Effect of Er doping on optical band gap energy of TiO2 thin films prepared by spin coating

In order to evaluate the effect of Er doping in the range of 0–1.0 mol% on optical indirect band gap energy (E_g) of the film, the Er-doped TiO₂ (Er-TiO₂) thin films were spin-coated onto fluorine-doped SnO₂ coated (FTO) glasses. Glancing angle X-ray diffraction (GAXRD) results indicated that the films whose thickness was 550 nm consisted of pure anatase and FTO substrate. The anatase (101) TiO₂ peaks became broader and weaker with the rise in Er content. The apparent crystallite size decreased from 12 nm to 10 nm with increasing the amount of Er from 0 mol% to 1.0 mol%. UV–vis spectrophotometry showed that the values of E_g decreased from 3.25 eV to 2.81 eV with the increase of Er doping from 0 to 0.7 mol%, but changed to 2.89 eV when Er content was 1.0 mol%. The reduction in E_g might be attributed to electron and/or hole trapping at the donor and acceptor levels in the TiO₂ band structure.     

Magnon spectrum of a symmetric-spin nanocontact on a ferromagnetic ultrathin film

A theoretical model is presented for the study of the magnetic properties and the coherent magnon transport via monatomic chains in ultrathin magnetic films. In particular, we studied a finite number of monatomic chains joining two slabs of ferromagnetic material. Each slab consists of five atomic layers of a cubic lattice with magnetically ordered spins coupled by the Heisenberg exchange. The system is supported on a non-magnetic substrate and otherwise considered free from magnetic interactions. The spin dynamics of the ultrathin film is studied by the matching method. The individual and the total magnon transmissions of the ultrathin ferromagnetic film, scattering coherently at the nanojunction zone, and the localized spin states in the boundary domain are calculated and analyzed. The interatomic magnetic exchange is varied on the boundary domain specifically for three cases of magnetic exchange to investigate the consequences of magnetic softening and hardening for the calculated properties. Numerical results show characteristic interference effects between the incident spinwaves and the localized spin states of the nanocontact. The calculated properties are presented for arbitrary incidence of the magnons on the boundary, for all accessible frequencies in the propagating bands, and for the interatomic magnetic exchange of the magnetic film. The localized magnon branches created by the nanocontact domain are observed in the Brillouin zone.     

Voltage control of millimeter-wave ferromagnetic resonance in multiferroic heterostructures thin films

Multiferroic heterostructures thin films, SrBi₂Ta₂O₉/BaFe₁₂O₁₉ (SBT/BaM), were grown on Pt/TiO₂/SiO₂/Si substrates by using magnetron sputtering and Sol-gel ways. X-ray diffractometer (XRD) analysis showed that only SBT and BaM phases appeared in the multiferroic heterostructures. Magnetic hysteresis loops revealed that the saturated magnetization was 3.7 kG and the M-H characteristics of SBT/BaM were not influenced by the presence of the SBT layer. Ferromagnetic resonance (FMR) measurement showed the lowest FMR linewidth of 205 Oe at 50 GHz. Additionally, when direct-current electric field was applied to SBT layer, as a result of which mechanical deformation of the ferromagnetic layer occurred that leads to a frequency shift in ferromagnetic resonance and the magnetoelectric coupling effect (α) is 1.8 MHz*cm/kV. Our findings indicate that these SBT/BaM thin films have a significant potential for the usage in millimeter wave tunable devices.     

Many-body Green's function theory for the magnetic reorientation of thin ferromagnetic films

The field-induced reorientation of the magnetization of ferromagnetic films is treated within the framework of many-body Green's function theory by considering all components of the magnetization. We present a new method for the calculation of expectation values in terms of the eigenvalues and eigenvectors of the equations of motion matrix for the set of Green's functions. This formulation allows a straightforward extension of the monolayer case to thin films with many layers and for arbitrary spin and moreover provides a practicable procedure for numerical computation. The model Hamiltonian includes a Heisenberg term, an external magnetic field, a second-order uniaxial single-ion anisotropy, and the magnetic dipole-dipole coupling. We utilize the Tyablikov (RPA) decoupling for the exchange interaction terms and the Anderson-Callen decoupling for the anisotropy terms. The dipole coupling is treated in the mean-field approximation, a procedure which we demonstrate to be a sufficiently good approximation for realistic coupling strengths. We apply the new method to monolayers with spin and to multilayer systems with S=1. We compare some of our results to those where mean-field theory (MFT) is applied to all interactions, pointing out some significant differences. Received 19 June 2000 and Received in final form 2 August 2000     

Structural and optical properties of nanocrystalline ZnO thin films synthesized by the citrate precursor route

