Thermal- and Spectral-Characteristics of High-Power Quasi-Continuous Wave 940-nm InGaAs Diode Laser Arrays

Experimental results of the thermal and spectral characteristics of a monolithic stack of high power quasicontinuous wave 940-nm InGaAs linear laser diode arrays have been evaluated. Thermal resistance as the most important thermal parameter characterizing a high-power laser diode package was obtained using the temperature rise measured directly by a thermo-camera. A new simple and convenient technique to measure a spectral transition of the emission from laser diode arrays is proposed. Spectral chirping due to the transient thermal power dissipated during the laser pulse was observed as a time-evolution of the spectral profile; it gave a comprehensible image of the chirping behavior. Comparing the temperature rise in the diode junction with the thermal simulation, it was determined that the thermal shift of central wavelength dλ/dT was 0.21 nm/°C. Detailed performances were identified for pumping a Yb³⁺ doped crystalline laser, and it was verified that the laser diode arrays were satisfactory to meet pumping source requirements for coupling to Yb³⁺ absorption linewidth.     

基于等效电路的半导体激光器热噪音特性仿真研究

通过引入Langevin噪音项的噪音等效电路研究了半导体激光器的热噪音特性．研究表明，在激光器的工作过程中，由于自加热效应所引来的热噪音是不能够被忽略的．本文基于半导体激光器的噪音等效电路，仿真分析不同频带宽度、不同注入电流情况下，工作温度的变化对激光器结电压噪音谱的影响．     

A smile insensitive method for spectral linewidth narrowing on high power laser diode arrays

To eliminate the smile effect in spectral linewidth narrowing on high power laser diode arrays, we have introduced a plane reflective mirror into a common Littrow configuration external cavity to enhance the correlation among emitters. By this way, we obtained uniform spectral distribution among emitters of a 64-elements laser diode array with 35 GHz linewidth and 41 W output laser power.     

Generation of 25 ps pulses by self induced mode locking of a single broad area diode laser with 300 mW average output power

Detailed investigations of the spatiotemporal and spectral emission properties of a high power diode laser are presented. The AR coated laser diode with design wavelength of 940 nm is driven in an external resonator. The laser generates up to 340 mW average output power in a train of picosecond pulses with durations of 25 ps and repetition rates of 2.6 GHz. The mechanism of mode locking is discussed as self pulsation because of the strong correlation between round trip time and repetition rate. The double-sided exponential pulses suggest saturable absorber action.     

Circuit analysis of the compound quasi-optical power combiner

In 1991, we developed a new type of quasi-optical power combiner, called a compound quasi-optical power combiner, at Ka-band. In this paper, the circuit of such a compound quasi-optical power combiner is analysed. Its equivalent circuit model is proposed. The circuit equations, the balance condition, the injection locking and the stabilized condition of the compound quasi-optical power combiner are studed by the equivalent circuit model. As an example, a compound quasi-optical power combiner which consists of two single—cavity, two—device power combiners is analysed     

Simplified model for calculation of power and spectral characteristics of laser diode with fiber Bragg grating

A simplified model consisting of a laser diode, air gap, and optical fiber is used to calculate power and spectral characteristics and the band width of the radiation of laser with fiber Bragg grating. The results of the simplified model are in reasonable agreement with the experimental data on power and spectral characteristics. The radiation band width of the laser diode with fiber Bragg grating can be less than the band width for a single laser diode by four orders of magnitude.     

同轴-三平板型水介质脉冲输出开关实验研究

设计了用于脉冲功率装置的4 MV水介质同轴 三平板型输出开关。该脉冲功率装置将由24路相同的独立模块组成，每路模块由Marx发生器、中间储能器、激光触发气体开关、脉冲形成线、水介质脉冲输出开关、脉冲传输线等组成。水介质脉冲输出开关是同轴 三平板结构水介质多通道自击穿开关，由输入输出电极、预脉冲屏蔽板和连接部件组成。进行了有预脉冲屏蔽板结构和无预脉冲屏蔽板结构的自击穿水开关实验研究。有预脉冲屏蔽板结构开关的输入、输出电极都是半球电极，直径分别是8 cm和5 cm；无预脉冲屏蔽板结构开关为针 板结构，输入电极为平板电极，输出电极为直径3 cm的电极棒。Marx发生器充电70 kV，开关的击穿电压为3 MV，放电电流为450 kA。在3 MV等级的击穿电压下，有预脉冲屏蔽板结构开关的抖动约6 ns，没有预脉冲屏蔽板结构开关的抖动减小至3 ns。     

