Broadening of omni-directional reflection range in 1-d photonic crystal by using photonic quantum well structures

In the present communication, it is shown that it is possible to enlarge of omni-directional reflection (ODR) range in one-dimensional photonic crystals by using photonic quantum well structures. This photonic quantum well structure consists of different one dimensional photonic crystals. We propose air/(AB)₆/(AC)_n/(AB)₆/substrate(SiO₂) structure, where A, B and C are different materials. By choosing appropriate values of controlling parameters and the value of n, we can enhance the ODR range. Also, we can tune the ODR range to a desired wavelength region.     

Omni-directional reflectors for deep blue LED using symmetric autocloning method

Omni-directional reflectors (ODRs) for deep blue LED were designed and fabricated using symmetric autocloning method. The symmetric stack multi-layers for the reflectors were designed by finite-difference time-domain simulation. The fabricating process of ODR is combined with the techniques of anodic aluminum oxide (AAO) process and autocloning method. The two-dimensional structure template of nano-channel array was grown using AAO with the period of 150 nm. Then the shaping layer was deposited on the AAO template by evaporation deposition. Besides, the ion etching was applied to modify the apex angle to the triangle shape at 100°. Finally, the sub/(0.5TiO₂ SiO₂ 0.5TiO₂)⁸ multi-layer stack was deposited on the shaping layer using autocloning method to achieve the ODR. The results show the reflective spectra of ODR at the incident angles of 0, 30, 45, and 60° had high values within the range 400–450 nm. Besides, the central wavelength shifting is not obvious which is very good for keeping the color of LED stable.     

Simple method for investigating electromagnetic properties of high-Tc superconductors at two-millimeter wavelengths

A method for investigating the electromagnetic properties of high-T_c superconductors (HTS) in a 2-mm wavelength band has been proposed. The method is based on the use of a cylindrical tube open dielectric resonator (ODR) loaded with a HTS sample. The Josephson harmonic generation at microwave frequencies can be investigated by means of the method. A small cross section of the ODR makes it possible to investigate surface variations of HTS sample electromagnetic properties and their temperature dependencies.     

Extremely wide band Rayleigh resonant reflector with sharp angular spectra in near infrared wavelength band

In this paper, we propose an extremely broadband Rayleigh resonant reflector with sharp angular spectra operating in near infrared wavelength band, this device consisting of a single germanium resonant grating layer is designed and analyzed by using with the rigorous vector diffraction theory. At the Rayleigh angle, the first diffracted order can be appear from evanescent to a propagating one, thus, a very sharp angular spectrum characteristics can be presented in the device. Based on the guided mode resonant effect, high index material such as silicon and germanium can be designed as wide band reflector, beam splitter and polarizer in near infrared wavelength region. Through connecting Rayleigh phenomena and guided mode resonant effect, we can design a new kind of optical devices with versatile characteristics such as sharp angular spectra and extremely wide reflection band. In this paper, we present a Rayleigh resonant reflector with extremely high reflection (R > 99.5%) for TE polarization light over ∼600 nm wavelength range and sharp angular spectral distribution. In addition, it is shown from our calculations that the high-index nano-layer located adjacent to the substrate is seen to critically affect the resulting spectra of Rayleigh resonant reflector.     

Nanostructured porous SiO2 films for antireflection coatings

Thin films with a low refractive index play an important role in optics, optoelectronics, and microelectronics. In this study, we present nanostructured porous SiO₂ films fabricated by using a glancing angle deposition technique. These nanostructured porous SiO₂ films deposited at an angle of 85° show very low refractive indices of 1.08 at 633 nm. As an application, a four-layer antireflection coating for visible wavelength is designed and fabricated using SiO₂ material only. The normal incidence reflectance of the antireflection coating averaged between 400 and 800 nm is about 0.04%. The microstructure and the surface morphology are also investigated by using a scanning electron microscope.     

