Theoretical model of spin transfer torque in multilayers

We present a model of spin transport in a Co/Cu(1 1 1)/Co pseudo-spin-valve (PSV) structure where current is flowing in the current perpendicular-to-plane (CPP) geometry. The model considers ballistic spin-dependent transmission at the two Co–Cu interfaces, as well as diffusive spin relaxation within the Cu spacer and free Co layer. In the latter, the spin relaxation process is composed of the usual longitudinal spin relaxation due to spin flip scattering, as well as transverse spin relaxation due to spin precession. The resulting spin transfer torque exerted on the moments within the free Co layer is composed of two contributions, the main contribution coming from “absorbed” spins in the interfacial regions. The second contribution arises from the relaxation of spin accumulation within the free Co layer. The calculated critical current density for switching is estimated to be approximately between 3.3×10⁷ and 1.1×10⁸ A/cm², which is in agreement with available experimental results.     

Temperature evolution of spin-transfer switching in nonlocal spin valves with dipolar coupling

The spin-transfer effect has been achieved in nanoscale metallic nonlocal spin valves. A magnetic domain (∼70×150 nm²) in an extended wire can be switched by a pure spin current between 4.5 and 200 K. The dipolar coupling between the magnetic spin injector (F₁) and spin detector (F₂), the surface anisotropy of the thin F₂ layer, and the thermal instability of F₂ generates complex switching characteristics. Analysis of the results allows for detailed understanding of magnetic configurations during the current-sweep and the field-sweep measurements. The critical current (I_c) for spin-transfer switching gradually decreases as the temperature increases. The I_c⁺ for the transition from parallel (P) state to antiparallel (AP) state decreases faster than the I_c^‐ for the transition from AP to P due to the dipolar coupling. Above 200 K, the dipolar coupling and the thermal instability prevents a stable P state in the absence of an external field.     

Orbital moments of 3d adatoms and Co nanostructures on Cu(0 0 1) surfaces

We use ab initio calculations to investigate spin and orbital moments of 3d transition-metal adatoms and Co nanostructures on Cu(0 0 1) surfaces. For Fe and Co adatoms on Cu(0 0 1) we predict extremely large orbital moments, comparable to the spin moments at these sites. For Mn and Cr adatoms the orbital moments are extremely small and can be neglected in face of their rather large spin moments. Ni adatoms on Cu(0 0 1) were found to be non-magnetic. Our investigations for adsorbed flat clusters of Co on Cu(0 0 1) address the persistence and extent of these large orbital moments in the clusters as a function of their size. We find that, the average orbital moment (M_orb) per Co atom is strongly correlated with the coordination number, decreasing drastically and monotonically as the average number of first Co neighbors around the sites in the cluster (N_Co) is increased.     

Magnetic properties of Sm-based bulk metallic glasses

We perform detailed investigation on the magnetization and specific heat of Sm-based ternary bulk metallic glasses with different Co contents at low temperature. A low temperature cluster spin-glass phase below T_f ∼25 K is evidenced for all samples. This cluster spin-glass behavior is ascribed to competition among the multi-fold magnetic interactions and the intrinsic structural inhomogeneity. The magnetic relaxation behavior of the spin-glass phase can be well described using the stretched exponential dynamics. The magnetic hysteresis under field-cooling condition and spin dynamics further demonstrate the low temperature cluster spin-glass behavior. It is revealed that the Co atoms play an important role in modulating the physical properties of the present Sm-based ternary metallic glasses.     

Huge exchange-coupling field observed in FeMn-pinned spin valve with ultra-thin pinned NiFe layer

A conventional Ta/NiFe/Cu/NiFe/FeMn/Ta spin valve multilayer was prepared to investigate the exchange bias variations of the pinned NiFe layer. An exchange bias field of 560 Oe has been found in a valve multilayer with ultra-thin pinned NiFe layers (1 nm), in which a large constant magnetic field of 700 Oe was applied during film deposition procession. The observed results are attributed to the large applied magnetic field, which produced more net spins of the antiferromagnet at the interface. These interfacial uncompensated spins provide the net spin moments required for exchange coupling and bias.     

Property changes of electroplated Cu/Co alloys and multilayers by organic additives

We investigated the change of magnetic properties of the electroplated Cu/Co alloys and multilayers caused by organic additives and high temperature annealing. When plated with a pure Cu/Co electrolyte, the alloy contained ∼25% of Cu and ∼75% of Co. The alloy was made of hcp-Co, fcc-Co and Cu(1 1 1) and was super-paramagnetic at room temperature. As we add a few organic additives in the plating electrolyte, the hcp-Co of the films disappeared. The organic additives contained in the electrolytes changed paramagnetic Cu/Co multilayers to ferromagnets. High-temperature thermal annealing increased coercivity due to the growth of the Co grains.     

