Compact efficient 1.5 W continuous wave Nd:YVO4/LBO blue laser at 457 nm

A compact folded three-mirror cavity with length of 100 mm is optimized to obtain high efficient 457 nm laser. When the incident pump power into Nd:YVO₄ is 16.3 W, as high as 1.52 W continuous wave 457 nm blue laser is achieved by LBO intracavity frequency doubled. The optical-to-optical conversion efficiency is greater than 9.3%.     

800 mW/1484 nm highly efficient two-cascaded phosphosilicate Raman fiber laser pumped by Nd:YVO4 solid-state laser

Using 1064 nm CW Nd:YVO₄ solid-state laser as a pump, 1-km phosphosilicate fiber and cascaded cavities with two pairs of fiber Bragg grating mirrors for 1239 and 1484 nm, we obtained a CW 800 mW/1484 nm Raman fiber laser (RFL) for an actual incident pump power of about 2 W (Nd:YVO₄ power of 6.90 W). The conversion efficiency is as high as 40%. To the best of our knowledge, this is the highest conversion efficiency of RFL pumped by solid-state laser. The output power instability at 1484 nm in half an hour is less than 3%. In addition, the numerical simulations are also performed. Good agreement between the results of numerical simulation and the results of the experiment has been demonstrated.     

High-efficiency Nd:YVO4 laser emission under direct pumping at 880 nm

We report a high-efficiency Nd:YVO₄ laser pumped by an all-solid-state Q-switched Ti:Sapphire laser at 880 nm in this paper. Output power at 1064 nm with different-doped Nd:YVO₄ crystals of 0.4-, 1.0- and 3.0-at.% under the 880 nm pumping was measured, respectively. Comparative results obtained by the traditional pumping at 808 nm into the highly absorbing ⁴F_5/2 level were presented, showing that the slope efficiency and the threshold with respect to the absorbed pump power of the 1.0-at.% Nd:YVO₄ laser under the 880 nm pumping was 17.5% higher and 11.5% lower than those of 808 nm pumping. In a 4-mm-thick, 1.0-at.% Nd:YVO₄ crystal, a high slope efficiency of 75% was achieved under the 880 nm pumping, with an optical-to-optical conversion efficiency of 52.4%.     

End-pumped 20.2-W Nd:YVO4 cw slab laser at 1342 nm with a hybrid resonator

A 20.2 W laser-diode-end-pumped Nd:YVO₄ slab laser with a hybrid resonator at 1342 nm was demonstrated. The slope efficiency and optical-to-optical conversation efficiency were 30% and 23%, respectively. At output power of 16 W, the M² factor in stable direction was 2.3, and in the unstable direction was 1.2.     

High-efficiency Nd:GdVO4 laser at 1341 nm under 880 nm diode laser pumping into the emitting level

Highly efficient 1341 nm continuous-wave laser under 880 nm diode laser pumping in Nd:GdVO₄ crystal is reported. Comparative results obtained by the traditional pumping at 808 nm were presented, showing that the slope efficiency and the threshold with respect to the absorbed pump power under 880 nm pumping was 34.9% higher and 12.6% lower than those of 808 nm pumping. A high slope efficiency of 49.1% was achieved under 880 nm pumping, with an optical-to-optical conversion efficiency of 41.7%.     

The thermal effect in diode-end-pumped continuous-wave 914-nm Nd:YVO4 laser

The thermal effect and the heat generation in diode-end-pumped continuous-wave 914-nm Nd:YVO₄ lasers are investigated in detail. A theoretical model of a diode end-pumped solid-state laser is constructed to analyse the influence of fractional thermal loading on the thermal effect in the Nd:YVO₄ laser based on finite element analysis. The thermal focal lengths and the end-surface deformations of laser rods in Nd:YVO₄ quasi-three-level and four-level lasers are measured and compared with the results obtained by ordinary interferometry for the demonstration of higher thermal loading in 914-nm laser. Finally the fractional thermal loading in the Nd:YVO₄ quasi-three-level laser is calculated by matching the experimental and the simulated end deformations.     

Comparison of 885 nm pumping and 808 nm pumping in Nd:CNGG laser operating at 1061 nm and 935 nm

A Nd:CNGG laser operated at 935 nm and 1061 nm pumped at 885 nm and 808 nm, respectively, is demonstrated. The 885 nm direct pumping scheme shows some advantages over the 808 nm traditional pumping scheme. It includes higher slope efficiency, lower threshold, and better beam quality at high output power. With the direct pumping, the slope efficiency increases by 43% and the threshold decreases by 10% compared with traditional pumping in the Nd:CNGG laser operated at 935 nm. When the Nd:CNGG laser operates at 1061 nm, the direct pumping increases the slope efficiency by 14% with a 20% reduction in the oscillation threshold.     

