负离子对等离子体鞘层特性影响的数值研究

构造强电负性等离子体中平板电极处鞘层形成的模型,使用流体动力学方程组研究等离子体鞘层.得到空间电势、空间静电荷分布和鞘层宽度作为距离函数的数值结果.结果表明,强电负性鞘层中,在等离子体区和鞘层区之间几乎没有过渡的预鞘区,在靠近极板附近鞘层里的电子、负离子和正离子的分布形成一个纯正离子鞘区.在靠近鞘边附近,空间静电荷密度分布有一个很尖的峰.发现同电正性情形相比,强电负性鞘层的宽度要窄很多,空间电势下降得快得多.     

Effect of Cathode and Anode Voltage on an Ion Sheath Thickness in a Magnetically Confined Diffusion Plasma

This article reports about the ion sheath thickness variation occurring in front of a negatively biased plate immersed in the target plasma region of a double plasma device. The target plasma is produced due to the local ionization of neutral gas by the high energetic electrons coming from the source region (main discharge region). It is observed that for an increase in cathode voltage (filament bias voltage) in the source region, the ion flux into the plate increases. As a result, the sheath at the plate contracts. Again, for an increase in source anode voltage (magnetic cage bias), the ion flux to the plate decreases. As a result, the sheath expands at the plate. The ion sheath formed at the separation grid of the device is found to expand for an increase in cathode voltage and it contracts for an increase in the anode voltage of the main discharge region. One important observation is that the applied anode bias can control the Bohm speed of the ions towards the separation grid. Furthermore, it is observed that the ion current collected by the separation grid is independent of changes in plasma density in the diffusion region but is highly dependent on the source plasma parameters. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Sheath in Front of a Negatively Biased Collector that Emits Electrons and is Immersed in a Two Electron Temperature Plasma

An extension of a recently published [Gyergyek T., ?er?ek M. Contrib. Plasma Phys., 45 , (2005), 89] one dimensional fluid model of the sheath formation in front of a floating electrode (collector) that emits secondary electrons and is immersed in a two‐electron temperature nonmagnetized, collisionless plasma is presented. The electron velocity distribution function is assumed to be a two‐temperature maxwellian, while the singly charged positive ions and the emitted electrons are assumed to be monoenergetic. It is assumed that the electrons in the pre‐sheath potential drop obey the Boltzmann relation, so that a larger fraction of the hot than of the cool electrons can penetrate to the sheath edge. Our model predicts that the collector can in some cases have 3 and in some cases, when the emission of electrons from the collector is critical, even 5 different floating potentials at the same hot to cool electron temperature and density ratios very far away from the collector. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Comments on the Bohm Criterion and on the Determination of the Ion Velocity at the Sheath Edge in Non‐Maxwellian Plasma

This work is devoted to the study of the Bohm criterion in the general case of the electron energy distribution function (EEDF). Investigations are performed by means of a Monte Carlo integration method. We resolve the cold fluid equation system describing the ion motion within the sheath, assuming collisionless conditions, singly charged and mono kinetic incoming ions (BOHM model). Results confirm that the limit ion velocity at the sheath edge to assure a monotone electric field with a positive charge over the entire sheath is v_i ≥ (kT_e/M_i) or ε_i ≥ 1/3 <ε_e> in the case of Maxwellian electrons. We show that in the case of a Druyvesteyn electron energy distribution, this limit is larger, it is ε_i ≥ 0.6 <ε_e>. The study is also extended to other distributions functions. Because of the large controversy in recent publications, concerning the boundary conditions at the sheath entrance, we discuss the collisionless conditions at the sheath edge according to the plasma parameters. It is shown that in a collisionless sheath, the condition n_i(χ) ≥ n_e(χ) can be used to determine the limit ion velocity at the sheath edge of the negatively biased collector (Langmuir probe for instance) (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Fluid Model of a Sheath Formed in Front of an Electron Emitting Electrode Immersed in a Plasma with Two Electron Temperatures

The formation of a sheath in front of a negatively biased electrode (collector) that emits electrons is studied by a one‐dimensional fluid model. Electron and ion emission coefficients are introduced in the model. It is assumed that the electrode is immersed in a plasma that contains energetic electrons. The electron velocity distribution function is assumed to be a sum of two Maxwellian distributions with two different temperatures, while the ions and the emitted electrons are assumed to be monoenergetic. The condition for zero electric field at the collector is derived. Using this equation the dependence of electron and ion critical emission coefficients on various parameters ‐ like the ratio between the hot and cool electron density, the ratio between hot and cool electron temperature and the initial velocity of secondary electrons ‐ is calculated for a floating collector. A modification of the Bohm criterion due to the presence of hot and emitted electrons is also given. The transition between space charge limited and temperature limited electron emission for a current‐carrying collector is also analyzed. The critical potential, where this transition occurs, is calculated as a function of several parameters like the Richardson emission current, the ratio between the hot and cool electron density, the ratio between hot and cool electron temperature and the initial velocity of secondary electrons. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of Discharge Plasma Potential on Diffusion Plasma Parameters Controlled by a Mesh Grid in a Double Plasma Device

