Theoretical investigations of cascaded chaotic synchronization and communication based on optoelectronic negative feedback semiconductor lasers

In this paper, a novel chaotic relay system, based on cascaded synchronization in optoelectronic negative feedback chaotic semiconductor lasers, is presented. Synchronization characteristics and the influence of parameter mismatches on synchronization performances are investigated. The results show that the complete synchronization can be achieved under suitable system parameters; internal parameter mismatches of the lasers have influence on synchronization quality, but the system possesses more robustness to parameter mismatches compared with cascaded synchronization based on coherent optical feedback. Moreover, communication related issues are also investigated. Under the additive chaos modulation (ACM) encryption scheme, encoded messages can be successfully extracted at both mediator laser (ML) and receiver laser (RL) parts; parameter mismatches of the lasers will affect messages decoding, but the influence is not strong.     

Photonic microwave generation and transmission using direct modulation of stably injection-locked semiconductor lasers

Direct modulation of a semiconductor laser subject to stable injection locking is capable of generating microwave subcarriers that are broadly frequency-tunable, more than 4 times its free-running relaxation resonance frequency, and are highly sideband-asymmetric, more than 22 dB. The latter characteristic makes the laser system particularly attractive for radio-over-fiber applications. Therefore, such modulation sideband asymmetry, its underlying mechanism, and its effect on chromatic dispersion-induced microwave power variation are extensively studied, in particular, over a broad range of injection conditions. Mappings showing integrated and global understandings of the modulation sideband asymmetry together with the modulation frequency enhancement are obtained accordingly. Interestingly, it is found that the microwave frequency can be tuned over a broad range while keeping a similar level of modulation sideband asymmetry and vice versa, either of which is achieved by simply changing the injection condition. This, therefore, considerably adds the flexibility and re-configurability to the laser system. The cavity resonance shift due to injection locking is responsible for not only the enhanced modulation frequency but also the modulation sideband asymmetry, where a modification in its previous interpretation is obtained for explanation. The modified modulation characteristics are strong functions of the linewidth enhancement factor, making it possible to choose lasers with proper values of the factor for different photonic microwave characteristics.     

Generation and synchronization of feedback-induced chaos in semiconductor ring lasers by injection-locking

A smart scheme for chaotic signal generation in a semiconductor ring laser (SRL) with optical feedback is proposed and investigated numerically. The chaotic oscillation in the SRL can be generated by the partial reflection of the laser output. Time series, attracter and the power spectrum, as well as the Lyapunov exponent spectrum, are calculated and analyzed. We also study the synchronization scheme of feedback-induced chaos in SRLs by optical injection that consists of a drive SRL with optical feedback and a response SRL with optical injection from the drive laser. High-quality synchronization is achieved with suitable injection strength and detuning frequency between the drive and the response SRLs.     

Bidirectional chaos synchronization and communication in semiconductor lasers with optoelectronic feedback

In this paper, a bidirectional chaos communication system based on the optoelectronic feedback semiconductor lasers (SLs) is presented, and the synchronization characteristics and the communication performances of such system are simulated numerically. The results show that the high-quality synchronization with zero lag time and simultaneous bidirectional message transmission can be realized under the suitable system parameters; the internal parameter mismatches of the lasers have influence on the synchronization quality and communication performance, but this system still possesses good robustness to parameter mismatches. Meanwhile, the security can be ensured through a suitable encoding-decoding technique.     

基于互注入半导体激光器的混沌输出产生17.5 Gbit/s随机码

采用两个借助光纤连接的相互注入半导体激光器,实验获取了10 GHz超宽带混沌种子信号.通过8-bit模数转换器将混沌信号转换为二进制数据流,并进行进一步的逻辑异或处理和舍弃最高有效位操作,最终获得了能顺利通过美国国家标准与技术研究院(National Institute of Standard and Technology,简记为NIST)800-22标准测试以及Diehard测试,速率达17.5 Gbit/s的高速随机码. 关键词： 随机码 混沌激光 互注入半导体激光器     

Periodic locking of chaos in semiconductor lasers with optical feedback

We show how a chaotic system can be locked to emit a periodic waveform belonging to its chaotic attractor. We numerically demonstrate our idea in a system composed of a semiconductor laser driven to chaos by optical feedback from an external cavity. The clue is the injection of an appropriate periodic signal that modulates the phase and amplitude of the intra-cavity radiation, a chaotic analogy of conventional mode-locking. The result is a time process that manifests a chaotic signature embedded in a long-scale periodic train.     

Experimental investigations on the external cavity time signature in chaotic output of an incoherent optical feedback external cavity semiconductor laser

Chaotic dynamics of a semiconductor laser subject to incoherent optical feedback (IOF) are experimentally investigated, and the external cavity time are retrieved and measured from intensity time series of the laser output by using self-correlation function and the mutual information. Through moderating feedback strength and injection current of the laser, the external cavity time signature of the laser chaotic output is effectively attenuated, and then the security of such chaos encryption system can be assured to a certain degree.     

