共查询到20条相似文献,搜索用时 62 毫秒
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本文较系统地评述了光诱导化学汽相淀积(LCVD)技术淀积非晶硅薄膜的开发现状,主要介绍了LCVD淀积非晶硅薄膜 的机理.评价了LCVD淀积非晶硅薄膜的电学和光学特性,最后介绍了这种薄在制备晶硅太阳电池方面的应用. 相似文献
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Deposition of High Purity Parylene- F Using Low Pressure Low Temperature Chemical Vapor Deposition 总被引:1,自引:0,他引:1
P. K. Wu G. -R. Yang L. You D. Mathur A. Cocoziello C. -I. Lang J. A. Moore T. -M. Lu H. Bakru 《Journal of Electronic Materials》1997,26(8):949-953
Parylene-F, poly(tetrafluoro-para-xylylene) (PA-F), has potential applications in microelectronics because of its high thermal stability and low dielectric
constant. We found that a new precursor, 1,4-bis(trifluoromethyl) benzene (TFB) with a trace presence of α,α′-dibromo-α,α,α′,α′-tetrafluoro-p-xylene
(DBX), can be used to produce PA-F films. PA-F films from this precursor are produced using a reaction line and a conventional
deposition system. This process is simpler than previously reported processes and produces PA-F films with less impurities.
The dielectric constant of the PA-F films produced by this process is 2.25 ± 0.05 at 1 MHz. The deposition process and the
material properties of the PA-F films produced are presented. 相似文献
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采用热丝化学气相沉积(HFCVD)技术以甲烷(CH4)和硅烷(SiH4)作为源反应气体在Si(111)衬底上合成了纳米晶态SiC薄膜。通过X射线衍射(XRD)、扫描电镜(SEM)、高分辨透射电镜(HRTEM)以及光致发光(PL)检测技术对薄膜的晶体结构、表面形貌和PL特性进行了分析和表征。结果表明,在较低的衬底温度下所沉积的薄膜是由镶嵌于非晶SiC网络中的晶态纳米SiC构成。纳米晶粒平均尺寸约为6nm。室温下用HeCr激光激发样品,观到薄膜发出波长位于400~550nm范围内可见光辐射。 相似文献
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化学气相沉积(CVD))金刚石薄膜优异的光学性能在近几年得到了广泛的重视,关于它的研究也在近几年取得了较大的突破。综述了CVD金刚石薄膜的光学性能,着重从成核、生长和后期处理三个方面对光学级CVD金刚石薄膜的制备进行了讨论,并对今后的研究作了展望。 相似文献
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We report large-area synthesis of few-layer graphene films by chemical vapor deposition (CVD) in a cold-wall reactor. The
key feature of this method is that the catalytic metal layers on the SiO2/Si substrates are self-heated to high growth temperature (900°C to 1000°C) by high-current Joule heating. Synthesis of high-quality
graphene films, whose structural and electrical characteristics are comparable to those grown by hot-wall CVD systems, was
confirmed by transmission electron microscopy images, Raman spectra, and current–voltage analysis. Optical transmittance spectra
of the graphene films allowed us to estimate the number of graphene layers, which revealed that high-temperature exposure
of Ni thin layers to a carbon precursor (CH4) was critical in determining the number of graphene layers. In particular, exposure to CH4 for 20 s produces very thin graphene films with an optical transmittance of 93%, corresponding to an average layer number
of three and a sheet resistance of ~600 Ω/square. 相似文献
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AmorphousSiliconFilmsPreparedbyCatalyticChemicalVaporDepositionMethod①②ZHONGBoqiang,HUANGCixiang,PANHuiying(ShanghaiInstitute... 相似文献
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LIN Tao CAI Dao-min LI Xian-jie JIANG Li ZHANG Guang-ze 《半导体光子学与技术》2007,13(3):215-217,234
High performance InP/InGaAs heterojunction bipolar transistors(HBTs) have been widely used in high-speed electronic devices and optoelectronic integrated circuits. InP-based HBTs were fabricated by low pressure metal organic chemical vapor deposition(MOCVD) and wet chemical etching. The sub-collector and collector were grown at 655 ℃ and other layers at 550 ℃. To suppress the Zn out-diffusion in HBT, base layer was grown with a 16-minute growth interruption. Fabricated HBTs with emitter size of 2.5×20 μm2 showed current gain of 70~90, breakdown voltage(BVCE0)>2 V, cut-off frequency(fT) of 60 GHz and the maximum relaxation frequency(fMAX) of 70 GHz. 相似文献
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等离子增强化学气相沉积法制备Si-C-H薄膜 总被引:1,自引:0,他引:1
以SiH4和CH4为气源,在不同的工艺条件下用增强化学气相沉积(PECVD)方法制备了一系列Si-C-H薄膜,并对薄膜的结构和性能进行了一系列测试分析,研究了薄膜的结构性能特点以及CH4/SiH4比和射频功率等工艺参数对薄膜结构和性能的影响。发现薄膜中主要形成的是嵌有Si晶粒的非晶态SiC结构,H原子主要以C-H键形式存在。高的射频功率和CH4/SiH4比均有利于Si-C的形成,而较低的CH4/SiH4比可以提高薄膜的晶态率。薄膜的电阻率随着CH4/SiH4比的增大而增大,随着射频功率的增大而减小。 相似文献