The influence of strain-reducing layer on strain distribution and ground state energy levels of GaN/AlN quantum dot

This article deals with the strain distributions around GaN/AlN quantum dots by using the finite element method. Special attention is paid to the influence of Al_0.2Ga_0.8N strain-reducing layer on strain distribution and electronic structure. The numerical results show that the horizontal and the vertical strain components are reinforced in the GaN quantum dot due to the presence of the strain-reducing layer, but the hydrostatic strain in the quantum dot is not influenced. According to the deformation potential theory, we study the band edge modifications and the piezoelectric effects. The result demonstrates that with the increase of the strain reducing layer, the transition energy between the ground state electron and the heavy hole increases. This result is consistent with the emission wavelength blue shift phenomenon observed in the experiment and confirms that the wavelength shifts toward the short wavelength range is realizable by adjusting the structure-dependent parameters of GaN/AlN quantum dot.     

Hydrogenic impurity states in zinc-blende GaN/AlN coupled quantum dots

Based on the effective-mass approximation, we have calculated the donor binding energy of a hydrogenic impurity in zinc-blende (ZB) GaN/AlN coupled quantum dots (QDs) using a variational method. Numerical results show that the donor binding energy is highly dependent on the impurity position and coupled QDs structural parameters. The donor binding energy is largest when the impurity is located at the center of quantum dot. When the impurity is located at the interdot barrier edge, the donor binding energy has a minimum value with increasing the interdot barrier width.     

压力下GaN/Ga1-xAlxN量子点中杂质态的界面效应

考虑界面处导带弯曲,流体静压力以及有效质量随量子点位置的依赖性,采用变分法以及简化相干势近似,研究了无限高势垒GaN/Ga_1-xAl_xN球形量子点中杂质态的界面效应,计算了杂质态结合能随量子点尺寸、电子面密度以及压力的变化关系。结果表明,结合能随压力的增大呈线性增加的趋势,有效质量位置的依赖性以及导带弯曲对结合能有不容忽视的影响。     

Self-organized GaN/AlN hexagonal quantum-dots:strain distribution and electronic structure

This paper presents a finite element method of calculating strain distributions in and around the self-organized GaN/AlN hexagonal quantum dots. The model is based on the continuum elastic theory, which is capable of treating a quantum dot with an arbitrary shape. A truncated hexagonal pyramid shaped quantum dot is adopted in this paper. The electronic energy levels of the GaN/AlN system are calculated by solving a three-dimension effective mass Shrodinger equation including a strain modified confinement potential and polarization effects. The calculations support the previous results published in the literature.     

基于石墨烯的宽带全光空间调制器

提出了单层石墨烯包裹微纳光纤的全光空间调制.石墨烯作为可饱和吸收体包裹在通过二氧化碳激光器加热制备的微纳光纤上,当信号光沿着微纳光纤传输时部分光将以倏逝场的形式沿着微纳光纤表面传递,并与石墨烯产生作用被吸收.同时将波长为808 nm的抽运光从空间垂直入射到石墨烯包裹的微纳光纤处,依据石墨烯的优先吸收特性,通过抽运光控制石墨烯对信号光的吸收,实现了宽带全光空间调制.在1095 nm波长处获得最大调制深度约为6 dB,调制带宽约为50 nm,调制速率约为1.5 kHz.空间全光调制器具有输出信号光“干净”的特点.与传统石墨烯微纳光纤全光调制器相比,输出端不需要对抽运光进行光学滤波而直接获得已调信号.该复合波导全光空间调制器以更为灵活、高效的方式打开了微纳超快信号处理的大门.     

Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes

Rectangular AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) were fabricated, and the gate and the source of the HFETs consisted of AlGaN/AlN/GaN Schottky barrier diodes (SBDs). Based on the measured forward current-voltage and the capacitance-voltage characteristics of the AlGaN/AlN/GaN SBDs, the series resistance under the Schottky contacts (R_S) was calculated using the method of power consumption, which has been proved to be valid. Finally, the method of power consumption for calculating R_S was successfully used to study the two-dimensional electron gas electron mobility for a series of circular AlGaN/AlN/GaN SBDs. It is shown that the series resistance under the Schottky contacts cannot be neglected and is important for analysing and characterizing the AlGaN/AlN/GaN SBDs and the AlGaN/AlN/GaN HFETs.     

