Electrical properties of some crystalline salts of adenine

In the present paper we report the first experimental results on ac and dc conductivity and permittivity of adenine hemisulphate hydrate and adenine sulphate measured at atmospheric and high hydrostatic pressures. For both materials ac conductivity is of ^s type, where:s 1·1· Room temperature dc conductivity of adenine hemisulphate hydrate equals approximately 5×10^{–15 –1} cm^–1 with an activation energy of 0·86 eV; dc conductivity of adenine sulphate is less than 10^–16 cm^–1. On the basis of these measurements and those carried out at high pressure, it is concluded that conductivity of adenine hemisulphate hydrate is of electronic type.The authors wish to thank Dr. J. Zachová for the preparation of adenine salts single crystals.     

Features of current carrier scattering in epitaxial films

The properties of epitaxial cadmium selenide films obtained by condensation in a vacuum on mica substrates under almost equilibrium conditions are investigated. The temperature dependences of the conductivity and current carrier mobility and concentration are studied. The electron concentration in the films depended on the gas phase composition (coevaporation of CdSe + Se or CdSe + In) and varied between 5·10¹⁰cm^–3 and 3.5·10¹⁸. It is shown that the current carrier scattering mechanism depends on their concentration and production conditions. For n₁ 10¹⁶ cm^–2 (T_S520C),n₂ < 10¹⁵ (T_S=630C), scattering on intercrystallite barriers predominated. For n₁ and n₂ greater than the quantities mentioned, scattering by ionized defects becomes dominant. It is established that the magnitude of the intercrystallite barrier in films with 10¹⁵ < n < 10¹⁶ cm^–3 is comparatively small and does not exceed 4·10^–3 eV, whereupon scattering at the barriers is not explicitly manifest. Concentrations of the ionized centers, magnitudes of the intercrystallite barriers, and ionization energies of the donor levels are determined for films obtained under different conditions.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 98–103, September, 1977.     

Annealing behavior ot trap-centers in silicon containing A-swirl defects

The annealing behavior of trap-centers was studied in float-zone silicon wafers containing A-swirl defects. Samples from areas of high and low A-swirl density were annealed in nitrogen ambient between 100° and 900 °C, and analysed using the Deep Level Transient Spectroscopy. The results indicate, that two levels atE _c }-0.07 eV, _n=4.6×10^–16 cm², andE _c–0.49eV, _n=6.6×10^–16cm² are caused by one defect, for which the silicon di-selfinterstitial is a likely interpretation. A level atE _c }-0.11 eV was assigned to interstitial carbon. Both defects annealed out at about 170 °C. After 600 °C annealing an additional level atE _c–0.2 eV was detected, which was attributed to an interstitial silicon carbon complex. Heat treatment at 800 °C generated a new level atE _c–0.49 eV, _n=2.9×10^–16cm² only in the area of high A-swirl defect density. This level was also observed after oxidation and subsequent annealing of silicon.     

Neutron damage and annealing studies of copper-doped silicon solar cells

The effects of Cu-doping, oxygen and dopant on the fast neutron radiation damage of silicon solar cells are studied in this paper. The diffusion length damage coefficientK _L is defined as K_L= (1/L _i ² – 1/L _o ² )^–1= (1/L²)^–1. The (1/L²) values of n/p-type cells, measured at 300 and 80K, are smaller by about one order in magnitude than those of p/n-type cells. Characteristic curves of (1/L ²) values versus total neutron flux of p/n, n/p and copper-doped n/p-type cells begin to deviate from a 45° straight line around a total neutron flux of 10¹² to 10¹³ n cm^–2. The effect of copper-doping on the radiation resistant property is observed with high resistivity bulk n/p-type (20 to 40 -cm) cells, but not with low resistivity bulk n/p-type (10 -cm) cells at 300K. Values of (1/L ²) versus neutron flux, measured at 80K, are not affected by copper-doping, bulk dopant and oxygen concentration in the bulk region of n/p-type cells. The isochronal annealing of silicon solar cells depends on the total neutron flux, copper-doping and carrier injection during the annealing process. Namely, copper-doping and carrier injection enhance the annealing process of the neutron-induced defect clusters in n/p-type cells.     

