Ultra high Q crystalline microcavities

We report on the fabrication technique of ultra high Q optical crystalline whispering gallery mode microresonators and discuss their properties. The technique is suitable for the majority of available optical crystals and for production of resonators with small size. To validate the method, we made CaF₂ resonators with Q factors exceeding 4 × 10⁸ and a diameter smaller than 100 μm. A single mode resonator has also been fabricated. Possible utilization of these new resonators in quantum optics is discussed.     

Generation of near-infrared frequency combs from a MgF₂ whispering gallery mode resonator

We report on generation of a 20 nm wide, 35 GHz repetition rate optical frequency comb in a magnesium fluoride whispering gallery mode resonator pumped with 2 mW of 1543 nm light. The high efficiency of comb generation is associated with the small anomalous group velocity dispersion of the resonator. Growth dynamics of the comb is studied and compared with earlier theoretical predictions.     

Yellow light generation by frequency doubling of a diode-pumped Nd:YAG laser

We demonstrate the generation of TEM₀₀ mode yellow light in critically type II phase-matched KTiOPO₄ (KTP) with intracavity frequency doubling of a diode-pumped Nd:YAG laser at room temperature. After a 150 μm thick etalon have been inserted into the cavity, the stability and beam quality of the second harmonic generation (SHG) is enhanced. A continuous wave (CW) TEM₀₀ mode output power of 1.67 W at 556 nm is obtained at a pump level of 16 W. The total optical to optical conversion efficiency is about 10.44%. To the best of our knowledge, this is the first Watt-level yellow light generation by frequency doubling of Nd:YAG laser.     

Anisotropy of magnetization-induced surface optical second harmonic generation from Co doped rutile TiO2

We have investigated the surface magnetization anisotropy of 5 at% Co doped rutile TiO₂ (1 1 0) using magnetization-induced optical second harmonic generation (MSHG) in the longitudinal Kerr configuration with an incident beam angle of 4°. The MSH intensity pattern from the Co:TiO₂ without surface Co clusters showed two anisotropic lobes at the second harmonic photon energy of 2?ω=3.13 eV. Since MSH intensity is proportional to surface magnetization, the result indicates an anisotropy of the surface magnetization of Co:rutile TiO₂ (1 1 0). This confirms the possibility that 5 at% Co:rutile TiO₂ (1 1 0) is a ferromagnetic dilute magnetic semiconductor at its surface, as proposed in our previous paper.     

Harmonic generation in ZnO nanocrystalline laser deposited thin films

ZnO plasma produced by third harmonic 355 nm of Nd:YAG laser at various ambient pressures of oxygen was used for depositing quality nanocrystalline ZnO thin films. Time and space resolved optical emission spectroscopy is used to correlate the plasma properties with that of deposited thin films. The deposited films showed particle size of 8 and 84 nm at ambient oxygen pressure of 100 and 900 mTorr, respectively. Third harmonic generation observed in ZnO thin films deposited under 100 mTorr of ambient oxygen is reported.     

Effects of post-thermal annealing temperature on the optical and structural properties of gold particles on silicon suboxide films

In this work, silicon suboxide (SiO_x) thin films were deposited using a RF magnetron sputtering system. A thin layer of gold (Au) with a thickness of about 10 nm was sputtered onto the surface of the deposited SiO_x films prior to the thermal annealing process at 400 °C, 600 °C, 800 °C and 1000 °C. The optical and structural properties of the samples were studied using scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray diffractometry (XRD), Fourier transform infrared spectroscopy (FTIR) and optical transmission and reflection spectroscopy. SEM analyses demonstrated that the samples annealed at different temperatures produced different Au particle sizes and shapes. SiO_x nanowires were found in the sample annealed at 1000 °C. Au particles induce the crystallinity of SiO_x thin films in the post-thermal annealing process at different temperatures. These annealed samples produced silicon nanocrystallites with sizes of less than 4 nm, and the Au nanocrystallite sizes were in the range of 7-23 nm. With increased annealing temperature, the bond angle of the Si-O bond increased and the optical energy gap of the thin films decreased. The appearance of broad surface plasmon resonance absorption peaks in the region of 590-740 nm was observed due to the inclusion of Au particles in the samples. The results show that the position and intensity of the surface plasmon resonance peaks can be greatly influenced by the size, shape and distribution of Au particles.     

Laser induced effects in PbO-Bi2O3-Ga2O3-BaO: Eu glasses

We have observed a several times enhancement of the optical second harmonic generation in newly synthesized Europium doped PbO-Bi₂O₃-Ga₂O₃-BaO glasses for the fundamental wavelength 1320 nm during optical treatment by coherent fundamental and doubled frequency beams with a pulse duration about 15 ns. We have found that the maximal optical second harmonic generation was achieved for the Eu content of about 1.4% at fundamental beam average power equal to about 3 GW/cm² , temperature of about 300 K and intensity ratio between the fundamental and doubled frequency beams of about 9. Frequency repetition of the optical pulses was equal to about 10 Hz. It was shown that doping by other rare earth ions, particularly by Dysprosium does not give a sufficient contribution to the effect.     

