Luminescence properties of β-FeSi2 and its application to photonics

We have investigated the photoluminescence properties of β-FeSi₂ and have subsequently reported many studies on the enhancement of luminescence efficiency. We have further discussed a limit for the luminescence efficiency based on the weak confinement theory of excitons in β-FeSi₂ nanocrystals. Moreover, we have reported an application of β-FeSi₂ with a high refractive index to photonic crystals.     

A comparison of electronic structure and optical properties between N-doped β-Ga2O3 and N-Zn co-doped β-Ga2O3

The electronic structure and optical properties of N-doped β-Ga₂O₃ and N-Zn co-doped β-Ga₂O₃ are investigated by the first-principles calculation. In the N-Zn co-doped β-Ga₂O₃ system, the lattice parameters of a, b, c, V decrease and the formation energy of N-Zn co-doped β-Ga₂O₃ is smaller in comparison with N-doped β-Ga₂O₃. There are two shallower acceptor impurity levels in N-Zn co-doped β-Ga₂O₃. Comparing with N-doped β-Ga₂O₃, the major absorption peak is red-shifted and the impurity absorption edge is blue-shifted for N-Zn co-doped β-Ga₂O₃. The results show that the N-Zn co-doped β-Ga₂O₃ is found to be a better method to push p-type conductivity in β-Ga₂O₃.     

Electrical properties and emission mechanisms of Zn-doped β-Ga2O3 films

We study the electrical properties and emission mechanisms of Zn-doped β-Ga₂O₃ film grown by pulsed laser deposition through Hall effect and cathodoluminescence which consist of ultraviolet luminescence (UV), blue luminescence (BL) and green luminescence (GL) bands. The Hall effect measurements indicate that the carrier concentration increases from 7.16×10¹¹ to 6.35×10¹² cm⁻³ with increasing a nominal Zn content from 3 to 7 at%. The UV band at 272 nm is not attributed to Zn dopants and ascribed as radiative electron transition from conduction band to a self-trapped hole while the BL band is attributable to defect level related to Zn dopant. The BL band has two emission peaks at 415 and 455 nm, which are ascribed to the radiative electron transition from oxygen vacancy (V_O) to valence band and recombination of a donor–acceptor pair (DAP) between V_O donor and Zn on Ga site (Zn_Ga) acceptor, respectively. The GL band is attributed to the phonon replicas’ emission of the DAP. The acceptor level of Zn_Ga is estimated to be 0.26 eV above the valence band maximum. The transmittance and absorption spectra prove that the Zn-doped β-Ga₂O₃ film is a dominantly direct bandgap material. The results of Hall and cathodoluminescence measurements imply that the Zn dopant in β-Ga₂O₃ film will form an acceptor Zn_Ga to produce p-type conductivity.     

Stability and electronic properties of carbon in α-Al2O3

The stability and electronic properties of carbon in α-Al₂O₃ are investigated using density functional theory. In the host lattice, the substitutional C prefers the Al site under the O-rich conditions, whereas the O site is preferred by carbon under the Al-rich conditions. The calculated results predict a direct relationship between the thermodynamic and optical transition levels with the degree of the local distortion induced by C in the alumina lattice. We also find C at the O site acts as a charge compensator to stabilize the F⁺ center, thereby enhancing the TL signal at 465 K. Also, C at Al site can serve as electron traps for TL emission process in α-Al₂O₃.     

Structure and photoluminescence of β-Ga2O3:Eu nanofibers prepared by electrospinning

Eu³⁺-doped β-Ga₂O₃ nanofibers were fabricated by electrospinning. The influence of Eu³⁺ concentration on the photoluminescence properties of the obtained nanofibers was investigated. The morphology and structure of β-Ga₂O₃:Eu³⁺ were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD) and Raman spectra. The diameter of the Eu³⁺-doped β-Ga₂O₃ nanofibers was in the range of 180-300 nm. When the β-Ga₂O₃:Eu³⁺ nanofibers were excited by 325 nm wavelength, the main emission peak of the samples was 620 nm (⁵D₀→⁷F₂), which corresponded to a typical red emission (⁵D₀→⁷F_j (j = 1, 2, 3, 4) intra-4f transitions of Eu³⁺ ions). In addition, the concentration quench effect and energy transfer mechanism in β-Ga₂O₃:Eu³⁺ were also discussed.     

