Changes in optical and electrical properties and surface recombination velocity of n-type GaN due to (NH4)2Sx treatment

We have employed the photoluminescence (PL), surface photovoltage spectroscopy (SPS) and Hall effect measurements to study the effects of (NH₄)₂S_x treatment on the optical and electrical properties of n-type GaN (n-GaN) in this study. (NH₄)₂S_x treatment of n-GaN led to the decrease of the surface recombination velocity and the increase of the band-edge emission intensity, due to the accumulation of majority carriers and the repulsion of minority carriers near the (NH₄)₂S_x-treated n-GaN surface, the removal of the native oxide existed on the n-GaN, and sulfur passivation.     

P2S5/NH4OH处理GaAs(100)表面的电子能谱研究

采用俄歇电子能谱(AES)和X射线光电子能谱(XPS)研究了P₂S₅/NH₄OH钝化液处理的GaAs(100)表面的微观特性。AES测量表明,在钝化膜和GaAs衬底之间的界面处无O组分,只有P和S组分。XPS测量分析指出,经过P₂S₅/NH₄OH溶液处理后,GaAs表面处Ga₂O₃和As₂O_{3关键词：}     

Effects of (NH4)2Sx treatment on surface work function and roughness of indium-tin-oxide

In this study, the effects of an (NH₄)₂S_x treatment on the surface work function (SWF) and roughness of indium-tin-oxide (ITO) have been investigated. From the observed X-ray photoelectron spectroscopy results, optical transmittance measurements, atomic force microscopy measurements and four-point probe measurements, it is suggested that the surface chemical changes and an increase in the sheet resistance had strong effects on the SWF of ITO. We find that the S occupation of oxygen vacancies near the ITO surface after (NH₄)₂S_x treatment may result in a marked increase in the SWF and a slight increase in the surface roughness.     

Electronic structure and chemical bonding of phosphorus-contained sulfides InPS4, TI3PS4, and Sn2P2S6

The electronic structure of phosphorus-contained sulfides InPS₄, Tl₃PS₄, and Sn₂P₂S₆ was investigated experimentally with X-ray spectroscopy and theoretically by quantum mechanical calculations. The partial densities of electron states calculated with the ab initio multiple scattering FEFF8 code correspond well to their experimental analogues—the X-ray K- and L_2,3-spectra of sulfur and phosphorus. The good agreement between theory and experiment was also achieved for K-absorption spectra of S and P in the investigated sulfides. In spite of the difference in the crystallographic structure of InPS₄, TI₃PS₄, and Sn₂P₂S₆ that influence the form of K-absorption spectra, the electronic structure of their valence bands are rather similar. This is due to the strong interaction of the P and S atoms, which are the nearest neighbors in the compounds studied. The electron densities of p- and s-states of phosphorus are shifted by about 3 eV to lower energies in comparison to the analogous electron states of sulfur. This is connected with the greater electro-negativity of sulfur, and is confirmed by the calculated electron charge transfer from P to S.     

中性(NH4)2S溶液钝化GaAs(100)表面的研究

采用同步辐射光电子能谱(SRPES)结合扫描电子显微镜(SEM)和称量法，研究了中性(NH₄)₂S溶液钝化GaAs(100)表面，并与常规(NH₄)₂S碱性溶液钝化方法进行了比较- SRPES结果表明该处理方法可以产生较厚的Ga硫化物层和较强的Ga—S键，Ga的硫化物有好的稳定性-称量法表明该方法有更低的腐蚀速率-SEM结果表明该方法钝化处理的GaAs表面所产生的腐蚀坑数目少，直径小- 关键词：     

Effect of chemical surface treatments on interfacial and electrical characteristics of atomic-layer-deposited Al2O3 films on Ge substrates

The Ge surfaces were cleaned and passivated by two kinds of chemical pretreatments: conventional combination of HF + (NH₄)₂S, and new one of HBr + (NH₄)₂S. The chemical states and stability at passivated Ge surfaces were carefully characterized. The influence of chemical surface treatments on the interface and electrical properties of Al₂O₃ gate dielectric films on Ge grown by atomic layer deposition (ALD) has been investigated deeply. It is found that the combination of HBr and (NH₄)₂S can remove more Ge-O bonds on the Ge surface compared to that of conventional HF and (NH₄)₂S with excellent stability. X-ray photoelectron spectroscopy (XPS) reveals that HBr and (NH₄)₂S treated Ge surface has a mixture states of GeO_x (9.25%) and GeS (7.40%) while HF and (NH₄)₂S treated Ge surface has a mixture states of GeO_x (16.45%) and GeS (3.37%). And the Ge-S peak from the surface of Ge substrates decreases a little after the HBr and (NH₄)₂S treated Ge surface was exposed in the ambient for 300 min, which suggests the Ge surface is stable to oxidants. The Al₂O₃ films on HBr and (NH₄)₂S treated Ge substrates exhibits better electrical properties such as large capacitance, decreased leakage current density by ∼two orders of magnitude, and less C-V hysteresis. This indicates that a reduction in charge traps possibly at the interface and more interface traps are terminated by sulfur. The surface treatment of HBr and (NH₄)₂S seems to be very promising in improving the quality of high-k gate stack on Ge substrates.     

