Huge exchange-coupling field observed in FeMn-pinned spin valve with ultra-thin pinned NiFe layer

A conventional Ta/NiFe/Cu/NiFe/FeMn/Ta spin valve multilayer was prepared to investigate the exchange bias variations of the pinned NiFe layer. An exchange bias field of 560 Oe has been found in a valve multilayer with ultra-thin pinned NiFe layers (1 nm), in which a large constant magnetic field of 700 Oe was applied during film deposition procession. The observed results are attributed to the large applied magnetic field, which produced more net spins of the antiferromagnet at the interface. These interfacial uncompensated spins provide the net spin moments required for exchange coupling and bias.     

Improving exchange-coupling field in the same thickness of pinned magnetic layer

A conventional Ta/NiFe/Cu/NiFe/FeMn spin valve was prepared to investigate the exchange bias properties with the variations of deposition field. By enhancing the deposition magnetic fields from 50 to 650 Oe, increase of exchange bias fields at a given thickness of the pinned NiFe layer has been found in the spin valves. In this paper, we show that this increase is due to the change of magnetic moment distribution at the ferromagnetic and antiferromagnetic interface by comparison of measured results with the interfacial uncompensated model. Therefore, by enhancing deposition magnetic fields, a large exchange-coupling field can be achieved in relatively thicker magnetic films for application.     

Magnetoresistance and magnetization studies through a Cu interlayer in spin valves of NiFe/Cu/NiFe/FeMn

The influence of the Cu layer thickness on the magnetic and magnetotransport properties has been investigated in Ta/NiFe/Cu/NiFe/FeMn spin valves. The magnetization and magnetoresistance measurements were carried out for magnetic field applied along the easy-axis direction. A phenomenological model, which assumes formation of a planar domain wall at the anti-ferromagnetic side of the interfaces as well as bilinear coupling between the ferromagnetic layers, was used to derive the anisotropy characteristics and orientation of each NiFe layer magnetization. The anisotropy and spin valve magnetoresistance were simulated numerically and compared with the experiment. It was found that the anisotropy magnetoresistance is negligible and that there is a poor agreement for the spin-valve one, which was attributed to the model (valid for ferromagnetic layers in single-domain state only) used for its calculation. It was found that the increase of the Cu layer thickness provokes a decrease of the interdiffusion between the NiFe and FeMn layers, and, as consequence, changes of the uniaxial anisotropy of the pinned NiFe layer, of the exchange interaction between the pinned NiFe layer and the FeMn ones, as well as of the exchange-bias field of the pinned NiFe layer.     

Interface biquadratic coupling and magnon scattering in exchange-biased ferromagnetic thin films grown on epitaxial FeF2

The magnetic anisotropy of ferromagnetic (FM) Ni, Co, and Fe polycrystalline thin films grown on antiferromagnetic (AF) FeF(2)(110) epitaxial layers was studied, as a function of temperature, using ferromagnetic resonance. In addition to an in-plane anisotropy in the FM induced by fluctuations in the AF short-range order, a perpendicular (biquadratic) magnetic anisotropy, with an out-of-plane component, was found which increased with decreasing temperature above the AF Neél temperature (T(N) = 78.4 K). This is a surprising result given that the AF's uniaxial anisotropy axis was in the plane of the sample, but is consistent with prior experimental and theoretical work. The resonance linewidth had a strong dependence on the direction of the external magnetic field with respect to in-plane FeF(2) crystallographic directions, consistent with interface magnon scattering due to defect-induced demagnetizing fields. Below T(N), the exchange bias field H(E) measured via FMR for the Ni sample was in good agreement with H(E) determined from magnetization measurements if the perpendicular out-of-plane anisotropy was taken into account. A low field resonance line normally observed at H ≈ 0, associated with domain formation during magnetization in ferromagnets, coincided with the exchange bias field for T < T(N), indicating domain formation with the in-plane FM magnetization perpendicular to the AF easy axis. Thus, biquadratic FM-AF coupling is important at temperatures below and above T(N).     