Investigation of structural,physical and optical properties of CeO2–Bi2O3–B2O3 glasses

xCeO₂–30Bi₂O₃–(70−x) B₂O₃ glasses are synthesized by using the melt quench technique. A number of studies such as XRD, density, molar volume, optical band gap, refractive index and FTIR spectroscopy are employed to characterize the glasses. The band gap decreases from 2.15 to 1.61 eV, refractive index increases from 2.67 to 2.93 and density increases from 4.151 to 4.633 g/cm³. The decrease in band gap with CeO₂ doping approaches the semiconductor behavior. FTIR spectroscopy reveals that incorporation of CeO₂ into glass network helps to convert the structural units of [BO₃] into [BO₄] and results in Bi–O bond vibration of [BiO₆].     

Strain-enhanced polarization sensitivity in β-Ga2O3 photodetector

Polarization-sensitive photodetection and imaging have great application value in fields such as polarization division multiplexing optical communication, remote sensing, near-field imaging and military monitoring. Pursuing a high polarization ratio has always been the research hotspot in polarization-sensitive photodetectors. In this paper, we report a compression strain enhanced polarization ratio in β-gallium oxide(β-Ga₂O₃) single crystal flake. A rigorous crystallograph...     

Synthesis and characterization of β-Ga2O3 nanorods

A novel method was applied to prepare β-Ga₂O₃ nanorods. In this method, β-Ga₂O₃ nanorods have been successfully synthesized on Si(1 1 1) substrates through annealing sputtered Ga₂O₃/Mo films under flowing ammonia at 950 °C in a quartz tube. The as-synthesized nanorods are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM) and Fourier transform infrared spectroscopy (FTIR). The results show that the nanorod is single-crystalline Ga₂O₃ with monoclinic structure. The β-Ga₂O₃ nanorods are straight and smooth with diameters in the range of 200-300 nm and lengths typically up to several micrometers. The growth process of the β-Ga₂O₃ nanorods is probably dominated by conventional vapor-solid (VS) mechanism.     

Influence of hydrothermally modified γ-Al2O3 on the properties of NiMo/γ-Al2O3 catalyst

The influence of hydrothermal modification of γ-Al₂O₃ on the properties of NiMo/γ-Al₂O₃ catalyst was investigated in this paper. The experimental results showed that the use of the modified γ-Al₂O₃ in the preparation of the NiMo/γ-Al₂O₃ catalyst led to the increase of the dispersion of the surface Mo and Ni oxides, favored the formation of the poly-molybdates and promoted the reduction of the active Mo oxides owing to the increase of the surface acidity of the modified γ-Al₂O₃. Therefore, the NiMo/γ-Al₂O₃ catalyst supported on the modified γ-Al₂O₃ exhibited a higher hydrodenitrogenation (HDN) activity than that supported on the untreated γ-Al₂O₃ in the temperature range of 300-340 °C.     

Rheological properties of a γ-Fe2O3 paraffin-based ferrofluid

A stable γ-Fe₂O₃ paraffin-based ferrofluid was prepared via high energy milling. The magnetic particles were characterized using X-ray diffraction, dynamic light scattering and vibrating sample magnetometer techniques. The rheological properties of the ferrofluid were studied using a standard rotating rheometer. The magnetoviscous effect and thixotropy in the ferrofluid were studied. The formation and destruction of magnetically induced structures and the interactions of nanoparticles and aggregates are discussed.     

