Transformation of a Si(111) stepped surface during the formation of a Si(3 × 1)Ca superstructure

The morphological changes of a Si(111) stepped surface during the formation of a Si(3 × 1)Ca surface structure have been studied using ultra high vacuum reflection electron microscopy (UHV REM). Monoatomic step clustering during surface reconstruction and an influence of adatom electromigration on step clustering have been found. The mechanism and conditions of step cluster formation during superstructural transitions are discussed.     

Surface reconstructions of the Si(100)–Ge system

The surface reconstruction of epitaxial Ge layer on Si(100) was studied with ultrahigh vacuum scanning tunneling microscopy. The surface with 0.8 ML Ge grown in the presence of a hydrogen surfactant reveals the same structures as found in chemical-vapor-deposited Ge on Si(100): (i) defective (2×1) structure at 290°C, (ii) irregular (2×N) in Ge layer and defective (2×1) in bare Si regions at 420°C, and (iii) (2×N) in Ge-covered regions and c(4×4) in bare Si regions at 570°C. The morphology of step edges does not change with temperature, implying that the c(4×4) reconstruction is anisotropic in nature.     

Oxygen induced reconstruction of (h11) and (100) faces of copper

A LEED and AES study on oxygen adsorption on Cu(100) and (h11) faces with 5 h 15 has been performed under various adsorption conditions (220 K T 670 K and 1 × 10⁻⁸ P 6 × 10⁻⁵ Torr of oxygen). The dependence of adsorption temp on the oxygen surface superstructures is pointed out. At least, three oxygen surface states exist on a Cu(100) face. For low temperature exposures to oxygen, under conditions of slow surface diffusion, on the (100) face, two oxygen surface phases exist: a “four spots” and a c(2 × 2) superstructure, both observed even at saturation coverage; on all the stepped faces, a c(2 × 2) appears and no faceting is observed. For high temperature exposures, on the (100) face, two oxygen superstructures are observed, a “four spots” followed by a (2√2 × √2)R45° at higher coverages; on all the stepped faces, surface diffusion is activated and oxygen induced faceting occurs. The appearance of faceting is associated with the onset of the formation of the (2√2 × √2)R45° structure on the (100) face. The oxygen induced faceting and the oxygen surface meshes are reversible with coverages. At saturation coverage, a non-reversible surface transition between the c(2 × 2) and (2√2 × √2)R45° superstructures is observed at 420 ± 20 K. The importance of impurity traces on the surface meshes is emphasized. Oxygen coverage at saturation is independent of the studied faces and adsorption temperature. Faceting occurs at a critical coverage value, whatever the stepped faces and adsorption temperature are. Models of the oxygen structure on the (h10) stepped faces are discussed.     

Determination of the distribution of steps on a surface from LEED spot profiles

Within the kinematic approximation, the LEED profile from a one-dimensional stepped surface can be approximately expressed as a sum of Lorentzians and δ-functions for an arbitrary step distribution. Especially for the geometric and Γ-distributions, this expression is exact. The peak positions and widths of the Lorentzians are directly related to the step distribution. For this reason, a direct estimate of the step distribution by fitting a measured LEED profile becomes possible.     

Hydrogen induced structure changes of GaAs(1 0 0) surfaces

The interaction of hydrogen with GaAs(1 0 0) surfaces has been studied at room temperature by means of high-resolution electron energy-loss spectroscopy (HREELS), low-energy electron-diffraction (LEED), and Auger electron spectroscopy (AES). Sample cleaning by Ne⁺ ion bombardment (500 eV) and annealing resulted (with increasing temperatures) in “1 × 1”, 1 × 6, 4 × 1, 4 × 6 and c(8 × 2) LEED structures. As a function of hydrogen exposure, the intensity ratio of the stretching vibrations (As-H/Ga-H) is shown to be characteristic for the specific reconstructed surface. In particular the arsenic hydride concentration gradually decreased in all cases. In addition, an initial weakening of the fractional order LEED spots occurred with increasing hydrogen exposures. Finally, a strong 1 × 2 structure was observed independent of the reconstruction we started with. Simultaneously, a shift of the energetic position of the Ga-H stretching vibration occurred.     

