Effect of microstructure of MgO buffer layer on BaTiO3 grown on silicon substrates

MgO ultrathin films were grown on Si(1 0 0) substrates as buffer layers for the growth of ferroelectric BaTiO₃ thin films by laser molecular beam epitaxy (L-MBE). The deposition process of MgO buffer layers grown on silicon was in situ monitored by reflection high-energy electron diffraction (RHEED). The structure of BaTiO₃ films fabricated on MgO buffers was investigated by X-ray diffraction. Biaxially textured MgO was obtained at high laser energy density, but when the laser energy was lowered, MgO buffer was transformed to the form of texture with angular dispersion with the increase of the film thickness. BaTiO₃ films grown on the former buffer were completely (0 0 1) textured, while those on the latter were (0 0 1) preferred orientated. Furthermore, the fabricated MgO buffers and BaTiO₃ films had atomically smooth surface and interface. All these can reveal that the quality of textured MgO buffer is a key factor for the growth of BaTiO₃ films on silicon.     

Surface segregation in Nb-doped BaTiO3 films

We have used in situ photoemission spectroscopy to investigate Niobium doping in polycristalline BaTiO₃. The valence band maximum position progressively shifts from 2.5 eV for undoped to 2.84 eV for Nb-doped films. Ceramics and single crystal have been investigated for comparison with thin films. Nb-doped BaTiO₃ ceramics and Nb-doped SrTiO₃ single crystal show higher Fermi level position indicating that our doped films are less conducting regarding their bulk parents. This was confirmed by impedance spectroscopy under variable temperature. Large amount of niobium is clearly observable at surface but the amount of dopant is drastically reduced below the near-surface region, as evidenced by depth profile. Therefore, we provide evidence of surface segregation which would explain the contrasted resistivity values reported in literature for such donor-doped films.     

Optimization of electromagnetic matching of carbonyl iron/BaTiO3 composites for microwave absorption

Microwave absorbing materials filled with BaTiO₃ and carbonyl iron (CI) particles with various weight fractions (BaTiO₃/CI particles=100/0 to 0/100) are investigated. The dielectric and magnetic properties of the absorbers can be tuned by changing the weight ratio of BaTiO₃/CI particles in the frequency range of 2-18 GHz. Numerical simulations are also performed to design a single-layer and double-layer absorber. The minimum reflection loss of the composite filled with 20 wt% BaTiO₃ and 60 wt% CI particles at 2.0 mm thickness can be reached to −42 dB at 4.1 GHz. With the weight ratio of CI particles in the composite increased, the microwave absorption peak shifted to the lower frequency region. By using a double-layer absorber structure, the microwave absorption performance of the absorber is enhanced. The result shows that the total thickness of the absorber can be reduced below 1.4 mm by using a matching layer filled with 50 wt% BaTiO₃, and an absorption layer filled with 60 wt% BaTiO₃ and 20 wt% CI particles, whereas the reflection loss below −10 dB can be obtained in the frequency range of 10.8-14.8 GHz and the minimum reflection loss of −59 dB can be obtained at 12.5 GHz.     

RHEED observation of BaTiO3 thin films grown by MBE

Ferroelectric BaTiO₃ thin films with a thickness of 10 monolayers (ML) were epitaxially grown on SrTiO₃(0 0 1) substrates by very slow deposition using molecular beam epitaxy (MBE). The investigations were carried out by two growth methods: (i) codeposition and (ii) alternate deposition of the metal elements in an oxygen atmosphere. In situ observation of reflection high-energy electron diffraction confirmed that an epitaxial cube-on-cube structure was prepared. After the deposition, X-ray diffraction measurements were carried out. The 10-ML-thick BaTiO₃ films were highly c-axis oriented single crystals with good film quality.     

Optical characterization and microstructure of BaTiO3 thin films obtained by RF-magnetron sputtering

BaTiO₃ thin films were deposited on Pt/Ti/SiO₂/Si by rf planar-magnetron sputtering. The films thickness increases with the decrease of both deposition pressure and sample-discharge centre distance. The films annealed at 900 °C, for 8 h, present direct band gap energy ranged between 3.57 and 3.59 eV. The dependence of the structure and microstructure (texture, degree of crystallinity), as well as of the optical characteristics on the deposition parameters, was analysed. Using spectroscopic ellipsometry (SE) measurements coupled with the Bruggeman Effective Medium Approximation (B-EMA), the layer structure and the surface roughness, were determined. The root mean square roughness values of the surface layer, estimated by atomic force microscopy (AFM) analyses, are ranged between 10 and 20 nm and were in good agreement with SE data.The obtained films have tetragonal unit cell and show densely packed, non-columnar morphology and hexagon-like crystallite shape.     

