Mechanism of condensation of heteroepitaxial A3B5 layers pulse of moderate power

The mechanism of condensation of heteroepitaxial layers in laser deposition was studied on GaAs films on NaCl. Films were deposited in a superhigh vacuum using laser pulses of moderate power. Pulsed deposition proved to be more suitable for nucleation and growth than continuous deposition. However in this case it is important to compare the number of atoms deposited per pulse and the number of preferential adsorption centres in the substrate temperature of 310 °C. The density of dislocations in the films was about 10⁹ cm⁻². The main reasons for the dislocations are the excess of low volatile component and thermal stresses. Using a laser with quantum energy higher than the energy gap of the deposited semiconductor GaAs, which provides congruent evaporation, and making an additional deposition of As, we could reduce dislocations to 10⁷ cm⁻². A mechanism is proposed to explain the reduction of temperature in single crystal growth under laser deposition: high energy ion component of laser plasma gives rise to orienting defects on the substrate surface, and these defects determine epitaxial growth.     

Two‐ and three‐dimensional growth modes of nitride layers

Heteroepitaxial three dimensional (3D) and two dimensional (2D) growth modes of nitride layers on sapphire substrates are discussed. It is shown that the 3D or 2D growth mode of AlGaN layers depends predominantly on the growth conditions of the underneath low temperature (LT) nucleation layer. Commonly described in literature 3D growth mode is achieved on LT GaN or AlN nucleation layer grown relatively fast. Successive growth of secondary layer at high temperature begins from separated sites, where individual 3D crystallites are formed. Threading dislocations present in crystallites bend on their facets, which reduces the quantity of dislocations. However, slight crystallographic misorientations between crystallites lead to the creation of new dislocations during coalescence of the crystallites. As a result, edge and mix dislocations appear at similar densities of about 10⁹ cm^‐2. Modification of growth conditions of LT AlN nucleation layer, especially reduction of their growth rate, leads to drastic changes in properties of the layer. Successive growth of secondary AlGaN layer at high temperature starts evenly on whole surface retaining atomic flatness. Thus growth at high temperature occurs only by 2D mode. Therefore, it is possible to grow a very thin AlGaN layers directly on top of LT nucleation layer. Such layers contain large number (10¹⁰ cm^‐2) of edge dislocations, and relatively small number (less then 10⁸ cm^‐2) of mix dislocations. It is also shown that the decisive factor determining the growth mode of AlN nucleation layer is a growth of the first few atomic layers on substrate surface. The slow growth of these few first atomic layers decide about the 2D growth mode, and the fast one about the 3D one. The model explaining this difference is presented as well. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Study on the Morphological Change of Growing Ag Crystallites by in-situ SEM Observation

The morphology of the initial growth stage of Ag thin films on Mo(110) substrate was investigated in-situ by the scanning electron microscope (SEM). A great majority of the Ag crystallites showed a truncated Wulff's equilibrium shape of the face-centered-cubic (fcc) structure with epitaxial orientation [1 0]Ag//[11 ]Mo, (111)Ag//(110)Mo with the substrate temperature of 400 °C. In-situ SEM observation during the growth revealed two kinds of particular morphological change of Ag crystallites, namely (1) rotation of an Ag crystallite and (2) reformation of the crystal faces of the Ag crystallite. However, a small number of Ag crystal particles showed Wulff-polyhedron truncated by the (100) plane parallel to the substrate surface (oriented to the 〈100〉 axis normal to the substrate surface).     

BaMoO4 thin films prepared by electrochemical method at room temperature

Highly crystallized BaMoO₄ films were prepared on molybdenum substrates in Ba(OH)₂ solutions by electrochemical method at room temperature. The deposition conditions (reaction temperature and current density) during electrochemical formation were researched. The films were characterized by using the X‐ray Diffraction (XRD), Scanning Electronic Microscopy (SEM) and X‐ray Photoelectron Spectroscopy (XPS) analyses. The XRD analyses show that the films are good crystalline with single scheelite‐type tetragonal structure; the SEM photographs show that the films are densely deposited with double tetragonal tapers in shape; and the XPS analyses reveal that the composition of the BaMoO₄ films (embodied Ba²⁺, Mo⁶⁺ and O^2‐) is in agreement with stoichiometry. The optimum electrochemical conditions for BaMoO₄ films formation are the lower reacting temperature (near room temperature) and the feasible current density (about 1mA/cm²)     

Influence of substrate temperature on the properties of electron beam evaporated ZnSe films

