碲锌镉单晶体的(110)面蚀坑形貌观察

本文报道了一种能够在室温下择优腐蚀碲锌镉(CZT)单晶体(110)晶面的腐蚀液配方,并对富Cd生长的CZT晶体蚀坑形貌进行了扫描电镜观察.结果表明晶体(110)面腐蚀坑形状为三角形,并初步对蚀坑的成因进行了分析,估算出CZT(110)面蚀坑密度约为103～105/cm2数量级.这说明富Cd原料的改进布里奇曼法可以生长出低蚀坑密度的CZT单晶体.     

硫镓银晶体(112)面蚀坑形貌研究

本文报道了一种能在室温下对硫镓银晶体(112)面进行择优腐蚀的新腐蚀液配方,采用新腐蚀液对改进的Bridgman法生长的AgGaS2晶体进行腐蚀,用扫描电镜对蚀坑进行了观察,得到了清晰的(112)面蚀坑形貌,形状为三角锥形.初步解释了蚀坑的形成原因.AgGaS2晶体低指数的{100}面的腐蚀速度较慢,在腐蚀过程中逐渐显露出来,最终使晶体(112)面呈现出三角锥形蚀坑形貌.     

Chiral Symmetry Breaking in Sodium Chlorate Crystallization from Unstirred Solution

Statistics of nucleation of chiral forms of sodium chlorate from unstirred, achiral solutions was studied. The trimodal distribution of enantiomers was obtained in which apart from the peak for the same probability of the creation of L and D crystals, two other maxima for the large enantiomeric excesses of L and D forms were present. The first nucleated crystals govern the handedness of the secondary crystals and the formation of pure enantiomers and high enantiomeric excesses in crystallization from unstirred, unseeded solutions are caused by the process of chiral symmetry breaking rather than statistical fluctuations.     

Change in morphology and dislocation Etch Pits on the (010) Surface of Magnesium Orthosilicate Crystals

Investigations made on the etching behaviour of magnesium orthosilicate crystals in hydrochloric acid and melts of potassium and sodium hydroxides are described. It is shown that the morphology and orientation of the etch pits depend upon the concentration, composition and temperature of the etchant used. At low concentrations of HCl acid solution, the boat shaped pits produced are oriented along [100] direction while in concentrated acid, the hexagonal pits produced are oriented along [001] direction. At intermediate concentrations of about 5 N HCl acid the pits are square. KOH melt at 400 °C is found to produce rectangular pits with their longer sides parallel to [100] direction. The effect of a mixture of KOH and NaOH in different proportions in the melt is investigated. It is observed that square pits are obtained in melt of the mixture of KOH and NaOH in the proportion of 6:4 respectively. The mechanism responsible for the change in orientation of etch pits have been explained. The implications are discussed.     

Dislocation Etch Studies on Diammonium Hydrogen Citrate Single Crystals

Diammonium Hydrogen Citrate single crystals have been grown from aqueous solution. The etch technique for defect studies is applied to these crystals. Propionic acid is shown to be a reliable etchant capable of bringing out dislocations intersecting the (001) face. Various other interesting features observed during etching are also presented and discussed.     

激光晶体位错蚀坑的SEM研究

利用扫描电镜(SEM)及能谱(EDS)技术研究激光晶体缺陷,给出了经腐蚀过后Nd: YAG晶体表面位错蚀坑的清晰图片和元素分布定量信息,同时进行了对比实验,并对实验结果进行了分析.结果表明:Nd: YAG晶体位错腐蚀坑呈三角锥状,腐蚀坑杂质元素分布较多,主要元素含量偏离晶体完整区成份;位错腐蚀坑稀疏区与密堆区元素分布及含量不同.并讨论了位错成因.     

位错对BBO晶体光学均匀性的影响

本文报道了BBO晶体中位错密度对光学均匀性的影响.样品的光学均匀性是利用Wyko RTI 4100型干涉仪进行测量.采用侵蚀法观测BBO晶体{001}面的位错密度,在一定的侵蚀条件下,观察到BBO晶体{001}面上的位错露头为突起的正三方锥形,底边与X轴平行.在显微镜下测量出样品的蚀坑密度.实验证明,随着位错密度的增加BBO晶体的光学均匀性逐渐变差.     

Etch Pit Density Distributions in Undoped and Doped GaAs Single Crystals

The undoped and doped (Si, N, In) GaAs single crystals are grown by horizontal Bridgman technique. The etch pit density (EPD) profiles were measured in transverse direction for each crystal. It was found that the shape of EPD profiles differs in dependence on the used dopant.     

Dissolution Kinetics and Etch Pit Morphology of CaF2 Single Crystals

The effect of temperature and concentration of HCl aqeous solutions on the etching behaviour on the face {111} of CaF₂ single crystals is investigated. It has been observed that the shape and the evolution of etch pits and the values of dissolution rate depend on the etching conditions. From the plots of logarithm of dissolution rate versus inverse of absolute temperature the values of activation energy and the pre-exponential factor for the dissolution process are computed. It has been found that the value of the activation energy and of the pre-exponential factor do not remain constant with acid concentration, but exhibit a minimum for the concentration of 6 N.     

硅酸钇晶体的生长、腐蚀形貌和光谱性能研究

本文采用中频感应提拉法成功生长了未掺杂的Y2SiO5(YSO)晶体,经过定向、切割、抛光后得到样品.经过腐蚀后,利用大视场显微镜和扫描电镜在样品表面上观察到了菱形和四边形的位错蚀坑、小角晶界和包裹物等缺陷;测试了经过氢气、空气退火前后,辐照前后YSO晶体的透过谱,结果表明:YSO晶体的吸收边大约在202nm,氢气退火后在200～300nm波段透过率增加,空气退火后透过率显著降低;辐照后,氢气退火的样品在200～500nm波段透过率显著降低.     

