Fast optical switching and bistability in room temperature CdHgTe at 10.6 μm

We report a study of optical switching in Cd_0.23Hg_0.77Te etalons at room temperature by two-photon excitation at 10.6μm. We compare experimental results of both fast switching using a short-cavity TEA CO₂ laser (FWHM = 30ns) and quasi-CW optical bistability using a hybrid TEA CO₂ laser (FWHM = 1.75μm), with a computer model.     

10.6 μm Infrared light photoinduced insulator-to-metal transition in vanadium dioxide

Vanadium dioxide has excellent phase transition characteristic. Before or after phase transition, its optical, electrical, magnetic characteristic hangs hugely. It has a wide application prospect in many areas. Now, the light which can make vanadium dioxide come to pass photoinduced phase transition range from soft X-ray to medium infrared light (6.9 μm, 180 meV). However, whether 10.6 μm (117 meV) long wave infrared light can make vanadium dioxide generate photoinduced phase transition has been not studied. In this paper, we researched the response characteristic of vanadium dioxide excited by 10.6 μm infrared light. We prepared the vanadium dioxide and test the changes of vanadium dioxide thin film’s transmittance to 632.8 nm infrared light when the thin film is irradiate by CO₂ laser. We also test the resistivity of vanadium dioxide. Excluding the effect of thermal induced phase transition, we find that the transmittance of vanadium dioxide thin film to 632.8 nm light and resistivity both changes when irradiating by 10.6 μm laser. This indicates that 10.6 μm infrared light can make the vanadium dioxide come to pass photoinduced phase transition. The finding makes vanadium has a potential application in recording the long-wave infrared hologram and making infrared detector with high resolution.     

Pulsed gas laser operating in the 0.193–10.6-μm range

Results are reported of an investigation of a system for exciting pulsed highpressure gas lasers. The method permits effective pumping of various active media, such as CO₂, excimer-molecules, N₂, etc. Lasing was obtained on seven different wavelengths in the range 0.193–10.6 m with pulse power more than 1 MW.Translated from Lazernye Sistemy, pp. 102–108, 1982.     

10.6μm的CO_2激光的电光频移

本文提出用CO_7激光器输出的线偏振光通过电光调制器和再生循环激光放大器,在不增大谐波分量条件下,可能大大提高转换效率,使电光频移具有广泛应用的可能性。在检验频移效果的实验中,用光束的自准往复和调制信号的空间延迟简化了实验装置。以简单的拍频方法分析了频移光的频率成分。     

大气气溶胶对10.6μm激光衰减的实验研究

实验研究初步证实10.6μm激光气溶胶衰减系数和能见度或气溶胶浓度之间的关系具有很大的不确定性,但就统计平均而言,二者之间还存在一定的关系,我们给出这种关系的近似表达式,并讨论了它在工程上的可能应用.     

10.6μm激光辐照下光学薄膜的微弱吸收测量

O484.5 2004064370 10.6μm激光辐照下光学薄膜的微弱吸收测量=Measurement of weak absorption of thin film coatings irradiated by 10.6μm laser[刊,中]/杨富(四川大学电子信息学院.四川,成都(610064)),黄伟…∥强激光与粒子束.—2004,16(3).—277-280 建立了表面热透镜技术测量光学薄膜微弱吸收的实验装置,对10.6μmCO_2激光辐照下镀制在Ge基底上的不同厚度的单层ZnS,YbF_3薄膜。以及镀制在Ge基底上不同膜系的(YbF_3/ZnSe)多层分光膜的弱吸收进行了测量,并对实验结果作了分析和讨论。实验结果表明,利用本实验系统已测得的待测样品的最低吸收为2.87×10~(-4),测量系统的灵敏度为10~(-5)。图3表2参6(于晓光)     

10.6μm激光辐照下光学薄膜的微弱吸收测量

 建立了表面热透镜技术测量光学薄膜微弱吸收的实验装置，对10.6μm CO₂激光辐照下镀制在Ge基底上的不同厚度的单层ZnS，YbF₃薄膜，以及镀制在Ge基底上不同膜系的（YbF₃/ZnSe）多层分光膜的弱吸收进行了测量，并对实验结果作了分析和讨论。实验结果表明，利用本实验系统已测得的待测样品的最低吸收为2.87×10^-4，测量系统的灵敏度为10^-5。     