The defect density of a SiNx/In0.53Ga0.47As interface passivated using (NH4)2Sx

Passivation of the electronic defect states at a SiN_x/InGaAs interface has been achieved using (NH₄)₂S_x treatments of the InGaAs surface. The X-ray photoelectron spectroscopy technique was used to investigate the mechanism of sulfur passivation. The results indicate that sulfur treatment can effectively erase the native oxides, and S-In, S-Ga and S-As bondings are formed after sulfidation. The fabrication of Au/SiN_x/InGaAs metal–insulator–semiconductor diodes has been achieved by depositing a layer of SiN_x on (NH₄)₂S_x-treated n-InGaAs using the plasma enhanced chemical vapor deposition technique. The effect of passivation on the InGaAs surface before and after annealing was evaluated by current–voltage and capacitance–voltage measurements. The results indicate that the SiN_x passivation layer exhibits good insulative properties. The annealing contributes to the decrease of the fixed charge density and the minimum surface state density, which are 4.5×10¹¹ cm^-2 and 3.92×10¹¹ cm^-2 eV^-1, respectively. A 256×1 InP/InGaAs/InP heterojunction short-wavelength infrared detector, fabricated with the sulfidation plus a SiN_x passivation layer, has shown a good response uniformity of 4.81%. PACS 73.20.At; 73.40.Kp; 73.40.Rw; 81.40.Rs; 71.55.Eq     

Improved GaSb surfaces using a (NH4)2S/(NH4)2S04 solution

Bulk (1 0 0) n-GaSb surfaces have been treated with a sulphur based solution ((NH₄)₂S/(NH₄)₂SO₄) to which sulphur has been added, not previously reported for the passivation of GaSb surfaces. Au/n-GaSb Schottky barrier diodes (SBDs) fabricated on the treated material show significant improvement compared to that of the similar SBDs on the as-received material as evidenced by the lower ideality factor (n), higher barrier height (?_b) and lower contact resistance obtained. Additionally, the reverse leakage current, although not saturating, has been reduced by almost an order of magnitude at −0.2 V. The sample surfaces were studied by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The native oxide, Sb–O, present on the as-received material is effectively removed on treating with ([(NH₄)₂S/(NH₄)₂SO₄]+S) and (NH₄)₂S. Analysis of the as-received surface by XPS, prior to and after argon sputtering, suggests that the native oxide layer is ≤8.5 nm.     

PASSIVATION OF THE InP(100) SURFACE USING (NH4)2Sx

InP(100) surface treated with (NH₄)₂S_x has been investigated by using photolumines-cence(PL), Auger electron spectroscopy and X-ray photoelectron spectroscopy, It is found that PL intensity increased by a factor of 3.3 after (NH₄)₂S_x passivation and the sulfur remained on the surface only bonded to indium, not to phosphorus. This suggests that the sulfur atoms replace the phosphorus atoms on the surface and occupy the phosphorus vacancies.     

The spin glass-like behaviour of the glassy (Sb2S3)x(SbI3)yFez

Low field magnetic susceptibility of a glassy semiconductor (Sb₂S₃)_x(SbI₃)_yFe_z reveals a spin glass-like behaviour in spite of the sample not being metallic. The critical temperature is observed to depend on the concentration of the iron atoms (T_M = 0.179z^0.76).     

Chlorine K X-ray absorption-edge structures of CIS-[Pt(NH3)2Cl2], trans-[Pt(NH3)2Cl2], trans-[Pd(NH3)2Cl2] and (NH4)2PdCl4

The K absorption-edge spectra of the ligand chlorine ion in square-planar complex compounds cis- and trans-[Pt(NH₃)₂Cl₂], trans-[Pd(NH₃)₂Cl₂], and (NH₄)₂PdCl₄ are reported and discussed in connection with the chlorine K absorption spectra of K₂PtCl₄ and K₂PdCl₄, reported previously. The observed chemical shift of a white line at the absorption threshold is interpreted in terms of the difference of the ligand-field splitting of electronic states for metal ions. The white line is attributed to the electronic transition from the Cl^? ls level to the lowest unoccupied antibonding molecular orbital (MO), which is specified by a $\text{MO}\text{b}{}_{\mathrm{1g}}\text{(σ}{}^1\text{)}$ in the square-planar complex with D_4h symmetry. The other absorption structures are regarded as continuum “shape resonances” of the outgoing electron trapped by the cage of the surrounding atoms. The effect of geometrical isomerism is found in the chlorine K absorption spectra of cis- and trans-[Pt(NH₃)₂Cl₂].     