The plasma region under investigation is separated from the discharge region by a mesh grid. Plasma potential and electron number densities and electron temperatures under bi‐Maxwellian approximation for electron distribution function of the multi‐dipole argon plasma are measured. The cold electrons in the diffusion region are produced by local ionization. The hot electrons are the ionizing electrons behaving as Maxwellian. The electron trapping process in the discharge region is produced by potential well due to positive plasma potential with respect to the anode and by a repulsive grid. The dependence of ratios of the density of the hot to the cold electrons N_E (=N_eh/N_ec) and hot to cold electron temperature T(=T_eh/T_ec) in the diffusion region on the depth of the potential well has been investigated. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

碰撞对两种正离子的电负性磁鞘影响的数值研究

建立包括两种正离子的电负性磁鞘的流体模型,利用四阶龙格库塔法数值求解描述一维稳态等离子体鞘层的方程组,考察离子与中性粒子碰撞对一维稳态等离子体鞘层的影响.结果表明:鞘边Ar⁺与He⁺的含量比值与碰撞参数对离子马赫数的取值范围都有影响.鞘边负离子含量越少,碰撞对鞘层中带电粒子密度的影响越明显.并且随碰撞参数的加大,鞘层中电子、负离子的密度下降越快,两种正离子的密度则呈现不同的波动变化.鞘边负离子含量越多,碰撞对鞘层中两种正离子的速度影响就越明显.此外,碰撞参数越大对鞘边δ越大的鞘层中的带电粒子密度影响越大.     

Particle-in-Cell Simulation of the Focusing Properties of High Energy Electron Beam in Plasma Ion Channel

The focusing properties of high energy electron beam in ion channel is investigated in the paper. The collisions of electrons with the neutral gas and the ionization resulted are considered to study the formation of ion channels with PIC method. The effects of various parameters on the beam focusing are analyzed.     

壁面催化对再入飞行器等离子体鞘套及电磁参数的影响

针对超高声速流动中的高温真实气体效应,采用数值模拟求解考虑化学非平衡的三维Navier-Stokes(N-S)方程,研究了壁面催化对典型再入飞行器等离子体鞘套及电磁参数的影响规律.研究发现:(1)完全催化壁条件下等离子体密度计算结果与飞行试验符合较好;(2)完全催化壁条件下,离解原子在壁面的复合导致波后气体可压缩性增强...     

Diagnose Parameters of Plasma Induced by Femtosecond Laser Pulse in Quartz and Glasses

Electron plasma induced by a focused femtosecond pulse (130 fs, 800 nm) in quartz, fused silica, K9 glass, and Soda Lime glass was investigated by pump-probe technology. Pump and probe shadow imaging and interferometric fringe imaging have been used to determine plasma density, relaxation time, and electron collision time in the conduction band. In these materials, the electron collision time is about several femtoseconds when the electron density is in the 10¹⁹cm⁻³ range. The electron relaxation processes are different: lifetime is about 170 fs in pure quartz and fused silica, and about 100 ps in K9 and Soda Lime glass. The modified electron band by doped ions is regarded to be responsible for the difference of decay time in these materials.     

Modulational Instability of Dust Ion Acoustic Waves in a Collisional Dusty Plasma

The modulational instability of dust ion acoustic waves in a dust plasma with ion-dust collision effects is studied. Using the perturbation method, a modified nonlinear Schrodinger equation contains a damping term that comes from the effect of the ion-dust collision is derived. It is found that the inclusion of the ion-dust collision would modify the modulational instability of the wave packet and could not admit any stationary envelope solitary waves.     

Sheath structure in plasma with two species of positive ions and secondary electrons

The properties of a collisionless plasma sheath are investigated by using a fluid model in which two species of positive ions and secondary electrons are taken into account. It is shown that the positive ion speeds at the sheath edge increase with secondary electron emission(SEE) coefficient, and the sheath structure is affected by the interplay between the two species of positive ions and secondary electrons. The critical SEE coefficients and the sheath widths depend strongly on the positive ion charge number, mass and concentration in the cases with and without SEE. In addition, ion kinetic energy flux to the wall and the impact of positive ion species on secondary electron density at the sheath edge are also discussed.     

Modulational Instability of Dust Ion Acoustic Waves in a Collisional Dusty Plasma

The modulational instability of dust ion accoustic waves in a dust plasma with ion-dust collision effects is studied.Using the perturbation method,a modified nonlinear Schroedinger equation contains a damping term that comes from the effect of the ion-dust collision is derived.It is found that the inclusion of the ion-dust collision would modify the modulational instability of the wave packet and could not admit any stationary envelope solitary waves.     