Tailoring exchange bias by oxidizing Co film across a Cu wedge in Cu(wedge)/CoO/Co/Cu(0 0 1)

A new method was developed to control Co film oxidation in an epitaxially grown Cu(wedge)/Co/Cu(0 0 1) film. By annealing the film at 200 °C within 10⁻⁶ Torr oxygen environment, we find that the top Cu wedge controls the Co underlayer oxidation continuously as a function of the Cu film thickness. Magneto-Optic Kerr Effect measurement shows that the exchange bias of the resulting CoO/Co film exhibits a systematic variation with the Cu thickness, thus offering a new method of tailoring the exchange bias of CoO/Co films.     

New materials research for high spin polarized current

The author reports here a thorough investigation of structural and magnetic properties of Co₂FeAl_0.5Si_0.5 Heusler alloy films, and the tunnel magnetoresistance effect for junctions with Co₂FeAl_0.5Si_0.5 electrodes, spin injection into GaAs semiconductor from Co₂FeAl_0.5Si_0.5, and spin filtering phenomena for junctions with CoFe₂O₄ ferrite barrier. It was observed that tunnel magnetoresistance ratio up to 832%(386%) at 9 K (room temperature), which corresponds to the tunnel spin polarization of 0.90 (0.81) for the junctions using Co₂FeAl_0.5Si_0.5 Heusler electrodes by optimizing the fabrication condition. It was also found that the tunnel magnetoresistance ratio are almost the same between the junctions with Co₂FeAl_0.5Si_0.5 Heusler electrodes on Cr buffered (1 0 0) and (1 1 0) MgO substrates, which indicates that tunnel spin polarization of Co₂FeAl_0.5Si_0.5 for these two direction are almost the same. The next part of this paper is a spin filtering effect using a Co ferrite. The spin filtering effect was observed through a thin Co-ferrite barrier. The inverse type tunnel magnetoresistance ratio of −124% measured at 10 K was obtained. The inverse type magnetoresistance suggests the negative spin polarization of Co-ferrite barrier. The magnetoresistance ratio of −124% corresponds to the spin polarization of −0.77 by the Co-ferrite barrier. The last part is devoted to the spin injection from Co₂FeAl_0.5Si_0.5 into GaAs. The spin injection signal was clearly obtained by three terminal Hanle measurement. The spin relaxation time was estimated to be 380 ps measured at 5 K.     

Spin-pumping-enhanced magnetic damping in ultrathin Cu(0 0 1)/Co/Cu and Cu(0 0 1)/Ni/Cu films

The influence of the Cu capping layer thickness on the spin pumping effect in ultrathin epitaxial Co and Ni films on Cu(0 0 1) was investigated by in situ ultrahigh vacuum ferromagnetic resonance. A pronounced increase in the linewidth is observed at the onset of spin pumping for capping layer thicknesses d_Cu larger than 5 ML, saturating at d_Cu = 20 ML for both systems. The spin mixing conductance for Co/Cu and Ni/Cu interfaces was evaluated.     

Spin transport and relaxation in graphene

We review our recent work on spin injection, transport and relaxation in graphene. The spin injection and transport in single layer graphene (SLG) were investigated using nonlocal magnetoresistance (MR) measurements. Spin injection was performed using either transparent contacts (Co/SLG) or tunneling contacts (Co/MgO/SLG). With tunneling contacts, the nonlocal MR was increased by a factor of ∼1000 and the spin injection/detection efficiency was greatly enhanced from ∼1% (transparent contacts) to ∼30%. Spin relaxation was investigated on graphene spin valves using nonlocal Hanle measurements. For transparent contacts, the spin lifetime was in the range of 50-100 ps. The effects of surface chemical doping showed that for spin lifetimes in the order of 100 ps, charged impurity scattering (Au) was not the dominant mechanism for spin relaxation. While using tunneling contacts to suppress the contact-induced spin relaxation, we observed the spin lifetimes as long as 771 ps at room temperature, 1.2 ns at 4 K in SLG, and 6.2 ns at 20 K in bilayer graphene (BLG). Furthermore, contrasting spin relaxation behaviors were observed in SLG and BLG. We found that Elliot-Yafet spin relaxation dominated in SLG at low temperatures whereas Dyakonov-Perel spin relaxation dominated in BLG at low temperatures. Gate tunable spin transport was studied using the SLG property of gate tunable conductivity and incorporating different types of contacts (transparent and tunneling contacts). Consistent with theoretical predictions, the nonlocal MR was proportional to the SLG conductivity for transparent contacts and varied inversely with the SLG conductivity for tunneling contacts. Finally, bipolar spin transport in SLG was studied and an electron-hole asymmetry was observed for SLG spin valves with transparent contacts, in which nonlocal MR was roughly independent of DC bias current for electrons, but varied significantly with DC bias current for holes. These results are very important for the use of graphene for spin-based logic and information storage applications.     