外调制激光器输出功率高精度控制技术研究

为了研究高速1550 nm微波光纤链路的高精度外调制特性,针对多量子阱分布反馈激光器的物理模型讨论了输出功率、阈值电流与温度的依赖关系,建立了相应的恒温恒功率控制电路,使激光器输出功率稳定在±0.005 dB以内,调制输出3 dB谱宽为0.5 nm,边模平坦,边模抑制比大于30 dB。另外设计了自动增益控制电路和附加相位调制电路,对外调制阶段的光功率进行控制。实验结果表明,采用1550 nm激光器及上述控制电路构成相应的外调制微波光纤链路系统,可有效地提高光发射模块输出光功率的稳定性,克服了直接调制带来的光谱展宽和消光比不稳定的缺点,实现了微波信号的高线性低失真传输。     

Dual‐wavelength monolithic Y‐branch distributed Bragg reflection diode laser at 671 nm suitable for shifted excitation Raman difference spectroscopy

A dual‐wavelength monolithic Y‐branch distributed Bragg reflection (DBR) diode laser at 671 nm is presented. The device is realized with deeply etched surface DBR gratings by one‐step epitaxy. A maximum optical output power of 110 mW is obtained in cw‐operation for each laser cavity. The emission wavelengths of the device are 670.5 nm and 671.0 nm with a spectral width of 13 pm (0.3 cm⁻¹) and a mean spectral distance of 0.46 nm (10.2 cm⁻¹) over the whole operating range. Together with a free running power stability of ± 1.1% this most compact diode laser is ideally suited as an excitation light source for portable shifted excitation Raman difference spectroscopy (SERDS).     

Development of a tunable diode laser sensor for measurements of gas turbine exhaust temperature

A tunable diode laser (TDL) temperature sensor is designed, constructed, tested, and demonstrated in the exhaust of an industrial gas turbine. Temperature is determined from the ratio of the measured absorbance of two water vapor overtone transitions in the near infrared where telecommunication diode lasers are available. Design rules are developed to select the optimal pair of transitions for direct absorption measurements using spectral simulations by systematically examining the absorption strength, spectral isolation, and temperature sensitivity to maximize temperature accuracy in the core flow and minimize sensitivity to water vapor in the cold boundary layer. The contribution to temperature uncertainty from the spectroscopic database is evaluated and precise line-strength data are measured for the selected transitions. Gas-temperature measurements in a heated cell are used to verify the sensor accuracy (over the temperature range of 350 to 1000 K, ΔT∼2 K for the optimal line pair and ΔT∼5 K for an alternative line pair). Field measurements of exhaust-gas temperature in an industrial gas turbine demonstrate the practical utility of TDL sensing in harsh industrial environments. PACS 42.62.Fi; 42.55.Px; 42.62.Cf; 39.30.+w     

A beam shaping design for coupling high power diode laser stack to fiber with capability of spectral narrowing and stabilizing

We applied a VHG-FAC lens in our design in this work to collimate the fast axis and lock the output spectrally. We used a beam shaping technique to improve the beam symmetry and power density of a high power diode laser stack with a stripe mirror plate, a V-Stack mirror and polarization beam combining elements. By this technique, the beam of a high power diode laser stack is effectively coupled into a standard 365 μmcore diameter and a NA = 0.22 fiber. By this technique, compactness, higher efficiency, narrower spectral line width and lower production cost of the diodes are possible.     