Dispersion characteristic of hexagonal and square lattice chalcogenide As2Se3 glass photonic crystal fiber

In this paper, we report a chalcogenide As₂Se₃ glass photonic crystal fiber (PCF) for dispersion compensating application. We have used the improved fully vectorial effective index method (IFVEIM) for comparing the dispersion properties (negative and zero dispersion) and effective area in hexagonal and square lattice of As₂Se₃ glass PCF using different wavelength windows. It has been demonstrated that due to their negative dispersion parameter and negative dispersion slope in wavelength range 1.2-2.5 μm, both lattice structures of As₂Se₃ glass PCFs, with pitch (Λ = 2 μm), can be used as dispersion compensating fibers. Further, design parameters have been obtained to achieve zero dispersion in these fibers. It is also shown that As₂Se₃ glass PCF provides much higher negative dispersion compared to silica PCF of the same structure, in wavelength range 1.25-1.6 μm and hence such PCF have high potential to be used as a dispersion compensating fiber in optical communication systems.     

Single resonant and widely tunable ultrathin cladding long-period fiber grating filters

A spectrally single resonant and widely tunable, ultrathin cladding long-period fiber grating (UCLPG) is demonstrated in the present paper. Both experimental and theoretical analyses of the characteristics for the proposed device are accomplished. Since the single resonant and widely tunable characteristics of the proposed UCLPG are strongly influenced by the waveguide structure and surrounding material, both material dispersion and waveguide dispersion were included in the calculation for determining the wideband tuning range and resonant spectra of the UCLPG. The tuning range covered wavelength from 1.41 to 1.56 μm for the variation of refractive index of 1–1.445 (optical liquid n _D 1:456 for λ 1:5 mm) is achieved in the study.     

Characterization of the nonlinear refractive index of the laser crystal Yb:KGd(WO<Subscript>4</Subscript>)<Subscript>2</Subscript>

We present results of the characterization of the nonlinear refractive index of the laser crystal Yb:KGd(WO₄)₂ using a z-scan technique over the 800–1600 nm wavelength range. Based on our experimental and theoretical results we conclude that Yb:KGW crystal is a good candidate for efficient Kerr-lens mode locking. PACS 42.65.An; 42.65.Hw; 42.55.Rz; 42.65.Re     

Static laser light scattering (SLLS) investigations of the scattering parameters of a synthetic polymer

A laser light scattering system was built to study the scattering parameters of some materials in solution form. The light source used was an argon-ion laser at wavelength 488 nm (all lines). The investigated material was a synthetic polymer which has a wide range of applications in the field of teeth medicine applications. This is polymethyl-methacrylate (PMMA) which is used for the formation of artificial clamps. The PMMA was solved in both acetone and methyl-ethyl-ketone (MEK). The acetone solvent is chosen for its high specific refractive index increment dn/dc at the same wavelength 488 nm as the argon laser source. The angular distribution of the scattered laser light intensities of PMMA dissolved in acetone was measured at different scattering angles from 30 to 150° for each concentration. The angular distributions have a symmetrical behavior about the scattering angle π/2; by using the scattered intensities the Zimm plot was formed. The weight average molecular weight (WAMW) was determined, the two other scattering parameters like as radius of gyration, h, and the second verial coefficient, A₂ were determined.     

OMNIDIRECTIONAL HIGH REFLECTOR FOR INFRARED WAVELENGTH

We have purposed the design of omnidirectional high reflectors with wide bandwidth (nearly 6300A⁰) for the infrared wavelength. Using translational matrix method for numerical calculation, it is found that a complete photonic band gap high reflector covering the wavelength region 11500A⁰ to 17800A⁰ is obtained for the quarter wave stack air / (n_L n_H)⁷ / air by using the tellurium (n=4.60) and TiO₂ (n=2.35) as material of high reflective index and SiO₂(n=1.45) low refractive index. Due to high refractive index of contrast of the structure i.e. SiO₂/tellurium, a large complete photonic band gap, omnidirectional high reflector, has been observed for the infrared wavelengths. This type of omnidirectional high reflector can be used in telecommunication. Besides this, we have studied the effective refractive indices (phase and group) of the proposed structures. It is observed that the effective refractive indices (phase and group) of the high omnidirectional reflector band are largely changed near the band edges due to the high refractive index of contrast, and the reflections from the internal interfaces of the structure.     

Robust 2 × 2 Multimode Interference Optical Switch

A robust 2 × 2 photonic switch based on multimode interference (MMI) effects is proposed. We demonstrate that the device is very tolerant to material modifications and typical fabrication errors. This is a result of the MMI design and the high symmetry of the switch. The key parameter for the operation of the device is that the input light forms a pair of well defined self-images exactly in the middle of the switch. The index modulated regions precisely overlap the positions where these two self-images are formed. By creating identical contact features at these locations, any refractive index change induced in the material as a result of electrical isolation will be replicated in both self-images, and therefore the off-state output will not be altered. In the same way, offset and dimension errors are reflected symmetrically on both self-images and do not seriously affect the imaging. The characteristics of the switch under different scenarios are investigated using the finite difference beam propagation method. By employing this configuration, crosstalk levels better than −20 dB are achievable over a wavelength range of 100 nm while maintaining polarization independence.     