Carbon monoxide adsorption on the metastable fcc-Co/Cu(1 0 0) surface

The adsorption properties of CO on the epitaxial five-monolayer Co/Cu(1 0 0) system, where the Co overlayer has stabilized in the metastable fcc-phase, are reported. This system is known to exhibit metallic quantum well (MQW) states at energies 1 eV or greater above the Fermi level, which may influence CO adsorption. The CO/fcc-Co/Cu(1 0 0) system was explored with low energy electron diffraction (LEED), inverse photoemission (IPE), reflection-absorption infrared spectroscopy (RAIRS) and temperature programmed desorption (TPD). Upon CO adsorption, a new feature is observed in IPE at 4.4 eV above E_F and is interpreted as the CO 2π^∗ level. When adsorbed at room temperature, TPD exhibits a CO desorption peak at ∼355 K, while low temperature adsorption reveals additional binding configurations with TPD features at ∼220 K and ∼265 K. These TPD peak temperatures are correlated with different C-O stretch vibrational frequencies observed in the IR spectra. The adsorption properties of this surface are compared to those of the surfaces of single crystal hcp-Co, as well as other metastable thin film systems.     

Intrinsic spin Hall effect in silicene: transition from spin Hall to normal insulator

An intrinsic contribution to the spin Hall effect in two‐dimensional silicene is considered theoretically within the linear response theory and Green's function formalism. When an external voltage normal to the silicene plane is applied, the spin Hall conductivity is shown to reveal a transition from the spin Hall insulator phase at low bias to the conventional insulator phase at higher voltages. This transition resembles the recently reported phase transition in bilayer graphene. The spin–orbit interaction responsible for this transition in silicene is much stronger than in graphene, which should make the transition observable experimentally. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural and morphological characterisation of hybrid Cu/Si(0 0 1) structures

The structural and morphological properties of epitaxial Cu/Si(0 0 1) type of structures have been investigated by a combination of electron, X-ray and scanning probe imaging techniques. Auger electron spectroscopy measurements indicate the presence of Si in the Cu layer for Cu thicknesses up to 10 nm. In addition, X-ray scattering results show that there is a mosaic spread in the Cu(0 0 1) crystal which decreases as the Cu thickness increases, from 8° at 15 nm to 4.5° at 100 nm. This behaviour is corroborated by reflection high energy electron diffraction patterns of the Cu surface measured during growth, which exhibit a twinning in the diffraction spots for the 15 and 30 nm Cu films. Atomic force and scanning electron microscopy imaging of Cu(4 nm)/Co(7,17 nm)/Cu(100 nm)/Si(0 0 1) structures allow one to visualise and characterise the sample surface in real space; from these measurements, an average roughness amplitude of ∼0.5 nm and a correlation length of ∼50 nm are obtained. Our results provide a better understanding of an important system which has been widely used as a template for the growth of epitaxial ultrathin magnetic films.     

TaN underlayers for spin valves deposited directly on top of Si substrates

TaN underlayers for spin valves were studied, which were deposited directly on top of Si substrates. The experimental results obtained with the TaN underlayer were compared with those obtained with other (Ta, Mo, and MoN) underlayers. The spin valve structure was Si/Underlayer(tÅ)/NiFe(21 Å)/CoFe(28 Å)/Cu(22 Å)/CoFe(18 Å)/IrMn(65 Å)/Ta(25 Å). The TaN underlayer for a spin valve element exhibited good adhesion to the Si substrate. The XRD patterns of the annealed TaN on bare Si substrate at 900 °C showed no Ta silicide phases, which suggests that the TaN layer may also be used as a diffusion barrier between Si substrate and the ensuing spin valve active layers, as well as an underlayer. A spin valve element having TaN underlayer deposited directly on top of a Si substrate showed a high MR ratio of about 8.3% after annealing at 200 °C. It is concluded that it is advantageous to use a TaN underlayer if one wants to fabricate spin valve elements directly on top of Si substrates.     

