Electrical conductance at initial stage in epitaxial growth of Pb on modified Si(1 1 1) surface

The electrical conductance and RHEED intensities as a function of the coverage have been measured during Pb depositions at 105 K on Si(1 1 1)-(6 × 6)Au with up to 4.2 ML of annealed Pb. The experiments show the strong influence of used substrates on the behavior of the conductance during the epitaxy of Pb atoms, especially for very initial stage of growth. Oscillations of the conductance during the layer-by-layer growth are correlated with RHEED intensity oscillations. The analysis of the conductance behavior is made according to the theory described by Trivedi and Aschcroft [N. Trivedi, N. Aschcroft, Phys. Rev. B 38 (1988) 12298].     

Conductance of Pb on modified Si(3 3 5) vicinal surface

Using the four-point probe method in UHV condition the conductance through a Si(3 3 5)-Au vicinal surface with deposited 6 ML of Pb is investigated in situ during the chain formation process, i.e. as a function of temperature. For the critical temperature, , a local minimum in the conductance is observed which is related to the structural transition of Pb from a two-dimensional film to one-dimensional chains. This process is confirmed by the RHEED technique. To describe theoretically the conductance behavior a tight-binding approach and the Green’s function technique are applied and a satisfactory qualitative agreement with experimental results is obtained.     

Accurate and analytical strain mapping at the surface of Ge/Si(0 0 1) islands by an improved flat-island approximation

We propose an extension of the well-known flat-island approximation in (1 + 1) dimensions which, while keeping simple analytical relations, allows one to better describe the strain field on the facets of steeper islands, and on the wetting layer between them. The results of atomistic molecular dynamics simulations using the Tersoff potential are used as a benchmark. The simple continuum approach is also shown to predict the correct trend of the strain gradients characterizing closely-spaced interacting islands, which has been recently observed to produce lateral motion of large Ge dots on Si(0 0 1).     

Cu(1 1 1) and Cu(0 0 1) surface electronic states. Comparison between theory and experiment

Recent advances in both the experimental resolution and in the computational capabilities motivate new studies of surface properties. In particular, a detailed comparison between theoretical and experimental data is expected to provide a better insight into surface and image states. In this work we present a joint effort analyzing such features of the Cu(1 1 1) and Cu(0 0 1) surfaces. The experiments are performed by using both linear and non-linear angle-resolved photoemission. From the theoretical point of view, we make use of the Green function embedding technique within density functional theory. We are able to account for the image states by suitably modifying the effective potential in the Kohn-Sham equation and the generalized boundary conditions on the Green function. Comprehensive theoretical and experimental results on the effective mass and the binding energy of the Shockley state and the first image states are reported.     

Structural evolution at the initial growth stage of perylene on Au(1 1 1)

We report on the structural evolution at the initial growth stage of perylene thin films on Au(1 1 1) surface. Scanning tunneling microscopy and spectroscopy have been employed to investigate the structural and electronic properties at 78 K. Rapid molecular diffusion was observed at low submonolayer coverage. Molecules form an ordered structure at monolayer coverage. For the second layer, impinging molecules nucleate into molecular islands with an ordered intermediate structure.     

Electronic structure and surface reconstruction of adsorbed oxygen on copper(0 0 1)

The electronic structure of the c(2 × 2) and the missing row phases of chemisorbed O on Cu(0 0 1) at a coverage of 0.5 monolayers has been calculated using a full-potential semi-infinite embedding technique. Calculations are made over a range of Cu-O layer spacings, and from the change in the work function, the effective charge on O is obtained. The effective charge is the same for both phases of the O/Cu(0 0 1) surface with a value of −0.3|e| on O, and consequently too small to drive any surface instability. The angular momentum-resolved density of states and energy-resolved charge densities are used to describe the binding and the spatial electronic overlap at the surfaces. In the reconstructed phase the O and the surface Cu atoms undergo displacements, which optimises the bonding.     

X-ray characterization of as-deposited, epitaxial films of Bi(0 1 2) on Au(1 1 1)

Electrodeposition is used to produce epitaxial single-crystal films on Au(1 1 1) substrates without annealing or other post-deposition modification. X-ray techniques show that the Bi(0 1 2) plane is parallel to the underlying Au(1 1 1) surface, and the azimuthal orientation of the films is determined. Combination of the X-ray data with in situ scanning tunneling microscopy (STM) images suggests a common growth mode from the first few layers up to thick films.     

Strain state in bcc Fe films grown on Si(1 1 1)

The strain state of Fe films grown on Si(1 1 1) has been investigated by X-ray diffraction (XRD) in the thickness range between 11 and 304 monolayers. Fe grows tetragonally distorted with the orientation relationship Fe(1 1 1) // Si(1 1 1) . At low coverage, the films grow pseudomorphic. Above 15 monolayers the films are characterized by the coexistence of a pseudomorphic phase with another one which relaxes with the Fe thickness. This relaxation proceeds rapidly in the earlier stages then slowly with the film thickness. The XRD characterization allows one to obtain quantitative information on the in-plane and out-of-plane strains.     