激光混沌耦合反馈光电及全光逻辑门研究

理论上利用两个混沌半导体激光器的耦合反馈,构建了两种基本的光电及全光门.基本方法是,让外部光注入到两个激光器中而导致激光混沌,通过两激光器激光的相互耦合及反馈实现同步;在这基础上,一是让两激光器分别在电流调制下,控制混沌同步或者非同步,实现光电逻辑门的功能与计算;二是利用光的外部调制方法让两相互耦合激光分别在相位调制下,控制混沌同步或者非同步,并最终实现全光逻辑门的功能与计算.数值结果证明了两方法的可行性. 关键词： 混沌 逻辑门 激光器 同步     

Frequency stabilization of multiple semiconductor lasers using digital feedback loop

We propose and demonstrate a simple technique to stabilize the frequencies of multiple semiconductor lasers simultaneously using a Fabry-Perot etalon filter and a digital signal processing. Unlike other stabilization techniques, the proposed technique could stabilize DFB lasers using only one digital feedback control loop. The result shows that the proposed technique could maintain the frequency stability of 16 DFB lasers within ±150 MHz.     

Route to broadband optical chaos generation and synchronization using dual-path optically injected semiconductor lasers

The generation and synchronization of broadband optical chaos in dual-path optically injected (DPOI) semiconductor lasers (SLs) are numerically demonstrated. The effective bandwidth enhancement is achieved up to about 35.84 GHz, under appropriate injection strength and frequency detuning. We systematically study and compare the bandwidth enhancement in single-path optically injected SLs (SPOI-SLs) and DPOI-SLs, and find that better performance can be obtained for the latter over a larger parameter span. Furthermore, two schemes for synchronization of bandwidth-enhanced chaos generated in two similar or identical (twin) DPOI-SLs are proposed, where the twins are driven by a common DPOI signal injected from another chaotic SL. High-quality chaos synchronization, an isochronous type, is observed between the twin DPOI-SLs. Also, the effect of parameter mismatch and frequency detuning is numerically examined. The simple technique of bandwidth enhancement using dual-path injection may pave way for various applications such as high-speed random number generators (RNGs) and chaos-based communications.     

Linewidth analysis of 40-GHz passively mode-locked multi-mode semiconductor lasers

An experimental analysis on the quality of 40-GHz radio-frequency signals generated by various passively mode-locked semiconductor lasers is addressed. The analysis is performed considering the frequency linewidth of 40-GHz optically generated signals and the number of longitudinal modes selected by the cavity of each laser under study. Four of these devices are multi-quantum wells InAlGaAs Fabry-Pérot lasers. They have been engineered to exhibit a specific number of longitudinal modes: 4, 5, 10, and 22 modes, respectively. Another device under test is a bulk distributed Bragg reflector laser exhibiting 3 lasing modes. The last device under study is a quantum-dash Fabry-Pérot laser characterized by 40 lasing modes. From our experimental results it appears that, regardless the nature of the device cavity and active media, the strength of the passively mode-locked mechanism might be enhanced with the number of longitudinal modes oscillating into the laser cavity, allowing a reduction in the frequency linewidth.     

Chaos generation in a semiconductor ring laser with an optical injection

Two chaos generation schemes are demonstrated numerically based on a semiconductor ring laser (SRL) with either a constant or a chaotic optical injection from an external distributed feedback (DFB) laser. Under a certain bias current, the chaotic output can be generated by the SRL with appropriate injection parameters. Parameter map is achieved numerically to show types of oscillation in the SRL. Bifurcation diagrams and Lyapunov exponent spectra roughly describe the routes to chaos for the SRL with disturbance. A bandwidth-enhanced chaos generation can be describes based on the chaotic optical injection scheme. The bandwidth of the bandwidth-enhanced chaos generated is about 12 GHz, which achieves approximately a two-fold increase compared with the constant injection scheme.     

Large-signal analysis of analog intensity modulation of semiconductor lasers

Large-signal analog intensity modulation of semiconductor lasers (SLs) is characterized based on numerical integration of the rate equations. The modulation dynamics are classified into seven types with regular and irregular signals. The classification is made in terms of the time trajectory of the laser intensity, phase portrait, and fast Fourier transform (FFT) spectrum. The operating region of each type is defined in a diagram of the modulation index versus modulation frequency. The accuracy of applying the approximate small-signal analysis to study analog modulation is assessed. The validity of identifying the dynamic types by the large-signal modulation response is examined. The laser emits continuous and regular signals under weak modulation. When the modulation index exceeds one half, the laser emits picosecond-pulses. Under strong modulation with frequencies around the relaxation frequency, both continuous and pulsed signals exhibit period-doubling.     