A tunable diode-laser spectrometer for the MIR region near 7.2 μm applying difference-frequency generation in AgGaSe2

2 and two diode lasers as pump sources are presented. A single-mode Fabry–Pérot-type tunable diode laser (TDL) and an external-cavity diode laser (ECL) were combined to generate radiation in the mid-infrared region near 7.2 μm. With a TDL at a wavelength of approximately 1290 nm and an ECL emitting between 1504 and 1589 nm it was possible to carry out spectroscopic experiments concerning SO₂ at five different phasematching points between 1350 and 1400 cm^-1 by fixing the wavelength of one pump laser and tuning the wavelength of the other. With an input power of 8 mW for the single-mode Fabry–Pérot-type diode laser and 6 mW for the external-cavity laser an output power of about 10 nW was generated. Using the tuning capabilities of the external-cavity laser a spectral region up to 5 cm^-1 could be covered within one scan. Measurements of SO₂ absorption lines at low pressure demonstrate the high-resolution features of the spectrometer. Moreover, these data provide new direct experimental phasematching data for the rarely investigated spectral region at 7.2 μm. Received: 27 October 1997/Revised version: 8 May 1998     

Noise characteristics of a high-power ytterbium-doped fibre amplifier at 1083 nm

Experimental results are reported for the noise characteristics of an Yb-doped fibre amplifier pumped at 975 nm, used as a booster of a low-noise narrow-linewidth single-frequency 1083-nm wavelength laser diode. The maximum output power of the amplifier is 1.2 W with a gain larger than 30 dB. An increase of the intensity-noise spectral density relative to the signal, by approximately 6.5 dB, is introduced by the amplification process, due to signal-amplified spontaneous-emission (ASE) beat noise. A remarkable increase of the noise level with decreasing frequency is observed below ≈35 kHz, probably due to technical noise of the amplifier pump diodes. The spectral broadening due to amplifier phase noise was measured to be less than 300 Hz with a 5-kHz-linewidth Nd:YAG laser and that for the 300-kHz-linewidth diode laser at 1083 nm is therefore expected to be in the same range. Received: 5 October 1999 / Revised version: 2 December 1999 / Published online: 24 March 2000     

A 9.5-W 82-MHz-repetition-rate picosecond optical parametric generator with cw diode laser injection seeding

We report on an injection-seeded 9.5-W 82-MHz-repetition-rate picosecond optical parametric generator (OPG) based on a 55 mm long crystal of periodically poled lithium niobate (PPLN) with a quasi-phase-matching (QPM) grating period of 29.75 μm. The OPG is excited by a continuously diode pumped mode-locked picosecond Nd:YVO₄ oscillator-amplifier system. The laser system generates 7 ps pulses with a repetition rate of 82.3 MHz and an average power of 24 W. Without injection-seeding the total average output power of the OPG is 8.9 W, which corresponds to an internal conversion efficiency of 50%. The wavelengths of the signal and idler waves were tuned in the range 1.57–1.64 μm and 3.03–3.3 μm, respectively, by changing the crystal temperature from 150 °C to 250 °C. Injection seeding of the OPG at 1.58 μm with 4 mW of single frequency continuous-wave radiation of a distributed-feedback (DFB) diode laser increases the OPG output to 9.5 W (53% conversion efficiency). The injection seeding increases the pulse duration and reduces the spectral bandwidth. When pumped by 10 W of 1.06 μm laser radiation, the duration of the signal pulses increased from 3.6 ps to 5.5 ps while the spectral bandwidth is reduced from 4.5 nm to 0.85 nm. Seeding thus improved the time-bandwidth product from 1.98 to a value of 0.56, much closer to the Fourier limit. Received: 29 April 2002 / Published online: 8 August 2002     

多波长红外激光二极管峰值光谱热漂移研究

为了满足红外激光测试技术对多光谱集成光源在光谱范围和峰值精度等方面的要求,提出了一种高精度的多波长红外激光二极管,并设计了能够集成860 nm,905 nm和1064 nm(脉冲/单模)四种激光芯片的封装结构.建立了基于上述封装结构下中心热沉的温度场分布模型,并根据数学建模工具求解的中心热沉温度场数值分布规范了中心热沉的加工工艺.为了验证多波长激光二极管中心热沉对输出峰值光谱热漂移现象的抑制效果,制备了多波长激光二极管样机,并搭建了观察其峰值光谱热漂移现象的实验装置.实验结果显示,样机仅有两种芯片的峰值光谱发生了1—3 nm的微弱漂移,并未超出规定的峰值半宽.该现象证明了多波长激光二极管的输出光谱具备较高的精度和良好的稳定性.     