Improved growth and the spin reorientation transition of Ni on (√2×2√2)R45° reconstructed O/Cu(0 0 1)

Ni films between 1 and 20 monolayers (ML) thick are deposited at room temperature on clean and (√2×2√2)R45° reconstructed--via oxygen adsorption--Cu(0 0 1). A significant expansion of the out-of-plane Ni phase by about 5 ML is revealed by ferromagnetic resonance experiments. This shift of the spin reorientation transition is attributed to a huge change of about 90 μeV/atom in the surface anisotropy due to the presence of half a monolayer of oxygen atoms on the top of Ni. Furthermore, the growth of Ni on the preoxidized Cu surface is found to be closer to the layer-by-layer one as compared to the growth on the clean Cu(0 0 1) due to the presence of oxygen which acts as a surfactant.     

Optimised adiabatic fast passage spin flipping for He neutron spin filters

We describe here a method of performing adiabatic fast passage (AFP) spin flipping of polarized ³He used as a neutron spin filter (NSF) to polarize neutron beams. By reversing the spin states of the ³He nuclei the polarization of a neutron beam can be efficiently reversed allowing for the transmission of a neutron beam polarized in either spin state. Using an amplitude modulated frequency sweep lasting 500 ms we can spin flip a polarized ³He neutron spin filter with only 1.8×10⁻⁵ loss in ³He polarization. The small magnetic fields (10-15 G) used to house neutron spin filters mean the ³He resonant frequencies are low enough to be generated using a computer with a digital I/O card. The versatility of this systems allows AFP to be performed on any beamline or in any laboratory using ³He neutron spin filters and polarization losses can be minimised by adjusting sweep parameters.     

Characterisation and application of a SPLEED-based spin polarisation analyser

A commercial electron spin analyser, based on spin-polarised low-energy electron diffraction (SPLEED) from W(1 0 0), has been characterised with incident polarised electron beams from a standard GaAs polarised electron source. The dependence of the Sherman function on the scattering energy and elapse time after CO-flash of the tungsten crystal of the analyser have been measured. The influence of the stray magnetic field on the performance of the analyser has been investigated. The spin analyser has been applied in monitoring the reorientation transition of the easy magnetisation direction of Fe films on W(1 1 0) upon the exposure of CO adsorbent on the surface.     

Oxidation studies of niobium thin films at room temperature by X-ray reflectivity

We report the results of growth kinetics of oxidation process on niobium thin film surfaces exposed to air at room temperature by using a surface sensitive non-destructive X-ray reflectivity technique. The oxidation process follows a modified Cabrera-Mott model of thin films. We have shown that the oxide growth is limited by the internal field due to the contact potential which develops during the initial stage of oxidation. The calculated contact potential for 100 and 230 Å thick films is 0.81 ± 0.14 and 1.20 ± 0.11 V respectively. We report that 40% increase in the contact potential increases the growth rate for the first few mono layers of Nb₂O₅ from ∼2.18 to ∼2790 Å/s. The growth rates of oxidation on these samples become similar after the oxide thicknesses of ∼25 Å are reached. We report on the basis of our studies that a protective layer should be grown in situ to avoid oxidation of Nb thin film surface of Nb/Cu cavities.     

The ideal relativistic rotating gas as a perfect fluid with spin

We show that the ideal relativistic spinning gas at complete thermodynamical equilibrium is a fluid with a non-vanishing spin density tensor σ_μν. After having obtained the expression of the local spin-dependent phase-space density f(x, p)_στ in the Boltzmann approximation, we derive the spin density tensor and show that it is proportional to the acceleration tensor Ω_μν constructed with the Frenet-Serret tetrad. We recover the proper generalization of the fundamental thermodynamical relation, involving an additional term −(1/2)Ω_μνσ^μν. We also show that the spin density tensor has a non-vanishing projection onto the four-velocity field, i.e. t^μ = σ_μνu^ν ≠ 0, in contrast to the common assumption t^μ = 0, known as Frenkel condition, in the thus-far proposed theories of relativistic fluids with spin. We briefly address the viewpoint of the accelerated observer and inertial spin effects.     

μSR Investigation of magnetic phases in R1−xSrxCoO3 oxides (R=Pr, Nd)

We report results of our muon spin relaxation measurements in the series of polycrystalline compounds Pr_1−xSr_xCoO₃ (x=0.3, 0.4 and 0.5) and Nd_1−xSr_xCoO₃ (x=0.3 and 0.5). For the Pr-based samples our data clearly indicate the existence of two magnetic transitions, as also inferred from macroscopic measurements. While the high temperature transition is typical for cobaltites (∼200 K), the low temperature one is unusual. In our experiments it occurs below about 120 K and it manifests itself as a change in the slope of the temperature variation of the muon spin depolarization rate λ(T). For the Nd-based samples we found an increase of the muon spin depolarization rate below 45 K, temperature at which the sample is ferrimagnetic, when the Nd sublattice coupled antiparallel to the Co lattice. No phase separation could be evidenced in our samples by μSR experiments.