0.73～1.7μm超宽带微纳光纤波导全光调制器

提出了单层石墨烯包裹双锥形微纳光纤复合波导结构,构建了730~1 700nm超宽带微纳光纤波导全光调制器。通过火焰拉锥法将一根标准的通信单模光纤拉成具有双锥形的微纳光纤,在保证通光率的前提下可以极大的提升微纳光纤处的倏逝波与物质的相互作用。利用石墨烯的"超级特征",即单原子层厚度、线性色散的能带结构、超强的载流子带间跃迁及极短的弛豫时间和超宽带光与物质相互作用等,将单层石墨烯作为可饱和吸收体,包裹在双锥形微纳光纤波导的锥体上,以增强该复合波导表面倏逝波与石墨烯的相互作用。静态和动态全光调制实验中采用传统808nm低功率LD作为泵浦光,对谱宽为480~1 700nm的超连续谱探测光实现了光光调制,其泵浦光功率低于50mW,调制深度大于5.7dB,调制速率达到~4kHz。该微纳光纤波导全光调制器,在保证调制深度的情况下,用更低的泵浦功率实现了超宽带的全光调制,以简单、有效、廉价的方式兼容了当前高速光纤通信网络,打开了一扇未来对微纳超快光信号处理的大门。     

Ultra-high detectivity room temperature THZ-IR photodetector based on resonant tunneling spherical centered defect quantum dot (RT-SCDQD)

In this paper, a novel structure for THZ-IR photodetector based on resonant tunneling spherical centered defect quantum dot (RT-SCDQD) operating at room temperature is proposed. The proposed structure includes a quantum dot with centered defect following a resonant tunneling double barrier. It is shown that inserting a centered defect leads to considerable enhancement in absorption coefficient at long wavelength in small dot size (1.05 × 10⁶-7.33 × 10⁶ m⁻¹ at 83 μm). This effect guarantees large responsivity of the proposed system for THZ-IR photodetector. In this proposal, intersublevel transitions in related states positioned at mid energies of large conduction-band-offset materials (GaN/AlGaN) are used to depress the thermal effect in dark current. Adding the resonant tunneling double barrier to the quantum dot resolves the basic problem of collecting electrons from deep excited state without applying large bias voltage. Also, employing the RT double barrier reduces the ground state dark current term. Reduction of the dark current and increasing the responsivity yields ultra-high detectivity, 5 × 10¹⁶ and 2.25 × 10⁹ cm Hz^1/2/W at 83 μm, at 83 and 300 K, respectively. Analysis of the proposed structure is done analytically.     

A cascaded traveling-wave electrooptic modulator

A novel configuration for a wide-band and low-drive power electrooptic modulator is proposed. The device is based on the compensation for the velocity difference between the electrical and optical signals by adjusting their relative delay between two succussive modulators. A cascaded traveling-wave optical modulator having a band-width of approximately 3 GHz and a required power of 150 mW for 30% linear modulation has been constructed.     

Theoretical Investigation of Light Transmission in a Slab Cavity via Kerr Nonlinearity of Carbon Nanotube Quantum Dot Nanostructure

In this paper, we discuss the transmission properties of weak probe laser field propagate through slab cavity with defect layer of carbon-nanotube quantum dot (CNT-QD) nanostructure. We show that due to spin-orbit coupling, the double electromagnetically induced transparency (EIT) windows appear and the giant Kerr nonlinearity of the intracavity medium can lead to manipulating of transmission coefficient of weak probe light. The thickness effect of defect layer medium has also been analyzed on transmission properties of probe laser field. Our proposed model may be useful for integrated photonics devices based on CNT-QD for applications in all-optical systems which require multiple EIT effect.     