Miniaturized highly brilliant diode laser modules for future display applications

We demonstrate diode laser modules with high spectral radiance larger than 1 GW/cm²/sr/nm in the visible spectral range. These highly brilliant laser light sources enable the development of next-generation 3D displays. About 1W output power from small-sized modules was achieved at 635 nm by direct diode laser emission and at 530 nm using single pass second harmonic generation (SHG) of a highly brilliant near-infrared laser diode.     

Characterization of a high-power tapered semiconductor amplifier system

We have characterized a semiconductor amplifier laser system which provides up to 200 mW output after a single-mode optical fiber at 780 nm wavelength. The system is based on a tapered semiconductor gain element, which amplifies the output of a narrow-linewidth diode laser. Gain and saturation are discussed as a function of operating temperature and injection current. The spectral properties of the amplifier are investigated with a grating spectrometer. Amplified spontaneous emission (ASE) causes a spectral background with a width of 4 nm FWHM. The ASE background was suppressed to below our detection limit by a proper choice of operating current and temperature and by sending the light through a single-mode optical fiber. The final ASE spectral density was less than 0.1 nW/MHz, i.e. less than 0.2% of the optical power. Related to an optical transition linewidth of Γ/2π=6 MHz for rubidium, this gives a background suppression of better than -82 dB. An indication of the beam quality is provided by the fiber coupling efficiency of up to 59%. The application of the amplifier system as a laser source for atom-optical experiments is discussed. Received: 8 May 2000 / Revised version: 21 September 2000 / Published online: 7 February 2001     

大功率半导体激光器阵列热串扰行为

以硬焊料传导制冷,30%填充因子半导体激光器阵列为例,建立了三维有限元模型,对阵列内部各发光单元之间的热串扰行为进行了分析研究。结果表明,当其连续波工作时间大于1.2 ms后,阵列内发光单元之间出现热串扰现象;当次热沉由CuW合金改为铜金刚石复合材料时,阵列内发光单元自热阻和相邻发光单元的串扰热阻降低,有效地降低了各发光单元之间的热串扰行为。保持阵列宽度、发光单元数目及发光单元周期不变,发现随阵列填充因子的增加,器件热阻以指数衰减趋势逐渐降低,而发光单元间的热串扰特性对此变化并不敏感;保持阵列单个发光单元输出功率,发光单元尺寸及阵列宽度不变,增加发光单元个数后,阵列内各发光单元之间热串扰加剧,填充因子越高阵列升温速率越快;但在最初约70 s内,包含不同数目发光单元的阵列最高温度差异仅约0.5 ℃,有利于多发光单元高填充因子器件高功率输出。     

Efficient laser operation and continuous-wave diode pumping of Cr2+:ZnSe single crystals

Efficient continuous-wave laser operation of Cr²⁺:ZnSe was demonstrated with an output power of 1400 mW at an absorbed pump power of 1900 mW from a Tm:YAG laser. Under continuous-wave diode pumping at 1.54 μm an output power of 15 mW was obtained from a Cr⁺²:ZnSe laser. Excited state absorption is shown to be negligible in the pump and laser spectral region. Received: 12 October 2000 / Published online: 30 November 2000     

Control of radiation parameters of pulse-periodic tunable diode lasers based on lead salts with double heterostructure

Spectral and power properties of the pulse-periodic tunable diode lasers based on lead salts with double heterostructure grown by MBE are considered. Procedure and criteria of preliminary selection of the laser samples are discussed. Typical characteristics of such lasers are presented. Methods for controlling the spectral and power properties in the pulse mode are considered. General mechanisms of laser wavelength tuning by current and temperature variations are demonstrated on the basis of experimental data. Methods for optimizing these parameters are considered.