Laser diode pumped actively Q-switched Nd:GdVO4 self-Raman laser operating at 1173 nm

A laser diode pumped actively Q-switched Nd:GdVO₄ self-Raman laser operating at 1173 nm is presented. The maximum output power was 2.26 W at an incident pump power of 18 W, with the corresponding optical conversion efficiency of 12.6%. Two different resonator configurations were investigated in order to achieve high output power and efficiency.     

激光二极管端面抽运的高效率1.34μm Nd:YVO4 平凹腔型激光器

理论方面分析了端面抽运的1.34mm Nd:YVO4平凹腔型激光器的各项参数；文中的分析可为同类激光器的设计提供参考。实验方面实现了LD端面抽运的1.34mm Nd:YVO4平凹腔型激光器的运转；在输入泵浦功率为9.0W时，获得了1.34mm 激光输出功率3.51W，光－光转换效率为39.0%。     

High power diode-pumped passively Q-switched and mode-locking Nd:GdVO4 laser at 912 nm

A high power diode-end-pumped passively Q-switched and mode-locking (QML) Nd:GdVO₄ laser at 912 nm was demonstrated for the first time, to the best of our knowledge. A Z-type laser cavity with Cr⁴⁺:YAG crystals as the intracavity saturable absorber were employed in the experiments. Influence of the initial transmission (T_U) of the saturable absorber on the QML laser performance was investigated. Using the T_U = 95% Cr⁴⁺:YAG, as much as an average output power of 2.0 W pulsed 912 nm laser was produced at an absorbed pump power of 25.0 W, then the repetition rates of the Q-switched envelope and the mode-locking pulse were ~ 224 kHz and ~ 160 MHz, respectively. Whereas the maximum output power was reduced to 1.3 W using the T_U = 90% Cr⁴⁺:YAG, we obtained a 100% modulation depth for the mode-locking pulses inside the Q-switched envelope.     

A single wavelength 1339 nm Nd:YAP pulsed laser

The laser oscillating at a weak line of Nd:YAP around 1.3-μm realized though selecting polarization is described. The energy level transitions of Nd:YAP crystal and their polarization properties were analyzed. A thin-film polarizer was adopted to restrain the oscillating of the c-axis strong polarized spectral lines and a reasonable transmittance was designed to suppress the a-axis polarized 1064 nm strong line lasing, and then a-axis polarized 1339 nm pulse laser of 336 mJ for free running mode and 64 mJ for electro-optic Q-switched mode were successfully achieved, corresponding to pulse widths of 180 μs and 35 ns, respectively. This method of selecting polarization to realize weak line oscillating is significant for anisotropic laser crystals doped with Nd³⁺ ions to select the particular transitions.     

Passively Q-switched laser operation in a composite Nd:YVO4/Nd:YVO4/Nd:YVO4 crystal with a GaAs saturable absorber

By using a piece of GaAs wafer as the saturable absorber, the performance of the passively Q-switched composite Nd:YVO₄ laser with different output couplers has been demonstrated for the first time as far as we know. The largest continuous wave output power of 1.52 W is obtained at the incident pump power of 5.31 W, giving an optical conversion efficiency of 28.7% and a slope efficiency of 30.2%. The shortest pulse width of 11 ns, the largest single-pulse energy of 2.49 μJ and the highest peak power of 190 W are also obtained.     

LD端面抽运c切Nd:YVO4自拉曼倍频589 nm黄光激光研究

报道了LD端面抽运c切Nd:YVO₄自拉曼倍频黄光激光器的研究. 采用10 mm长,二类临界相位匹配角 (θ=69°,ø=0°)切割的KTP晶体作为倍频晶体. 考虑到c切Nd:YVO₄跃迁截面较小,所以通过对谐振腔及晶体膜系的严格设计,减少腔内插入损耗和衍射损耗. 最终在脉冲重复率为10 kHz,抽运功率为11.2 W下,获得了最高570 mW的倍频黄光激光输出,对应抽运光到倍频黄光的转化效率约为 关键词： 拉曼激光 c切Nd:YVO₄')" href="#">c切Nd:YVO₄ 589 nm 黄光激光     

High-power diode-end-pumped CW Nd:GdVO4 laser

We report on a high-power diode-end-pumped CW Nd:GdVO₄ laser. Under the pump power of 39.5 W, a maximum output power of 19.8 W and a slope efficiency of 58.5% were obtained. The beam quality M² at maximum output power was measured to be around 2.62. The thermal focal length in Nd:GdVO₄ crystal under the pump power from 22 to 40.6 W was measured. The pump-induced damage threshold was estimated to be 28.6 kW/cm².     