Nanocrystalline zinc oxide (ZnO) thin films have been deposited by spin-coating polymeric precursors synthesized by the citrate precursor route using ethylene glycol and citric acid as chelating agents. The ZnO thin films were annealed in air at different temperatures for 10 min. The films were characterized by different structural and optical techniques, including X-ray diffraction (XRD), atomic force microscopy (AFM), optical transmission spectroscopy, and photoluminescence (PL). The thermal decomposition of polymeric precursor was studied by thermogravimetric analysis (TGA). XRD analysis with grazing incidence and rocking curves indicate that the ZnO films are polycrystalline with preferential orientation along the c-axis direction with a full-width at half-maximum (FWHM) of 0.31° for 600 °C-annealed samples. On annealing, the texturing in films increased along with a decrease in FWHM. AFM micrographs illustrate that the ZnO films are crack-free with well-dispersed homogeneous and uniformly distributed spherical morphology. The synthesized ZnO thin films have transparency >85% in the visible region exhibiting band edge at 375 nm, which becomes sharper with anneal. Room temperature PL spectra of these films show strong ultraviolet (UV) emission around 392 nm with an increase in intensity with annealing temperature, attributed to grain growth. Deconvolution of the PL spectra reveals that there is coupling of free excitons with higher orders of longitudinal optical (LO) phonon replicas leading to a broad asymmetric near-band-edge peak.     

Chemical,optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition

Thin Ga₂O₃ films were grown on Si (100) using trimethylgallium (TMG) and oxygen as the precursors through plasma-enhanced atomic layer deposition. The depositions were made over a temperature range of 80–250?°C with a growth per cycle of around 0.07 nm/cycle. Surface self-saturating growth was obtained with TMG pulse time ≥20?ms?at a temperature of 150?°C. The root mean square surface roughness of the obtained Ga₂O₃ films increased from 0.1?nm to 0.3?nm with increasing the growth temperature. Moreover, the x-ray photoelectron spectroscopy analysis indicated that the obtained film was Ga-rich with the chemical oxidation states Ga³⁺ and Ga¹⁺, and no carbon contamination was detected in the films after Ar⁺ sputtering. The electron density of films measured by x-ray reflectivity varied with the growth temperature, increasing from 4.72 to 5.80?g/cm³. The transmittance of Ga₂O₃ film deposited on a quartz substrate was obtained through ultraviolet visible (UV–Vis) spectroscopy. An obvious absorption in the deep UV region was demonstrated with a wide band gap of 4.6–4.8?eV. The spectroscopic ellipsometry analysis indicated that the average refractive index of the Ga₂O₃ film was 1.91?at 632.8?nm and increased with the growth temperature due to the dense structure of the films. Finally, the I-V and C-V characteristics proved that the Ga₂O₃ films prepared in this work had a low leakage current of 7.2?×?10^?11 A/cm² at 1.0?MV/cm and a high permittivity of 11.9, suitable to be gate dielectric.     

Nonlinear dynamic structure rearrangement of vortexlike domain walls in magnetic films with in-plane anisotropy

The nonlinear dynamic behavior of vortexlike domain walls in magnetic uniaxial films having an in-plane anisotropy was investigated within a rigorous micromagnetic approach in the framework of a two-dimensional magnetization distribution by numerically solving the Landau–Lifshitz equations (with the Gilbert damping parameter) with allowance for all the main interactions, including the dipole–dipole one. The studies were carried out on magnetic soft films with an anisotropy axis lying in their plane in a dc magnetic field parallel to an easy axis and a pulsed magnetic field normal to it. New possibilities for controlling the nonlinear dynamic rearrangement of the internal structure of domain walls and their velocities in fields both above and below the critical field are established. The wall motion in the field above the critical one is nonstationary.     

Microstructure and magnetic properties studies of SmCo5 thin films grown on MgO and glass substrates

In this work, SmCo₅ thin films are deposited on single crystal MgO (1 0 0) and amorphous glass substrates with a Cr underlayer at 400 °C by sputtering. A comparison study shows that the microstructures and magnetic properties are different in the two SmCo₅ films on the MgO (1 0 0) and glass substrates, respectively. An epitaxial growth of Cr-(2 0 0)〈1 1 0〉/SmCo₅-(1 1 2¯ 0)〈0 0 0 1〉 is achieved on the MgO (1 0 0) single crystal substrate with an average grain size of 20 nm for SmCo₅. On the amorphous glass substrate, no significant crystallographic texture is found in the Cr underlayer. After the deposition of SmCo₅, a weak texture of (1 1 2¯ 0) is observed with an average grain size of 8 nm. High remanence ratio value in this film is probably due to strong exchange coupling. Both SmCo₅ films show high in-plane coercivity, high in-plane anisotropy and remanence enhancement.     