Effect of electron irradiation on the electrophysical properties and photoluminescence of nuclear-transmutation-doped gallium arsenide

The Hall effect, the electric conductivity, and the photoluminescence spectra of electron irradiated (E=1 MeV, D=1.1·10¹⁵–3.8·10¹⁸ cm^–2) nuclear-transmutation-doped n-GaAs crystals and crystals of n-GaAs doped by the standard metallurgical method were investigated. The energy spectrum of the radiation-induced defects, determined from the Hall effect and DLTS spectra [E1–E5 traps with ionization energy 0.08, 0.14, 0.31, 0.71, and 0.9 eV, respectively (from the bottom of the C band)], is the same in nuclear-transmutation-doped and standard GaAs and satisfactorily describes the experimental dependence n(D). The rate of introduction of traps E1, E2 decreases as n₀ increases (from 1.3 cm^–1 in GaAs with n₀ — 10¹⁷ cm^–3 to 0.7 cm^–1 in GaAs with n₀ 10¹⁸ cm^–3). The rate of removal of charge carriers () increases as n₀ increases, irrespective of the method of growth and doping of GaAs. The isovalent impurity In in nuclear-transmutation-doped gallium arsenide with N_In 10¹⁸ cm^–3 decreases .Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 45–51, April, 1991.     

EPR study of neutron irradiated Ge-S glasses

The results of EPR measurements on neutron irradiated Ge-S glasses doped by Mn are presented. It has been found that the integrated neutron flux from 1·1 × 10¹⁵ n. cm^–2 to 1·5× × 10¹⁷n. cm^–2 has no detectable effect on the nearest neighbour surroundings of Mn²⁺ probing ions but increases the intensity of all EPR lines. A new EPR line was detected in Mn-doped Ge-S glasses irradiated with the highest neutron dose of 1·5 × 10¹⁷ n. cm^–2.     

Correlation of the Flux Tube Constant with the Nucleon Electric Polarizability

A three-quark shell model of the nucleon is used to calculate analytically thepolarizability using a scalar linear flux tube potential with no one-gluon exchangepotential included. A value of 12.02 × 10^–4 f ³ is obtained for the proton, ingood agreement with experiment, with the flux tube constant adjusted to reproducethe proton average rest energy. The magnetic polarizability of the proton isthen calculated as 1.51 × 10^–4 f ³, which is in agreement with the experimentalvalue. The neutron/proton electric polarizability ratio is calculated as 2/3, andthe neutron electric polarizability is predicted to be 8.01 × 10^–4 f ³.     

Laser gain by electron collisional pumping of Ar VII–V XII

Gain coefficients have been calculated for transitions of singlet levels ns–np of orbital n=4 and n=5 in magnesium-like ions with atomic numbers Z=18, 19, 20, 21, 22 and 23. Population inversions for 4p and 5p levels in these ions were also calculated, via electron collisional excitation, for electron temperature range of 93–231 eV and electron density range of 10¹⁶–10¹⁷ cm⁻³. Under these plasma conditions, the maximum gain that occurred for 4s–4p transition was at electron temperature of 231 eV and electron density of 4×10¹⁷ cm⁻³. Scaling of the maximum gain coefficients with atomic number Z and the plasma parameters is also presented.     

The dependence of the neutron temperature on the geometric parameter for water and loose diphenyl

The dependence of the neutron temperatureT _n on the geometric parameterB ² was measured by the pulse method in water and loose diphenyl. The measurements were made on a moderator poisoned by cadmium sulphate, a substance whose absorption cross-section is non 1/v.The following results were obtained: For waterT _n [eV]=–(0·00391±0·00045)B ² [cm^–2]+(0·02537±0·00035) for loose diphenyl:T _n [eV]=–(0·01014±0·00152)B ² [cm^–2]+(0·02518±0·00054).We are indebted to J. Jirou and J. Jadavan for their assistance in the measurements, the accelerator operation and electronic apparatus maintenance.     

Space- and time-resolved investigation of gain lines in Na-like copper

We report space- and time-resolved measurements of the gain coefficient for four gain lines in sodium-like copper. The lines investigated include the twon = 1 transitions 5g–4f and 5f–4d at 11.1 nm and 10.3nm and the twon = 2 transitions 6g–4f and 6f–4d at 7.2 nm, and 6.9 nm. The investigations were carried out for four irradiation intensities from 4 × 10¹² W/cm² to 3 × 10¹³ W/cm² using the Asterix IV high-power iodine laser at Garching (wavelength 1.315 µm, pulse duration 450 ps).The main results may be summarized as follows: On varying the laser intensity it was found that the highest values of the gain could be seen at an irradiation of 8 × 10¹² W/cm². For then = 1 lines the spatial maximum of the gain occurred at a distance of 300 µm from the target, and for then = 2 lines at 200 µm. The temporal gain maximum occurred at a time of 1.8 ns after the pulse maximum. The gain values range up to 2.6 cm^–1.Dedicated to the memory of the late Prof. Shi-shen Chen, who contributed to the early phase of this work     