Oscillation wavelength of fiber Bragg grating semiconductor lasers

Based on the physical fact that a laser containing a gain medium with homogenous line broadening oscillates at the wavelength which requires the smallest threshold gain due to the mode competition effect, after taking into account the wavelength-depended reflectivity distribution profile of a fiber Bragg grating, the oscillation wavelength λ_l of fiber Bragg grating semiconductor lasers has been investigated theoretically. The results show that the laser oscillation wavelength λ_B is not fixed at the Bragg reflection wavelength λ_l of fiber Bragg grating, and the offset between λ_B and λ_l depends on the reflectivity distribution profile of fiber Bragg grating and the gain profile of semiconductor gain medium.     

Signal synchronous transmission of current-modulated semiconductor laser under bounded noise

The synchronous transmission problem of chaotic signal between current-modulated semiconductor lasers is investigated using variable coupling method. The theoretical analysis about characteristics of current-modulated semiconductor lasers is derived. According to Lyapunov theory, the condition which can realize synchronous transmission between semiconductor lasers is derived through determining maximum Lyapunov exponent of the coupling system. Further study the synchronization performance between semiconductor lasers under the influence of bounded noise, the results show that it has a strong anti-interference ability.     

Open loop synchronization of semiconductor lasers with periodical injection

In this paper, the influence of fluctuation amplitude and frequency of the injection field on the dynamics and synchronization of semiconductor lasers are studied numerically. The fluctuation amplitude and frequency of the injection field are controlled by external modulation of the master laser. In the simulation, we use a modified correlation coefficient named similarity index to evaluate the synchronization performance. The results show that frequency and fluctuation amplitude of the injection field play important roles on the dynamics and synchronization quality of the system. Large fluctuation amplitude and moderate fluctuation frequency of the injection field will contribute to the synchronization of the two lasers. The results can also be extended to the analysis of chaotic signals.     

All-optical set-reset flip-flop based on frequency bistability in semiconductor microring lasers

The electric field of the modes of semiconductor microring lasers (SMRLs) in the presence of bus waveguide reflections are linear combinations of the clock wise (CW) and the counter clock wise (CCW) electric fields. The mode structures can be controlled by the waveguide reflection coefficients. The power ratio and phase difference of the CW and CCW fields of one mode is proportional to the ratio of the reflection coefficients of the left and right waveguides. It is shown that the degenerate CW and CCW modes in the presence of bus waveguide reflections are split into two modes with different frequencies. Employing these new modes, SMRL can be used as an element to design flip-flops used in photonic integrated circuits. For a symmetric structure, the inter-frequencies of CW and CCW waves relating to each mode can be considered as the output of the optical flip-flop. Output of asymmetric mode is zero while the symmetric mode has a nonzero output.     

Realization of temperature in semiconductor using optical principle

Owing to temperature is important for both elemental and compound semiconductor to study various properties, this paper presents a novel technique to measure the temperature in semiconductor at wavelength, 10.59 μm using optical principle. Here both reflection and absorption losses are considered to find out temperature in semiconductor. Reflectance is found using plane wave expansion method, where absorption factor is determined using Maxwell's curl equations. Simulation result reveals that reflectance and transmitted intensity vary linearly with respect to different temperatures. Apart from this, it is also seen that absorbance is zero for all semiconductor at wavelength 10.59 μm. The excellent linear variation of transmitted intensity gives an accurate measurement of temperature in semiconductors at aforementioned wavelength.     

A comparison of algainas and InGaAsP-based 1.3 μm semiconductor lasers using high pressure

Abstract

We have compared the effect of hydrostatic pressure on the threshold current, I_th, and lasing energy, E_lase, of 1.3 pm quantum-well devices based upon AlGaInAs and InGaAsP. Whilst we observe a very similar dependence of E_lase on pressure for the two materials, we measure strikingly different variations of I_th. By applying pressure to 1.3 μm InGaAsP lasers, I_th typically decreases by ～ 10% over 1 GPa consistent with the reduction of Auger recombination, which forms ～ 50% of I_th at room temperature. However, for the 1.3 μm AlGaInAs-based lasers, we observe an increase in I_th by ～ 8% over the same pressure range. From these results we conclude that non-radiative recombination accounts for only ～ 20% of I_th in AlGaInAs-based devices. This is in good agreement with previous temperature dependence measurements and shows why AlGaInAs-based devices exhibit a reduced temperature sensitivity of I_th which is very important for telecommunications applications.     

Optical-feedback induced chaos and its control in semiconductor lasers based on sliding tunable dual-wedges

We present a method of chaos and its control in semiconductor laser based on sliding tunable dual-wedges. We numerically reveal the dynamics of chaos and its control in semiconductor lasers by changing the length of sliding tuneable dual-wedges. The results indicated that, with the appropriate changes of the length of sliding tuneable dual-wedge, the laser can be controlled into steady state, single-periodic, multi-periodic and even chaos respectively. The results also provide a new method to generate various period states in the chaos system.