Generation of 7.8 W at 355 nm from an efficient and compact intracavity frequency-tripled Nd:YAG laser

A high power, quasi-continuous wave ultraviolet laser at 355 nm was obtained by intracavity frequency tripling of a diode side-pumped acousto-optic (AO) Q-switched Nd:YAG laser. Type II critical phase-matched KTP and LBO crystals were used for the second harmonic generation and the third harmonic generation, respectively. Under the pump power of 180 W, 7.8 W average output power at 355 nm was obtained at 8 kHz with the pulse width of 50 ns, corresponding to the pump-to-ultraviolet conversion efficiency of 4.3%. The peak power and single pulse energies were estimated to be 18.8 kW and 938 μJ. Its far-field divergence was measured to be about 3.8 mrad. The instability of the 355 nm laser was less than 1% at an output power of 6.3 W for 2 h operation.     

An efficient and compact laser-diode end-pumped intracavity frequency-tripled Nd: YVO4 355 nm laser

By exploiting the intracavity frequency conversion configuration, a diode end-pumped acousto-optic (AO) Q-switched Nd:YVO₄ 355 nm laser was demonstrated in this paper. Two LBO crystals were inserted in the cavity to realize the frequency tripling operation, a cascade of the second harmonic generation (SHG) and sum frequency mixing (SFM). Under the absorbed pump power of 13 W, the maximum average output power at 355 nm was obtained to be 1.32 W at the repetition frequency of 17 kHz, with the optical-to-optical conversion efficiency of 10.2%. The corresponding pulse width was 10.2 ns, with the energy of a single pulse and corresponding peak power estimated to be 77.6 μJ and 7.61 kW, respectively.     

Modifications of AISI 1045 steel by picosecond Nd:YAG laser at 266 nm; comparison with 532 and 1064 nm pulses

Interaction of Nd:YAG laser, operating at 266 nm wavelength and a pulse duration of 40 ps, with AISI 1045 steel was studied. Surface damage threshold was estimated to be 0.14 J/cm². The steel surface modification was studied at the laser fluence of ∼1.0 J/cm². The energy absorbed from Nd:YAG laser beam is partially converted to thermal energy, which generates a series of effects, such as melting, vaporization of the molten material, shock waves, etc. The following AISI 1045 steel surface morphological changes and processes were observed: (i) intensive damage of the target in the central zone of irradiated area; (ii) appearance of periodic surface structures at nano-level, with periodicity in agreement with the used wavelength; (iii) reduction of oxygen concentration in irradiated area; and (iv) development of plasma in front of the target. Generally, interaction of laser beam with AISI 1045 steel (at 266 nm) results in a near-instantaneous creation of damage, meaning that large steel surfaces can be modified in short times.     

355 nm皮秒激光辐照下熔石英的损伤特性

利用光学元件激光损伤测试平台,测试了355 nm皮秒激光辐照下熔石英光学元件的初始损伤及损伤增长情况,并通过荧光检测分析了损伤区缺陷。研究结果表明：皮秒激光较高的峰值功率导致熔石英损伤阈值较低,前表面损伤阈值为3.98 J/cm2,后表面损伤阈值为2.91 J/cm2;前后表面损伤形貌存在较大差异,后表面比前表面损伤程度轻且伴随体内丝状损伤;随脉冲数的增加后表面损伤直径增长缓慢,损伤深度呈线性增长;皮秒激光的动态自聚焦和自散焦导致熔石英体内损伤存在细丝和炸裂点重复的现象;与纳秒激光损伤相比,损伤区缺陷发生明显改变。     

酸蚀深度对熔石英三倍频激光损伤阈值的影响

 采用干涉仪和台阶仪测试蚀刻深度随时间的变化,结合材料去除速率测量,研究了HF酸蚀液对熔石英表面蚀刻的影响。测试了蚀刻后损伤阈值和表面粗糙度的变化。研究表明,熔石英表面重沉积层厚度约16 nm,亚表面缺陷层大于106 nm;重沉积层去除后损伤阈值增大,随亚表面缺陷层暴露其阈值先降低后又增加,最后趋于稳定;然而,随蚀刻时间的增加,其表面粗糙度增大。分析表明,蚀刻到200 nm能有效地提高熔石英的低损伤阈值,有利于降低初始损伤点数量和提高熔石英表面的机械强度。     

AFM images of G1-phase premature condensed chromosomes: Evidence for 30 nm changed to 50 nm chromatin fibers