Simultaneous dual-wavelength oscillation at 1357 nm and 1444 nm in a Kr-flashlamp pumped Nd:YAG laser

A Nd:YAG laser pumped by a Kr-flashlamp with simultaneous dual-wavelength operation at 1357 nm (⁴F_3/2 → ⁴I_13/2(R₁ → X₄)) and 1444 nm (⁴F_3/2 → ⁴I_13/2(R₁ → X₇)) is demonstrated and its characteristics was analyzed. The output energy of 82 mJ at 1357 nm and 138 mJ at 1444 nm were achieved simultaneously with the maximum electrical input energy of 44 J. Stability of the output energy in the dual-wavelength operation was 1.41% at the maximum input energy of 44 J. However, the stabilities at each wavelength in the dual-wavelength operation showed much lower stability.     

Efficient and high-power laser-diode single-end-pumped Nd：YVO4 continuous wave laser at 1342nm

A compact, efficient and high-power laser diode （LD） single-end-pumped Nd：YVO4 laser with continuous-wave emission at 1342 nm is reported. With a single crystal single-end-pumped by fibre-coupled LD array, an output power of 7.36W is obtained from the laser cavity of concave-convex shape, corresponding to an optical-to-optical efficiency of 32.8%. The laser is operated in TEM00 mode with small rms amplitude noise of 0.3%. The influences of the Nd concentration, transmissivity of the output mirror and the cavity length on the output power have been studied experimentally.     

Analysis of a diode-pumped Nd:YVO4 laser passively Q switched with GaAs

A diode-pumped Nd:YVO₄ laser passively Q switched with GaAs is studied theoretically and experimentally. We have demonstrated the influence of single-photon absorption, two-photon absorption and free-carrier absorption in GaAs on the Q-switched pulse characteristics. The pulse profile, pulse energy and pulse width of the Q switching with GaAs are simulated by using the conventional rate equations of the four-level laser system. The experimental results show reasonable agreement with the theoretical results on the whole.     

Diode-pumped doubly Q-switched mode-locked YVO4/Nd:YVO4 laser with AO and GaAs saturable absorber

By using both acousto-optic (AO) modulator and GaAs saturable absorber, a diode-pumped doubly Q-switched and mode-locked (QML) YVO₄/Nd:YVO₄ laser is presented. The average output power and the pulse width of the Q-switched envelope have been measured. The Q-switch pulse energy of the doubly QML laser are higher than that only with GaAs. The stability of the QML laser with the dual-loss-modulation is significantly improved if compared to that only with GaAs.The experimental results show that the doubly QML YVO₄/Nd:YVO₄ laser has nearly 80% modulation depth and deeper than that of the singly passively QML pulse. The doubly Q-switched mode-locked pulse inside the Q-switched envelope has a repetition rate of 111 MHz and its pulse width is estimated to be about 700 ps. By using a hyperbolic secant square function and considering the Gaussian distribution of the intracavity photon density, the coupled equations for diode-pumped dual-loss-modulated QML laser is given and the numerical solutions of the equations are in good agreement with the experimental results.     

Q-switched and mode-locked diode-pumped Nd:YVO4 laser with an intracavity composite semiconductor saturable absorber

We have demonstrated a passively Q-switched and mode-locked Nd:YVO₄ laser with an intracavity composite semiconductor saturable absorber (ICSSA). Stable Q-switched and mode-locked pulses with Q-switched envelope pulse duration of 180 ns and pulse repetition rate of 72 KHz have been obtained. The maximum average output power was 1.45 W at 8 W incident pump power. The repetition rate of the mode-locked pulses inside the Q-switched envelope was 154 MHz. Experimental results revealed that this ICSSA was suitable for Q-switched and mode-locked solid-state lasers.     

Theoretical and experimental investigations of a diode-pumped high-power continuous-wave 912 nm Nd:GdVO4 laser operation at room temperature

Based on the rate equation of Nd³⁺-doped quasi-three-level lasers, a theoretical model of diode-end-pumped continuous-wave 912 nm Nd:GdVO₄ laser is presented. Lasing threshold and slope efficiency considering reabsorption effect are calculated and analyzed. It is found that the output performance of 912 nm laser operating at room temperature is influenced remarkably by the reabsorption loss and spatial distribution of the pump beam and laser beam. In experiments, the output power and average slope efficiency of 912 nm laser were investigated under different conditions. After optimization at the parameters of laser medium, working temperature and spatial distribution of the pump beam, up to 16.2 W continuous-wave 912 nm laser output was obtained at incident pump power of 67.0 W, with an average slope efficiency of 41.7%, to the best of our knowledge, this is the highest output power of diode-pumped 912 nm Nd:GdVO₄ laser by far.