Electronic and thermodynamic properties of α-Pu2O3

Based on density functional theory+U$\text{density functional theory}+U$ calculations and the quasi-annealing simulation method, we obtain the ground electronic state for α-Pu₂O₃ and present its phonon dispersion curves as well as various thermodynamic properties, which have seldom been theoretically studied because of the huge unit cell. We find that the Pu–O chemical bonding is weaker in α-Pu₂O₃ than in fluorite PuO₂, and subsequently a frequency gap appears between oxygen and plutonium vibration density of states. Based on the calculated Helmholtz free energies at different temperatures, we further study the reaction energies for Pu oxidation, PuO₂ reduction, and transformation between PuO₂ and α-Pu₂O₃. Our reaction energy results are in agreements with available experiment. And it is revealed that high temperature and insufficient oxygen environment are in favor of the formation of α-Pu₂O₃.     

Optical and electrical properties of Sb-doped β-Ga2O3 crystals grown by OFZ method

Sb-doped β-Ga₂O₃ crystals were grown using the optical floating zone(OFZ) method.X-ray diffraction data and X-ray rocking curves were obtained,and the results revealed that the Sb-doped single crystals were of high quality.Raman spectra revealed that Sb substituted Ga mainly in the octahedral lattice.The carrier concentration of the Sb-doped single crystals increased from 9.55 × 10¹⁶ to 8.10 × 10¹⁸ cm^-3,the electronic mobility depicted a dec...     

Temperature dependence of persistent luminescence in β-irradiated SrAl2O4:Eu, Dy phosphor

SrAl₂O₄:Eu²⁺, Dy³⁺ is a phosphor characterized by a long persistent luminescence (PLUM) when excited with UV-vis light and ionizing radiation exhibiting intensity variation in the 10-320 K temperature range and maximum intensity around 320 K. In this work, we study the PLUM behavior of SrAl₂O₄:Eu²⁺, Dy³⁺ as a function of temperature from room temperature to 670 K in samples exposed to β irradiation. The room-temperature irradiation followed by PLUM readout revealed an integrated PLUM maximum at 323 K decreasing later. In contrast, irradiation and PLUM readout at temperatures above room temperatures produced integrated PLUM intensities maxima around 425 and 625 K. Successive cycles of preheating followed by irradiation and PLUM readout produced an increasing of the PLUM intensity as a function of cycle number. The observed phenomenon was ascribed to trapped electrons at the multiple trapping states related to the 425 and 625 K defects levels and electron transfer from one trap to another (electron hopping). Eventually, there is a return to the 5d level of Eu³⁺ cations with the characteristic PLUM emission by thermal energy supplied at room temperature (lattice vibrations) or by a preheating-irradiation-readout cycle. This property may allow keeping up the PLUM properties of SrAl₂O₄:Eu²⁺, Dy³⁺ phosphors through background radiation self exposure and adequate heating processes.     

Antiferromagnetic transition and electrical conductivity in α-Gd2S3

Magnetic susceptibility and electrical resistivity of α-Gd₂S₃ with an orthorhombic structure (space group: Pnma) have been measured for powder and single-crystal samples. While the magnetic susceptibility of powder sample exhibits a broad peak having a maximum at 4.2 K, the susceptibility for a single crystal with an applied magnetic field along the b-axis demonstrates a sharp drop below 10 K. Nevertheless, the susceptibility with the field perpendicular to the b-axis keeps increasing with decreasing temperature even below 10 K. The electrical resistivity ρ for the powder sample of 4.2×10³ Ω cm around room temperature increases with decreasing temperature and shows a slight discontinuity at about 65 K. In both regions above and below 65 K, is proportional to T^−1/4 with respective coefficients, which is associated with Mott variable-range hopping conductivity. The resistivity of a single crystal along the b-axis is considerably smaller than the value for the powder sample as 0.35 Ω cm at room temperature, and its temperature dependence is fairly weak. While cooling, the resistivity first decreases down to 240 K and then keeps the value independent of the temperature down to 140 K, and subsequently rises gently below 140 K.     