Low voltage electron induced cathodoluminescence degradation and surface characterization of Sr3(PO4)2:Tb phosphor

Tb³⁺-doped Sr₃(PO₄)₂ phosphor was prepared by a sol-gel combustion method. A trigonal structure having Sr and O atoms occupying two different lattice sites were obtained. Scanning Auger nanoprobe was used to analyze the morphology of the particles. Photoluminescence (PL) and cathodoluminescence (CL) properties of Sr₃(PO₄)₂:Tb powder phosphors were evaluated and compared. In addition, the CL intensity degradation of Sr₃(PO₄)₂:Tb was evaluated when the powders were irradiated with a beam of electrons in a vacuum chamber maintained at an O₂ pressure of 1 × 10⁻⁶ Torr or a background pressure of 1 × 10⁻⁸ Torr O₂. The surface chemical composition of the degraded powders, analyzed by X-ray photoelectron spectroscopy (XPS), suggests that new compounds (metal oxides) of strontium and phosphorous were formed on the surface. It is most likely that these compounds contributed to the CL intensity degradation of the Sr₃(PO₄)₂:Tb phosphors. The CL properties and possible mechanism by which the new metal oxides were formed on the surface due to a prolonged electron beam irradiation are discussed.     

Studies of thermal decomposition of (NH4)2Fe(SO4)2·6H2O

Thermal decomposition products of the Mohr salt (NH₄)₂Fe(SO₄)₂·6H₂O have been studied and identified using the Mössbauer effect, X-ray diffraction, infrared spectroscopy, and the gravimetric and thermal differential methods. It has been found that the Mohr salt heated for 96 hr. in air at 520K changes to a single substance identified as NH₄Fe(SO₄)₂ with a single Mössbauer line (width 0.30 mm/sec; isomeric shift 0.30 mm/sec). When the Mohr salt is heated for 1 hr. in air at 770 K it changes to Fe₂(SO₄)₃ with a single Mössbauer line (width 0.33 mm/sec; isomeric shift 0.31 mm/sec) strikingly similar to line of NH₄Fe(SO₄)₂.     

NMR spectral densities and two dimensional diffusion in TiS2(NH3)1.0 and TaS2(NH3)x

NMR measurements of proton spin-lattice relaxation times T₁ and T_1? in the layered intercalation compounds TiS₂(NH₃)_1.0 and TaS₂(NH₃)_x (x = 0.8, 0.9, 1.0) are reported as functions of frequency and temperature (100 K – 300 K). These observations probe the spectral density of magnetic fluctuations due to motions of the intercalated molecules at frequencies accessible to the T₁ (4–90 MHz) and T_1? (1–100 kHz) measurements. Since the average molecular hopping time (τ) can be changed by varying temperature, different regions of the spectral density can be examined. For T > 200 K, both T^?1₁ and T^?1_1? vary logarithmically with frequency, reflecting the two dimensional character of the molecular diffusion. The temperature dependence of T₁ suggests that a more accurate picture of the short time dynamics is required. No dependence of relaxation rate on vacancy concentration is found.     

Coulometric titration of copper in CuxMo6S8−y(0⩽y⩽0.4) with solid Cu-electrolyte Rb4Cu16I7Cl13

In order to determine the copper content x of copper Chevrel compound Cu_xMo₆S_8?y(0?y?0.4) as a function of copper activity a_Cu and sulfur deficit y, a solid state electrochemical cell, Cu/Rb₄Cu₁₆I₇Cl₁₃/Cu_xMo₆S_8?y/Pt, was constructed and coulometric titration studies were made at 400 K. For the evaluation of the coulometric titration data, measurements were made on the electronic conductivity of copper-ion conductor Rb₄Cu₁₆I₇Cl₁₃. Also, a brief investigation was made on the condition of formation of single phase Chevrel Cu_xMo₆S_8?y with varying x and y at 1000°C. The structural change of Cu_xMo₆S_8?y with a change in x and y was studied by the X-ray diffraction method. It was found that x for constant a_Cu decreases with increasing y. The maximum value x_max of x in Cu_xMo₆S_8?y in equilibrium with metallic copper was found to be expressed by $\text{x}{}_{\mathrm{<mtext>max</mtext>}}\text{=-(}\text{10}\text{3}\text{)y+5}$. In the region of y<0.3, x_max exceeded 4, contrary to a presupposition that x_max is less than 4. X-ray analysis revealed that most of the copper Chevrel compounds denoted by Cu_xMo₆S₈ so far were sulfur deficient ones with y?0.4. The importance of sulfur deficit on the properties of the copper Chevrel compound was emphasized.     