To gain evidence for 30 nm changed to 50 nm chromatin fibers, we used atomic force microscopy (AFM) to study the ultrastructural organization of G₁-phase premature condensed chromosomes (PCC). The surface of early G₁-phase PCC is smooth and fibrous structures exist around the chromatids. The height of early G₁-phase PCC is about 410 nm and the width is 1.07 ± 0.11 μm (n = 30). At late G₁-phase, the surface becomes globular. The height of late G1-phase PCC is about 370 nm and the width is 845.04 ± 82.84 nm (n = 30). Phase image reveals that early G₁-phase PCC is composed of 50 nm (48.91 ± 6.63 nm, n = 30) chromatin fibers and these 50 nm chromatin fibers tangle together, while late G₁-phase PCC is composed of 30 nm (30.96 ± 4.07 nm, n = 30) chromatin fibers. At high magnification, fibers existing around the chromatids become clear in early G₁-phase PCC. Chromatin fibers revealed by closer view of the end of chromatid are about 50 nm. In late G₁-phase PCC, the surface presents globular structures. The shape of these globular structures is regular and the diameter is 118.96 ± 11.70 nm (n = 30). Our results clearly show that 30 nm chromatin fibers change to 50 nm chromatin fibers in G₁-phase PCC and suggest that 50 nm chromatin fibers are the basic component of the mitotic chromosomes.     

Sapphire (0 0 0 1) surface modifications induced by long-pulse 1054 nm laser irradiation

We have investigated modifications of sapphire (0 0 0 1) surface with and without coating, induced by a single laser pulse with a 1054 nm wavelength, 2.2 s duration, 7.75 mm spot and energy of 20-110 J. A holographic optical element was used for smoothing the drive beam spatially, but it induced small hotspots which initiated damage on the uncoated and coated surfaces. The individual damage effects of hotspots became less pronounced at high fluences. Due to high temperature and elevated non-hydrostatic stresses upon laser irradiation, damage occurred as fracture, spallation, basal and rhombohedral twinning, melting, vitrification, the formation of nanocrystalline phases, and solid-solid phase transition. The extent of damage increased with laser fluences. The formation of regular linear patterns with three-fold symmetry ( directions) upon fracture was due to rhombohedral twinning. Nanocrystalline -Al₂O₃ formed possibly from vapor deposition on the coated surface and manifested linear, triangular and spiral growth patterns. Glass and minor amounts of -Al₂O₃ also formed from rapid quenching of the melt on this side. The - to -Al₂O₃ transition was observed on the uncoated surface in some partially spalled alumina, presumably caused by shearing. The nominal threshold for laser-induced damage is about 47 J cm⁻² for these laser pulses, and it is about 94 J cm⁻² at the hotspots.     

Surface quantum well state at the striped Cu(1 1 0)(2 × 1)O surface studied by angle resolved photoemission spectroscopy

We have performed an angle resolved photoemission spectroscopy with high energy and high momentum resolutions and have observed the k dependent energy dispersion curves of the striped Cu(1 1 0)(2 × 1)O surface. It is found that the Shockley surface state electron is confined in the clean surface along the perpendicular direction to the stripes and forms a quantum well state (QWS). It has also been clearly observed that an electron of Cu-O antibonding state is confined within the oxygen covered surface.     

CO oxidation over Ru(0 0 0 1) at near-atmospheric pressures: From chemisorbed oxygen to RuO2

RuO₂(1 1 0) was formed on Ru(0 0 0 1) under oxygen-rich reaction conditions at 550 K and high pressures. This phase was also synthesized using pure O₂ and high reaction temperatures. Subsequently the RuO₂ was subjected to CO oxidation reaction at stoichiometric and net reducing conditions at near-atmospheric pressures. Both in situ polarization modulation infrared reflection absorption spectroscopy (PM-IRAS) and post-reaction Auger electron spectroscopy (AES) measurements indicate that RuO₂ gradually converts to a surface oxide and then to a chemisorbed oxygen phase. Reaction kinetics shows that the chemisorbed oxygen phase has the highest reactivity due to a smaller CO binding energy to this surface. These results also show that a chemisorbed oxygen phase is the thermodynamically stable phase under stoichiometric and reducing reaction conditions. Under net oxidizing conditions, RuO₂ displays high reactivity at relatively low temperatures (?450 K). We propose that this high reactivity involves a very reactive surface oxygen species, possibly a weakly bound, atomic oxygen or an active molecular O₂ species. RuO₂ deactivates gradually under oxidizing reaction conditions. Post-reaction AES measurements reveal that this deactivation is caused by a surface carbonaceous species, most likely carbonate, that dissociates above 500 K.     