Effect of Pb adatom flux rate on adlayer coverage for Stranski-Krastanov growth mode on Si(1 1 1)7 × 7 surface

Lead (Pb) has been a prototypical system to study diffusion and reconstruction of silicon surfaces. However, there is a discrepancy in literature regarding the critical coverage at which island formation takes place in the Stranski-Krastanov (S-K) mode. We address this issue by studying the initial stages of evolution of the Pb/Si(1 1 1)7 × 7 system by careful experiments in ultra-high vacuum with in situ characterization by auger electron spectroscopy, electron energy loss spectroscopy and low-energy electron diffraction. We have adsorbed Pb onto clean Si(1 1 1 )7 × 7 surface with sub-monolayer control at different flux rates of 0.05 ML/min, 0.14 ML/min and 0.22 ML/min, at room temperature. The results clearly show that the coverage of the Pb adlayer before the onset of 3D Pb islands in the S-K mode depends on the flux rates. LEED results show the persistence of the (7 × 7) substrate reconstruction until the onset of the island formation, while EELS results do not show any intermixing at the interface. This suggests that the flux rates influence the kinetics of growth and the passivation of dangling bonds to result in the observed rate-dependent adlayer coverages.     

Silicon carbide nanocrystals growth on Si(1 0 0) and Si(1 1 1) from a chemisorbed methanol layer

SiC nanocrystals are grown at high temperature on Si(1 0 0) and Si(1 1 1) surfaces starting from a chemisorbed layer of methanol. The decomposition of this layer allows to have a well defined amount of carbon to feed SiC growth. Nanocrystals ranging from 10 nm to 50 nm with density from 100 μm⁻² to 1500 μm⁻² are obtained, and the total volume of produced SiC corresponds to carbon provided by the chemisorbed organic layer. Large differences in nanocrystal size and density, as well as in surface roughness, are observed depending on substrate orientation. The internal structure, crystallinity and epitaxy of nanocrystals grown on Si(1 0 0) are studied using cross-sectional transmission electron microscopy (XTEM), methanol adsorption and surface evolution using scanning tunnelling microscopy (STM). The joint application of XTEM and STM techniques allows a complete characterization of the geometry and chemical composition of these nanostructures.     

Growth of Si nanostructures on Ag(0 0 1)

The first stages of the growth of silicon on Ag(0 0 1) at moderate temperatures start by the formation of a p(3 × 3) superstructure, which continuously evolves with increasing coverage toward a more complex superstructure. In this paper, the atomic arrangement of the p(3 × 3) and of the “complex” superstructure has been investigated using scanning tunnelling microscopy, surface X-ray diffraction and low energy electron diffraction. The atomic model retained for the p(3 × 3) reconstruction consists in four silicon atoms (tetramers) adsorbed near hollow and bridge sites of the top most Ag(0 0 1) surface layer. For higher coverages, i.e., when the “complex” superstructure starts to develop, the silicon overlayer forms periodic stripes, most probably bi-layers, with a graphitic like structure.     

Ultrathin Fe film on Cu(0 0 1): Exchange splitting of image states from first principles

The theoretical investigation of the image states in front of an ultrathin iron film grown on copper has been performed by means of the embedding method and a recently developed procedure for the inclusion of the image potential tail in a first principle calculation. From the electronic response to an applied electric field, the image plane position has been evaluated. This also allows one to obtain useful information about the spin dependent screening properties of the system. Exchange splitting, effective mass, and lifetime of such surface states result in good agreement with recently performed two-photon photoemission experiments [see A.B. Schmidt, M. Pickel, M. Wiemhöfer, M. Donath, M. Weinelt, Phys. Rev. Lett. 95 (2005) 107402].     

Au island growth on a Si(1 1 1) vicinal surface

Au island nucleation and growth on a Si(1 1 1) 7 × 7 vicinal surface was studied by means of scanning tunneling microscopy. The surface was prepared to have a regular array of step bunches. Growth temperature and Au coverage were varied in the 255-430 °C substrate temperature range and from 1 to 7 monolayers, respectively. Two kinds of islands are observed on the surface: Au-Si reconstructed islands on the terraces and three-dimensional (3D) islands along the step bunches. Focusing on the latter, the dependence of island density, size and position on substrate temperature and on Au coverage is investigated. At 340 °C and above, hemispherical 3D islands nucleate systematically on the step edges.     