Optimisation of the ammonium sulphide (NH4)2S passivation process on In0.53Ga0.47As

The passivation of III-V semiconductor materials with sulphur is widely reported to reduce interface state defects and improve semiconductor device performance. The most common approach utilises ammonium sulphide ((NH₄)₂S), however there are wide variations in the reported processing parameters involved in this procedure. This study provides a comprehensive review of the various parameters used as well as determining the optimal processing conditions in terms of sample pre-treatments, temperature of the (NH₄)₂S solution, length of time the sample is in the solution and (NH₄)₂S concentration, by measuring the level of residual native oxides and surface roughness by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM), respectively.     

三甲基镓在Pd(111)表面吸附解离及表面预吸附H和O的影响

利用X-射线光电子能谱（XPS）和程序升温脱附谱（TPD）研究了三甲基镓在Pd（111）表面的吸附和解离行为,并考察了表面预吸附H和O的影响。结果表明,在吸附温度为140 K时,三甲基镓在Pd（111）上主要为解离吸附,此时表面物种为Ga（CH₃）_x （x=1,2,3）和CH_x物种。加热将导致Ga的甲基化合物中的Ga-C键发生分步断裂,在不同温度下产生CH₄和H₂从表面脱附。同时,XPS结果证实了在275~325 K的温度区间内存在Ga甲基化合物的分子脱附。退火至更高温度,表面只观察到积碳和金属Ga物种,这二者随着温度的继续升高逐渐向体相扩散。在Pd（111）表面预吸附O和H对上述吸附和解离行为存在显著的影响。当表面预吸附H时,脱附产物CH₄和H₂的脱附主要位于315 K,可归属为一甲基镓的解离脱附。当表面预吸附O时,只在258 K观察到CH₄和H₂的脱附峰,可能来自于Pd-O-Ga（CH₃）₂吸附结构的解离.     

Raman studies of (Fe,V)3S4 solid solution

Raman scattering of Fe_xV_3-xS₄ with 0?x?2 has been studied. The observed spectra of V₃S₄, one of the end members of this solid solution, have been assigned to the Raman active lattice modes based on the C_2h³ space group symmetry. On the basis of the results obtained for V₃S₄, the nature of the metal-metal interactions and the site distributions of Fe atoms in (Fe, V)₃S₄ have been discussed.     

H nuclear magnetic resonance study of the ferroelastic and superionic phase transitions of (NH4)4LiH3(SO4)4 single crystals

We investigated the temperature dependences of the line shape, spin-lattice relaxation time, T₁, and spin-spin relaxation time, T₂, of the ¹H nuclei in (NH₄)₄LiH₃(SO₄)₄ single crystals. On the basis of the data obtained, we were able to distinguish the “ammonium” and “hydrogen-bond” protons in the crystals. For both the ammonium and hydrogen-bond protons in (NH₄)₄LiH₃(SO₄)₄, the curves of T₁ and T₂ versus temperature changed significantly near the ferroelastic and superionic phase transitions at T_C (=232 K) and T_S (=405 K), respectively. In particular, near T_S, the ¹H signal due to the hydrogen-bond protons abruptly narrowed and the T₂ value for these protons abruptly increased, indicating that these protons play an important role in this superionic phase transition. The marked increase in the T₂ of the hydrogen-bond protons above T_S indicates that the breaking of O-H?O bonds and the formation of new H-bonds with HSO₄^- contribute significantly to the high-temperature conductivity of (NH₄)₄LiH₃(SO₄)₄ crystals.     

Synthesis and characterization of spherical core-shell particles SiO2@AgEu(MoO4)2

Submicron spherical SiO₂ particles have been coated with AgEu(MoO₄)₂ phosphor layers by a sol-gel process, followed by surface reaction at high temperature, to get core/shell structured SiO₂@AgEu(MoO₄)₂ particles. X-ray diffraction (XRD), Fourier-transformed infrared spectroscopy (FT-IR), field emission scanning electron microscopy (FE-SEM), and transmission electron microscopy (TEM) were used to characterize the structure and morphology of the resulted core-shell phosphors. The luminescent properties of the core-shell structured phosphors have also been measured at room temperature, and their photoluminescence (PL) spectra are similar to the pure AgEu(MoO₄)₂ phosphor prepared by the same sol-gel method exhibiting red emission.