The adsorbate-induced removal of the Pt{100} surface reconstruction Part I: NO

The molecular adsorption of NO on both the reconstructed (hex) and unreconstructed (1 × 1) surfaces of Pt{100} has been studied using a combination of infrared reflection-absorption spectroscopy (IRAS) and low energy electron diffraction (LEED) at temperatures between 90 and 300 K. On the (1 × 1) surface at 300 K adsorbed NO gives rise to an N-O stretching band at initially 1596 cm⁻¹ shifting to 1641 cm⁻¹ at a coverage of θ = 0.5. The LEED pattern at this coverage is interpreted in terms of a c(4 × 2) structure in which all the molecules occupy a single type of adsorption site between the on-top and bridge positions. At temperatures below 300 K, a higher coverage disordered phase is observed, giving rise to an N-O stretching band at 1680 cm⁻¹ associated with an on-top NO species. On the (hex) phase surface above 210 K, NO adsorption gives rise to bands characteristic of adsorption on the (1 × 1) phase indicating that the reconstruction is immediately lifted. Below 200 K initial adsorption actually occurs directly on the (hex) phase, resulting in a band at 1680 cm⁻¹, which is assigned to on-top NO. This band increases in intensity until, at a critical coverage dependent on temperature, the (hex) → (1 × 1) surface phase transition is induced. This is indicated by the disappearance of the band at 1680 cm⁻¹ and its replacement by bands characteristic of adsorption on islands of the (1 × 1) structure.     

A statistical model for the scattering of atoms from randomly stepped surfaces

The scattering of an atomic beam from a randomly stepped surface has been calculated using the hard corrugated wall model. Under the basic assumption that scattering from the step edges may be neglected the scattering equation can be solved without any further approximation. The solution displays the usual diffraction peaks each of them is broaden by a term characterizing the step configuration. If the step distribution is ergodic and stationnary in space this term is the characteristic function of the difference of level between two point of the surface considered as a random variable. Statistical models for the step repartition at the surface are proposed and the scattering intensity is derived in a closed form. The main result is that the broadening of the peaks varies from no broadening to a maximum according as the interferences from waves reemitted by the various terraces are constructive or destructive. A comparison is made with previous experimental data from which an estimation of the average step separation can be drawn. The sensitivity of the atomic beam scattering to steps is found to be more than one step every one hundred crystal atoms.     

Spatially resolved dynamics of the TiO2(1 1 0) surface reconstruction

We use low-energy electron microscopy to image the reversible transformation of the TiO₂(1 1 0) surface between a high-temperature 1 × 1 structure and a low-temperature 1 × 2 structure. The reconstruction dynamics are novel: 1 × 2 bands nucleated during cooling at the steps of the starting 1 × 1 surface and then grew laterally from the steps. The transformation kinetics are dominated by mass flow from the surface to the bulk, a process that facilitates converting the high-density 1 × 1 phase to the lower-density 1 × 2 phase. We have also imaged how the 1 × 1 surface reconstructs to 1 × 2 phase after sufficient oxygen is removed from the crystal’s bulk during vacuum annealing. 1 × 2 bands also nucleated and grew laterally from the initial 1 × 1-surface’s steps. However, because this isothermal 1 × 1-to-1 × 2 transition occurs largely by mass redistribution on the surface, the steps of the initial 1 × 1 surface and final 1 × 2 surface are offset. We propose models of mass redistribution during the 1 × 1/1 × 2 phase transition to explain this effect. We conclude that the phase transition is first-order because it always occurred by the nucleation and growth of discrete phases. Finally, we show that quenching can roughen TiO₂’s surface by forming pits and that changing temperature causes step motion on 1 × 2 surfaces.     

In situ monitoring of the c( 4 × 4) to the 2 × 4 surface phase transformation on GaAs(001) by grazing incidence X-ray diffraction

The transition between the arsenic saturated c(4 × 4) and the As stabilised 2 × 4 reconstructed GaAs(001) surfaces has been followed in situ on a UHV grazing incidence X-ray diffractometer stage. X-ray diffraction lines specific of either structure have been recorded as a function of temperature. The intensity and lineshape evolution has enabled to propose a model for the transformation involving a homogeneous disordering of the c(4 × 4) surface through random As desorption followed by nucleation and growth of 2 × 4 domains. Under UHV conditions, the irreversible transition is observed over a temperature interval ranging from 330°C to 380°C.     