Structural analysis of Si(1 1 1)-√21 × √21-(Ag, Au) surface by using reflection high-energy positron diffraction

The Au adsorption induced √21 × √21 super-lattice structure on the Si(1 1 1)-√3 × √3-Ag structure has been investigated using reflection high-energy positron diffraction. The height of the Au adatom was determined to be 0.59 Å from the underlying Ag layer from the rocking curve analysis with the dynamical diffraction theory. The adatoms were preferentially situated at the center of the large Ag triangle of the inequivalent triangle structure of the Si(1 1 1)-√3 × √3-Ag substrate. From the intensity distribution in the fractional-order Laue zone, the in-plane coordinate of the Au adatoms was obtained.     

Shape variation in epitaxial microstructures of gold silicide grown on Br-passivated Si(1 1 1) surfaces

Kinetic Monte Carlo simulations for growth on substrates of three-fold symmetry predict the growth of islands of various shapes depending on the growth temperature [Phys. Rev. Lett. 71 (1993) 2967]. On Br-Si(1 1 1) substrates growth of epitaxial gold silicide islands of equilateral triangular and trapezoidal shapes have earlier been observed by annealing at the Au-Si eutectic temperature, 363 °C [Phys. Rev. B 51 (1995) 14330]. We carried out annealing with temperature variation within a small window--(363 ± 30) °C. This has led to island growth of additional shapes like regular hexagon, elongated hexagon, walled hexagon and dendrite. Some of the observed island shapes have not been predicted.     

Germanium growth on Br-terminated Si(1 0 0)

The consequences of Ge deposition on Br-terminated Si(1 0 0) were studied with scanning tunneling microscopy at ambient temperature after annealing at 650 K. One monolayer of Br was sufficient to prevent the formation of Ge huts beyond the critical thickness of 3 ML. This is possible because Br acts as a surfactant whose presence lowered the diffusivity of Ge adatoms. Hindered mobility was manifest at low coverage through the formation of short Ge chains. Further deposition resulted in the extension and connection of the Ge chains and gave rise to the buildup of incomplete layers. The deposition of 7 ML of Ge resulted in a rough surface characterized by irregularly shaped clusters. A short 800 K anneal desorbed the Br and allowed Ge atoms to reorganize into the more energetically favorable “hut” structures produced by conventional Ge overlayer growth on Si(1 0 0).     

Stranski-Krastanov like oxide growth on Ag(1 1 1) at atmospheric oxygen pressures

The oxidation behavior of Ag(1 1 1) was studied by means of in situ surface X-ray diffraction at atmospheric oxygen pressure. Exposure to 1 bar oxygen at 773 K reveals a competing growth of three different oxygen-induced structures on Ag(1 1 1), namely the well-known p(4 × 4) reconstruction, a surface oxide in a p(7 × 7) coincidence structure and the bulk oxide Ag₂O in orientation. The latter two exhibit the same honeycomb on hexagon arrangement of the Ag sublattice with respect to the Ag(1 1 1) surface. An inverted stacking of Ag planes in the bulk oxide islands is observed as compared to the Ag(1 1 1) substrate, which sheds new light on the Ag₂O formation process. Finally, we present a structural model of the p(7 × 7) reconstruction, based on a three-layer O-Ag-O slab of Ag₂O(1 1 1).     

Quantum conductance of In nanowires on Si(1 1 1) from first principles calculations

The quantum conductance of the paradigmatic quasi-one-dimensional In/Si(1 1 1) surface system is calculated for 4 × 1, 4 × 2 and 8 × 2 surface reconstructions. In agreement with experiment, we find the recently suggested formation of hexagons within the In nanowires [C. Gonzalez, F. Flores, J. Ortega, Phys. Rev. Lett. 96 (2006) 136101] to drastically modify the electron transport along the In chains. In contrast, the formation of trimers barely changes the quantum conductance.     

The epitaxial growth of Pd electrodeposition on Au(1 0 0) studied by LEED and RHEED

The epitaxial growth of Pd adlayers electrochemically deposited onto Au(1 0 0) has been studied by LEED, RHEED and AES. For the first 6 ML, the Pd deposits grow pseudomorphically on Au(1 0 0) with a lateral expansion of 4.5% with respect to bulk Pd. The strain in the expanded commensurate (1 × 1) Pd layers on Au(1 0 0) begins to be relieved at the Pd coverage between 6 and 9 ML range by formation of a compressed Pd film with respect to Au(1 0 0) surface and the compression increases continuously with thickness. At ca. 20 ML Pd the lattice constant of the film approaches to the bulk Pd and three-dimensional Pd islands develop since around 30 ML coverage. No superstructure due to the Pd-Au surface alloy can be found for coverages from monolayer up to 30 ML Pd on Au(1 0 0). A c(2 × 2) phase has been observed on the Pd-deposited Au(1 0 0) electrodes, which is ascribed to an ordered Cl adlayers adsorbed on Pd adlayers rather than a Pd-Au surface alloy.