ZnSe films were deposited on glass substrates keeping the substrate temperatures, at room temperature (RT), 75, 150 and 250 °C. The films have exhibited cubic structure oriented along the (111) direction. Both the crystallinity and the grain size increased with increasing deposition temperature. A very high value of absorption co‐efficient (10⁴ cm^‐1) is observed. The band gap values decrease from a value of 2.94 eV to 2.69 eV with increasing substrate temperature. The average refractive index value is in the range of 2.39 – 2.41 for the films deposited at different substrate temperatures. The conductivity values increases continuously with temperature. Laser Raman spectra showed peaks at 140.8 cm^‐1, 246.7 cm^‐1and 204.5 cm^‐1which are attributable to 2TA LO phonon and TO phonon respectively. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

MBE growth of PbSe thin film with a 9×10 cm etch-pits density on patterned (1 1 1)-oriented Si substrate

PbSe thin film was grown on a patterned Si substrate with (1 1 1)-orientation by molecular-beam epitaxy (MBE). On the mesa, a low dislocation density of 9×10⁵ cm⁻² was confirmed by the etch-pits density (EPD) wet-etching technique. The photoluminescence (PL) intensity at room temperature from the low dislocation PbSe film was much higher than that from the PbSe film grown on the planar area, which further indicated the high-quality of PbSe thin film grown on patterned Si substrate.     

Reducing dislocation density in GaN films using a cone-shaped patterned sapphire substrate

The threading dislocation (TD) density in GaN films grown directly on flat sapphire substrates is typically >10¹⁰/cm², which can deteriorate the properties of GaN-based LEDs significantly. This paper reports an approach to reducing the TD density in a GaN layer using a variety of patterned sapphire substrates (PSS). A cone-shaped PSS produced by metal organic chemical vapor deposition (MOVCD) was used for GaN deposition. Three types of GaN specimens were prepared at the initial nucleation stage, middle growth stage and final growth stage. The TDs generated on the cone-shaped PSS were analyzed by transmission electron microscopy (TEM) and a strain mapping simulation using HRTEM images, which evaluated the residual strain distribution. A large number of TDs were generated and the residual strain by the lattice distortions remained above the top of the cone-shaped regions. However, no TDs and residual strain were observed at the slope of the cone-shaped regions. This might be due to the formation of a GaN layer by lateral overgrowth at the slope of the cone-shaped regions, resulting in less lattice mismatch and incoherency between the GaN and sapphire. In conclusion, the TD density in the GaN layer could be reduced significantly, approximately 10⁷/cm², using the cone-shaped PSS.     

Dynamics of low temperature PECVD growth of microcrystalline silicon thin films: Impact of substrate surface treatments

Microcrystalline silicon (μc-Si) films have been deposited on polyimide, Corning glass and c-Si(0 0 1) by rf plasma-enhanced chemical vapour deposition (PECVD) using both SiF₄–H₂ and SiH₄–H₂ plasmas. The effect of substrate pre-treatment using SiF₄–He and H₂ plasmas on the nucleation of crystallites is investigated. Real-time laser reflectance interferometry monitoring (LRI) revealed the existence of a ‘crystalline seeding time’ that strongly impacts on the crystallite nucleation, on the structural quality of the substrate/μc-Si interface and on film microstructure. It is found that SiF₄–He pre-treatment of substrates is effective in suppressing porous and amorphous interface layer at the early nucleation stage of crystallites, resulting in direct deposition of μc-Si films also on polyimide at the temperature of 120 °C.     

在预涂陶瓷过渡层的多谱段ZnS衬底上沉积金刚石膜的探索研究

本文采用真空电子束蒸镀技术在多谱段ZnS衬底上沉积了适合金刚石膜沉积的致密陶瓷过渡层,并利用微波等离子体CVD金刚石膜低温沉积技术进行了金刚石膜沉积研究.发现在陶瓷过渡层上的金刚石形核极其困难,其原因可能是陶瓷涂层在沉积过程中龟裂导致ZnS蒸汽扩散逸出干扰金刚石形核所致.本文采用诱导形核技术在过渡层/ZnS试样表面观察到极高密度(1010/cm2)的金刚石形核,并对金刚石/过渡层/ZnS试样的红外透过特性进行了评价.     

Properties of a-Si:H prepared by the photochemical decomposition of Si2H6

High quality a-Si:H films have been prepared by the direct photolysis of disilane at a substrate temperature below 350 °C. The growth rate is independent of substrate temperature for both undoped and phosphorus doped films, while it is thermally activated and dramatically enhanced by boron doping. The hydrogen content decreases from 7 to 2 at.%, as deposition temperature is varied from 200 to 300 °C. The photoconductivity as high as 3.7 × 10^?4 Ω^?1cm^?1 (AM1 100 mW/cm²) has been obtained and no light soak degradation was observed.     