Scanning tunneling microscopy luminescence from nanoscale surface of GaAs(1 1 0)

Scanning tunneling microscopy luminescence (STML) was induced from the nanometer scale surfaces of cleaved n-type and p-type GaAs(1 1 0) wafers by using of an ITO-coated optical fiber probe in an ultrahigh-vacuum chamber. The STML from n-type GaAs(1 1 0) surface was induced under negative sample bias when the applied bias exceeds a threshold voltage around −1.5 V. Whereas the STML from p-type GaAs(1 1 0) surface was induced under positive sample bias when the applied bias exceeds a threshold voltage around +1.5 V. The excitation energies at the threshold voltages are consistent with the band gap of GaAs (1.42 eV) at 295 K. The typical quantum efficiencies for n-type and p-type GaAs are about 3 × 10⁻⁵ and 2 × 10⁻⁴ photons/electron, respectively. The observed STML from are attributed to a radiative recombination of electron-hole pairs generated by a hole injection for n-type GaAs under negative sample bias and an electron injection for p-type GaAs under positive sample bias, respectively.     

Diode-pumped passively Q-switched 912 nm Nd:GdVO4 laser and pulsed deep-blue laser by intracavity frequency-doubling

A diode-end-pumped passively Q-switched 912 nm Nd:GdVO₄/Cr⁴⁺:YAG laser and its efficient intracavity frequency-doubling to 456 nm deep-blue laser were demonstrated in this paper. Using a simple V-type laser cavity, pulsed 912 nm laser characteristics were investigated with two kinds of Cr⁴⁺:YAG crystal as the saturable absorbers, which have the different initial transmissivity (T_U) of 95% and 90% at 912 nm. When the T_U = 95% Cr⁴⁺:YAG was used, as much as an average output power of 2.8 W 912 nm laser was achieved at an absorbed pump power of 34.0 W, and the pulse width and the repetition rate were ∼ 40.5 ns and ∼ 76.6 kHz, respectively. To the best of our knowledge, this is the highest average output power of diode-pumped passively Q-switched Nd³⁺-doped quasi-three-level laser. Employing a BiBO as the frequency-doubling crystal, 456 nm pulsed deep-blue laser was obtained with a maximum average output power of 1.2 W at a repetition rate ∼ 42.7 kHz.     

Layer-resolved photoelectron diffraction from Si(0 0 1) and GaAs(0 0 1)

Photoelectron diffraction in the layer-resolved mode brings more detailed information about local atomic arrangement than is obtained in the standard mode. This is demonstrated in crystals with diamond and zinc-blende structures, both for unpolarized photon excitation as well as for circularly polarized excitation. The full angular distributions of photoemission intensities are evaluated for large atomic clusters representing ideally truncated surfaces of Si(0 0 1) and GaAs(0 0 1). Highly structured layer-resolved patterns enable a more detailed understanding of the standard mode outcomes. Photoelectron intensities from atomic layers placed at different depths under the crystal surface provide direct evidence about electron attenuation and its anisotropy in crystals.     

The growth of manganese layers on Si(1 0 0) at room temperature: A photoelectron spectroscopy study

The combination of spin-and charge based electronics in future devices requires the magnetic doping of group IV semiconductors, and the formation of ferromagnetic contacts. The doping of Mn with Si is one of the material systems which is discussed in this context. The present study focuses on the growth of Mn on a Si(100)(2x1) surface, and the evolution of the surface was observed as a function of Mn coverage with synchrotron-based photoelectron spectroscopy. The reaction of Mn with the Si(100) surface at room temperature leads the formation of silicide at the boundary between the Si substrate and the Mn-overlayer, presumably with MnSi stoichiometry. The residual sub-oxide reacts with the Mn and therefore incorporates a few percent of Mn-O-Si at the interface. The analysis of the sub-oxide composition indicates that the Si⁺¹ component is the most reactive oxidation state. The overlayer is dominated by Mn, either as Mn-metal or as a Mn-rich silicide phase, and the metallic layer introduces a band bending in Si. As a consequence of our observations, including information from a recent STM study, the formation of ferromagnetic contacts which require ideally a flat and compositionally homogenous overlayer, cannot be achieved through room temperature deposition of Mn on the Si(100) (2x1) surface. The influence of residual oxides and surface defects on the growth process will be further investigated.     

The damage mechanism of fused silica surface induced by 355 nm nanosecond laser

In order to understand the physical mechanism, time-resolved dynamics of 355 nm nanosecond laser induced entrance and exit surface damage on fused silica was investigated by using shadow graphic technique. The results show that the damage mechanism is different between the entrance and exit surface during nanosecond laser interaction with fused silica. The plasma and shock waves in air is relatively higher at the entrance surface. The entrance surface damage is reduced because plasma shielding limits energy deposition. Without plasma shielding, the exit surface damage is more serious for more laser energy deposition in material. And without the stress of plasma and shock waves, the material is ejected easily at rear surface. These are confirmed by damage micrograph at the entrance and exit surface.     