Defect induced ferromagnetism in carbon-doped ZnO thin films

We report on room temperature ferromagnetism in C-doped ZnO thin films prepared by electron beam evaporation. Magnetization, Hall effect, X-ray photoemission spectroscopy (XPS) and X-ray diffraction studies have been conducted to investigate the source and nature of ferromagnetism in C-doped ZnO. The samples were observed to have n-type conduction with the carrier concentration increasing with C doping. XPS does not give any evidence for C substituted at the O site, and is more consistent with the formation of C-O bonds and with the presence of C primarily in the +4 state. It is suggested that the ferromagnetism originates in the development of Zn vacancies that are stabilized due to the incorporation of C in a high valence state (C⁴⁺).     

Softening of spin-wave stiffness near the ferromagnetic phase transition in diluted magnetic semiconductors

Employing the self-consistent Green's function approach, we studied the temperature dependence of the spin-wave stiffness in diluted magnetic semiconductors. Note that the Green's function approach includes the spatial and temperature fluctuations simultaneously which was not possible within conventional Weiss mean-field theory. It is rather interesting that we found the stiffness becomes dramatically softened as the critical temperature is approached, which seems to explain the mysterious sharp drop of magnetization curves in samples within diffusive regime.     

Effects of annealing on properties of ZnO thin films prepared by electrochemical deposition in chloride medium

The development of cost-effective and low-temperature synthesis techniques for the growth of high-quality zinc oxide thin films is paramount for fabrication of ZnO-based optoelectronic devices, especially ultraviolet (UV)-light-emitting diodes, lasers and detectors. We demonstrate that the properties, especially UV emission, observed at room temperature, of electrodeposited ZnO thin films from chloride medium (at 70 °C) on fluor-doped tin oxide (FTO) substrates is strongly influenced by the post-growth thermal annealing treatments. X-ray diffraction (XRD) measurements show that the films have preferably grown along (0 0 2) direction. Thermal annealing in the temperature range of 150-400 °C in air has been carried out for these ZnO thin films. The as-grown films contain chlorine which is partially removed after annealing at 400 °C. Morphological changes upon annealing are discussed in the light of compositional changes observed in the ZnO crystals that constitute the film. The optical quality of ZnO thin films was improved after post-deposition thermal treatment at 150 °C and 400 °C in our experiments due to the reducing of defects levels and of chlorine content. The transmission and absorption spectra become steeper and the optical bandgap red shifted to the single-crystal value. These findings demonstrate that electrodeposition have potential for the growth of high-quality ZnO thin films with reduced defects for device applications.     

Electronic and optical properties in ZnO:Ga thin films induced by substrate stress

The effects of biaxial stress in ZnO:Ga thin films on different substrates, e.g., sapphire(0001), quartz, Si(001), and glass have been investigated by X-ray diffraction, atomic force microscopy, and electrical transport and ellipsometric measurements. A strong dependence of orientation, crystallite size, transport, and electronic properties upon the substrate-induced stress has been found. The structural properties indicate that a tensile stress exists in epitaxial ZnO:Ga films grown on sapphire, Si, and quartz, while a compressive stress appears in films grown on glass. The resistivity of the films decreased with increasing biaxial stress, which is inversely proportional to the product of the carrier concentration and Hall mobility. The refractive index n was found to decrease with increasing biaxial stress, while the optical band gap E₀ increased with stress. These behaviors are attributed to lattice contraction and the increase in the carrier concentration that is induced by the stress. Our experimental data suggest that the mechanism of substrate-induced stress is important for understanding the properties of ZnO:Ga thin films and for the fabrication of devices which use these materials.     

Electrical and optical properties of ZnO thin films prepared by magnetron rf sputtering—influence of Al, Er and H

The influence of Al, Er and H in ZnO thin films (ZnO:Al, ZnO:Er and ZnO:H) deposited by magnetron sputtering at different substrate temperatures, T_s, on their optical, structural and electrical properties was investigated. X-ray diffraction (XRD) analyses show an improvement of the crystalline structure with increasing T_s. The optical band gap, , of the films, from transmission and reflection spectra, ranged from 3.27 to 3.41 eV. The Urbach band tail width was also calculated. Incorporation of Al and Er resulted in a reduced and an increased resistivity, ρ, respectively, and an increase in the Urbach tail width in both cases. However, sputtering in an Ar+H₂ gas mixture led to an increase in ρ and an improvement in the structural order of the films. A discussion of the influence of T_s and of Al, Er and H on the properties is presented.     

