PbS纳米颗粒复合的溶胶凝胶薄膜的飞秒非线性光学特性

通过光Kerr效应研究了PbS半导体纳米颗粒的三阶光学非线性响应。在较低的激发强度下,单激子态的饱和吸收和双激子效应的激发态吸收对非线性的贡献同时存在;而在高激发强度下,双激子效应是主要的。计算了高激发强度下(4mJ/cm²)PbS半导体纳米颗粒的三阶非线性光学极化率为5.1×10^-10esu。     

InP纳米颗粒的超快动力学和光学非线性

通过飞秒泵浦-探测方法测量了波长为800 nm时InP半导体纳米颗粒激发态的瞬态动力学过程。观察到一个快速的光致漂白建立和一个漂白的恢复过程,分析饱和吸收的来源可能是带填充效应引起跃迁的饱和吸收。对于漂白恢复中的快过程是由于自由载流子的弛豫,而慢成分是由于光激发载流子在很短的时间内受陷于表面态形成的限域载流子的弛豫。通过飞秒光克尔效应(OKE)方法测量材料的超快非线性响应曲线,计算了材料的光学三阶非线性极化率,分析了非线性的来源。     

CdSe/ZnS核-壳结构量子点的非线性光学吸收

利用开孔Z扫描技术研究了吸收峰分别为553nm和503nm的两种尺寸CdSe/ZnS核-壳结构量子点溶液的非线性吸收性质.对于532nm,6ns激光脉冲,两种材料均表现出饱和吸收向反饱和吸收转化的现象.数值模拟结果表明:当吸收峰波长大于激光波长时,饱和吸收过程由快、慢两种机制组成,分别对应基态载流子被激发至不同的激发态,而强光下的反饱和吸收与快过程相关;当吸收峰波长小于激光波长时,饱和吸收主要由快过程机制引起,强光下的反饱和吸收源自激发态吸收和双光子吸收.我们的研究结果表明半导体量子点是研制光开关和光限制器件的理想候选材料.     

CdSe/ZnS核-壳结构量子点的非线性光学吸收

利用开孔Z扫描技术研究了吸收峰分别为553 nm和503 nm的两种尺寸CdSe/ZnS核-壳结构量子点溶液的非线性吸收性质.对于532 nm,6 ns激光脉冲,两种材料均表现出饱和吸收向反饱和吸收转化的现象.数值模拟结果表明：当吸收峰波长大于激光波长时,饱和吸收过程由快、慢两种机制组成,分别对应基态载流子被激发至不同的激发态,而强光下的反饱和吸收与快过程相关;当吸收峰波长小于激光波长时,饱和吸收主要由快过程机制引起,强光下的反饱和吸收源自激发态吸收和双光子吸收.我们的研究结果表明半导体量子点是研制光开关和光限制器件的理想候选材料.     

铜掺杂氧化锌纳米棒的非线性光学响应竞争特性

利用飞秒脉冲激光激发Cu掺杂ZnO纳米棒,研究其特有的非线性光学性质和激发机制。在激发波长为750 nm的荧光光谱中,二次谐波峰非常弱,几乎可以忽略,存在非常强的激子发光峰和Cu掺杂导致缺陷发光峰。激发强度的增大会导致这两个发光峰强度呈非线性增大,激子发光峰位产生明显红移,而缺陷发光峰位没有变化。进一步增大激发强度,缺陷发光峰强度会出现饱和甚至有所下降,而激子发光峰强度持续增大。当激发波长增加到760 nm时,从样品的荧光光谱可以清楚地识别到二次谐波峰和激子发光峰以及缺陷发光峰并存。随着激发波长的进一步增加,二次谐波强度不断增大,而激子发光峰和缺陷发光峰的强度却随之下降。当激发波长为790 nm和800 nm时,未发现激子发光峰和缺陷发光峰,非线性光谱以二次谐波为主导。研究结果表明,通过选择合适的激发波长和激发强度,可以实现发光颜色的转变,使得Cu掺杂ZnO纳米棒在全光显示方面具有潜在的发展前景。     

半导体PbS纳米微粒的三阶非线性光学特性

用Z扫描技术,以锁模Nd:YAG激光器发出的脉宽为50ps激光作光源,在530nm和1060nm波长光作用下,研究了半导体PbS纳米微粒的非线性光学特性.结果发现在530nm激光作用下,样品有饱和吸收现象,而在1060nm激光作用下,双光子吸收出现,同时还研究了PbS纳米微粒对这两种光的限幅特性 关键词：     

Au纳米颗粒阵列中双光子吸收的饱和过程

采用纳米球蚀刻法制备了Au纳米颗粒阵列.并通过扫描电子显微镜观测了其表面形貌,表明三角形的Au纳米颗粒呈阵列状分布.采用Z扫描方法(800 nm, 50 fs)测量了Au纳米颗粒阵列的三阶非线性光学特性.在较小的激发功率下,结果呈现出双光子吸收效应,随着激发功率不断增加,出现了双光子吸收饱和的过程;非线性折射则呈现出自散焦效应.这种高效率的非线性响应机理使得该种Au纳米颗粒阵列在高速全光开关中有潜在的应用价值. 关键词： 纳米球蚀刻技术 Au纳米颗粒 三阶光学非线性     

