Comparison of Ba(B1-xAlx)2O4 Single Crystals on their Diameters

Small diameter crystals of Ba(B_1-xAl_x)₂O₄ were grown by Floating zone pulling down method and Micro-pulling down method to be compared with large diameter crystals grown by Czochralski method. While the Czochralski grown crystal was opaque, the crystal transparency was actually improved with the decrease of crystal diameter, i.e., the decrease of constitutional supercooling. The reason was the increase of temperature gradient caused by down-sizing of the crystal diameter deduced by down-sizing of the growth furnace. The adequate diameter for transparent crystal was determined depending on the Al content.     

Growth of Li2CO3 Single Crystals by Zone Melting Technique

Li₂CO₃ single crystals have been grown by zone melting technique in carbondioxide atmosphere. The diameter of the grown crystal depends on the growth rate. The quality of the crystal depends on the growth rate, temperature of the molten zone, choice of the seed and the temperature of the auxiliary furnace. The crystal shows cleavage plane. The etch studies on cleavage planes show that the etch pits are always triangular in character.     

Synthesis,growth, morphology of the semiorganic nonlinear optical crystal L‐glutamic acid hydrochloride and its structural,thermal and SHG characterizations

One of the halide derivatives of L ‐glutamic acid which was identified as a semiorganic nonlinear optical material, L ‐glutamic acid hydrochloride [HOOC(CH₂)₂CH(NH₂)COOH.HCl], was grown as bulk single crystal and its significant properties were characterized. The stoichiometric title compound was synthesized and the solubility of its recrystallized form in DD water was determined in the temperature range 30–80 °C by gravimetric method. Structural confirmation was carried out by powder X ‐ray diffraction study through lattice parameter verification. Optical quality smaller dimension single crystals were grown from aqueous solution by self nucleation through slow evaporation of solvent method and a large dimension single crystal was grown by slow cooling method with reversible seed rotation technique. Morphological importances of different growth facets of the as grown crystals were studied through optical goniometry. Unit cell structure of the grown crystal was refined by single crystal X ‐ray diffraction analysis, functional groups present in the crystal responsible for various modes of vibrations were confirmed by FTIR spectroscopy analysis, thermal stability of the grown crytal was analysed by TG/DTA and DSC and second harmonic generation (SHG) of a fundamental Nd:YAG laser beam by Kurtz technique. Results indicate that the grown crystal is in stoichiometric composition and has significant improvement in its thermal and SHG properties when compared to pure L ‐glutamic acid polymorphs.     

Al–SnSe2 Schottky Barrier

Shottky barrier diodes are fabricated on SnSe₂ crystal grown by direct vapour transport method. The barrier is produced by thermal evaporation of aluminium on as grown single crystal of SnSe₂. The barrier height of Schottky diodes are estimated using current-voltage characteristics, and activation energy measurement. The barrier height is estimated about 0.49 eV. The implications are discussed.     

High‐quality LaCoO3 single crystal grown by optical floating zone method and its electromagnetic properties

A LaCoO₃ single crystal with 4 mm in diameter and 30 mm in length has been grown by optical floating zone method. The as‐grown crystal is highly crystalline with the rhombohedral perovskite structure (R3c) and grows parallel to the (121) direction. The room temperature resistivity of the as‐grown crystal is 0.12 Ω·cm and the insulator‐metal transition occurs around 500 K. The coercivity and the remanence of the as‐grown crystal are 5 Oe and 6.61×10^–5 μ_B/f.u. at 5 K, respectively. In 1000 Oe under zero‐field cooling, the magnetic susceptibility of the as‐grown crystal shows an upturn in a Curie tail fashion below 35 K, and appears a wave crest over the interval 55 K≤T≤90 K. In addition, a slope change of 1/χ(T) at about 12 K is observed in 50000 Oe under zero‐field cooling. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of ferroelectric‐ferroelastic Tb2(MoO4)3 crystals

Transparent and nearly colorless ferroelectric‐ferroelastic β′‐Tb₂(MoO₄)₃ (TMO) single crystals have been grown by the Czochralski (CZ) method. The single crystal structure was investigated by X‐ray powder diffraction and was shown to be a single phase with the structure similar as the β′‐Gd₂(MoO₄)₃ crystal. The optical transparency of the TMO crystal has been measured and the crystal is almost transparent in the visible and near infrared regions. The defects of TMO crystal were evaluated by etching technique and the ferroelectric domain structures were observed by an optical microscope. A high‐resolution X‐ray diffraction analysis demonstrates that the as‐grown TMO crystal possesses relatively high optical quality. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of a PbI2 single crystal used for gamma ray detectors