Influence of ferromagnetic layer on the exchange coupling of antiferromagnetic NiO-based films

Strong effects of ferromagnetic layer (FMCo, and Ni₈₀Fe₂₀) on the magnitude and blocking temperature of exchange coupling are observed in antiferromagnetic NiO-based films NiO (5 nm)/FM₁ (t nm)/FM₂ (6-t nm). The existence of interfacial spins configuration in glass-like state and FM anisotropy are proposed to interpret a minimum shown in thermal magnetization curves for films with strong exchange coupling effect. The microstructural change of FM layer and the long-range interaction of exchange bias are taken into account to explain a strong dependence of exchange coupling energy density on the thickness t_F of FM layer when t_F<5 nm.     

A study of the induced anisotropy in a ferromagnetic grain from an exchange coupled antiferromagnetic grain with uniaxial anisotropy

Approximate analytic solutions for the energy of an antiferromagnetic (AF) grain, which experiences an external exchange torque from a ferromagnetic grain have been obtained for a wide range of AF thickness. The accuracy of the analytic expression is within 2.0% of the exact solution, which do not have a closed analytical form. The model predicts that there are two critical AF grain thickness for each particular exchange energy strength. Below the first critical thickness, the induced anisotropy energy is well approximated by an uniaxial anisotropy term. Above the second critical thickness the induced anisotropy is unidirectional. In the intermediate range the induced anisotropy can not be expressed simply as uniaxial or unidirectional. The exchange bias and coercivity in NiFe/IrMn films have been studied as a function of the IrMn thickness, and the results are consistent with the proposed theory.     

Exchange-coupling-induced fourfold magnetic anisotropy in CoFeB/FeRh bilayer grown on SrTiO3(001)

Exchange coupling across the interface between a ferromagnetic (FM) layer and an antiferromagnetic (AFM) or another FM layer may induce a unidirectional magnetic anisotropy and/or a uniaxial magnetic anisotropy, which has been extensively studied due to the important application in magnetic materials and devices. In this work, we observed a fourfold magnetic anisotropy in amorphous CoFeB layer when exchange coupling to an adjacent FeRh layer which is epitaxially grown on an SrTiO₃(001) substrate. As the temperature rises from 300 K to 400 K, FeRh film undergoes a phase transition from AFM to FM phase, the induced fourfold magnetic anisotropy in the CoFeB layer switches the orientation from the FeRh$\langle 110\rangle $ to FeRh$\langle 100\rangle $ directions and the strength is obviously reduced. In addition, the effective magnetic damping as well as the two-magnon scattering of the CoFeB/FeRh bilayer also remarkably increase with the occurrence of magnetic phase transition of FeRh. No exchange bias is observed in the bilayer even when FeRh is in the nominal AFM state, which is probably because the residual FM FeRh moments located at the interface can well separate the exchange coupling between the below pinned FeRh moments and the CoFeB moments.     

Effect of Ta buffer and NiFe seed layers on pulsed-DC magnetron sputtered Ir20Mn80/Co90Fe10 exchange bias

A systematic investigation has been done on the correlation between texture, grain size evolution and magnetic properties in Ta/Ni₈₁Fe₁₉/Ir₂₀Mn₈₀/Co₉₀Fe₁₀/Ta exchange bias in dependence of Ta buffer and NiFe seed layer thickness in the range of 2-10 nm, deposited by pulsed DC magnetron sputtering technique. A strong dependence of 〈1 1 1〉 texture on the Ta/NiFe thicknesses was found, where the reducing and increasing texture was correlated with exchange bias field and unidirectional anisotropy energy constant at both NiFe/IrMn and IrMn/CoFe interfaces. However, a direct correlation between average grain size in IrMn and H_ex and H_c was not observed. L1₂ phase IrMn₃ could be formed by thickness optimization of Ta/NiFe layers by deposition at room temperature, for which the maximum exchange coupling parameters were achieved. We conclude finally that the coercivity is mainly influenced by texture induced interfacial effects at NiFe/IrMn/CoFe interfaces developing with Ta/NiFe thicknesses.     