ICP等离子体鞘层附近区域发光光谱特性分析

为了独立控制鞘层附近区域离子密度和离子能最分布,采用光发射谱(OES)测量技术,对不同射频功率、放电气压和基底偏压下感应耦合等离子体鞘层附近区域辉光特性进行了研究.原子谱线和离子谱线特性分析表明,在鞘层附近区域感应耦合等离子体具有较高的离子密度和较低的电子温度.改变放电气压和射频功率,对得到的光谱特性分析表明,鞘层附近区域离子密度随射频功率的增大而线性增大,在低压下随气压的升高而增大.低激发电位原子谱线强度增加迅速,高激发电位原子谱线强度增加缓慢,而离子谱线强度增加很不明显.改变基底直流偏压,对得到的发射光谱强度变化分析表明,谱线强度随基底正偏压的增加而增大.随着基底负偏压的加入,谱线强度先减小而后增大;直流偏压为-30 V时,光谱强度最弱.快速离子和电子是引起Ar激发和电离过程的主要能量来源.     

Ion Heating in Dusty Plasma of Noble Gas Mixtures

Ion heating in dusty plasma of noble gas mixtures is studied by the observation of dust particles in stratified glow discharge. The particles and their formations can be used as a “contact‐free” probe of the ion flows. It is shown that under condition of experiments transition of dust particles into crystalline state in pure gases occur at much lower pressures in comparison to the case of gas mixtures. This observation is also supported by the evaluation of “effective” kinetic temperature of dust particles as defined from the velocity distribution function at the same set of discharge parameters. Absolute value of temperature of dust component in the mixture of helium and argon indicates important role of argon ionization process (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

ATOMKI-ECRIS由离子源向等离子体装置的改造

In order to extend the capabilities of the ATOMKI-ECRIS it is being transformed into a modified plasma device by changing its three main components with new ones.The cylindrical plasma chamber is replaced by a larger one(ID=10cm,L=40cm).A new NdFeB multi-pole radial trap was designed and purchased.The basic configuration is 6-pole,but 8-or 12-pole arrangements can also be formed later.The Dresent microwave source(2000W,14.5GHz)and two additional low-power,wide frequency TWT amplifiers give many opportunities to form plasmas with different sizes and characters. Actually a new facility with two sharply different operation modes is being established.All the modifications are reversible so the transformation of the ECRIS into this new device or back can be easily done.     

Langmuir Probe in Non‐Maxwellian Plasma: Correlation Between the Electron Energy Distribution Function,the Ion Energy at the Sheath Edge and the Floating Voltage

This work is devoted to the study of the Langmuir probe in non‐Maxwellian plasma, assuming mono‐energetic singly charged ions and a collisionless sheath. Using a general analytical equation for the Electron Energy Distribution Function (EEDF), we study the effect of the EEDF profile on: a) The ion energy at the sheath edge of a negatively biased collector, b) the I‐V probe characteristic and c) the floating voltage (V_p‐Vf). Different methods are used and compared to determine these parameters or characteristics. A correlation is given between the floating voltage, the ion energy at the sheath edge and the EEDF profile. The study is also extended to distribution functions with several components. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

二次电子发射和负离子存在时的鞘层结构特性

建立了包括电子、离子、器壁发射二次电子以及负离子多种成分的等离子体无碰撞鞘层的基本模型,讨论了二次电子发射和负离子对1维稳态等离子体鞘层结构的影响,并且分析了多种成分等离子体鞘层内的二次电子和负离子的相互作用。结果表明：二次电子发射系数的增加和负离子含量的增加,都将导致鞘层的厚度有所减小;二次电子发射系数超过临界发射系数之后,鞘层不再是离子鞘。随着器壁材料二次电子发射系数的增加,鞘层中的负离子密度分布也逐渐增加;负离子的增加,导致二次电子临界发射系数有所增加。另外,在等离子体鞘层中二次电子发射和负离子的存在,也影响着鞘层中电子的放电特性与器壁材料的腐蚀。     

Inductively Coupled Plasma and Electron Cyclotron Resonance Plasma Etching of an InGaAlP Compound Semiconductor System

Current and future generations of sophisticated compound semiconductor devices require the ability for submicron scale patterning. The situation is being complicated because some of the new devices are based on a wider diversity of materials to be etched. Conventional RIE (reactive ion etching) has been prevalent across the industry so far, but has limitations for materials with high bond strengths or multiple elements. In this article, we suggest high-density plasmas such as ECR (electron cyclotron resonance) and ICP (inductively coupled plasma), for the etching of ternary compound semiconductors (InGaP, AlInP, AlGaP) that are employed for electronic devices such as heterojunction bipolar transistors (HBTs) or high electron mobility transistors (HEMTs), and photonic devices such as light-emitting diodes (LEDs) and lasers. Operating at lower pressure, high-density plasma sources are expected to meet target goals determined in terms of etch rate, surface morphology, surface stoichiometry, selectivity, etc. The etching mechanisms that are described in this article can also be applied to other III-V (GaAs-based, InP-based) as well as III-Nitride, because the InGaAlP system shares many of the same properties.