Zur Gleichgewichts- und Wachstumsform von β-Kupferphthalocyanin-Einkristallen

The equilibrium shape of β-copper-phthalocyanine single crystals is obtained by the method of the PBC-vectors according to HARTMAN and PERDOK . These results agree well with the experimentally found growth shape of single crystals grown in the vapour phase. The crystals are of needle-like shape. The crystal surfaces are lattice planes of the kind {001}, {201 }, {100}, {101 } and {110}. The ratio of length to width of the crystals is influenced by the inert gas pressure during the growth process. This dependence is caused by the diffusion of the nutrient.     

Dislocation etching in V3Si

Dislocations in as-grown and in plastically deformed V₃Si single crystals have been studied by chemical etching. In as-grown crystals dislocations are partly arranged in small-angle boundaries parallel to {001}, {011}, and {112} planes. The total dislocation density amounted to (10⁵−10⁶) cm⁻². After plastic deformation at elevated temperatures indications for slip and climb processes were observed. The dislocation density increased to 10⁷ cm⁻².     

High-Temperature Crystallization,Composition, Structure,and Certain Properties of Rare-Earth Gallium Borates

Solution-melts based on PbF₂—B₂O₃ and Bi₂O₃—B₂O₃ were used in studying the stability regions and for growth, by way of spontaneous crystallization, of crystals up to 3 mm in size of twelve compounds having the general formula RGa₃(BO₃)₄. All of these compounds are isostructural with carbonate mineral huntite. Their composition is highly dependent on that of the crystallization medium. The facing of the crystals is characterized by a small number of simple forms {101 1}, {112 0}, {21 1 0}, and less frequently {022 1}, {0112}, {404 1}. The examined parameters include the IR spectra, luminescence spectra, heat of formation from oxides, harness (6 to 8 units on the Mohs scale) and others.     

Effect of flux composition on the morphology of KTiOPO<Subscript>4</Subscript> crystals

KTiOPO₄ crystals have been grown from flux of K₆P₄O₁₃ in the presence of K₂SO₄, Li₂SO₄, and Na₂SO₄ salts and V, Cr, Ni, Co, Cu, Mo, Ba, Ce, Er, and W impurities. The crystals grown are characterized by well-developed simple {100}, {011}, and {201} faces. In some cases, new ({111} and (031)) faces arise. Some distortion of crystals caused by their pulling in the [101] direction is observed.     

水热法合成Zn1-xMnxO稀磁半导体

本文采用水热法在430℃,以3mol%.L-1KOH作矿化剂,填充度为35%,反应时间24h,合成了Zn1-xMnxO稀磁半导体晶体。所合成晶体具有ZnO纤锌矿结构,晶面显露正极面{0001}、负极面{0001}、菱面{1011}及负菱面{1011}晶体高度为5~30μm,径高比约为2:1。X荧光能谱(EDS)显示Mn原子百分浓度为2.6%(x=0.026)。晶体呈现低温铁磁性,居里温度50K。     

Mn、Cu共掺ZnO磁性的研究

本文采用水热法,分别以ZnO、Zn(OH)2为前驱物,添加一定量的MnCl4.4H2O和CuSO4.2H2O, 3mol/LKOH作矿化剂,温度430℃,填充度35%,反应24h,制备了Mn、Cu共掺ZnO晶体。当前驱物为Zn(OH)2时,所得晶体大部分为短柱状晶体,显露正负极面{0001}、{0001-}、负锥面-p{101-1-}和柱面m{1-010},长度约为30 ～50μm。少部分晶体为单锥六棱柱状,显露正锥面p{101-1},柱面m{1-010},负极面-c{0001-},晶体的长度约为100μm,长径比为5:1。当ZnO用作前驱物时,短柱状晶体长度大约为10 ～30μm,晶体的六棱对称性都出现较大的偏差。X射线荧光能谱分析表明,前驱物为ZnO、Zn(OH)2时,Mn离子含量在分别为3.19%和1.62%原子分数,没有检测到Cu离子。虽然Mn、Cu离子的掺入会明显影响晶体形态,磁性测量显示掺杂Mn、Cu的ZnO仍为反铁磁。     