Characterization of Y2O3 gate dielectric on n-GaAs substrates

Physical and electrical properties of sputtered deposited Y₂O₃ films on NH₄OH treated n-GaAs substrate are investigated. The as-deposited films and interfacial layer formation have been analyzed by using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). It is found that directly deposited Y₂O₃ on n-GaAs exhibits excellent electrical properties with low frequency dispersion (<5%), hysteresis voltage (0.24 V), and interface trap density (3 × 10¹² eV⁻¹ cm⁻²). The results show that the deposition of Y₂O₃ on n-GaAs can be an effective way to improve the interface quality by the suppression on native oxides formation, especially arsenic oxide which causes Fermi level pinning at high-k/GaAs interface. The Al/Y₂O₃/n-GaAs stack with an equivalent oxide thickness (EOT) of 2.1 nm shows a leakage current density of 3.6 × 10⁻⁶ A cm⁻² at a V_FB of 1 V. While the low-field leakage current conduction mechanism has been found to be dominated by the Schottky emission, Poole-Frenkel emission takes over at high electric fields. The energy band alignment of Y₂O₃ films on n-GaAs substrate is extracted from detailed XPS measurements. The valence and conduction band offsets at Y₂O₃/n-GaAs interfaces are found to be 2.14 and 2.21 eV, respectively.     

Structure-related infrared optical properties of BaTiO3 thin films grown on Pt/Ti/SiO2/Si substrates

BaTiO₃ thin films with different thickness have been grown on Pt/Ti/SiO₂/Si substrates by a modified sol-gel method. X-ray diffraction analyses show that the BaTiO₃ thin films are polycrystalline. The crystalline quality of the films is improved with increasing thickness. The infrared optical properties of the BaTiO₃ thin films have been investigated using an infrared spectroscopic ellipsometry in the wave number range of 800-4000 cm⁻¹ (2.5-12.5 μm). By fitting the measured pseudodielectric functions with a three-phase model (Air/BaTiO₃/Pt), and a derived classical dispersion relation for the thin films, the optical constants and thicknesses of the thin films have been simultaneously obtained. The refractive index of the BaTiO₃ thin films increases and on the other hand, the extinction coefficient does not change with increasing thickness in the entirely measured wave number range. The dependence of the refractive index on the film thickness has been discussed in detail and was mainly due to both the crystalline quality of the films and packing density. Finally, the absorption coefficient was calculated in the infrared region for applications in the pyroelectric IR detectors.     

Synthesis and characterisation of Gd-doped BaTiO3 thin films prepared by laser ablation for optoelectronic applications

The results of gadolinium (Gd)-doped barium titanate (BaTiO₃) thin films prepared by laser ablation on glass and silicon substrates are reported. Rutherford backscattering (RBS) analyses carried out on glass samples indicated the substitution of barium (Ba) by gadolinium (Gd) after annealing, leading to a film with composition Ba_0.76TiGd_0.01O_2.5. There is a reduction in the thickness from 2.21 to 2.02 microns for as-deposited and annealed films. The films on silicon showed a higher degree of crystallinity compared to that of glass substrates due to increased annealing temperature. The average grain size calculated using the X-ray diffraction (XRD) pattern from silicon substrates was 30 nm. The film has a tetragonal structure with a “c/a” ratio of 1.03 signifying that the incorporation of Gd in BaTiO₃ led to the elongation of the c-axis. The percentage transmittance reduced from 80 to 50% due to annealing and this is probably due to structural changes in the film. Swanepoel envelope method employed on the interference fringes of the transmittance pattern led to the determination of the variation of the refractive index with wavelength. Sellmier single oscillator model was applied to determine the optical constants of the films on glass substrates. Bandgap analyses carried out showed the reduction in bandgap with annealing and also the possibility that Gd incorporation has modified the film chemistry leading to the existence of direct (4.35 eV) and indirect (3.88 eV) allowed transitions in the annealed films. Dielectric property measurement carried out under ambient conditions gave a relaxation time τ of 1.6×10⁻⁴ s and conduction by small polaron with the onset of polaron conduction set at about 7 kHz. It is conjectured that these properties, especially the high refractive index and the high bandgaps, can make Gd-doped BaTiO₃ a good candidate for optoelectronic applications.     

