纳米结构氧化镍缓冲层对蓝色有机发光二极管性能的影响（英文）

在阳极和空穴传输层分别引入氧化镍纳米结构缓冲层,制备了蓝色有机发光二极管,对二极管的电学和光学特性进行了测试分析,研究了采用电化学方法制备的氧化镍纳米结构对器件的影响。结果表明,纳米结构氧化镍缓冲层能够有效地提高空穴-电子对的产生和复合效率,它的引入带来了高效的空穴注入及发光层中的载流子平衡,能有效提高有机发光二极管的电致发光特性。氧化镍缓冲层沉积时间为30 s的器件具有最高的亮度和电流效率,分别为42 460 cd/m~2和24 cd/A,该器件的CIEx,y色坐标为(0.212 9,0.325 2)。     

PrF3阳极缓冲层对OLED器件性能的影响

使用真空热蒸镀法制备的OLED器件,利用不同厚度的PrF3作阳极缓冲层,并和未加缓冲层的器件进行了对比.实验结果表明:0.5nm厚的PrF3阳极缓冲层可以有效增强OLED器件的空穴注入能力,增强电子和空穴的浓度平衡,优化器件的电致发光特性.器件的最大电流效率为4.9 cd/A,最大亮度为33 600 cd/m2,分别是...     

利用银纳米立方增强效率的多层溶液加工白光有机发光二极管

金属纳米粒子的局域表面等离子体共振效应常被用于增强有机发光二极管中激子辐射强度,其增强效果与金属纳米粒子的共振波长、共振强度及其与激子之间的耦合密切相关.本文将具有较强局域表面等离子体共振效应的银纳米立方引入多层溶液加工白光有机发光二极管中提升器件性能.在传统的溶液加工有机发光二极管中,发光层主体一般具有较强的空穴传输性,因此激子主要在发光层/电子传输层界面附近复合.本文将银纳米立方掺入电子传输层中,使银纳米立方与激子之间产生充分的耦合作用,提高激子发光强度.对银纳米立方包裹二氧化硅外壳,一方面优化纳米立方与激子之间的距离,另一方面减小其对器件中电荷传输的影响.通过优化银纳米立方的浓度,多层溶液加工白光有机发光二极管的电流效率达到30.0 cd/A,是基础器件效率的2倍.另外,由于银纳米立方的等离子体共振光谱较宽,同时增强了白光中蓝光和黄光的强度,因此引入银纳米立方基本没有影响白光的色度.研究结果表明引入金属纳米粒子是提升多层溶液加工发光二极管性能的有效方法.     

应用交互叠层空穴传输层的高效铕配合物发光二极管

制备了铕配合物有机发光二极管(OLED),为了获得Eu(DBM),bath的特征发射,在器件中引入BCP作为空穴阻挡层。通过引入交互叠层的TPD／m-MTDATA作为空穴传输层,与传统异质结器件相比,最大发光效率及最大发光亮度都有明显提高。其最大发光效率在电流密度为2．8mA/cm^2时达到3cd／A,在电流密度为170mA/cm^2时器件达到最大亮度670cd／cm^2。对BCP空穴阻挡层及TPD／m-MTDATA交互叠层改善器件性能机理亦进行了讨论。     

ZnS作为空穴缓冲层的新型有机发光二极管

采用磁控溅射方法在ITO表面沉积了不同厚度的ZnS超薄膜作为有机发光二极管(OLEDs)的缓冲层,使典型结构(ITO/TPD/Alq3/Al)的OLEDs的发光性能得到改善。ZnS缓冲层厚度对器件性能影响的实验结果表明,当ZnS缓冲层厚度为5nm时,器件电流密度提高了近2倍,亮度提高了2倍;当ZnS缓冲层厚度为10nm时,器件发光的电流效率提高18%,器件的性能得到改善。宽禁带的ZnS缓冲层对空穴从阳极到有机功能层的注入有阻碍作用,促进器件载流子平衡,提高了器件发光效率,改善了器件性能。     