水热法合成Mnx Zn1-xO微晶体

本文采用水热法合成了MnxZn1-xO晶体,水热反应条件为3mol·L-1KOH作为矿化剂,填充度为35;,温度为430℃,在Zn(OH)2中添加一定量的MnO2为前驱物,反应时间为24h.通过X射线能谱仪测量了晶体中的Mn含量,随着前驱物中MnO2含量的增加,晶体中Mn的原子百分比随着增加,Mn最大原子百分比含量超过了2;,晶体的形貌具有纯ZnO晶体的六角柱形特征.显露柱面m{1010}、锥面p{1011}、负极面O面{0001}和正极面{0001}.晶体直径为50～200μm,高度为20～100μm.     

氧化锌单晶的水热生长与结晶习性

本文应用水热生长法,采用双温区高压反应釜,黄金内衬(φ35mm ×2mm),碱性溶液矿化剂,生长出了毫米级的透明氧化锌单晶,最大单晶可达2mm ×3mm ×6mm.所生长氧化锌晶体为纤锌矿型的六方晶体,晶体呈上部锥形的六棱柱体,{10(1-)1}、{10(1-)0}和{000(1-)}面有较大的显露平面.本文中从温差和填充度方面研究了实验条件对ZnO晶体的生长及其形貌的影响,使用黄金内衬前后的结果表明,用贵金属内衬可以有效阻止釜内壁杂质的进入,使晶体完整透明.     

Morphology of gallium orthophosphate crystals grown under hydrothermal conditions

Gallium orthophosphate crystals with sizes of 5 mm and more have been obtained by spontaneous nucleation from hydrothermal 5.6 – 15 M orthophosphoric acid solutions. Preferable concentrations of solvent were found in the range of 11 – 12 M, the temperature difference should not be over 6–10°C at the heating rate of 4 – 5 °C/day. Morphological investigations are carried out using optical and polarizing microscopies. GaPO₄ crystals, like quartz and berlinite, tends to grow with well developed {1 1}, {0 1}, {1 0}, {1 2}, and {0 2} faces, and they were divided into three habit types. Effect of orthophosphoric acid concentration on the crystal habit has been studied.     

Geometric modeling of homoepitaxial CVD diamond growth: I. The {1 0 0}{1 1 1}{1 1 0}{1 1 3} system

Plasma-assisted CVD homoepitaxial diamond growth is a process that must satisfy many stringent requirements to meet industrial applications, particularly in high-power electronics. Purity control and crystalline quality of the obtained samples are of paramount importance and their optimization is a subject of active research. In the process of such studies, we have obtained high purity CVD diamond monocrystals with unusual morphologies, namely with apparent {1 1 3} stable faces. This phenomenon has led us to examine the process of CVD diamond growth and build up a 3D geometrical model, presented here, describing the film growth as a function of time. The model has been able to successfully describe the morphology of our obtained crystals and can be used as a predictive tool to predetermine the shape and size of a diamond crystal grown in a given process configuration. This renders accessible control of desirable properties such as largest usable diamond surface area and/or film thickness, before the cutting and polishing manufacture steps take place. The two latter steps are more sensitive to the geometry of the growth sectors, which will be addressed in a companion paper.Our model, applicable to the growth of any cubic lattice material, establishes a complete mapping of the final morphology state of growing diamond, as a function of the growth rates of the crystalline planes considered, namely {1 0 0}, {1 1 1}, {1 1 0}, and {1 1 3} planes, all of which have been observed experimentally in diamond films. The model makes no claim as to the stability of the obtained faces, such as the occurrence of non-epitaxial crystallites or twinning. It is also possible to deduce transient behavior of the crystal morphology as growth time is increased. The model conclusions are presented in the form of a series of diagrams, which trace the existence (and dominance) boundaries of each face type, in presence of the others, and where each boundary crossing represent a topology change in terms of number of faces, edges and vertices. We validate the model by matching it against crystals published in the literature and illustrate its predictive value by suggesting ways to increase usable surface area of the diamond film.     