Enhanced low-field-magnetoresistance and electro-magnetic behavior of La0.7Sr0.3MnO3/BaTiO3 composites

We report the structural, magentoresistance and electro-magnetic properties of ferromagnet–ferroelectric–type (1−x)La_0.7Sr_0.3MnO₃/xBaTiO₃ (with x=0.0%, 3.0%, 6.0%, 12%, 15.0% and 18.0%, in wt%) composites fabricated through a solid-state reaction method combined with a high energy milling method. The insulator–metal transition temperature shifts to a lower temperature and resistivity increases while the feromagnetic–paramagnetic transition temperature remains almost unchanged with the increase of BaTiO₃ content. Magnetoresistance of the composites at an applied magnetic field H=3 kOe is enhanced in the wide temperature ranges with the introduction of BaTiO₃, which could be explained by the enhanced spin polarized tunneling effect induced by the introduction of BaTiO₃. The low-field magnetoresistance of the composite is analyzed in the light of a phenomenological model based on the spin polarized tunneling at the grain boundaries. Furthermore, the temperature dependence of resistivity for this series has been best-fitted by using the adiabatic small polaron and variable range hopping models. These models may be used to explain effect of BTO on the electronic transport properties on high temperature paramagnetic insulating region.     

Co:BaTiO3/Si(100)纳米复合薄膜制备、微结构及其紫外光电子能谱研究

采用脉冲激光气相沉积(PLD)方法，在Si(100)晶面上制备了Co:BaTiO₃纳米复合薄膜.采用X射线衍射(XRD)结合透射电镜(TEM)方法研究了两种厚度Co:BaTiO₃纳米复合薄膜的晶体结构，当薄膜厚度约为30 nm时，薄膜为单一择优取向；当薄膜厚度约为100nm时，薄膜呈多晶结构.原子力显微镜(AFM)分析表明，当膜厚为30nm时，薄膜呈现明显的方形晶粒.采用紫外光电子能谱(UPS)研究了Co的价态和Co:BaTiO₃纳米复合薄     

Co:BaTiO3/Si(100)纳米复合薄膜制备、微结构及其紫外光电子能谱研究

采用脉冲激光气相沉积(PLD)方法,在Si(100)晶面上制备了Co:BaTiO₃纳米复合薄膜.采用X射线衍射(XRD)结合透射电镜(TEM)方法研究了两种厚度Co:BaTiO₃纳米复合薄膜的晶体结构,当薄膜厚度约为30 nm时,薄膜为单一择优取向;当薄膜厚度约为100nm时,薄膜呈多晶结构.原子力显微镜(AFM)分析表明,当膜厚为30nm时,薄膜呈现明显的方形晶粒.采用紫外光电子能谱(UPS)研究了Co的价态和Co:BaTiO₃纳米复合薄 关键词： 3')" href="#">BaTiO₃ 纳米复合薄膜 紫外光电子能谱     

Direct micropatterning of high dielectric BaTiO3 films by laser-induced pyrolysis with a nano-crystalline seeding technique

A direct patterning method of dielectric BaTiO₃ (BT) films is proposed, which applies laser-induced pyrolysis in combination with nano-crystalline seeding technique. A precursor solution of a BT complex alkoxide containing BT nano-crystalline particles with polyvinylpyrollidone (PVP) as dispersion stabilizer was spin-coated on Pt substrate. An Ar⁺ laser beam was focused and scanned on spin-coated BT films, which induced pyrolysis and crystallization of the films with spatial selectivity. Micropatterns were obtained by striping laser-unirradiated regions on the films with HCl aqueous solution. Raman spectra of the micropattern confirmed that the structures were tetragonal crystalline BT. Clear micropatterns with a line width of ca. 3 μm and an interval of 5 μm were formed at PVP concentrations of 25 and 50 kg/m³. The dielectric constant and dissipation factor of the film fabricated at a laser energy density of 27 MW/cm² and a scanning speed of 25 μm/s attained 76.2 and 0.07, respectively, for a measurement frequency of 100 kHz.     