阳极/有机层界面LiF层在OLED中的空穴缓冲作用

使用真空热蒸发镀膜法,在OLED层状结构中引入不同厚度的LiF作阳极修饰层,制备了结构为ITO/LiF/TPD/Alq₃/Al的器件。LiF超薄层的引入较好地修饰了ITO表面,减少了阳极和有机层界面缺陷态的形成,增强了器件的稳定性。实验结果表明: LiF层有效地阻挡空穴注入,增强载流子注入平衡,提高了器件的亮度和效率,含有1 nm厚LiF空穴缓冲层器件的性能最好,效率较不含缓冲层器件提高了近1.5倍。     

基于LiF修饰层的喷墨打印钙钛矿发光二极管EI北大核心CSCD

金属卤化物钙钛矿材料由于具有高光致发光量子产率、高色纯度、带隙可调等优良光学性能,作为发光材料广泛用于制备钙钛矿电致发光二极管(PeLEDs)。虽然已经取得了较好的研究进展,但是其大面积商业化的进程还比较缓慢,尚需进一步研究。为了实现钙钛矿薄膜发光二极管的大面积制备,本文使用喷墨打印技术,研究了不同基板结构对于钙钛矿前驱液的铺展与结晶成膜的影响及器件性能的比较,引入了具有空穴阻挡能力的无机小分子材料氟化锂(LiF)作为缓冲层沉积于空穴传输层TFB上,获得了像素化的均匀分布的钙钛矿薄膜,从而得到发光均匀的最高亮度为4861 cd/m2且最大电流效率为5.41 cd/A的印刷钙钛矿发光二极管。研究表明,LiF修饰层对于空穴的注入具有阻挡作用,并且有效阻止了钙钛矿发光层与TFB接触后所导致的激子猝灭现象。     

纳米ZnO薄膜对有机电致发光器件性能的影响

由于有机电致发光器件(Organic light-emitting devices,OLEDs)的主动发光、高亮度等优点,在显示和照明领域有极大的应用前景。报道了纳米ZnO薄膜对这种发光器件性能的影响。在普通有机电致发光器件空穴传输层和发光层之间直接蒸镀一层纳米ZnO薄膜,当纳米ZnO薄膜的厚度为1nm时,器件的电流效率可达3.26cd/A,是没有纳米ZnO薄膜同类器件的1.24倍。适当厚度的纳米ZnO薄膜降低了发光层空穴的浓度,提高了电子和空穴的平衡,从而提高了器件的效率。     

溶液法制备的金属掺杂氧化镍空穴注入层在钙钛矿发光二极管上的应用

甲脒基钙钛矿(FAPbX_3)纳米晶(NCs)具有成本低、色纯度高、吸收范围广、带隙可调等特点,在照明显示与光伏领域中表现出良好的应用前景.然而传统钙钛矿发光二极管(LEDs)的空穴注入层材料——PEDOT:PSS,由于其固有的吸湿性和酸性,严重影响着器件的稳定性,而器件的稳定性始终是阻碍钙钛矿发光器件成为实际应用的关键因素之一.本文首次使用溶液法制备的氧化镍(NiO)薄膜作为溴基甲脒钙钛矿(FAPbBr_3) NCs LEDs的空穴注入层,降低空穴注人层对钙钛矿发光层的影响,获得了高效且稳定的钙钛矿发光器件,器件寿命是基于PEDOT:PSS的器件的2.3倍.通过适当浓度的金属掺杂(Cs:NiO/Li:NiO),可以有效改善器件的电荷平衡,从而进一步提高FAPbBr_3 NCs LEDs的性能.基于掺杂2 mol%Cs的NiO的器件表现出最优异的光电性质,其最大亮度,最大电流效率,峰值EQE分别为2970 cd·m~(-2),43.0 cd·A~(-1)和11.0%;相比于传统的PEDOT:PSS基的器件,效率提高了近2倍.     