On the Optical Properties of Thin‐Film Vanadium Dioxide from the Visible to the Far Infrared

The insulator‐to‐metal transition (IMT) in vanadium dioxide (VO₂) can enable a variety of optics applications, including switching and modulation, optical limiting, and tuning of optical resonators. Despite the widespread interest in VO₂ for optics, the wavelength‐dependent optical properties across its IMT are scattered throughout the literature, are sometimes contradictory, and are not available at all in some wavelength regions. Here, the complex refractive index of VO₂ thin films across the IMT is characterized for free‐space wavelengths from 300 nm to 30 µm, using broadband spectroscopic ellipsometry, reflection spectroscopy, and the application of effective‐medium theory. VO₂ films of different thicknesses are studied, on two different substrates (silicon and sapphire), and grown using different synthesis methods (sputtering and sol–gel). While there are differences in the optical properties of VO₂ synthesized under different conditions, these differences are surprisingly small in the ≈2–11 µm range where the insulating phase of VO₂ also has relatively low optical loss. It is anticipated that the refractive‐index datasets from this article will be broadly useful for modeling and design of VO₂‐based optical and optoelectronic components, especially in the mid‐wave and long‐wave infrared.     

短波通滤光片膜系设计

详细介绍用等效折射率概念设计短波通滤光片的原理和计算方法。根据原理和方法，选择二氧化钛（TiO2）作为高折射率材料、二氧化硅（SiO2）作为低折射率材料。首先从理论上计算出用这2种材料设计的波长λ=950～1150nm的短波通滤光片所需要的周期数，然后给出短波通滤光片的主膜系和光谱曲线。由于据此周期数设计出的膜系光谱曲线在750～810nm处的透过率不符合要求，因此对该膜系进行了改进。依照改进的设计进行多次制备，最终制备出了符合要求的短波通滤光片，找到了最佳制备工艺和方法。最后，对制备出来的短波通滤光片薄膜进行了各种环境实验。实验结果表明，膜层的各项指标符合设计要求。     

Fabrication and annealing analysis of three-dimensional photonic crystals

Three-dimensional face-centered-cubic (fcc) photonic crystals (PhCs) are fabricated on quartz substrate using vertical deposition technique, and followed by annealing in a temperature range of 200-700 °C. The monodispersed SiO₂ microspheres with a diameter of 220 nm in colloidal solution are synthesized using tetraethylorthosilicate as a precursor material. The as grown opal structure exhibits a strong photonic band gap (PBG) around 450 nm in the transmission spectrum. We find that the position of PBG peak in the spectrum is relevant to incident angle of light. Moreover, it is very sensitive to annealing temperature. It quickly shifts to short wavelength direction with annealing temperature increasing. The effect results from the decrease in refraction index due to the moisture evaporation in silica microspheres.     

Polarized fluorescence spectra analysis of Yb:KGd(WO4)2

The average fluorescence wavelength of the laser crystal is the most important factor in the radiation-balanced laser (RBL). Polarized fluorescence spectra measurements of the anisotropic laser material ytterbium-doped potassium gadolinium tungstate, Yb³⁺:KGd(WO₄)₂, are carried out along principal refractive index directions m, p, g in three configurations in order to achieve the best design for RBL. The average fluorescence wavelength of g polarization is the shortest, so g should be in the face of fluorescence emission; m polarization should be normal to that face to avoid its strong absorption to fluorescence photons. Fluorescence re-absorption causes the average fluorescence wavelength of the directly measured spectra red-shifted at least 9 nm. Methods for depressing radiation trapping are suggested accordingly, which are high power pumping, low doping concentration, small dimensions and fusing with undoped KGd(WO₄)₂.     