Lead iodide (PbI₂) is an important material for room temperature radiation detectors. In this paper, we have grown PbI₂ single crystal through a special craft, from which γ‐ray detector has also been fabricated. X‐ray diffraction analysis indicates structure of the grown crystal is 2H with hexagonal space group P3m1. Infrared transmission measurement shows transmission rate of the grown crystal sample (10×10×1mm³) reaches 40% averagely in range of 400∼4000cm^‐1. Ultraviolet absorbing test indicates cut‐off wavelength of the sample is 547.6nm, corresponding band gap of 2.27eV. Room temperature detector fabricated from the grown crystal is sensitive to ²⁴¹Am 59.5KeV γ‐ray. Full width at half maximum (FWHM) of the obtained energy spectrum is 26.7KeV. All the results indicate the PbI₂ crystal grown through the special craft is of good characteristics and can be used for γ‐ray detector. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of the nonlinear optical crystal: L‐arginine trifluoroacetate

Single crystal growth of the organic nonlinear optical crystal, L‐arginine trifluoroacetate (L‐Arg·CF₃COOH, abbreviated as LATF) is reported. Low temperature solution growth method is employed for the growth of bulk single crystals. The cell parameters are verified by single crystal diffraction. Fourier transform infrared (FT‐IR) and Fourier transform Raman analysis are used to confirm the presence of various functional groups in the grown crystal. The thermal properties of the grown crystals are studied by thermogravimetric analysis and differential scanning calorinetry analysis (TGA/DSC). Second harmonic generation (SHG) measurement confirms the NLO properties of the grown crystal. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and Characterization of Na2CaGe6O14 Single Crystals

Transparent, crack-free Na₂CaGe₆O₁₄ (NCG) single crystals were successfully grown using the Czcchralski technique. The largest crystal had 30 mm in total length and 18 mm in maximal diameter. Best crystal quality was achieved under low temperature gradient arrangement. The crystal structure of NCG has been refined from single crystal X-ray diffraction data. Some piezoelectric properties of NCG are reported.     

Solution growth of new ferroelectric glycine phosphite unidirectional single crystals at room temperature

Glycine phosphite [NH₃CH₂COOH₃PO₃], abbreviated as GPI is the second hydrogen bonded ferroelectric crystal combination of phosphorous acid and amino acid following βnine phosphite crystals abbreviated as BPI. Sankaranarayanan and Ramasamy‐Technique was adopted to prepare the ferroelectric glycine phosphite unidirectional single crystal. The growth orientation was imposed by the pre‐grown 〈010〉 seed. As water was the solvent, transparent, colourless crystal with cylindrical shaped ingot of sized 20mm‐diameter was grown. Powder X‐ray diffraction, HRXRD, FTIR, dielectric and mechanical studies were carried out. The results are discussed in detail. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

KTP crystal growth from the starting materials reacted in solution

Using the solution‐reacted materials, potassium titanyl phosphate (KTiOPO₄, KTP) crystal was grown by the top‐seeded solution growth (TSSG) method. The solution‐reacted precursor was characterized by scanning electron microscope, and the solubility of KTP in K₈P₆O₁₉ was measured. The crystals were investigated by synchrotron radiation X‐ray topography, scattering centers measurement, weak absorption test and damage threshold test. The results showed that dispersion was better and solubility was higher than those by solid‐reacted method. Compared with the conventional crystal, KTP crystal grown from the solution‐reacted precursor had fewer defects, fewer scattering centers, lower weak absorption and higher damage threshold.     

Epitaxial growth of ferroelectric PLZT [(Pb,La)(Zr,Ti)O3] thin films

Thin films of PLZT were epitaxially grown at around 700°C on sapphire and SrTiO₃ substrates: (111) PLZT  (0001) sapphire and (100) PLZT  (100) SrTiO₃. PLZT films on semiconductor substrates were also grown at around 620°C. The crystal quality of these PLZT films was investigated by X-ray diffraction, reflection electron diffraction, scanning electron microscopy (SEM), and Auger electron spectroscopy (AES). The epitaxy of PLZT films grown on different single crystal substrates is discussed. The refractive index of the film on the sapphire substrate was determined as 2.49₇ by an optical waveguide technique.     

Investigation on growth,optical, thermal,mechanical and dielectric studies of Benzimidazolium L-aspartate NLO crystal

The organic salt of Benzimidazolium L-aspartate (BLA) has been synthesised and single crystals were grown by slow evaporation solution growth technique at room temperature using water as the solvent. The grown crystal was subjected to single crystal X-ray diffraction analysis and confirmed it belongs to monoclinic crystal system with space group P2₁/c. The crystalline perfection was studied using High resolution X-ray diffraction (HRXRD). The functional groups were analysed by FT-IR analysis. The optical transmittance and the lower cut-off wavelength of the BLA crystal have been identified by UV-Vis study. The thermal stability of the title crystal was investigated by TGA/DTA analyses. The Vickers microhardness analysis was carried out to study the mechanical strength of the crystal. The dielectric response of the crystal was studied in the frequency range 100 to 5 MHz at different temperatures. The surface morphology of the grown BLA crystal was studied by scanning electron microscopy (SEM). The second harmonic generation efficiency was measured in comparison with KDP by employing Kurtz Perry Powder method.     