10.6μm激光辐照下光学薄膜的微弱吸收测量

建立了表面热透镜技术测量光学薄膜微弱吸收的实验装置,对10.6μm CO2激光辐照下镀制在Ge基底上的不同厚度的单层ZnS,YbF3薄膜,以及镀制在Ge基底上不同膜系的（YbF3/ZnSe）多层分光膜的弱吸收进行了测量,并对实验结果作了分析和讨论。实验结果表明,利用本实验系统已测得的待测样品的最低吸收为2.87×10-4,测量系统的灵敏度为10-5。     

10.6μm激光诱导扩散中热致破坏的抑制

在半导体激光诱导扩散实验中,用连续波CO2 10．6μm激光聚焦后照射基片表面。为实现局部区域的选择扩散,激光光斑半径仅数十微米。要使曝光区温度达到扩散实验要求,必须使曝光区功率密度很高。另一方面,Si、InP等半导体材料对10．6μm波长激光的吸收系数随温度的升高而增大,这导致实验时容易产生热致破坏,损伤基片。在分析热致破坏的产生机理后,提出了在聚焦激光束照射下,曝光区温度的数值计算方法。计算结果表明,在半导体基片初始温度为室温时,以恒定功率的激光束照射基片,曝光区温度不能稳定在扩散试验需要的温度范围。在此基础上,提出了预热基片及对曝光区温度进行实时控制等抑制热致破坏的方法,有效地克服了这一困难。这对于用激光微细加工制作出高性能的单片光电集成电路(OEICs)器件有重要意义。     

10.6μm波段光子晶体负折射现象的实验验证

介绍了10.6μm波段扫描负折射功率的实时探测系统,在实验上为探测光子晶体光频波段负折射现象提供了实验平台。该系统通过数据采集卡实现计算机对旋转台及平移台的控制,在以光子晶体样品为探测中心的轨道上,对折射光的整个空间功率分布进行实时采集和绘图。这一实验系统能够精确便捷地实现负折射现象在光频波段的探测。根据折射光最大光功率出现的位置,测得光束通过光子晶体样品的负折射现象,而且与理论结果基本吻合。     

10.6μm收发合置天线的一种光隔离器

本文讨论了光隔离在收发合置相干激光雷达中的作用.分析了波片和内反射方式的1/4λ位相推迟器的特点,并研制了用于光隔离的多晶锗1/4λ菲涅耳菱体.该菱体较好地用于CO_2激光外差接收系统中,其能量转换效率达到93%以上.     

10.6μm的CO2激光的电光频移

本文提出用CO₂激光器输出的线偏振光通过电光调制器和再生循环激光放大器,在不增大谐波分量条件下,可能大大提高转换效率,使电光频移具有广泛应用的可能性。在检验频移效果的实验中,用光束的自准往复和调制信号的空间延迟简化了实验装置。以简单的拍频方法分析了频移光的频率成分。 关键词：     

The elimination of zero-order diffraction of 10.6 μm infrared digital holography

A new method of eliminating the zero-order diffraction in infrared digital holography has been raised in this paper. Usually in the reconstruction of digital holography, the spatial frequency of the infrared thermal imager, such as microbolometer, cannot be compared to the common visible CCD or CMOS devices. The infrared imager suffers the problems of large pixel size and low spatial resolution, which cause the zero-order diffraction a severe influence of the reconstruction process of digital holograms. The zero-order diffraction has very large energy and occupies the central region in the spectrum domain. In this paper, we design a new filtering strategy to overcome this problem. This filtering strategy contains two kinds of filtering process which are the Gaussian low-frequency filter and the high-pass phase averaging filter. With the correct set of the calculating parameters, these filtering strategies can work effectively on the holograms and fully eliminate the zero-order diffraction, as well as the two crossover bars shown in the spectrum domain. Detailed explanation and discussion about the new method have been proposed in this paper, and the experiment results are also demonstrated to prove the performance of this method.     

Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices

The experimental results of the cryogenic temperature characteristics on 0.18-μm silicon-on-insulator(SOI) metaloxide-silicon(MOS) field-effect-transistors(FETs) were presented in detail. The current and capacitance characteristics for different operating conditions ranging from 300 K to 10 K were discussed. SOI MOSFETs at cryogenic temperature exhibit improved performance, as expected. Nevertheless, operation at cryogenic temperature also demonstrates abnormal behaviors, such as the impurity freeze-out and series resistance effects. In this paper, the critical parameters of the devices were extracted with a specific method from 300 K to 10 K. Accordingly, some temperature-dependent-parameter models were created to improve fitting precision at cryogenic temperature.     

