²) which is sufficient for applications of electron emission devices, field emission displays and vacuum micro electronic devices. Optical properties were studied at room temperature by using fluorescence spectrophotometer. Photoluminescence (PL) measurements of dandelion-like GaN showed a strong near-band-edge emission at 370.2 nm (3.35 eV) with blue band emission at 450.4 nm (2.75 eV) and 465.2 nm (2.66 eV) but with out yellow band emission. The room-temperature photoluminescence properties showed that it has also potential application in light-emitting devices. The tentative growth mechanism for the growth of dandelion-like GaN was also described.     

High-power 3.8 μm tunable optical parametric oscillator based on PPMgO:CLN

The experimental results of a high-power 3.8 μm tunable laser are presented on a quasi-phase-matched single-resonated optical parametric oscillator in PPMgO:CLN pumped by a 1064 nm laser of an elliptical beam. Theoretical analyses of the PPMgO:CLN wavelength tuning are presented. The pump source was an acousto-optical Q-switched cw-diode-side-pumped Nd:YAG laser. The beam polarization matched the e-ee interaction in PPMgO:CLN. When the crystal was operated at 90 °C and the pump power was 150 W with a repetition rate of 10 kHz, average output power of 22.6 W at 3.86 μm and 63 W at 1.47 μm was obtained. The slope efficiency of the 3.86 μm laser with respect to the pump laser was 17.8%. The M² factors of the 3.86 μm laser were 1.74 and 4.86 in the parallel and perpendicular directions, respectively. The mid-IR wavelength tunability of 3.7-3.9 μm can be achieved by adjusting the temperature of a 29.2 μm period PPMgO:CLN crystal from 200 °C to 30 °C, which basically is accorded with the theoretic calculation.     

Pure UV photoluminescence from ZnO thin film by thermal retardation and using an amorphous SiO2 buffer layer

ZnO/SiO₂ thin films were fabricated on Si substrates by E-beam evaporation with thermal retardation. The as-prepared films were annealed for 2 h every 100 °C in the temperature range 400-800 °C under ambient air. The structural and optical properties were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL). The XRD analysis indicated that all ZnO thin films had a highly preferred orientation with the c-axis perpendicular to the substrate. From AFM images (AFM scan size is 1 μm×1 μm), the RMS roughnesses of the films were 3.82, 5.18, 3.65, 3.40 and 13.2 nm, respectively. PL measurements indicated that UV luminescence at only 374 nm was observed for all samples. The optical quality of the ZnO film was increased by thermal retardation and by using an amorphous SiO₂ buffer layer.     

Effect of the heat treatment on the infrared emissivity of indium tin oxide (ITO) films

Indium tin oxide (ITO) films were deposited on glass substrates at temperatures ranging from 100 °C to 400 °C by direct current magnetron sputtering. The mean infrared emissivities at the waveband of 8-14 μm were measured in process of heating and cooling between room temperature and 350 °C. Microstructure and phases of ITO films before (Group A) and after (Group B) heat treatment were characterized by SEM and XRD, respectively. Electrical properties were characterized with a four-point probe method and by Hall measurement system. During heat treatment, the infrared emissivity of the film increases with the increase of temperature, and decreases with the decrease of temperature. While, the infrared emissivity of the films decreases slightly around 250 °C in heating process. On the other hand, after heat treatment, the crystalline phases of the films have no obvious change. However, both the resistivity and the infrared emissivity of all films decrease.     

Continuous-tunable 4.144-4.851 μm twin-MgO:PPLN cascaded optical parametric generator pumped by a 1.342 μm Nd:GdVO4 laser

An all-solid-state mid-infrared optical parametric generator with wide tunability by using multi-grating periodically poled 5 mol.-% MgO-doped lithium niobate (MgO:PPLN) is reported. The pump source is a diode-pumped Q-switched Nd:GdVO₄ laser operated at 1.342 μm with pulse width of 150 ns and repetition rate of 50 kHz. To extend the interaction length, two identical multi-grating MgO:PPLN crystals have been cascaded in the OPG system. When the incident pump average power is 10 W, the obtained maximum idler output power is 340 mW at 4.144 μm. Compared with only using one multi-grating MgO:PPLN crystal, the obtained idler output power increases by 20.1%. 4.144-4.851 μm continuous-tunable idler output is obtained with six grating periods from 29 to 31.5 μm and temperature from 40 to 200 °C. To our knowledge, this is the first time to use 1.342 μm laser as the pump source of OPG.     

Effects of the substrate temperature on the properties of CuIn5S8 thin films

Structural, optical and electrical properties of CuIn₅S₈ thin films grown by thermal evaporation have been studied relating the effects of substrate heating conditions of these properties. The CuIn₅S₈ thin films were carried out at substrate temperatures in the temperature range 100-300 °C. The effects of heated substrate on their physico-chemical properties were investigated using X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), optical transmission and hot probe method. X-ray diffraction revealed that the films are strong preferred orientation along the (3 1 1) plane upon substrate temperature 200 °C and amorphous for the substrate temperatures below 200 °C. No secondary phases are observed for all the films. The composition is greatly affected by heated substrate. From the optical transmission and reflection, an important absorption coefficient exceeds 10⁵ cm⁻¹ at 800 nm was found. As increasing the substrate temperature, the optical energy band gap decreases from 1.70 eV for the unheated films to 1.25 eV for the deposited films at 300 °C. It was found that CuIn₅S₈ thin film is an n-type semiconductor at 250° C.     

The effect of surface nanocrystallization on plasma nitriding behaviour of AISI 4140 steel

A plastic deformation surface layer with nanocrystalline grains was produced on AISI 4140 steel by means of surface mechanical attrition treatment (SMAT). Plasma nitriding of SMAT and un-SMAT AISI 4140 steel was carried out by a low-frequency pulse excited plasma unit. A series of nitriding experiments has been conducted at temperatures ranging from 380 to 500 °C for 8 h in an NH₃ gas. The samples were characterized using X-ray diffraction, scanning electron microscopy, optical microscopy and Vickers microhardness tester. The results showed that a much thicker compound layer with higher hardness was obtained for the SMAT samples when compared with un-SMAT samples after nitriding at the low temperature. In particular, plasma nitriding SMAT AISI 4140 steel at 380 °C for 8 h can produced a compound layer of 2.5 μm thickness with very high hardness on the surface, which is similar to un-SMAT samples were plasma nitrided at approximately 430 °C within the same time.     

Room temperature synthesis of needle-shaped ZnO nanorods via sonochemical method

Single crystalline needle-shaped zinc oxide nanorods were synthesized via sonochemical methods using zinc acetate dihydrate and sodium hydroxide at room temperature. Morphological investigation revealed that the nanoneedles are of hexagonal surfaces along the length. The typical diameter and length vary from 120 to 160 nm and 3 to 5 μm, respectively. Sonication time appears to be a critical parameter for the shape determination. Detailed structural characterization confirmed that the nanorods are single crystalline with wurtzite hexagonal phase. A standard peak of zinc oxide was observed at 520 cm⁻¹ from the Fourier transform infrared spectroscopy. The ultra-violet visible and room temperature photoluminescence (PL) spectroscopic results demonstrate that the synthesized material has good optical properties.