Magnetic, electric, and optical functionalities of (PLZT)x(BiFeO3)1−x ferroelectric-ferromagnetic thin films

We have prepared a series of (PLZT)_x(BiFeO₃)_1−x transparent thin films with thickness of 300 nm by a thermal pyrolysis method. Only films with x≦0.10 formed a single phase of perovskite structure. The film where x=0.10 exhibited both ferromagnetic and ferroelectric properties at room temperature with spontaneous magnetization and coercive magnetic fields of 0.0027μ_B and 5500 G, respectively. The remanent electric polarization and coercive electric field for the film where x=0.10 were 3.0 μC/cm² and 24 kV/cm, respectively. Additionally, films with 0.02≦x≦0.10 showed both magneto-optical effects and the second harmonic generation of transmitted light.     

Laser diode pumped actively Q-switched Nd:GdVO4 self-Raman laser operating at 1173 nm

A laser diode pumped actively Q-switched Nd:GdVO₄ self-Raman laser operating at 1173 nm is presented. The maximum output power was 2.26 W at an incident pump power of 18 W, with the corresponding optical conversion efficiency of 12.6%. Two different resonator configurations were investigated in order to achieve high output power and efficiency.     

Photorefractive tuning of whispering gallery modes of a spherical resonator integrated inside a microstructured optical fibre

We demonstrate the photorefractive tuning of the whispering gallery modes of a single BaTiO₃ microsphere resonator integrated inside a grapefruit-shaped microstructured optical fibre, upon CW laser irradiation at 532 nm while using irradiation intensities up to 5.5 W/cm². Temporal evolution results of the WGM spectra are provided with respect to the illumination and relaxation conditions applied.     

Laser nonlinear-optical probing of silicon/SiO2 interfaces: Surface stress formation and relaxation

A nonlinear optical technique based on optical second harmonic generation in reflection is shown to provide information on the surface layer structure of semiconductor crystals, thin films and layered systems. The second harmonic intensity is sensitive to inhomogeneous stress in centrosymmetric materials via spatial selection rules and the appearance of an electric dipole contribution to the second order nonlinear optical susceptibility. The technique is used to monitor mechanical stress relaxation in the SiO₂/Si interface during several annealing procedures.     

Surface acoustic wave opto-mechanical oscillator and frequency comb generator

We report on realization of an efficient triply resonant coupling between two long lived optical modes and a high frequency surface acoustic wave (SAW) mode of the same monolithic crystalline whispering gallery mode resonator. The coupling results in an opto-mechanical oscillation and generation of a monochromatic SAW. A strong nonlinear interaction of this mechanical mode with other equidistant SAW modes leads to mechanical hyperparametric oscillation and generation of a SAW pulse train and associated frequency comb in the resonator. We visualized the comb by observing the modulation of the light escaping the resonator.     

An extremely narrow UV pulse generation using a micro- and nano-ring system for pico-lithographic resolution

We propose a new technique of an extremely narrow ultraviolet (UV) pulse width generation for pico-lithography technology using a nonlinear ring resonator system. A system consists of three micro- and a nano-optical ring resonators, which can be used to generate the 50 pm (10⁻¹² m) optical spectral width at the ultraviolet wavelength. By using a soliton pulse with a pulse width of 50 ns, 1 W peak power, center wavelength at 1550 nm, after the soliton pulse is launched into a first ring device, the chaotic pulses are generated within the first ring. The chaotic filtering behaviors are performed by using the second and third ring devices, whereas the extremely short pulse, i.e. narrow spectral width, can be generated by using the extended nano-ring device. The broad spectrum of the harmonic waves is generated and filtered, especially the generation of third harmonic wave, which is known as the ultraviolet wavelength, is achieved, which is capable of forming pico-lithographic resolution. Results obtained have shown that the generation of the spectral width of 50 pm at a wavelength of 511.125 nm, with peak power at 35 mW is achieved.     

Broadband second harmonic generation in a tapered isotropic semiconductor slab using total internal reflection quasi phase matching

This paper analytically describes the concept of enhancing the bandwidth of second-harmonic generation in the mid-infrared region in an isotropic tapered semiconductor slab configuration. In this slab geometry, the lengths between successive reflection points due to total internal reflection of the incident laser radiation increase when it propagates through the slab. A computer aided simulation has been carried out to determine the possibility of generating broadband second harmonic intensity for broadband fundamental laser radiations as they are allowed to undergo total internal reflection inside the tapered isotropic semiconductor crystal slab made of either gallium arsenide (GaAs) or zinc selenide (ZnSe). The simulated results indicate wide 3 dB bandwidths of 187 nm and 196 nm in a 30 mm long tapered slab of GaAs and ZnSe respectively. The conversion efficiency, after considering the absorption and reflection losses, is quite satisfactory (≈ 1%). The effects of variations in temperature, incident angle of the fundamental laser radiations at the air-slab interface, length and tapering angle of the semiconductor slab have been studied for generated second harmonic radiations in both GaAs and ZnSe crystals. Optimising these parameters a wider broadband frequency converter with appreciable conversion efficiency can be designed.     