Structural analysis of the c(4 × 2) reconstruction in Si(0 0 1) and Ge(0 0 1) surfaces by low-energy electron diffraction

The c(4 × 2) structures in (0 0 1) surfaces of Si and Ge have been studied by low-energy electron diffraction (LEED). Using a proper cleaning method for the Si surface, we were able to observe clear c(4 × 2) LEED patterns up to incident energy of ∼400 eV as well as the Ge surface. Extensive experimental intensity-voltage curves allowed us to optimize the asymmetric dimer model up to the eighth layer (including the dimer layer) in depth in the dynamical LEED calculation. Optimized structural parameters are almost the same for the Si and Ge except for the height of the buckled-up atom of the asymmetric dimer. For the Ge surface, the structural parameters are in excellent agreement with those obtained by a previous theoretical calculation. The tilt angle and bond length of the dimer are 18 ± 1 (19 ± 1)° and 2.4 ± 0.1 (2.5 ± 0.1) Å for the Si(0 0 1) (Ge(0 0 1)), respectively.     

355 nm激光作用下熔石英损伤增长

 用355 nm脉冲激光分别辐照位于熔石英前后表面的损伤点,用Mias软件采集了损伤增长的图像并测量了每脉冲辐照后损伤点的面积。实验结果表明：位于熔石英样片后表面的损伤点面积随激光辐照脉冲数呈指数增长关系,而位于前表面的损伤点面积与激光辐照脉冲次数呈线性增长关系。     

High resolution X-ray photoelectron spectroscopy study on initial oxidation of 4H-SiC(0 0 0 1)-(√3 × √3)R30° surface

An initial oxidation dynamics of 4H-SiC(0 0 0 1)-(√3 × √3)R30° surface has been studied using high resolution X-ray photoelectron spectroscopy and supersonic molecular beams. Clean 4H-SiC(0 0 0 1)-(√3 × √3)R30° surface was exposed to oxygen molecules with translational energy of 0.5 eV at 300 K. In the first step of initial oxidation, oxygen molecules are immediately dissociated and atomic oxygens are inserted into Si-Si back bonds to form stable oxide species. At this stage, drastic increase in growth rate of stable oxide species by heating molecular beam source to 1400 K was found. We concluded that this increase in growth rate of stable oxide is mainly caused by molecular vibrational excitation. It suggests that the dissociation barrier is located in the exit channel on potential energy hypersurface. A metastable molecular oxygen species was found to be adsorbed on a Si-adatom that has two oxygen atoms inserted into the back bonds. The adsorption of the metastable species is neither enhanced nor suppressed by molecular vibrational excitation.     

Temperature dependent quantum well state on Cu(1 1 0)(2 × 1) striped surface studied by angle resolved photoelectron spectroscopy

We have investigated the temperature dependence of angle resolved photoelectron spectroscopy for the lateral quantum well states (QWS) on the striped Cu(1 1 0)(2 × 1)O surface. For the striped surface with oxygen coverage of 0.25 ML, we have successfully observed two discrete levels along a perpendicular direction to the stripes in the surface Brillouin zone, which is generated by quantization of the Shockley surface state. We have found that the relative photoelectron intensity of the two discrete levels depends on the temperature. The photoelectron intensity tends to concentrate on the ground level of the QWS with decreasing temperature. Our investigation indicates that the electron population of each quantum well level depends on the temperature.     

Olefin bonding mechanism and growth to (1 0 0)(2 × 1):H diamond

The bonding and growth mechanism of photochemically attached olefin molecules to (1 0 0)(2 × 1):H diamond is characterized using atomic force (AFM) and scanning tunneling microscopy (STM) experiments in combination with molecular orbital calculations. To identify growth schemas, diamond surfaces after 10, 40 and 90 min of photo-chemically stimulated growth have been characterized. These data show clearly island formation which is discussed taking into account a growth model from silicon. The island growth shows no directional properties which are attributed to arrangement and geometrical properties of hydrogen terminated carbon bonds at the surface of (1 0 0) oriented (2 × 1) reconstructed diamond.     

Vibrationally-assisted dissociative adsorption of oxygen on Ru(0 0 0 1)-p(2 × 1)-O

Supersonic molecular beam technique combined with high resolution X-ray photoelectron spectroscopy using synchrotron radiation was applied to the study of the dynamics of dissociative adsorption of oxygen on Ru(0 0 0 1) surface in high coverage region. The Ru(0 0 0 1) surface pre-covered with oxygen atoms of 0.5 monolayer, which corresponds to the p(2 × 1)-O structure, was dosed to oxygen molecules with translational energy of 0.5 eV. Oxygen uptake was compared between the cases with and without the beam source heated in order to verify the effects of internal energy of oxygen. We found drastic enhancement in initial sticking probability of oxygen when the beam source was heated to 1400 K. We concluded that the enhancement of sticking probability is mainly caused by molecular vibrational excitation, indicating that dissociation barrier is located in the exit channel on potential energy surface.