Structural Conditionality of the Ionic Conductivity of MTiORO<Subscript>4</Subscript> (M = K,Rb; R = P,As) Single Crystals

The ionic conductivity σ_||c along the crystallographic axis c and the structural imperfection of the lattices of KTiOPO₄, RbTiOPO₄, and RbTiOAsO₄ single crystals with low defect concentration, grown by the high temperature solution growth technique, have been investigated by impedance spectroscopy and X-ray diffraction analysis. Isomorphic substitutions of Rb⁺ ions for conduction K⁺ cations in MTiOPO₄ crystals decreases the σ_||c value, whereas the substitution of As⁵⁺ ions for framework P⁵⁺ cations in RbTiORO₄ crystals increases the σ_||c value. The σ_||c values at 573 K are found to be 1.0 × 10^–5, 5.7 × 10^–6, 2.0 × 10^–6, and 3.3 × 10^–5 S/cm for the KTiOPO₄, RbTiOPO₄ {100}, RbTiOPO₄ {201}, and RbTiOAsO₄ crystals, respectively (the growth zone of the crystalline boule from which the samples were cut is indicated in braces).     

Growth and real structure of diamond films synthesized on polycrystalline tungsten substrates

X-ray diffraction studies of diamond films obtained by chemical transport reactions at the concentrations of 2% methane and 98% hydrogen under pressures of 10.7 and 21.3 kPa showed that they are textured. The character of the texture depends on the substrate temperature. The films have {110}, {311}, or double {110} + {311} textures. It is established that the dependence of the growth rate of diamond films on the substrate temperature has maxima. The diamond films are finely dispersed and are characterized by pronounced micro-deformations and high dislocation densities. The temperature dependence of the growth rate correlates with the parameters of the real structure of the films.     

Epitaxial relationships during the formation of three-dimensional snow dendrites

Investigations of natural polycrystalline snow crystals, especially of plane assemblage of crystals of spatial type, have disclosed a predominant misorientation of 70° in the c-axes between the main branch and the secondary branch. As the result of application of the Coincidence Site Lattice (CSL) theory to the interpretation of this misorientation, {30$\text{3}$2}/{0001}, {30$\text{3}$4}/{30$\text{3}$4} and {30$\text{3}$8}/{30$\text{3}$8} are proposed as probable boundaries having a good atomic fit and low energies. It follows from this proposition that, once an m-c-c-m type of stacking fault is induced, CSL boundaries will extend beyond the junction, giving the 70° misorientation between a deposit and a substrate.     

Growth‐Sector Boundaries and Growth‐Rate Dispersion in Potassium Alum Crystals

Crystals of potassium alum, pure and slightly doped with Cr³⁺, were grown from aqueous solution by slow temperature lowering. In addition, short re‐dissolution periods were introduced in order to provoke growth defects and changes of growth rates. Crystal slices of about 1 mm thickness were studied by conventional LANG X‐ray diffraction topography using MoKα radiation. For Cr‐doped crystals, boundaries between {100}, {100} and {111} growth sectors appear by pronounced dynamical X‐ray topographic contrast similar to that of stacking faults. Re‐dissolution experiments provoke the formation of inclusions on {100} faces, followed by an increase of the {100} growth rate by the factor of about six, relative to the neighboured {111} faces. X‐ray topographs show that this increase is correlated with the formation of dislocations, which interestingly have pure‐edge character. During further growth these dislocations penetrate the {100}‐{111} growth sector boundary and vanish from the {100} face, which slows down and finally adopts its former growth rate before re‐dissolution.     