掺杂Ag纳米粒子对偶氮聚合物光致异构效应的影响

报道了通过宏观测量偶氮聚合物光致异构效应,及其引起的光学各向异性变化,讨论了一种影响偶氮聚合物顺反异构效应的有效途径。在偶氮高分子聚合物中,添加了不同浓度的Ag纳米粒子,采用了波长为442nm的He-Cd偏振激光为激发光源,当Ag纳米粒子掺杂质量浓度为0.12μg/ml的时候,激发了薄膜样品中Ag纳米粒子的等离子体共振效应,增强了粒子周围纳米尺度的电磁场强度,相当程度上提高了偶氮聚合物光致异构的转换效率;另外,研究了不同的取代基同纳米Ag粒子的相互作用对光致异构效应的影响,探讨了一种能够有效地控制光致异构效应的方法。     

GeSe_2中强各向异性偏振相关的非线性光学响应

二硒化锗(GeSe_2)作为一种层状IV-VI族半导体,具有面内各向异性结构及宽能带间隙,表现出了独特的光、电及热学性能.本文利用偏振拉曼光谱和线性吸收谱分别对GeSe_2纳米片的晶轴取向和能带特性进行表征,并以此为依据采用微区I扫描系统研究了GeSe_2在共振能带附近的光学非线性吸收机制.结果表明,GeSe_2中非线性吸收机制为饱和吸收与激发态吸收的叠加,且对入射光偏振与波长均有强烈的依赖.近共振激发(450 nm)条件下,激发态吸收对偏振的依赖程度比较大,随着入射光偏振的不同,非线性调制深度可由4.6%变化至9.9%;而非共振激发(400 nm)时,该调制深度仅由7.0%变化至9.7%.同时,相比于饱和吸收,激发态吸收的偏振依赖程度受远离共振激发波长的影响而变化更大.     

射频磁控共溅射GaAs/SiO2纳米颗粒镶嵌薄膜的光学性质

应用射频磁控共溅射方法和真空退火方法制备了GaAsSiO2纳米颗粒镶嵌薄膜.X射线衍射实验结果表明,经高温退火的薄膜中形成了面心立方闪锌矿结构的GaAs纳米晶粒,晶粒平均直径为1.5—3.2nm.吸收光谱展示了由于强量子限域引起的1.5—2eV的吸收边蓝移.室温光致荧光(PL)光谱显示了电子重空穴激子与电子劈裂空穴激子的近紫外和紫外双PL谱峰以及深俘获态的PL谱峰.对实验吸收边蓝移量与有效质量模型的蓝移量的悬殊差别、俘获态PL谱的形成以及PL谱线的特征作了解释.应用激光Z扫描技术测量了退火温度为500℃的复合膜在非共振条件下的光学非线性,结果表明,复合膜的非线性折射率系数和非线性吸收系数都比块材GaAs相应的系数增大了5个数量级.光学非线性系数增大主要起因于强量子限域效应 关键词： 射频磁控共溅射 GaAsSiO2纳米颗粒镶嵌薄膜 光谱 激光Z扫描     

Theory of multi-exciton states in semiconductor nanocrystals

In this article, the fundamental physics of multi-exciton states in semiconductor nano-crystals is reviewed focusing on the mesoscopic enhancement of the excitonic radiative decay rate and the excitonic optical nonlinearity and the mechanism of their saturation with increase of the nanocrystal size. In the case of the radiative decay rate the thermal excitation of excited exciton states having small oscillator strength within the homogeneous linewidth of the exciton ground state is essential in determining the saturation behavior. The weakly correlated exciton pair states are found to cause a cancellation effect in the third-order nonlinear optical susceptibility at the exciton resonance, providing the first consistent understanding of the experimentally observed saturation of the mesoscopic enhancement of the excitonic optical nonlinearity. The presence of the weakly correlated exciton pair states is confirmed convincingly from the good correspondence between theory and experiments on the induced absorption spectra from the exciton state in CuCl nanocrystals. Furthermore, ultrafast relaxation processes of biexcitons are discussed in conjunction with the observed very fast rise of the biexciton gain in nanocrystals. In prospect of future progress in research, the theoretical formulation to calculate the triexciton states as one of the multi-exciton states beyond the biexciton is presented for the first time including the electron-hole exchange interaction.     