Influence of substrate temperature on the properties of vacuum evaporated InSb films

Indium Antimonide (InSb) thin films were grown onto well cleaned glass substrates at different substrate temperatures (303, 373 and 473 K) by vacuum evaporation. The elemental composition of the deposited InSb film was found to be 52.9% (In) and 47.1% (Sb). X‐ray diffraction studies confirm the polycrystallinity of the films and the films show preferential orientation along the (111) plane. The particle size (D), dislocation density (δ) and strain (ε) were evaluated. The particle size increases with the increase of substrate temperature, which was found to be in the range from 22.36 to 32.59 nm. In Laser Raman study, the presence of longitudinal mode (LO) confirms that the deposited films were having the crystalline nature. Raman peak located at 191.26 cm^–1 shift towards the lower frequencies and narrows with increase in deposition temperature. This indicates that the crystallinity is improved in the films deposited at higher substrate temperatures. Hall measurements indicate that the films were p‐type, having carrier concentration ≅10¹⁶ cm^–3 and mobility (4–7.7) ×10³ cm²/Vs. It is observed that the carrier concentration (N) decreases and the Hall mobility (μ) increases with the increase of substrate temperature. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Droplet epitaxy of zinc-blende GaN quantum dots

Zinc-blende GaN quantum dots were grown on 3C-AlN(0 0 1) by a vapor–liquid–solid process in a molecular beam epitaxy system. We were able to control the density of the quantum dots in a range of 5×10⁸–5×10¹² cm⁻². Photoluminescence spectroscopy confirmed the optical activity of the GaN quantum dots in a range of 10¹¹–5×10¹² cm⁻². The data obtained give an insight to the condensation mechanism of the vapor–liquid–solid process in general, because the GaN quantum dots condense in metastable zinc-blende crystal structure supplied by the substrate, and not in the wurtzite crystal structure expected from free condensation in the droplet.     

Initial stages of nucleation of carbide phases in oxide melts

The initial stages of nucleation of Mo₂C and W₂C crystals in the tungstate-molybdate-carbonate melts of the known compositions on Ag, Au, Cu, Pt, and Ni substrates are studied by the method of electrodeposition depending on the electrocrystallization conditions—temperature, deposition time, initial current pulse, and current density.     

Pressure Dependence of C–V Curve for Ferroelectric PbTiO3 Thin Films Prepared by RF Multi-target Magnetron Sputtering

Lead titanate thin films were prepared in-situ by RF magnetron sputtering method in the substrate temperature region of 550 °C ˜ 650 °C using Ti and Pb metal targets and oxygen gas. The films deposited at 650 °C for 60 min – when the applied power to the Ti and Pb target and deposition pressure were 200 W, 40 W, and 1.8 × 10⁻² Torr, respectively — had stoichiometric composition ratio and shown X-ray diffraction patterns of tetragonal structure like that of the powder. For the application to the piezoelectric field effect transistor (PI-FET), the substrate of SiO₂ (50 nm)/p-Si(100) was used. Leakage current density of the thin film was 7 × 10⁻⁸ A/cm² at 100 kV/cm, dielectric breakdown voltage was 1.8 MV/cm, and so it showed high insulator characteristics. Capacitance-voltage curve was measured as a function of pressure. The variation width of the capacitance was 6.5 pF at bias voltage of –4 volts, and the value increased linearly according to the pressure up to about 6 kgf/cm², and was saturated at the pressure of 8 kgf/cm².     

Electrical and infrared optical properties of CdIn2S4 single crystals grown by chemical transport

Single crystals of CdIn₂S₄ were grown by chemical transport with iodine as transporting agent using different transporter concentrations and temperature gradients. It is found that the electron concentration increases with increasing transporter concentration and decreases after annealing in a sulphur atmosphere. Infrared reflectivity and absorption spectra are measured at room temperature in the wavenumber range from 180 to 4000 cm⁻¹ in order to determine the optical mode parameters of the compound and to evaluate the scattering mechanism of the electrons from the free carrier absorption. Lattice scattering is found to be predominant at room temperature for electron concentrations below about 4 · 10¹⁷ cm⁻³.     

Formation of amorphous Mn-Bi films and their crystallization process

Mn-Bi alloy films were prepared by simultaneous vacuum deposition at liquid N₂ temperature and their structures were investigated by transmission electron microscopy and electron diffraction. Films with compositions in the range of 34 to 63 at% Mn have the Bi lattice structure at room temperature. Films with composition in the range of 68 to 95 at% Mn show diffuse haloes at room temperature. When they are heated above room temperature, those in the range of 70 to 85 at% Mn show nucleation and grain growth crystallization, whereas the films of 68 and 95 at% Mn show only grain growth crystallization. The films in the range of 70 to 85 at% Mn are concluded to be amorphous at low and at room temperature. Some of the crystals obtained by nucleation and the grain growth crystallization grow as large as 10 μm in length. Their diffraction patterns are not ascribable to reported crystals in this alloy system.     