Surface structures of fluorite crystals

Optical studies have been made of the microstructures on the natural {100} and {111} faces of natural fluorite crystals. The protrudance of triangular elevations, growth pyramids, and natural etch pits have been observed on a large number of crystals. It is suggested that fluorite crystals grown by two-dimensional spreading and piling of growth layers parallel to {100} faces. The natural etch pits on {100} and {111} faces suggest that they have been produced as a result of a dissolution process in nature. The natural faces have been etched in the laboratory and it is established that the pits indicate the existence of linear defects in the crystals. The implications are discussed.     

Stacking faults in deformed zinc and magnesium single crystals

Using the transmission electron microscopy dissociated dislocations containing stacking faults were observed in Mg single crystals, deformed in (0001) <1120> slip system, and in Zn single crystals deformed in {1122} <1123> slip system. The overlapping flat stacking faults lying in {1102} planes and dissociated triple nodes in (0001) planes are observed in Mg. In Zn flat stacking faults are found in {112 2} planes. The value of stacking fault energy γ has been determined in Mg crystals (γ ⋍ 10 erg/cm²). Such a low value of γ is attributed to the segregation of impurities on dislocations.     

ZnO晶体的功能梯度分析

分析n-ZnO薄膜和硼掺杂p型金刚石薄膜在{111}面金刚石衬底上制作n-ZnO/p-金刚石p-n异质结的应用,ZnO体晶微观结构和缺陷分布及电阻、载流子浓度、迁移率分布特征,探讨了应用功能梯度材料理论研究ZnO晶体材料的方法.从而提出应系统地建立ZnO晶体内部组成和结构的梯度分布特性数据库,从不同的应用角度来进行ZnO晶体材料设计和研究.     

Microstructures of gel-grown ammonium hydrogen tartrate single crystals

Single crystals of ammonium hydrogen tartrate (AHT) have been grown in silica gels by employing the controlled reaction between ammonium chloride and tartaric acid. Transparent AHT crystals upto 24 × 4 × 3 mm³ in size have been grown at room temperature. Optical and electron-optical studies have been made on the various surface structures of {010} faces of the grown crystals. A variety of growth striations and growth hillocks have been observed. Growth layers modified by the presence of misaligned microcrystals have been illustrated. It has been suggested that two-dimensional nucleation, spreading and pilling up of growth layers is mainly responsible for the growth of these crystals and the implications are discussed.     

On the question of symmetry classification of ordered tetrahedrally coordinated structures

Substructures of tetrahedrally coordinated polytopes (4D polyhedra) are determined as “polytopes” {136} and {408}, which are divided into nonintersecting 17-vertex aggregations of four centered tetrahedra. It is shown that 17-vertex polyhedra of the diamond structure and polytopes 〈136〉, {240}, 〈408〉, and {5, 3, 3} differ only by the angle of synchronous rotation of external vertex triads, and the cell of each structure is determined by the two nearest nonintersecting 17-vertex polyhedra. The following sequence is proposed as a basis for symmetry classification of ordered tetrahedrally coordinated structures: diamond structure 〈136〉 {240} → 〈408〉 → {5, 3, 3}. The possibilities of the developed approach are demonstrated by the example of constructing a rod with the screw axis 8₂ from cells of the polytope 〈136〉; this rod can be transformed into a diamond substructure: a helicoid of diamond parallelohedra with the screw axis 4₁.     

On the morphological instability of the growing crystals (IV). The effect of supersaturation inhomogeneity upon the morphological stability of KDP single crystals

The diffusion-induced inhomogeneity in the supersaturation on close packed faces of KDP crystals, growing from aqueous solutions has been investigated. The interferometrically found values of the concentration difference on the crystal edge and in the centre of the most closely packed face {100} were compared with the theoretically expected concentration nonhomogeneities calculated by means of CHERNOV 's formula. The comparison has been performed especially for the moment when the KDP crystals lose the stability of their polyhedral shape and gradually acquire a skeletal form. A fairly good coincidence was found.