Exchange bias on epitaxial Ni films due to ultrathin NiO layer

Exchange anisotropy refers to the effect that an antiferromagnetic (AF) layer grown in contact with a ferromagnetic (FM) layer has on the magnetic response of the FM layer. The most notable changes in the FM hysteresis loop due to the surface exchange coupling are a coercivity enhanced over the value typically observed in films grown on a nonmagnetic substrate, and a shift in the hysteresis loop of the ferromagnet away from the zero field axis. A typical observation is that the thickness of the antiferromagnet needs to exceed a critical value before exchange bias is observed. Here we report on the exchange bias properties observed in an epitaxial Ni/NiO system where a thin NiO layer forms spontaneously and is observed after annealing epitaxial Ni films MBE grown on MgO substrates.     

Field sweep rate dynamics in magnetic tunnel junctions

The dynamical behavior of magnetic tunnel junctions (MTJs) was investigated by varying the magnetic field sweep rate from 0.01 mT/s to 10 T/s in a magneto optical Kerr effect set-up. The bias fields of the pinned and free ferromagnetic electrodes were found to drastically decrease above a field sweep rate of 1 T/s. This decrease in the bias fields coincides with a change in the magnetization reversal process from domain wall motion at low-field sweep rates to domain nucleation at high-field sweep rates. The nucleation of inverse domains in the ferromagnetic layer changes the interfacial spin structure of the antiferromagnetic layer and therefore the magnitude of the exchange bias effect. Furthermore, the nucleation of domains induces a discontinuous magnetic charge density at the tunnel barrier interfaces and this reduces the interlayer coupling between the two ferromagnetic electrodes of the MTJ.     

NiFe/FeMn双层膜的交换耦合

采用平面霍尔效应测量方法，对NiFe/FeMn双层膜的交换耦合进行了研究. 结果表明，在NiFe/FeMn体系中不存在spin-flop模型给出的单轴各向异性场. 而导致交换耦合场可逆与不可逆测量结果之间较大差异的原因是反铁磁颗粒的不稳定性或铁磁层的分畴现象. 关键词： 反铁磁/铁磁双层膜 交换偏置场 可逆与不可逆测量     

Flexible tuning microwave permeability spectrum in [ferromagnet/antiferromagnet]_n exchange-biased multilayer stack structure

NiFe/[IrMn/NiFe/IrMn] 5 /[NiFe/IrMn] 4 /NiFe structured exchange-biased multilayer films are designed and prepared by magnetron sputtering. The static and the microwave magnetic properties are systematically investigated. The results reveal that adding a partially pinned ferromagnetic layer can effectively broaden the ferromagnetic resonance linewidth toward the low frequency domain. Moreover, a wideband multi-peak permeability spectrum with a 3.1-GHz linewidth is obtained by overlapping the spectra of different partially pinned ferromagnetic layers and [antiferromagnet/ferromagnet/antiferromagnet] n stacks. Our results show that the linewidth of the sample can be feasibly tuned through controlling the proper exchange bias fields of different stacks. The designed multilayered thin films have potential application for a tunable wideband high frequency noise filter.     

Exchange bias and domain evolution at 10 nm scales

For a fixed 2 μm×2 μm area of a Co/Pt-CoO perpendicular exchange bias system we image the ferromagnetic (FM) domains for various applied fields with 10-nm resolution by magnetic force microscopy (MFM). Using quantitative MFM we measure the local areal density of pinned uncompensated spins (pinUCS) in the antiferromagnetic (AFM) CoO layer and correlate the FM domain structure with the UCS density. Larger applied fields drive the receding domains to areas of proportionally higher pinUCS aligned antiparallel to FM moments. The data confirm that the evolution of the FM domains is determined by the pinUCS in the AFM layer, and also present examples of frustration in the system.     