Structure,growth and optical properties of Zn0.24Ni0.76(SO4)·7H2O single crystal

A new crystalline complex zinc nickel sulfate heptahydrate (ZNSH) has been prepared. The crystal structure was investigated by x‐ray single crystal diffraction method and the empirical formula is Zn_0.24Ni_0.76(SO₄)·7H₂O. The ZNSH crystal belongs to the orthorhombic space group P2₁2₁2₁ with cell parameters a = 6.7742(14) Å, b = 11.748(2) Å, c = 12.009(2) Å. The deep‐green ZNSH single crystal with dimension of 30 × 25 × 25 mm³ has been grown by the cooling solution method. The constituent ratio of ZNSH crystal grown from various compounding solutions at temperature range 40‐50 °C is approximate invariant. The crystal absorption spectra with theoretical analysis are reported. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of magneto‐optical YFeO3 crystals

The floating zone growth of magneto‐optical crystal YFeO₃ has been investigated. The polycrystalline feed rod was prepared by a pressure of 250MPa and sintering at about 1500°C. A crack‐ free YFeO₃ single crystal has been successfully grown. The crystal preferred to crystallize along <100> direction with about 10° deviation. The X‐ray rocking curve of the crystal has a FWHM of 24 arcsec, confirming the high crystal quality of the sample. The (100) plane was etched by hot phosphoric acid and the dislocation density was about 10⁴/cm². A thin outer layer with Y₂O₃‐rich composition was found at the periphery of as‐grown crystals, which was attributed to the Fe₂O₃ evaporation during growth. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

TEM and X-ray investigations of defect structure of PbSnTe crystal

The Pb_0.8Sn_0.2Te single crystal grown by the Bridgman technique was examined by X-ray and TEM methods. The X-ray reflection topography revealed that the PbSnTe crystal consisted of monocrystallinic blocks with linear dimensions of 1–5 mm separated by low angle boundaries of tilt-twist character. “As grown” defects observed by TEM method have been identified as single perfect dislocations and dislocation pairs. A mean density of dislocations inside the crystal blocks was no more than 10³ cm⁻². Except “as grown” defects rows of mobile dislocations were observed. All of dislocations lines were characterized by the same type of Burgers vector, i.e. b = 1/2a〈110〉.     

Growth,etching morphology and spectra of LiAlO2 crystal

γ‐LiAlO₂ single crystal was successfully grown by Czochralski method. The crystal quality was characterized by X‐ray rocking curve and chemical etching. The effects of air‐annealing and vapor transport equilibration (VTE) on the crystal quality, etch pits and absorption spectra of LiAlO₂ were also investigated in detail. The results show that the as‐grown crystal has very high quality with the full width at half maximum (FWHM) of 17.7‐22.6 arcsec. Dislocation density in the middle part of the crystal is as low as about 3.0×10³ cm^–2. The VTE‐treated slice has larger FWHM value, etch pits density and absorption coefficient as compared with those of untreated and air‐annealed slices, which indicates that the crystal quality became inferior after VTE treatment. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and optical properties of self-frequency-doubling laser crystal Yb:LuAl3(BO3)4

Single crystal of Yb:LuAl₃(BO₃)₄(Yb:LuAB) was grown by the flux method for the first time. The cell parameters of the grown crystal were estimated by X-ray diffraction analysis. The result indicates the symmetry of trigonal space group R32, with lattice parameters a=b=9.26372 Å, c=7.21405 Å, V=536.14 Å³, and Z=4. The absorption and emission spectra of Yb:LuAB crystal at room temperature has also been studied. The fluorescence lifetime for Yb:LuAB crystal is about 1.48 ms. The heat capacity was measured from 25 to 500 °C. Its second harmonic generation efficiency in LuAl₃(BO₃)₄ crystal is 3–4 times that of KDP crystal. These results show that Yb:LuAB crystal would be a potential self-frequency-doubling laser crystal.     

Growth and characterization of La3Ga5.5Ta0.5O14 crystal

La₃Ga_5.5Ta_0.5O₁₄ (LGT) crystal was grown by using the Czochralski method. The as‐grown crystal is transparent, free from inclusions and with no cracks. Specific heat, thermal expansion, dielectric constants, transmission spectrum and optical damage threshold of LGT have been measured, and the results show general properties of LGT are similar to that of La₃Ga₅SiO₁₄ (LGS) crystal. The experiment to research the Q‐switch properties of LGT has been performed and the results show LGT possesses smaller electrooptic coefficients than that of LGS and may not be an ideal material used as a Q‐switch. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Zur Lumineszenz von Zinksiliziumphosphid

Results of cathodoluminescene measurements of ZnSiP₂-single crystals grown by different techniques are reported. The luminescence excited in the various samples showed considerable differences in intensity and spectral position. These differences are apparently caused by the irregular incorporation of recombination centres in the present stage of crystal growth. Samples grown by “vapour phase technique with ZnCl₂” and by “spontaneous crystallisation from Sn or zn melt” showed line spectra typical for the special method of crystal growing. This relation between a typical line spectrum and the method of crystal growing chosen is attributed to the participation of intrinsic defects in the recombination processes. The detection of doping elements by means of luminescence measurements is discussed for ZnSiP₂ crystals doped by adding Te, Se, Ga. or In to the Zn melt.