A novel (8 × 4) superstructure as precursor to the c(4 × 4) phase during Sb/Si(0 0 1) desorption

The role of kinetics in the superstructure formation of the Sb/Si(0 0 1) system is studied using in situ surface sensitive techniques such as low energy electron diffraction, Auger electron spectroscopy and electron energy loss spectroscopy. Sb adsorbs epitaxially at room-temperature on a double-domain (DD) 2 × 1 reconstructed Si(0 0 1) surface at a flux rate of 0.06 ML/min. During desorption, multilayer Sb agglomerates on a stable Sb monolayer (ML) in a DD (2 × 1) phase before desorbing. The stable monolayer desorbs in the 600–850 °C temperature range, yielding DD (2 × 1), (8 × 4), c(4 × 4), DD (2 × 1) phases before retrieving the clean Si(0 0 1)-DD (2 × 1) surface. The stable 0.6-ML (8 × 4) phase here is a precursor phase to the recently reported 0.25-ML c(4 × 4) surface phase, and is reported for the first time.     

Two-dimensional unoccupied electronic band structure of clean Cu(110) and (1 × 2) Na/Cu(110)

Using the technique of angle-resolved inverse photoemission, we have measured the dispersion of an unoccupied Cu(110) surface state for the clean Cu(110) surface and for the (1 × 2) reconstructed Na/Cu(110) surface along the symmetry lines. The dispersion of the crystal-induced surface state of clean Cu(110) at 2.05 eV above the Fermi energy at the point of the SBZ is free-electron-like with an effective mass of (1.0 ± 0.2)m_e at the point, which is in good agreement with other experimental results as well as a theoretical calculation. This surface state shifts to 2.5 eV above the Fermi energy for the (1 × 2) phase of Na/Cu(110) with a coverage of 0.25 ML, and the dispersion along the direction is considerably reduced compared to the clean surface. On the other hand, the dispersion of this state for (1 × 2) Na/Cu(110) (0.25 ML) along the direction is close to that of clean Cu(110). We account for these results within a missing-row picture of the Na-induced reconstruction.     

Rotational epitaxy of a hexagonal layered material on a square substrate: PbI2 on InSb(001)

PbI₂ has been adsorbed on the clean InSb(001)-(4 × 1) reconstructed surface and on the InSb(001)-(1 × 3)-Pb lead covered reconstructed surface. On the clean surface epitaxial growth occurred with the unit mesh of the layered PbI₂ aligning exactly with both the substrate [110] and [1 0] directions. On desorption a reaction occurred between the last layer of PbI₂, and the substrate, forming a series of structures which finished with a well-formed (1 × 3)-Pb structure in which the surface is depleted/enriched in In/Sb compared to the clean (4 × 1). The Pb in this structure is thought to partially replace surface In. Epitaxial adsorption also occurred on the (1 × 3)-Pb surface generating a single, well-formed structure with the hexagonal net of the PbI₂ aligned with just the [1 0] substrate direction. The structures and reactions are discussed and a row matching model is proposed to explain the single epitaxial orientation of PbI₂ on the (1 × 3)-Pb surface.     

STM/nc-AFM investigation of (n×6) reconstructed GaAs(0 0 1) surface

We have investigated the n×6 reconstructed GaAs(0 0 1) surface with scanning tunneling and non-contact atomic force microscopy techniques (STM/nc-AFM). For the first time atomically resolved nc-AFM images of that surface are shown. The images confirm the presence of rows of arsenic dimers in the topmost layer as predicted by the current model of n×6 reconstructed surface. However, in contrast to previous reports we found that postulated As dimer sites are not fully occupied. Moreover, the images suggest that ×6 symmetry is present on the surface even in absence of the dimers. We show that due to probing of different surface properties nc-AFM and STM are complementary tools for complex surfaces investigation.     

Adsorption of oxygen and carbon dioxide on cesium-reconstructed Ag(1 1 0) surface

The adsorption of oxygen and carbon dioxide on cesium-reconstructed Ag(1 1 0) surface has been studied with scanning tunneling microscopy (STM) and temperature programmed desorption (TPD). At 0.1 ML Cs coverage the whole surface exhibits a mixture of (1 × 2) and (1 × 3) reconstructed structures, indicating that Cs atoms exert a cooperative effect on the surface structures. Real-time STM observation shows that silver atoms on the Cs-covered surface are highly mobile on the nanometer scale at 300 K. The Cs-reconstructed Ag(1 1 0) surface alters the structure formed by dissociative adsorption of oxygen from p(2 × 1) or c(6 × 2) to a p(3 × 5) structure which incorporates 1/3 ML Ag atoms, resulting in the formation of nanometer-sized (10–20 nm) islands. The Cs-induced reconstruction facilitates the adsorption of CO₂, which does not adsorb on unreconstructed, clean Ag(1 1 0). CO₂ adsorption leads to the formation of locally ordered (2 × 1) structures and linear (2 × 2) structures distributed inhomogeneously on the surface. Adsorbed CO₂ desorbs from the Cs-covered surface without accompanied O₂ desorption, ruling out carbonate as an intermediate. As a possible alternative, an oxalate-type surface complex [OOC–COO] is suggested, supported by the occurrence of extensive isotope exchange between oxygen atoms among CO₂(a). Direct interaction between CO₂ and Cs may become significant at higher Cs coverage (>0.3 ML).     