Infrared optical properties of Ba(Zr0.20Ti0.80)O3 and Ba(Zr0.30Ti0.70)O3 thin films prepared by sol-gel method

Ba(Zr_xTi_1−x)O₃ (BZT) (x = 0.20 and 0.30) thin films are deposited on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrate by sol-gel method. X-ray diffraction patterns show that the thin films have a good crystallinity. Optical properties of the films in the wavelength range of 2.5-12 μm are studied by infrared spectroscopic ellipsometry (IRSE). The optical constants of the BZT thin films are determined by fitting the IRSE data using a classical dispersion formula. As the wavelength increases, the refractive index decreases, while the extinction coefficients increase. The effective static ionic charges are derived, which are smaller than that in a purely ionic material for the BZT thin films.     

Optimization of thin-film design for multi-layer dielectric grating

Thin-film design used to fabricate multi-layer dielectric (MLD) gratings should provide high transmittance during holography exposure, high reflectance at use wavelength and sufficient manufacturing latitude of the grating design making the MLD grating achieve both high diffraction efficiency and low electric field enhancement. Based on a (HLL)⁹H design comprising of quarter-waves of high-index material and half-waves of low-index material, we obtain an optimum MLD coating meeting these requirements by inserting a matching layer being half a quarter-wave of Al₂O₃ between the initial design and an optimized HfO₂ top layer. The optimized MLD coatings exhibits a low reflectance of 0.017% under photoresist at the exposure angle of 17.8° for 413 nm light and a high reflectance of 99.61% under air at the use angle of 51.2° for 1053 nm light. Numerical calculation of intensity distribution in the photoresist coated on the MLD film during exposure shows that standing-wave patterns are greatly minimized and thus simulation profile of photoresist gratings after development demonstrates smoother shapes with lower roughness. Furthermore, a MLD gratings with grooves etched into the top layer of this MLD coating provides a high diffraction efficiency of 99.5% and a low electric field enhancement ratio of 1.53. This thin-film design shows perfect performances and can be easily fabricated by e-beam evaporation.     

One dimensional photonic band gap material as an omnidirectional reflector

In this article, the reflection properties in one-dimensional dielectric-dielectric photonic band gap (PBG) structure have been studied. We have used SiO₂ as material of low refractive index and Te as a high refractive index material. Reflectivity of proposed PBG structure is plotted as a function of wavelength and angle of incidence and omni-directional PBGs are computed theoretically. To obtain reflectance, we used transfer matrix method for solving Maxwell’s equations for electromagnetic wave in PBG structures. For a large range of frequency, the PBG structure is found to exhibit omni-directional reflection which can be exploited in devices such as optical resonators, mirrors, etc.     

Two and four photon absorption and nonlinear refraction in undoped,chromium doped and copper doped ZnS quantum dots

The ZnS quantum dots (QDs) with Cr and Cu doping were synthesized by chemical co-precipitation method. The nanostructures of the prepared undoped and doped ZnS QDs were characterized by UV–vis spectroscopy, Transmission electron microscopy (TEM) and X-ray diffraction (XRD). The sizes of QDs were found to be within 3–5 nm range. The nonlinear parameters viz. Two photon absorption coefficient (β₂), nonlinear refractive index (n₂), third order nonlinear susceptibility (χ³) at wavelength 532 nm and Four photon absorption coefficient (β₄) at wavelength 1064 nm have been calculated by Z-scan technique using nanosecond Nd:YAG laser in undoped, Cr doped and Cu doped ZnS QDs. Higher values of nonlinear parameters for doped ZnS infer that they are potential material for the development of photonics devices and sensor protection applications.     

Influence of temperature annealing on optical properties of SrTiO3/BaTiO3 multilayered films on indium tin oxide

We have prepared SrTiO₃/BaTiO₃ thin films with multilayered structures deposited on indium tin oxide (ITO) coated glass by a sol-gel deposition and heating at 300-650 °C. The optical properties were obtained by UV-vis spectroscopy. The films show a high transmittance (approximately 85%) in the visible region. The optical band gap of the films is tunable in the 3.64-4.19 eV range by varying the annealing temperature. An abrupt decrease towards the bulk band gap value is observed at annealing temperatures above 600 °C. The multilayered film annealed at 650 ° C exhibited the maximum refractive index of 2.09-1.91 in the 450-750 nm wavelength range. The XRD and AFM results indicate that the films annealed above 600 ° C are substantially more crystalline than the films prepared at lower temperatures which were used to change their optical band gap and complex refractive index to an extent that depended on the annealing temperature.