Effect of vibrational kinetics of He2 + ions on the afterglow of a discharge in helium

A decaying weakly ionized helium plasma [n_e=(0.2–1.1)·10¹¹ cm^–3, p=(40–70) mm Hg] was studied experimentally. It is shown that the experimental time dependences of the intensities of atomic lines and molecular bands in the afterglow phase can be explained if the vibrational kinetics of He₂ ⁺ ions is included in the analysis. Analysis of the measurements shows that for n_e 10¹¹ cm^–3 and N_a 10¹⁸ cm^–3 deexcitation of He₂ ⁺ ions occurs primarily as a result of inelastic collisions with helium atoms. Based on the experimental data, an approximate value was obtained for the rate constants of the vibrational relaxation of molecular helium ions 10^–16 cm³/sec. These results are used for making a qualitative analysis of the distribution of He₂ ⁺ ions over the vibrational states in the discharge phase.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 88–96, November, 1986.     

Photoelectric properties of Pb1−x−y Sn x Ge y Te:In epitaxial films

Pb_1–x–y Sn _x Ge _y Te:In epitaxial films are examined in a wide temperature interval and at various background fluxes. These films have high sensitivity to infrared radiation in the spectral range <20m. The lifetime depends exponentially on temperature and varies from several seconds at T=10 K to 10^–2 s at T=20 K. The two-electron model of Jahn-Teller centers is proposed to explain the results. Multielement photoresistors based on these films are fabricated and D*=1.7×10¹³ cm Hz^1/2 W^–1 at T=25 K is achieved. Noise of the photoresistors is independent of background flux when it varies from 10¹² cm^–2 s^–1 to 10¹⁸ cm^–2 s^–1. As compared with Si:Ga and Ge:Hg photoresistors, the responsitivity is several orders larger at the operating temperature 25–30 K.     

Nuclear pumping of a3He-Cs metal-vapor mixture

Results of a spectroscopic study of low temperature atmospheric density³He-Cs plasmas created by the³He(n, p)³T reaction at a thermal neutron flux of about 8×10¹¹ n/cm² s are presented. Measurements were carried out using the steady state nuclear reactor of the Moscow Engineering Physics Institute as a neutron source in the temperature range 70–450°C. The possibility of direct nuclear pumped³He-Cs laser action is indicated by calculations ofnp,ns CsI level populations.     

Characterisation of the interface between GaAs: Cr substrates andn-type epitaxial GaAs layers by infrared multiple interference analysis

Infrared reflectivity measurements on vapour phase grownn-GaAs epitaxial layers (n=7×10¹⁶...5×10¹⁸ cm^–3) deposited on semi-insulating GaAs:Cr substrates show interference structures whose strength cannot be explained by the interference pattern of a simple two layer system. Assuming a third very thin (0.4 m) interfacial layer it is possible to describe the experimental results. For Te doping the carrier concentration in the interfacial film is higher than in the volume of the epitaxial layer; it is lower for Sn doping. The results of this nondestructive optical method were confirmed by conductivity measurements while etching the sample. The origin of the interfacial layer is discussed in terms of non-steady state conditions at the beginning of the epitaxial growth.     

Defects in pulsed laser and thermal processed ion implanted silicon

The evolution of the nature and concentration of the defects produced by 100 or 300 keV As ions at fluences 1 to 4×10^–12 cm^–2 inn-type, Fz Silicon doped with 10¹⁵ to 10¹⁶ cm^–3 has been studied as function of thermal treatments (in the range 500°–900 °C) and of the energy density (in the range 0.3–0.6 J cm^–2) of a light pulse from a ruby laser (15 ns, 0.69 m). Deep-level transient spectroscopy (DLTS) combined with capacitance — voltage (C-V) measurements were used to get the characteristics (energy level, crosssection for the capture of majority carriers) of the defects and theirs profiles. The difficulties encountered in the analysis of the results, due to the large compensation of free carriers in the implanted region and to the abrupt defect and free carrier profiles, are discussed in detail and the corrections to apply on the C-V characteristics and the DLTS spectra are described. The defects resulting from the two types of treatments are found to be essentially the same. Only, for laser energies higher than 0.5 J cm^–2, the laser treatment appears to introduced new defects (atE0.32 eV) which should result from a quenching process. The fact that a laser energy smaller than the threshold energy for melting and recrystallization is able to anneal, at least partially, the defects produced by the implantation, demonstrates that the annealing process induced by the laser pulse is not a purely thermal process but is enhanced by a mechanism involving ionization.     