A new strip line broad-band measurement evaluation for determining the complex permeability of thin ferromagnetic films

In the present paper, a new method for determining the frequency dependent complex permeability of thin magnetic films, designed for measurements up to 5 GHz, is presented. The measurement technique described here was carried out by a one-port permeameter, which is based on a short-circuited strip line. The complex permeability was deduced by a new analytical approach from the measured reflection coefficient of a strip line (S₁₁) with and without a ferromagnetic film material inside. An adaptive error correction was applied in the measurement procedure. The spectral permeability of thin FeCoAlN films with an in-plane uniaxial anisotropy of μ₀^*H_a=3.2 mT induced by annealing at CMOS temperatures in a static magnetic field was investigated. The measurements were compared with a theoretical model taking the Landau–Lifshitz and eddy current theories into account. A resonant frequency of about 1.6 GHz was observed.     

Many-body Green's function theory for thin ferromagnetic anisotropic Heisenberg films: treatment of the exchange anisotropy

The many-body Green's function theory developed in our previous work for treating the reorientation of the magnetization of thin ferromagnetic films is extended to include the exchange anisotropy. This leads to additional momentum dependencies which require some non-trivial changes in the formalism. The theory is developed for arbitrary spin values S and for multilayers. The effects of the exchange anisotropy and the single-ion anisotropy, which was treated in our earlier work, on the magnetic properties of thin ferromagnetic films are compared. Received 31 October 2002 Published online 7 May 2003     

Thermal stress induced band gap variation of ZnO thin films

The growth temperature and post annealing-dependent optical and structural effect of RF magnetron sputtered ZnO thin films were examined. As the growth temperature increased, the lattice constant increased and approached the bulk value, suggesting a decrease in interfacial strain between the substrate and thin film. For the post annealed samples, the interfacial strain decreased further and was close to the bulk value regardless of the post annealing environments (in air and O₂). The optical properties of all ZnO thin films examined and revealed higher transparency (>90%). Furthermore, the optical band gap varied according to the growth temperature and post annealing environments due to a decrease in the interfacial strain effect.     

Brillouin scattering of light by spin waves in ferromagnetic nanorods

We report the investigations of spin wave modes of arrays of Ni and Co nanorods using Brillouin light scattering. We have revealed the significant influence of spin wave modes along the nanorod axis in contrast to infinite magnetic nanowires. Unusual optical properties featuring an inverted Stokes/anti-Stokes asymmetry of the Brillouin scattering spectra have been observed. The spectrum of spin wave modes in the nanorod array has been calculated and compared with the experiment. Experimental observations are explained in terms of a combined numerical–analytical approach taking into account both the low aspect ratio of individual magnetic nanorods and dipolar magnetic coupling between the nanorods in the array. The optical studies of spin-wave modes in nanorod metamaterials with low aspect ratio nanorods have revealed new magnetic and magneto-optical properties compared to continuous magnetic films or infinite magnetic nanowires. Such magnetic artificial materials are important class of active metamaterials needed for prospective data storage and signal processing applications.     

Spin-wave dispersion in ferromagnetic semiconductor superlattices and thin films in the narrow-band limit

Bulk and surface magnetic excitations of the semi-infinite ferromagnetic semiconductor (FMS) superlattices and thin films described by Heisenberg and s-d model are analyzed using the transfer matrix method, developed in our previous work. Results are discussed in the narrow-band limit. The spin-wave frequencies for the semi-infinite narrow-band semiconductors are analyzed in both low- and high-frequency regions. Energies of localized excitations are compared to the bulk and the results of Green function formalism. Depending on the parameters of the system, the surface spin waves appear as “acoustical” and “optical”, and there are only some quantitative difference in the high-frequency region, comparing our method and the Green function method. In the framework of the same methodology, bulk and surface magnetic excitations of more complicated superlattices and thin films made of the FMS superlattices are analyzed in terms of dependence of the system parameters. It is shown that the s-d interaction governs the behavior of the systems. Dependence on bulk and surface parameters is discussed.     

Crystallisation of TiO2 thin films induced by excimer laser irradiation

Titanium dioxide thin films have been deposited by reactive magnetron sputtering on glass substrate and subsequently irradiated by UV radiation using a KrF excimer laser. In this work, we have study the influence of the laser fluence (F) ranging between 0.05 and 0.40 mJ/cm² on the constitution and microstructure of the deposited films. Irradiated thin films are characterized by profilometry, scanning electron microscopy and X-ray diffraction. As deposited films are amorphous, while irradiated films present an anatase structure. The crystallinity of the films strongly varies as a function of F with maximum for F = 0.125 J/cm². In addition to the modification of their constitution, the irradiated areas present a strongly modified microstructure with appearance of nanoscale features. The physico-chemical mechanisms of these structural modifications are discussed based on the theory of nucleation.