Electrophoretic deposition of BaTiO3/CoFe2O4 multiferroic composite films

Electrophoretic deposition was utilized for preparation of BaTiO₃/CoFe₂O₄ multiferroic composite thick films on indium-tin oxide substrates. The suspensions for electrophoretic experiments were prepared by dispersing BaTiO₃ and CoFe₂O₄ nanoparticles with different molar ratios into solvents composed of ethanol and acetylacetone. Polyvinyl butyral was added to the suspensions in order to enhance the adhesion and strength of deposit and prevent cracking. The zeta potential values of BaTiO₃/CoFe₂O₄ suspensions were measured to be 26.4-36.9 mV. The experiment results showed that deposited films were obtained only when the applied electric field was larger than a certain critical value. XRD and SEM analysis depicted the presence of constituent phases in composite films. The percolation threshold of composite films was improved through dispersing ferromagnetic phase into ferroelectric phase. Therefore, the ferroelectric properties of composite thick films were maintained when the ferromagnetic properties were enhanced significantly with increasing CFO content.     

X-ray photoelectron spectroscopic investigations on cubic BaTiO3, BaTi0.9Fe0.1O3 and Ba0.9Nd0.1TiO3 systems

X-ray photoelectron spectroscopic (XPS) studies were carried out on wet-chemically synthesized cubic BaTiO₃, Ba_0.9Nd_0.1TiO₃ and BaTi_0.9Fe_0.1O_3−δ powders. The compounds were prepared by hydrothermal and gel to crystallite conversion technique; and phases formed readily at 420 K. The phase purity of the powders was confirmed from X-ray diffractometry. Chemical state and chemical environment of the constituent elements in the compositions were examined by XPS. Ba²⁺ was found to exist in two different chemical environments in these titanates. The Ti 2p_3/2 photoelectron peak in BaTi_0.9Fe_0.1O_3−δ was found to be broadened after Fe³⁺ substitution. Any resolvable broadening was not observed distinctly in the Ti 2p peak for Ba_0.9Nd_0.1TiO₃, unsintered BaTiO₃ and BaTiO₃ annealed in hydrogen (8% H₂ + Ar) at 1000 K. The prevalence of mixed-valent titanium and iron in BaTi_0.9Fe_0.1O_3−δ composition was evident from the XPS results and was further supported by the enhanced electrical conductivity at 298-550 K for BaTi_0.9Fe_0.1O_3−δ in comparison to BaTiO₃ and Ba_0.9Nd_0.1TiO₃. Hydroxyl incorporation was facilitated by substituting Nd³⁺ in Ba-sublattice. The presence of hydroxyls was observed from the broadening of the O 1s peak in XPS studies of the compounds.     

Annealing effects on the structural and electrical transport properties of n-type Bi2Te2.7Se0.3 thin films deposited by flash evaporation

N-type Bi₂Te_2.7Se_0.3 thermoelectric thin films with thickness 800 nm have been deposited on glass substrates by flash evaporation method at 473 K. Annealing effects on the thermoelectric properties of Bi₂Te_2.7Se_0.3 thin films were examined in the temperature range 373-573 K. The structures, morphology and chemical composition of the thin films were characterized by X-ray diffraction, field emission scanning electron microscope and energy dispersive X-ray spectroscopy, respectively. Thermoelectric properties of the thin films have been evaluated by measurements of the electrical resistivity and Seebeck coefficient at 300 K. The Hall coefficients were measured at room temperature by the Van der Pauw method. The carrier concentration and mobility were calculated from the Hall coefficient. The films thickness of the annealed samples was measured by ellipsometer. When annealed at 473 K, the electrical resistivity and Seebeck coefficient are 2.7 mΩ cm and −180 μV/K, respectively. The maximum of thermoelectric power factor is enhanced to 12 μW/cm K².     

Influence of postdeposition annealing on structural properties and electrical characteristics of thin Tm2O3 and Tm2Ti2O7 dielectrics

We describe the structural properties and electrical characteristics of thin thulium oxide (Tm₂O₃) and thulium titanium oxide (Tm₂Ti₂O₇) as gate dielectrics deposited on silicon substrates through reactive sputtering. The structural and morphological features of these films were explored by X-ray diffraction, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, and atomic force microscopy, measurements. It is found that the Tm₂Ti₂O₇ film annealed at 800 °C exhibited a thinner capacitance equivalent thickness of 19.8 Å, a lower interface trap density of 8.37 × 10¹¹ eV⁻¹ cm⁻², and a smaller hysteresis voltage of ∼4 mV than the other conditions. We attribute this behavior to the Ti incorporated into the Tm₂O₃ film improving the interfacial layer and the surface roughness. This film also shows negligible degrees of charge trapping at high electric field stress.     