A mimic model of Pt---Rh catalyst prepared by electrochemical deposition of Rh on the Pt(100) surface

Electrochemical deposition of Rh ions on a (5 × 20) Pt(100) surface gave a (1 × 1) LEED pattern with high background intensity. By exposing the (1 × 1) Rh/Pt(100) surface to O₂ or NO, a characteristic p(3 × 1) Rh---O overlayer is built up at about 400 K, which is the same structure observed on the Pt_0.25Rh_0.75(100) surface exposed to NO or O₂. Once the p(3 × 1) Rh---O overlayer is formed, a reversible structural change, ,p(3 × 1) (1 × 1), can be caused at room temperature by adding H₂ and O₂. The p(3 × 1) Rh---O overlayer on the Pt(100) surface may represent a highly efficient catalyst for NO_x reduction.     

Correlations between the scanning tunneling microscopy imaged configurations and the electronic structure on stepped Si(111)-( 7x7) surfaces

We have observed the dependence of the scanning tunneling microscopy (STM) imaged atom intensity within the (7x7) unit cell on stepped Si(111) as a function of the tunneling voltage. Pronounced differences from the corresponding atom intensity on the flat surface are observed for the contrast of atoms on the low versus the high side of the step and for the contrast between the faulted versus unfaulted subcells of the (7x7) structure. These differences can be accounted for by changes in the electronic structure within the (7x7) subcells adjacent to the step. Calculations of the local density of states and the STM images using a tight-binding method are in excellent agreement with the experimental results.     

Metastable (1 × 2) and (1 × 3) reconstructions of Pd(110)

By adsorption and subsequent reduction of oxygen on Pd(110), metastable (1 × 2) and (1 × 3) reconstructed surfaces have been produced. Oxygen was not present after the reduction but a small amount of residual hydrogen (< 0.15 monolayers) remained. However this is not the origin of the reconstruction as adsorption of this amount of hydrogen on the clean surface did not cause reconstruction. The structures were stable up to ˜ 370 K, and at higher temperatures they reverted to (1 × 1). These results are compared with Rh(110) where similar reconstructions have been found.     

Diffraction from a surface with incommensurate domain walls

The distribution of domain walls in a reconstructed surface with an arbitrary amount of incommensurability is described by Markovian disorder. The angular distribution of the diffraction intensity is obtained exactly in closed-form in the kinematic approximation. The Bragg peak position and the half width exhibit an unusual characteristic of oscillating and twisting about the reciprocal “rods” in reciprocal space. As a special case of small momentum transfer perpendicular to the surface, this theory successfully describes the recent glancing-incidence X-ray diffraction experiment from a reconstructed Au(110) surface by I.K. Robinson     

Time evolution of interface roughness during thermal oxidation on Si(0 0 1)

The surface morphological change at an initial stage of thermal oxidation on Si(0 0 1) surface with O₂ was investigated as a function of oxide coverage by a real-time monitoring method of Auger electron spectroscopy (AES) combined with reflection high energy electron diffraction (RHEED). At 653 °C where oxide islands grow laterally, protrusions were observed to develop under the oxide islands as a consequence of concurrent etching of the surface. The rate of etching was measured from a periodic oscillation of RHEED half-order spot intensity I_(1/2,0) and I_(0,1/2). At 549 °C where Langmuir-type adsorption proceeds, it was observed that both I_(1/2,0) and I_(0,1/2) decrease more rapidly in comparison with an increase of oxide coverage and the intensity ratio between them decreases gradually with O₂ exposure time. These suggest that Langmuir-type adsorption occurs at sites where O₂ adsorbs randomly, leading to subdivision of the 2×1 and 1×2 domains by oxidized regions, and that Si atoms are ejected due to volume expansion in oxidation to change the ratio between 2×1 and 1×2 domains.