Crystal growth and characterization of Au3+ ion irradiated 2-amino-5-nitropyridinium hydrogen oxalate (2A5NPHO)

2-amino-5-nitropyridinium hydrogen oxalate (2A5NPHO) was grown using slow evaporation and bulk crystal of 2A5NPHO was harvested from Assembled Temperature Reduction (ATR) method. Cut and polished crystal was irradiated using Au³⁺ ion with various fluences. Electronic loss, nuclear energy loss and penetration depth were calculated using SRIM software. It was observed in X- ray pattern that intensity of peak was reduced. Intensity of peak decreased with increase of ion fluencies from 10¹³ ions/cm² to 10¹⁴ ions/cm². Optical properties were measured using UV-Vis spectrometer. The increase of absorption was due to excited electrons which were formed by vacancies and formation of additional defects centres. Energy band gap of irradiated crystals increased with increase of ion fluence. Energy band gap of irradiated crystals were 3.39 eV, 3.42 eV, and 3.4 eV for 10¹³ ions/cm², 5 × 10¹³ ions/cm² and 10¹⁴ ions/cm² respectively and increase of band gap was due to the increase of forbidden gap. Microhardness was calculated using Vicker's Hardness tester. Increase of microhardness in irradiation crystal was due to increase of high density lattice defects produced by Au³⁺ of 10.8 MeV. Electrical property was calculated using dielectric constant. Increase of dielectric constant was due to large polarization which caused by disorderness and rich defects in the crystalline surface. Decrease of intensity peak in fluorescence was due to transition of excited electron to intermediated energy levels from excited state which converted into vibrational energy of lattice atoms (phonon). Morphology of irradiated crystal was seen using scanning electron microscope (SEM). It was observed from the SEM image that surface of crystal was heavily damaged. It was also noticed that the thermal stability of the irradiated single crystal increased with increase of ion fluences. Impedance of irradiated crystal was measured. The bulk resistance and grain boundary resistance also were calculated.     

Water diffusion coefficient measurements in deposited silica coatings by the substrate curvature method

The diffusion of water in silica coatings deposited by evaporation and physical vapor deposition (sputtering) is studied using the substrate curvature measurement technique. The diffusion of water into the coatings induced a swelling, which in turn caused bending (curvature) of the silicon substrate. The curvature change was measured in situ during a humidity increase from 0% to 95% at room temperature. The diffusivity of water in the sputtered silica coating was measured to be 10 × 10^?12 cm²/s and achieved equilibrium in about 10 min. The diffusion of water in the evaporated silica coating achieved equilibrium in about 2 min. Because the coatings exhibited very short equilibration times, the impact of a non-instantaneous humidity change on the calculated diffusion coefficients was also examined.     

The growth of GaAs and InAs dots on etched mesas: The effect of substrate temperature on mesa profile and surface morphology on dot distribution

The molecular beam epitaxy (MBE) growth of GaAs and InAs quantum dots on etched mesas has been studied using scanning electron microscopy (SEM) and atomic force microscopy (AFM). The [0 1 1]-oriented mesas are etched into (1 0 0) GaAs substrates, exposing (5 3 3)B sidewall facets. At a substrate temperature of 610 °C a top (1 0 0) plane is seen to evolve on a ridge mesa structure. Alternatively, if the overgrowth is carried out at 630 °C no such facet is seen, and the top ridge remains unchanged during GaAs growth. By controlling the mesa shape, either ordered lines of dots can be grown or the dot density can be varied from <5×10⁸ cm⁻² to >1×10¹¹ cm⁻² on the same substrate in pre-defined regions. The dot distribution observed on the mesa sidewalls and top is discussed in terms of net migration of adatoms from different facets, underlying step density, step height and surface curvature of the mesa top.     

Investigation of InxGa1−xAs films grown from thin solution layer

In_xGa_1−xAs films with x⩽0.12 were grown from a thin solution layer between substrates. The calculation of final film thickness as a function of liquid phase composition, based on supposition of film deposition only on the substrate, is in a good agreement with experimental results. The dependences between compositions of liquid and solid phases at 800°, 750° and 700°C were determined. The morphology of the film surface was investigated as a function of liquid phase composition and (100), (111) A, (111) B substrate orientations. Dislocation density increases from 10⁴ cm⁻² to 10⁷ cm⁻² with change of x from 0 to 0.12.