SF6分子的10.6μm高分辨射流冷却激光吸收光谱

六氟化硫(SF₆)是一种长寿命的温室气体,其红外吸收光谱对模拟大气辐射平衡非常重要. SF₆也是研究激光分离同位素原理和技术的典型体系之一.由于SF₆分子较重,其室温下的红外光谱非常密集,给利用吸收光谱技术监测不同SF₆同位素分子的相对浓度带来很大困难.本文利用超声射流冷却和像散型多程吸收池技术,测量了32SF₆和33SF₆同位素分子在10.6μm波段的高分辨红外激光吸收光谱.处于振动基态的32SF₆和33SF₆分子在狭缝型超声射流中的转动温度约为10 K,谱线线宽约为0.0008 cm^–1.在此条件下观测到了SF₆一个新的热带,其Q支的位置在941.0 cm^–1附近.将其初步归属为32SF₆的(v1+v2+v3)–(v1+v2)带,对该热带进行简化的转动分析,并讨论利用该热带和33SF₆的v3基频带进行...     

Dielectrophoretic adhesion of 50–300 μm particles under ambient atmospheric conditions

The SPABRINK EU project required temporary adhesion of coloured solid “ink” particles to form an image. We use dielectrophoretic force to attach ink particles under the field from a voltage applied to an interdigitated electrode on the image carrying surface.Finite element modeling results were compared in terms of an “adhesion factor” that included the density of particles as well as dielectric constant. In our experiments 50–300 μm alumina, silica sand and polymer particles were shown to adhere to a vertical plane electrode structure under laboratory ambient atmosphere.     

Resistance in sub-μm size GaAs lines

The electrical resistance in GaAs submicron mesa lines have been studied as a function of the line width. Using molecular beam epitaxy two types of conducting layers were made: an n⁺-layer and a two-dimensional electron gas confined to an (AlGa)As/GaAs heterostructure. Processing of the lines was made by photolitography, electron beam litography and ion etching. Resistance data at 77 K and 300 K are discussed for line widths in the interval 0.2 to 5 μm. A size dependent conduction was found and interpreted in terms of geometry induced limitation of the effective conducting path.     

Wavelength-modulation spectroscopy near 2.5 μm for H2O and temperature in high-pressure and -temperature gases

The design and validation of a tunable diode laser (TDL) sensor for temperature and H₂O in high-pressure and -temperature gases are presented. High-fidelity measurements are enabled through the use of: (1) strong H₂O fundamental-band absorption near 2.5 μm, (2) calibration-free first-harmonic-normalized wavelength-modulation spectroscopy with second-harmonic detection (WMS-2f/1f), (3) an experimentally derived and validated spectroscopic database, and (4) a new approach to selecting the optimal wavelength and modulation depth of each laser. This sensor uses two TDLs near 2,474 and 2,482 nm that were fiber coupled in free space and frequency multiplexed to enable measurements along a single line-of-sight. The lasers were modulated at 35 and 45.5 kHz, respectively, to achieve a sensor bandwidth of 4.5 kHz. This sensor was validated in a shock tube at temperatures and pressures ranging from 1,000 to 2,700 K and 8 to 50 bar. There the sensor resolved transients and recovered the known steady-state temperature and H₂O mole fraction with a precision of 3.2 and 2.6 % RMS, respectively.     

Scanned-wavelength-modulation spectroscopy near 2.5 μm for H2O and temperature in a hydrocarbon-fueled scramjet combustor

The design and demonstration of a two-color tunable diode laser sensor for measurements of temperature and H₂O in an ethylene-fueled model scramjet combustor are presented. This sensor probes multiple H₂O transitions in the fundamental vibration bands near 2.5 μm that are up to 20 times stronger than those used by previous near-infrared H₂O sensors. In addition, two design measures enabled high-fidelity measurements in the nonuniform flow field. (1) A recently developed calibration-free scanned-wavelength-modulation spectroscopy spectral-fitting strategy was used to infer the integrated absorbance of each transition without a priori knowledge of the absorption lineshape and (2) transitions with strengths that scale near-linearly with temperature were used to accurately determine the H₂O column density and the H₂O-weighted path-averaged temperature from the integrated absorbance of two transitions.