基于纳米硅结构的氮化硅基发光器件电致发光特性研究

利用等离子体增强化学气相沉积法制备了镶嵌于氮化硅的高密度纳米硅薄膜,并以此作为发光有源层构建基于p-Si/氮化硅基发光层/AZO结构发光二极管,在室温下观察到了电致可见发光.在此基础上,在器件p-Si空穴注入层与氮化硅基发光层之间加入纳米硅薄层作为空穴阻挡层,研究器件电致发光性质,实验结果表明器件的发光强度显著增强,并且发光效率较无纳米硅阻挡层的发光器件提高了80%以上.     

The formation of sharp NiO(1 0 0)-cobalt interfaces

An atomically sharp interface between an antiferromagnetic oxide and a ferromagnetic metal may be obtained by the deposition of an epitaxial oxide buffer nanolayer in between. The buffer layer consists of the oxide of the ferromagnetic metal. The concept has been demonstrated on the NiO(1 0 0)-Co system, where the inclusion of a 1-2 ML CoO(1 0 0) interlayer inhibits the interfacial redox reaction which takes place between NiO and Co metal in the absence of the buffer layer.     

高效率的有机电致发光器件

有机电致发光器件 (OL EDs)的发光机理包括电子和空穴从电极的注入、激子的形成及复合发光 ,其中 ,空穴和电子的注入平衡是非常重要的。为了平衡载流子的注入以得到高效率和稳定性好的器件 ,人们不仅使用了电子注入更为有效的 L i F/ Al[1] 和 Cs F/ Al[2 ] 等复合电极 ,同时也使用了空穴缓冲层 ,如 S.A.Van Slyke等 [3]在ITO和 NPB之间使用 Cu Pc,使得器件的稳定性得到了明显的提高 ;A.Gyoutoku等[4 ] 用碳膜使器件的半寿命超过 3 5 0 0小时 ;最近 ,Y.Kurosaka等 [5]和 Z.B.Deng[6 ]分别在 ITO和空穴传输层之间插入一薄层 Al…     

Ultrathin nickel oxide film as a hole buffer layer to enhance the optoelectronic performance of a polymer light-emitting diode

In order to promote a polymer LED (PLED), we fabricated and introduced an ultrathin nickel oxide (NiO) buffer layer (<10 nm) between the indium tin oxide (ITO) anode and the poly (3, 4-ethylenedioxythiophene) hole injection layer in the PLED. The NiO buffer layer was easily formed on the ITO anode by electron-beam deposition of a nickel (Ni) metal source and an oxygen plasma treatment process. As a result, the PLED device with the NiO buffer layer on its ITO anode had the same turn-on voltage as conventional PLED devices without the NiO buffer layer, and the luminance of the PLED device with the NiO buffer layer was doubled, compared with the conventional PLED devices without the NiO buffer layer. Improvement of the optoelectronic performance of the PLED can be attributed to the increase of the current driven into the diode, resulting from the NiO buffer layer, which can enhance the hole injection and balance the injection of the two types of carriers (holes and electrons). Thus it is an excellent choice to introduce the NiO buffer layer onto the ITO anode of the PLED devices in order to enhance the optoelectronic performance of PLED devices.     

Interface reaction of Ta/NiO and its effect on exchange coupling

Ta/NiO/NiFe/Ta multilayers, utilizing Ta as the buffer layer, were prepared by RF reactive and DC magnetron sputtering. The exchange coupling field between NiO and NiFe reached a maximum value of 120 Oe at a NiO film thickness of 50 nm. The composition and chemical state at the interface region of Ta/NiO/Ta were studied using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there is an `intermixing layer’ at the Ta/NiO (and NiO/Ta) interface due to a thermodynamically favorable reaction: 2Ta+5NiO=5Ni+Ta<sub>2</sub>O<sub>5</sub>. This interface reaction has an effect on the exchange coupling. The thickness of the `intermixing layer’ as estimated by XPS depth-profiles was about 8–10 nm.     