Study of the Influence of the Excitation Laser Power Density on the Intermediate-Field Electric Modulation Component of the GaAs Photoreflection E 0-Signal

The influence of the excitation laser power density L on the amplitude A and characteristic time constant of the intermediate-field electric modulation component of photoreflection spectra measured in the region of the E ₀ fundamental transition of GaAs is studied. Crystalline samples with the charge carrier concentration n 10¹⁶ cm^–3 are investigated for L = 100 W/cm²–1 W/cm². A logarithmic dependence of the electric modulation signal on the excitation laser power density has been established for all examined samples. It is demonstrated that the observed change in the characteristic time constant does not have any noticeable effect on the dependence A(L).     

Calculation of the carrier-induced refractive index change in InSb

We report a theoretical model for an estimate of carrier-induced changes in the refractive index of InSb at room temperature. The dispersion of n within the photon-energy interval of 0.12–0.24 eV is investigated for nonequilibrium carrier concentrations of 10¹⁵–10¹⁸ cm^–3. An analysis of the influence of the initial carrier density on n is performed. The obtained results can help to develop InSb opto-electronic devices.     

Far infrared surface electromagnetic waves propagation on A3B5 semiconductors

The real and imaginary parts of surface electromagnetic waves (SEW) refraction index n_ef in n-type InSb, GaAs and InP have been measured in FIR region (=85–142 cm^–1). The n_ef measurements allowed to determine plasma frequency _p and plasmon damping . The obtained nonlinear SEW propagation distance L dependence on Te impurity concentration in GaAs (N=10¹⁷–10¹⁹ cm^–3) was explained taking into account the conduction band nonparabolity as well as the presence of isostructural phase transition at N=2×10¹⁰ cm^–3.     

VUV emission model of REB-heated plasma

VUV emission model of a hygrogen plasma with oxygen impurity (T _e=tens of eV,n _e 10¹⁴–10¹⁶ cm^–3,ⁿimp=1–3 % n_e) is constructed in order to judge different possibilities of plasma diagnostics (especiallyT _e measurements) in the REBEX experiments. Two sets of calculations based on the nonstationary corona model are performed: time dependent continuous and line spectra in the range 5 eV—5 keV in the constantT _e approximation (discussion ofT _e measurements by the filter-method) and time dependent intensities of selected spectral lines (2s-2p type) of ionsO ²⁺–O⁵⁺ at variableT _e (including plasma heating by REB and radiative cooling). A possibility of plasma energy content determination from radiation losses is shown.We would like to acknowledge many helpful discussions with dr. P. unka; we thank also dr. J. Ullschmied for comparing our results with diamagnetic measurements.     

Nonlinear Optical Characteristics of BSO and BGO Photorefractive Crystals in Visible and Infrared Ranges

Nonlinear refraction, nonlinear absorption and optical limiting in photorefractive crystals Bi₁₂SiO₂₀(BSO) and Bi₁₂GeO₂₀(BGO) at the wavelengths of 1064 and 532 nm were investigated. It was shown that both BSO and BGO crystals possess by positive nonlinear refraction in two investigated spectral ranges (n ₂ ^BSO=(2.5 ± 0.5)× 10^–12 esu, n ₂ ^BGO=(6.3 ± 1.3)× 10^–12 esu at equals 1064 nm; n ₂ ^BSO=(4.4 plusmn; 0.9)× 10^–12 esu, n ₂ ^BGO=(7.4 ± 1.5)× 10^–12 esu at = 532 nm). The nonlinear absorption was due to three-photon absorption at the wavelength of 1064 nm ( ⁽³⁾ _BSO=(2.5 ± 0.8)× 10^–20cm³W^–2, ⁽³⁾ _BSO=(4.4 ± 1.3)× 10^–20cm³W^–2) and two-photon absorption at the wavelength of 532 nm ( ⁽²⁾ _BSO=(2 ± 0.4)× 10^–9cm W^–1, ⁽²⁾ _BGO=(3.7 ± 0.7)× 10^–9cm W^–1).