Lead-free ferroelectric BaTiO3 doped-(Na0.5Bi0.5)TiO3 thin films processed by pulsed laser deposition technique

The difficulties in synthesizing phase pure BaTiO₃ doped-(Na_0.5Bi_0.5)TiO₃ are known. In this work, we reporting the optimized pulsed laser deposition (PLD) conditions for obtaining pure phase 0.92(Na_0.5Bi_0.5)TiO₃-0.08BaTiO₃, (BNT-BT_0.08), thin films. Dielectric, ferroelectric and piezoelectric properties of BNT-BT_0.08, thin films deposited by PLD on Pt/TiO₂/SiO₂/Si substrates are investigated in this paper. Perovskite structure of BNT-BT_0.08 thin films with random orientation of nanocrystallites has been obtained by deposition at 600 °C. The relative dielectric constant and loss tangent at 100 kHz, of BNT-BT_0.08 thin film with 530 nm thickness, were 820 and 0.13, respectively. Ferroelectric hysteresis measurements indicated a remnant polarization value of 22 μC/cm² and a coercive field of 120 kV/cm. The piezoresponse force microscopy (PFM) data showed that most of the grains seem to be constituted of single ferroelectric domain. The as-deposited BNT-BT_0.08 thin film is ferroelectric at the nanoscale level and piezoelectric.     

Switching phenomenon and optical properties of Se85Te10Bi5 films

Se₈₅Te₁₀Bi₅ films of different thicknesses ranging from 126 to 512 nm have been prepared. Energy-dispersive X-ray (EDX) spectroscopy technique showed that films are nearly stoichiometric. X-ray diffraction (XRD) measurements have showed that the Se₈₅Te₁₀Bi₅ films were amorphous. Electrical conduction activation energy (ΔE_σ) for the obtained films is found to be 0.662 eV independent of thickness in the investigated range. Investigation of the current voltage (I-V) characteristics in amorphous Se₈₅Te₁₀Bi₅ films reveals that it is typical for a memory switch. The switching voltage V_th increases with the increase of the thickness and decreases exponentially with temperature in the range from 298 to 383 K. The switching voltage activation energy (ε) calculated from the temperature dependence of V_th is found to be 0.325 eV. The switching phenomenon in amorphous Se₈₅Te₁₀Bi₅ films is explained according to an electrothermal model for the switching process. The optical constants, the refractive index (n) and the absorption index (k) have been determined from transmittance (T) and reflectance (R) of Se₈₅Te₁₀Bi₅ films. Allowed non-direct transitions with an optical energy gap (E_g^opt) of 1.33 eV have been obtained. ΔE_σ is almost half the obtained value of E_g^opt, which suggested band to band conduction as indicated by Davis and Mott.     

Structural characterization of La0.9Ba0.1MnO3/Y-ZrO2 film by X-ray diffraction

Perovskite manganite La_0.9Ba_0.1MnO₃(LBMO) films were deposited on (0 0 1)-oriented single crystal yttria-stabilized zirconia (YSZ) substrate by 90° off-axis radio frequency magnetron sputtering. The film thickness ranged from 10 nm to 100 nm. Grazing incidence X-ray diffraction technique and high resolution X-ray diffraction were applied to characterize the structure of LBMO films. The LBMO film mainly consisted of (0 0 1)-orientated grain as well as weakly textured (1 1 0)-orientated grain. The results indicated that an amorphous layer with thickness of about 4 nm was formed at the LBMO/YSZ interface. The strain in LBMO film was small and averaged to be about -0.14%. The strain in the film was not lattice mismatch-induced strain but residual strain due to the difference in thermal expansion coefficient between film and substrate.     

Structural characterization of thermally evaporated Bi2Te3 thin films

Thermally evaporated Bi₂Te₃ thin films were deposited on glass substrates. X-ray diffraction study confirmed that the growned films are polycrystalline in nature having hexagonal structure. The film exhibits preferential orientation along the [0 1 5] direction for the films of all thickness together with other abundant planes [0 1 1 1] and [1 1 0]. Various structural parameters such as lattice constants, crystallite size, strain, and dislocation density have been calculated and they are found to be thickness dependent. The lattice parameters are found to be a=4.38 Å and c=30.40 Å. The grain size of the films increases with thickness as the dislocation density and the microstrain decreases with thickness. The mean bond energy and the average coordination number of Bi₂Te₃ thin film are found to be 1.72 eV and 2.4, respectively.