基于氧化镍背接触缓冲层碲化镉薄膜太阳电池的研究

采用电子束蒸发法制备了NiO薄膜,并对其作为碲化镉薄膜太阳电池背接触缓冲层材料进行了相关研究.NiO缓冲层的加入使得碲化镉太阳电池开路电压显著增大.通过X射线光电子能谱测试得到的NiO/CdTe界面能带图表明NiO和CdTe的能带匹配度很好.NiO是宽禁带P型半导体材料,在电池背接触处形成背场,减少了电子在背表面处的复合,从而提高电池开路电压.通过优化NiO薄膜厚度,制备得到转换效率为12.2%、开路电压为789 mV的碲化镉太阳电池.研究证实NiO是用来制备高转换效率、高稳定性碲化镉薄膜太阳电池的一种极有前景的缓冲层材料.     

超薄Fe层在反铁磁NiO(001)面上沉积的研究

通过分子束外延(MBE)和脉冲激光沉积(PLD)方法，将1—10个Fe原子层(ML)以楔形方式沉积到反铁磁单晶NiO(001)基片上.表面磁光克尔效应的原位测试结果表明：通过MBE沉积的Fe原子层在Fe/NiO界面处产生了约2ML的磁死层；而通过PLD沉积的Fe原子层在Fe/NiO界面处产生了约3ML的磁死层.X射线光电子能谱对Fe/NiO界面进行研究的结果表明，在Fe原子与单晶NiO间发生了界面化学反应. 关键词： 磁性薄膜 表面磁性 X射线光电子能谱     

MoO3为缓冲层的高效非掺杂蓝色有机发光二极管

以典型蓝色发光材料-联苯乙烯衍生物(4,4’-bis(2,2’-diphenylvinyl) -1,1’-biphenyl,DPVBi)为发光层,采用MoO3为阳极缓冲层制备了结构简单的非掺杂型蓝色有机电致发光器件.在电流密度为20 mA/cm2、MoO3缓冲层厚度为0.5 nm对器件效率约为无缓冲层器件效率的18倍,...     

Epitaxial growth and magnetic exchange anisotropy in Fe3O4<Emphasis Type="Bold">/NiO bilayers grown on MgO(001) and Al</Emphasis>2O3(0001)

Epitaxial Fe3O4/NiO bilayers were epitaxially grown on MgO(001) and Al2O3(0001) substrates to investigate the influence of the fully spin compensated (001) and the non-compensated (111) NiO interface planes between the ferromagnetic (F) and antiferromagnetic (AF) layers on the AF/F exchange coupling. Bilayers of different magnetite thicknesses and constant NiO thickness were investigated. The structural characterizations indicate a perfect epitaxy of the two layers for the both growth directions in the two Fe3O4/NiO/MgO(001) and NiO/Fe3O4/Al2O3(0001) systems. An epitaxial ferrimagnetic (Ni,Fe)Fe2O4 phase is observed at the AF/F interface when the NiO oxide is grown on the top of the Fe3O4 layer while a perfectly flat AF/F interface is observed in the Fe3O4/NiO/MgO(001) system exhibiting only a very slight interdiffusion. Magnetic measurements indicate a relative strong bias at 300 K for the bilayers grown on Al2O3(0001), which decreases with the inverse of the ferrimagnetic layer thickness as theoretically expected. On the contrary, a zero exchange biasing is observed at 300 K for the bilayers grown on MgO(001).     

Bright flexible organic light-emitting devices on copy paper substrates

We have developed flexible top emission organic light-emitting devices (OLEDs) using copy paper substrates. Poly-2-chloro-p-xylylene and SiO₂ buffer layers were coated on the copy paper for protecting the water absorption and improving the barrier and morphological characteristics. Sputtered Ni and thermally evaporated Ca/Ag films were used as anode and semitransparent cathode, respectively. The electrical conduction, luminance, and efficiency characteristics of the copy paper-based flexible OLEDs were investigated. The SiO₂ buffer layer was critically important in obtaining the high performance devices. The device exhibited a high luminance of 2200 cd/m² at a driving voltage of 13 V.