Organic thin films based on a dicyanovinyl-quaterthiophene: Influence of electrode configuration on third-order nonlinear optical properties measured by electroabsorption spectroscopy

Electroabsorption (EA) studies at room temperature on organic thin films based on a dicyanovinyl-quaterthiophene 4T-V(CN)₂ are reported. An electric field modulation is applied to the samples for two different electrode geometries, i.e. sandwich and coplanar versus the organic layer. Changes in optical absorption coefficient of 4T-V(CN)₂ based thin films are measured and analyzed to determine the character of the optical transition in the visible range (400-800 nm). Depending on the experimental electrode configuration, magnitude of electroabsorption responses are different, possibly due to different distribution of the externally applied electric field. The results indicate a higher resolution of EA response for the sandwich electrode configuration and confirm the charge transfer exciton character of 4T-V(CN)₂ in contrast to the unsubstituted quaterthiophene 4T. Finally, a third-order nonlinear susceptibility χ⁽³⁾ (−ω; ω, 0, 0) of 16 × 10⁻¹² e.s.u. is obtained.     

Fundamental limitations of sensitivity of whispering gallery mode gyroscopes

We analyze theoretically both the fundamental and the technical quantum limitations of the sensitivity of a passive resonant optical gyroscope based on a high finesse monolithic optical microcavity. We show that the quantum back action associated with the resonantly enhanced optical cross- and self-phase modulation results in the standard quantum limit of the angle random walk of the gyroscope, which reaches approximately 0.2 deg/hr^1/2 for a millimeter scale CaF₂ whispering gallery mode resonator based device.     

Temperature phase-matching properties of mixed chalcopyrite AgGa1−xInxS2 crystal

AgGa_1−xIn_xS₂ with x = 0.14 ± 0.01 was found to be 90° phase-matchable for the second harmonic generation (SHG) of CO₂ laser radiation at 10.591 μm at 203 °C. In addition, temperature-tuned 90° phase-matched difference frequency generation (DFG) at 4.02 μm was demonstrated by mixing the idler output of a Nd:YAG third harmonic pumped β-BBO optical parametric oscillator and its fundamental source at 1.0642 μm. The Sellmeier and thermo-optic dispersion formulas that reproduce well these experimental data are presented.     

Cylindrical microcavity laser based on the evanescent-wave-coupled gain

A microcavity laser based on the gain only in the evanescent field region of whispering gallery modes has been demonstrated. A cylindrical microcavity of 125 microm diam was surrounded by rhodamine 6G dye molecules in an ethanol solution of lower refractive index such that whispering gallery modes of the microcavity underwent laser oscillation when the dye molecules in the evanescent field region outside the cavity were excited by a second harmonic of a Nd:YAG laser. For particular pumping spots, single-mode laser oscillation of a transverse magnetic mode was observed at about 600 nm with associated cavity Q of 3x10(7).     

Effect of MgO buffer layer thickness on the electrical properties of MgZnO thin film transistors fabricated by plasma assisted molecular beam epitaxy

We report the fabrication and electrical characteristics of thin film transistors based on MgZnO thin films with different thicknesses of MgO buffer layer. The MgZnO thin films with MgO buffer layers were grown on SiO₂/p-Si substrates by plasma assisted molecular beam epitaxy. The effects of the buffer layer thickness on the structural properties of MgZnO films are investigated by X-ray diffraction, and the results show that the crystal quality of the MgZnO film is enhanced with 4 nm MgO buffer layer. The MgZnO TFT with 4 nm MgO buffer layer exhibits an n-type enhancement mode characteristics with a field effect mobility of 1.85 cm²/V s, a threshold voltage of 27.6 V and an on/off ratio of above 10⁶.     

Second and third order nonlinear optical properties of nanostructured ZnO thin films deposited on α-BBO and LiNbO3

The nanocrystalline ZnO films were deposited on α-BaB₂O₄ (0 0 1 2) and LiNbO₃ (0 0 0 1) single crystals by RF-magnetron sputtering technique. Their structure was studied using X-ray diffractometry, scanning electron microscopy and atomic force microscopy. Besides, the optical absorption spectra were investigated. The second and third harmonic generation measurements were performed by means of the rotational Maker fringe technique using Nd:YAG laser at 1064 nm in picoseconds regime. Finally, the second and third order nonlinear susceptibilities were determined and their values have been found and compared.