Synthesis and properties of Au-Fe3O4 and Ag-Fe3O4 heterodimeric nanoparticles

Monodisperse Au-Fe 3 O 4 heterodimeric nanoparticles (NPs) were prepared by injecting precursors into a hot reaction solution.The size of Au and Fe 3 O 4 particles can be controlled by changing the injection temperature.UV-Vis spectra show that the surface plasma resonance band of Au-Fe 3 O 4 heterodimeric NPs was evidently red-shifted compared with the resonance band of Au NPs of similar size.The as-prepared heterodimeric Au-Fe 3 O 4 NPs exhibited superparamagnetic properties at room temperature.The Ag-Fe 3 O 4 heterodimeric NPs were also prepared by this synthetic method simply using AgNO 3 as precursor instead of HAuCl 4.It is indicated that the reported method can be readily extended to the synthesis of other noble metal conjugated heterodimeric NPs.     

Effects of N-doping concentration on the electronic structure and optical properties of N-doped β-Ga2O3

The electronic structures and the optical properties of N-doped β-Ga2O3 with different N-doping concentrations are studied using the first-principles method.We find that the N substituting O（1） atom is the most stable structure for the smallest formation energy.After N-doping,the charge density distribution significantly changes,and the acceptor impurity level is introduced above the valence band and intersects with the Fermi level.The impurity absorption edges appear to shift toward longer wavelengths with an increase in N-doping concentration.The complex refractive index shows metallic characteristics in the N-doped β-Ga2O3.     

Growth of β-Ga2O3 nanorods by ammoniating Ga2O3/V thin films on Si substrate

This paper reports that/3-Ga2O3 nanorods have been synthesized by ammoniating Ga2O3 films on a V middle layer deposited on Si（111） substrates. The synthesized nanorods were confirmed as monoclinic Ga2O3 by x-ray diffraction,Fourier transform infrared spectra. Scanning electron microscopy and transmission electron microscopy reveal that the grown β-Ga2O3 nanorods have a smooth and clean surface with diameters ranging from 100 nm to 200 nm and lengths typically up to 2μm. High resolution TEM and selected-area electron diffraction shows that the nanorods are pure monoclinic Ga2O3 single crystal. The photoluminescence spectrum indicates that the Ga2O3 nanorods have a good emission property. The growth mechanism is discussed briefly.     

First-principles calculations on the electronic and vibrational properties of β-V2O5

Using a first-principles approach based on density functional theory,this paper studies the electronic and dynamical properties of β-V2O5.A smaller band gap and much wider split-off bands have been observed in comparison with αV2O5.The Ramanand infrared-active modes at the Γ point of the Brillouin zone are evaluated with LO/TO splitting,where the symbol denotes the longitudinal and transverse optical model.The nonresonant Raman spectrum of a βV2O5 powder sample is also computed,providing benchmark theoretical results for the assignment of the experimental spectrum.The computed spectrum agrees with the available experimental data very well.This calculation helps to gain a better understanding of the transition from αto β-V2O5.     

Magnetic and microwave absorbing properties of polyaniline/γ-Fe2O3 nanocomposite

The conducting protonated polyaniline (ES)/γ-Fe₂O₃ nanocomposite with the different γ-Fe₂O₃ content were synthesized by in-situ polymerization. Its morphology, microstructure, DC conductivity and magnetic properties of samples were characterized by transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FTIR), four-wire-technique, and vibrating sample magnetometer (VSM), respectively. The microwave absorbing properties of the nanocomposite powders dispersing in wax coating with the coating thickness of 2 mm were investigated using a vector network analyzers in the frequency range of 7–18 GHz. The pure ES has shown the absorption band with a maximum absorption at approximately 16 GHz and a width (defined as frequency difference between points where the absorption is more than 8 dB) of 3.24 GHz, when 10% γ-Fe₂O₃ by weight is incorporated , the width is broadened to 4.13 GHz and some other absorption bands appear in the range of 7–13 GHz. The parameter dielectric loss tan δ_e (=ε″/ε′) in the 7–18 GHz is found to decrease with increasing γ-Fe₂O₃ contents with 10%, 20%, 30%, respectively, but magnetic loss tan δ_m (=μ″/μ′) increases with increasing γ-Fe₂O₃ contents. The results show that moderate content of γ-Fe₂O₃ nanoparticles embedded in protonated polyaniline matrix may create advanced microwave absorption properties due to simultaneous adjusting of dielectric loss and magnetic loss.