Ultrafast all optical modulation based on intersubband transition in semiconductor quantum wells

Ultrafast modulation of interband-resonant light by intersubband-resonant light in n-doped GaAs/AlGaAs and GaN/AlGaN quantum wells was investigated by femtosecond pump-probe technique. A planar-type AlGaAs/GaAs modulation device shows a modulation speed of ～1 ps at room temperature. The observed modulation efficiency indicates that 99% modulation can be achieved with a control pulse energy of ～1 pJ when a waveguide-type device structure is utilized. The feasibility of the all-optical modulation in GaN/AlGaN quantum wells is also investigated. The intersubband carrier relaxation time, which mainly determines the modulation speed, is measured and is found to be extremely fast (130–170 fs). The results indicate that the optical modulation at a bit rate of over 1 Tb/s will be possible by utilizing the intersubband transition in GaN/AlGaN quantum wells. The modulation efficiency in GaN/AlGaN quantum wells is also discussed in comparison with that in GaAs/AlGaAs quantum wells.     

氮化物抛物量子阱中类氢杂质态能量

采用变分方法研究氮化物抛物量子阱(GaN/Al_xGa_1-xN)材料中类氢杂质态的能级,给出基态能量、第一激发态能量、结合能和跃迁能量等物理量随抛物量子阱宽度变化的函数关系.研究结果表明,基态能量、第一激发态能量、基态结合能和1s→2p±跃迁能量随着阱宽L的增大而减小,最后接近于GaN中3D值.GaN/Al_0.3Ga_0.7N抛物量子阱对杂质态的束缚程度比GaAs/Al_0.3Ga_0.7As抛物量子阱强,因此,在GaN/Al_0.3-Ga_0.7N抛物量子阱中束缚于杂质中心处的电子比在GaAs/Al_0.3Ga_0.7As抛物量子阱中束缚于杂质中心处的电子稳定.     

Study of isolated cubic GaN quantum dots by low-temperature cathodoluminescence

We report single dot spectroscopy of cubic GaN/AlN self-assembled quantum dots. Typical linewidths of the zero-phonon line between 2 and 8 meV are observed and interpreted in terms of charge fluctuations around a given quantum dot. The phonon sideband contribution in this emission, even at low temperature, reveals the importance of the acoustic phonon broadening mechanism which controls the exciton dephasing and may impose the real limits to the optical properties of GaN single QDs emission.     

Influence of applied electric field on the absorption coefficient and subband distances in asymmetrical AlN/GaN coupled double quantum wells

The influence of applied electric fields on the absorption coefficient and subband distances in asymmetrical AlN/GaN coupled double quantum wells (CDQWs) has been investigated by solving Schr?dinger and Poisson equations self-consistently. It is found that the absorption coefficient of the intersubband transition (ISBT) between the ground state and the third excited state (1_odd-2_even) can be equal to zero when the electric fields are applied in asymmetrical AlN/GaN CDQWs, which is related to applied electric fields induced symmetry recovery of these states. Meanwhile, the energy distances between 1_odd-2_even and 1_even-2_even subbands have different relationships from each other with the increase of applied electric fields due to the different polarization-induced potential drops between the left and the right wells. The results indicate that an electrical-optical modulator operated within the opto-communication wavelength range can be realized in spite of the strong polarization-induced electric fields in asymmetrical AlN/GaN CDQWs.     

Recent Advances of Light Propagation in Surface Plasmon Enhanced Quantum Dot Devices