Ferroelectric Liquid Crystals with New Chiral Building Blocks

Esterification of 4-nitrocinnamoyl chloride by new chiral alcohols((d) and (1) 2-butanol; (d) 2-heptanol), followed by reduction of the nitro group by a new reagent(SnC1₂), gives new chiral 4-aminocinnamates.Condensation of these amines with 4-alkyloxybenzaldehydes or terephthaldehyde gives Schiff bases showing in some cases chiral smectic C phases. A comparative study of the mesomorphism of both these compounds and the compounds of the DOBAMBC family is made, in order to evaluate the effect of the chiral building block structure on the liquid crystalline properties.During this study, a new compound has been prepared, which exhibits the smectic O phase: ((d) 1-methylhexyl)terephthalidene Bis 4-aminocinna-mate.     

基于ISIGHT的二维手性声子晶体带隙最优设计

本文首先利用有限元仿真软件COMSOL计算了二维手性声子晶体的带隙,分析了散射体参数与韧带涂层参数变化对带隙的影响规律。在此基础上,确定手性声子晶体带隙最优设计的有效参数设计空间;然后基于ISIGHT优化设计平台嵌入遗传算法,开展二维手性声子晶体带隙的最优设计。在带隙的最优设计过程中,先以二维手性声子晶体的有效构型参数为设计变量,相对带隙宽度最大为目标,设计手性声子晶体单胞构型。再以此优化单胞构型为初始构型,以手性声子晶体的有效材料参数为设计变量,相对带隙宽度最大为目标,进一步实现二维手性声子晶体带隙的最优设计。本工作极大限度地挖掘了二维手性声子晶体带隙最优设计潜能,为充分发挥手性声子晶体在减振降噪中的作用提供了可靠有效的分析设计方法。     

Effect of Impurities on the Etching of Sodium Chloride Crystals

The results of a study of the effect of HgCl₂, ZnCl₂, PbCl₂ and CaCl₂ on the surface micro-morphology and kinetics of etching of {100} planes of NaCl crystals in methanol and ethanol are described and discussed. It was found that addition of an impurity to the solvent leads to the formation of contrasting dislocation etch pits, and that the overall dissolution rate in a solvent decreases with an increase in additive concentration. In the case of HgCl₂ impurity added to methanol terraced etch pits are observed, but their terracing behaviour diminishes with the increasing impurity concentration.     

Devil' Staircase and Frustoelectricity in Chiral Smectic-C like Liquid Crystals

Abstract

In 1989, Chandani et al. showed that the tristable switching, already observed by themselves and by others in 4-(1-methylheptyloxycarbonyl) phenyl 4′-octyloxybiphenyl-4-carboxylate (MHPOBC).     

Landau Free Energy Expansion for Chiral Ferroelectric Smectic Liquid Crystals

The biquadratic coupling between the tilt and polarization is added to the usual bilinear coupling in the Landau free energy density expansion describing the SmA - SmC* transition. The effect on the temperature dependence of the tilt, spontaneous polarization and the pitch of the helix is studied. The results agree qualitatively with measured data.     

Quench Hardness Anisotropy of Rhombohedral Crystals. Sodium Nitrate

The effects of quenching temperature and orientation of Knoop indenter on microhardness of cleavage planes of synthetic sodium nitrate crystals are studied for the range of applied loads (20–160 g) in the high load region. Phenomenological approach was followed to obtain an empirical relation connecting Knoop hardness number, orientation, and quenching temperature. Anisotropic indices are also determined. The implications are discussed.     

Rotational Striations and Diffusion in Barium Sodium Niobate Crystals

The possibility of inducing rotational growth striae with a small period in barium sodium niobate crystals (BSN) is examined. Crystals grown had a period stability up to 1 percent and were suitable material for anisotropic light diffraction by ferroelectric domains. However intense striae were produced only for periods λ > 5 m̈m. With the help of Bragg optical diffraction by growth striae the diffusion coefficient D in solid phase responsible for striae smoothing during annealing was measured. The magnitude D ≈ 10^-11 cm² s^-1 at the melting point was obtained. Such D value leads to the vanishing of striae with λ < 5 m̈m in BSN crystals during growth.     

Studies on Surface Structures and Etch Patterns on Habit Faces of Gel-grown Crystals of Iodates of Barium,Strontium, and Calcium

Microtopographical studies on habit faces of gel grown crystals (of different habits) of iodates of Ba, Sr, and Ca are illustrated and described. Etch patterns on these faces are illustrated and correlated to the observed growth patterns on the respective faces. Growth mechanism of the crystals is explained in light of the observed surface structures and etch pits suitably produced.     

In-Plane Switching of Chiral Nematic Liquid Crystals with Different Dielectric Anisotropies

The electro-optic response in planar-aligned chiral nematic liquid crystals in an electric field oriented perpendicular to the helical structure axis is studied as a function of the magnitude and sign of the dielectric anisotropy of liquid crystal in order to understand the mechanism of this electro-optic effect. The main contribution to the electro-optic response is shown to be due to the interaction of the electric field with the dielectric anisotropy. The flexoelectric effect also contributes to the electro-optic response, but its magnitude is much smaller.     

Etch pits on Te basal planes

Prism face dislocation densities of Czochralski-grown Te single crystals were determined and a new etchant for the basal planes tested, these being prepared by spark-erosive cutting.