Coherent Pump-Probe Response of Quantum Wells: Polarization Dependence

We consider the coherent pump–probe response from quantum wells using the exciton–boson formalism approach. We obtain the mean-field contribution and that of the biexciton as well as of a molecular scattering state in analytic form and show that each of these contributions may completely disappear in one or another polarization configuration of the pump and probe pulses, which makes the response strongly dependent on polarization. We apply the derived formulas for calculating the differential absorption spectrum of quantum-well samples under excitation conditions supporting the slow exciton–exciton scattering. The obtained results are in good qualitative agreement with available experimental observations.     

自旋极化度对GaAs量子阱中吸收饱和效应与载流子复合动力学的影响研究

本文研究了(001) GaAs量子阱薄膜中重空穴激子近共振抽运-探测的载流子自旋弛豫动力学, 发现载流子的自旋极化对传统的线偏振光吸收饱和效应和载流子复合动力学都有影响. 进一步的抽运流依赖的自旋弛豫和复合动力学研究表明, 自旋极化对线偏振光的吸收饱和效应的影响随抽运流降低而变弱. 在低激发流时, 自旋极化对线偏振吸收饱和效应的影响才可忽略. 然而, 又显现出自旋极化对复合动力学的影响. 分析表明复合动力学的自旋极化依赖性起源于重空穴激子形成浓度的自旋极化依赖性. 复合动力学的自旋极化依赖性表明自旋弛豫时间计算中所涉及的复合时间应该使用自旋极化载流子的复合时间. 基于二维质量作用定律的激子浓度计算表明, 库仑屏蔽效应对激子形成的影响在较低激发载流子浓度下可以忽略.     

Relaxation and dephasing of multiexcitons in semiconductor quantum dots

We measure the dephasing time of ground-state excitonic transitions in InGaAs quantum dots under electrical injection in the temperature range from 10 to 70 K. Electrical injection into the barrier region results in a pure dephasing of the excitonic transitions. Once the injected carriers fill the electronic ground state, the biexciton to exciton transition is probed and a correlation of the exciton and biexciton phonon scattering mechanisms is found. Additional filling of the excited states creates multiexcitons that show a fast dephasing due to population relaxation.     

Excitation spectroscopy,Raman scattering and the temperature dependence of the luminescence in highly excited red HgI2

The luminescence of red HgI₂ is investigated as a function of temperature, excitation intensity and wavelength. At high excitation intensity and low temperature an “M-band” emission dominates. This M-band is assigned to biexciton decay and bound exciton scattering with acoustic phonons (“acoustic wing”), this assumption being supported by the results of excitation spectroscopy. The energy of the biexciton is determined to be (4661 ± 1) meV. From the evaluation of Raman spectra, the phonon energies (1.9, 3.1 and 14.0 ± 0.2) meV are found. At higher temperatures two lines are observed, one of which is ascribed to exciton-free carrier scattering. Position and line shape are in good agreement with theoretical results. The other emission line is found to be due to scattering involving excitons or carriers bound to lattice defects.     

Phase diagram of electron-hole systems: Interplay between exciton Mott transition and quantum pair condensation

Quasi-thermal-equilibrium states of electron-hole (e-h) systems in photoexcited insulators are studied from a theoretical viewpoint, stressing the exciton Bose-Einstein condensation (BEC), the e-h BCS-type pair-condensed state, and the exciton Mott transition between an insulating exciton/biexciton gas phase and a metallic e-h plasma phase. We determine the quasi-equilibrium phase diagram of the e-h system at zero and finite temperatures with applying the dynamical mean-field theory (DMFT) to the e-h Hubbard model with both repulsive and attractive on-site interactions. Effects of inter-site interactions on the exciton Mott transition are also clarified with applying the extended DMFT to the extended e-h Hubbard model.     

Two-photon excitation of confined biexcitons in CuCl quantum dots

We have studied direct creation processes of confined biexcitons in CuCl quantum dots by polarization-dependent resonant two-photon excitation spectroscopy. The two-photon absorption band for the lowest state of the biexciton (total angular momentum J=0) which appears on the lower energy side of confined exciton band was identified from the analysis of the polarization dependence of the photoluminescence excitation spectrum of the biexciton. Furthermore, the two-photon excitation process for the excited state of the biexciton (J=2) was also found with polarization dependence different from the J=0 biexciton state.     

Bistable lasing of the vertical cavity surface emitting laser with a saturable absorber

The energy characteristics of a quantum-dot (QD) semiconductor laser with a saturable absorber in the regime of bistable lasing, which allow one to implement the device in a monolithic form, are calculated. The active and passive layers of the laser may include the same QDs. The phonon- and collision-related mechanisms of relaxation of carriers, which are substantial for the experiment, are considered. Formulas are derived for the saturation intensity, weak-signal gain/absorption coefficients, and their asymptotic dependence on the pump current. The restriction factor for filling by carriers, Fermions, and the possibility of fast capture of carriers by QDs are taken into account, and distinctions from the two-level model of saturation are demonstrated. It is shown that, to ensure the bistable mode for the laser with a saturable absorber, it is preferable to choose the resonance mode tuned to the excited state of the exciton, with predominant collision-related relaxation mechanism.