Surface plasmons are of particular interest recently as their performance is approaching the enhancement of light emission efficiencies, after synthesized close to the vicinity of solid state materials, i.e., semiconductor structure. As other scientific works have been proposed to improve the light-emitting efficiency, such as the use of resonant cavities, photon recycling, and thin-light emitting layers with periodic surface texturing, surface plasmon possesses a promising way to the light enhancement, due to the energy coupling effect between the emitted photons from the semiconductor and the metallic nanoparticles fabricated by nanotechnology. The usual pathway of plasmon enhanced light emitting devices is the use of Ag/Au nanoparticles coating the surface of semiconductor quantum dot (QD) or quantum well (QW) structures. However, apart from efforts to extract as much light as possible from single-driven surface plasmon-QD/QW, it is possible to enhance the light emission rate with double optical-excitations. This approach is based on the quantum interference between the external lasers and the localized quantum light, and promised to stimulate the development of plasmon-enhanced optical sensors. In this review, we describe the quantum properties of light propagation in hybrid nanoparticle and semiconductor materials, i.e., quantum dot or nanomechanical resonator coupled to Ag/Au nanoparticles, driven by two optical fields. Distinct with single excitation, plasmon-assisted complex driven by two optical fields, exhibit specific quantum interference characteristics that can be used as sensitive all-optical devices, such as the slow light switch, nonlinear optical Kerr modulator, and ultra-sensitive mass sensing. We summarize the recent advances of light propagation in surface plasmon-enhanced quantum dot devices, driven by two optical fields, which would stimulate the development of novel optical materials, deeper theoretical insights, innovative new devices, and plasmonic applications with potential for significant technological and societal impact.     

Incoherent control of optical bistability in an InGaN/GaN quantum dot nanostructure

The manipulation of bistable curve in the infrared (IR) region has been investigated theoretically in a unidirectional ring cavity doped by a four-level InGaN/GaN quantum dot nanostructure. The four-level quantum dot nanostructure is designed numerically by using the Schrödinger and Poisson equations. By controlling the size of the quantum dot and external voltage, one can design a four-level quantum dot with appropriate energy levels which can be suitable for interaction with IR signals. It is realized that the incoherent pumping fields play an essential role in controlling the intensity threshold of optical bistability. Decoherence effects such as the dephasing rate and electron density of the quantum dot are also analyzed at the threshold of optical bistability. Our proposed model due to its important application in all-optical systems may be favorable for real experimental evolution in infrared regions.     

Optical properties of GaN/AlN multiple quantum wells

Optical properties of GaN/AlN multiple quantum wells (MQW) have been investigated by Raman scattering, photoluminescence and photoluminescence excitation measurements. A careful examination of the Raman spectrum reveals the fact that the constituent layers of GaN/AlN MQWs are well strained. The experimental results of emission and absorption in MQWs were compared with the calculated solutions of the finite quantum well and the bound states involved in the optical transitions were identified. It is found that the interband transitions up to n=3 bound state can be observed in the strained GaN/AlN MQWs sample. The temperature dependence of the heavy-hole transitions shows an interesting phenomenon, in which the peak energy first increases with increasing temperature and then decreases with the temperature rapidly. The observation can be explained in a consistent way by the strain effects of lattice mismatch due to the interplay between the thermal expansion of GaN and AlN layers. Our results indicate that pseudomorphic GaN/AlN MQWs with good quality can be readily grown, and their applications in optoelectronics can be expected in the near future.     

The microstructure of vertically coupled quantum dots ensembles by EXAFS spectroscopy

The microstructure of samples containing Ge/Si, GaN/AlN, and InAs/AlAs (Ge, GaN, and InAs quantum dots (QDs) in the Si, AlN, and AlAs matrices, respectively) multilayer heterostructures has been investigated by EXAFS spectroscopy. The effect of the effective thicknesses of Si (or AlN) barrier layers, number of Ge (or GaN) layers in a sandwich, and annealing temperature on the size and shape of Ge (or GaN) clusters, interfacial diffusion in these systems, and formation of three-dimensional ordered ensembles of QDs has been established.     

Optical bistability in a defect slab with a negative refractive quantum dot nanostructure

We demonstrate optical bistability (OB) in a defect slab doped V-type four-level InGaN/GaN quantum dot nanostructure in the negative refraction frequency band. It has been shown that the OB behavior of such a quantum dot nanostructure system can be controlled by the amplitude of the driving fields and a new parameter for controlling the OB behavior as thickness of the slab medium in the negative refraction band. Meanwhile, we show that the negative refraction frequency band can be controlled by tuning electric permittivity and magnetic permeability by the amplitude of the driving fields and electron concentration in the defect slab doped. Under the numerical simulations, due to the effect of quantum coherence and interference, it is possible to switch bistability by adjusting the optimal conditions in the negative refraction frequency band, which is more practical in all-optical switching or coding elements, and technology based nanoscale devices.