外应力场下铁磁/反铁磁双层膜系统中的交换偏置

采用自由能极小的方法研究了铁磁/反铁磁双层膜系统在外应力场下的交换各向异性.本模型中铁磁层具有单轴磁晶各向异性和立方磁晶各向异性，而反铁磁层仅具有单轴磁晶各向异性，但其厚度趋于半无穷.理论上解析地给出了系统的等效交换偏置和钉扎角(它显示了反铁磁层对铁磁层磁化的钉扎作用)与外应力场之间的关系.数值计算表明：系统的等效交换偏置与外磁场的方向有关，而与其大小无关；然而外应力场的大小和方向均对系统的等效交换偏置有影响，其根源在于外应力场的大小和方向都影响着钉扎角. 关键词： 铁磁/反铁磁双层膜 交换偏置 钉扎角 应力场     

Bi对自旋阀钉扎场的影响及机理

实验发现将Bi插入自旋阀多层膜TaNiFeCuBi(x)NiFeFeMn中可以显著地提高自旋阀的钉扎场Hex.采用XPS对Cu,Bi元素的分布情况进行了研究,发现Bi的插入明显抑制了Cu原子在自旋阀的制备过程中在NiFeFeMn界面的偏聚.进一步研究表明:自旋阀钉扎层NiFeFeMn界面中,Cu原子的存在是导致自旋阀Hex小于TaNiFeFeMn多层膜Hex的主要原因. 关键词： 自旋阀 钉扎场 交换各向异性 表面活化剂     

Observation of exchange bias and spin-glass-like ordering in ɛ-Fe2.8Cr0.2N nanoparticles

Nanoparticles of ɛ-Fe_2.8Cr_0.2N system exhibit the exchange bias phenomenon due to the exchange coupling of the spins of the antiferromagnetic (AF) oxide/oxynitride surface layer and the ferromagnetic (FM) nitride core. Exchange bias is observed at 10 K both in the absence and presence of cooling field. Due to the interface disorder, a mixture of parallel and anti-parallel/perpendicular coupling of the AF and FM spins is observed. The roughness of AF-FM interface induces disorder due to the random exchange anisotropy. The saturation magnetization is also found to be drastically lowered as compared to parent ɛ-Fe₃N. Below 58 K, the broad peak (T _E ≅ T _f ) in zero-field cooled (ZFC) magnetization curves indicates the presence of unidirectional anisotropy and spinglass-like ordering, that arises from the freezing of localized frustrated spins.      

铁磁/反铁磁双层膜系统中的交换偏置及矫顽场的温度特性

提出了一个讨论铁磁／反铁磁双层膜中的交换偏置及矫顽场温度特性的物理模型，该模型，假设铁磁层为具有单畴各向异性的单畴膜而反铁磁层由许多相互独立具有多晶各向异性的颗粒组成，其温度依赖性主要来源于系统态的热不稳定，包括反铁磁颗粒易轴取向的热涨落和相关磁学量的温度依赖性等。计算结果表明其交换偏置随温度的增加非线性地减少而其矫顽场在体阻截温度处达极大值，且其体阻截温度随反铁磁颗粒粒径的增加而增加。我们的计算结果和相关实验结果一致，通过本的讨论，我们建议通过铁磁膜耦合上大粒径硬反铁磁颗粒膜可获得高交换偏置、低矫顽场且近独立于温度的相关磁学器件。     

Parallel versus antiparallel interfacial coupling in exchange biased Co/FeF2

By using the surface and element specificity of soft x-ray magnetic dichroism we provide direct experimental evidence for two different types of interfacial uncompensated Fe moments in exchange biased Co/FeF2 bilayers. Some moments are pinned and coupled antiparallel to the ferromagnet (FM). They give rise to a positive exchange bias and vanish above T(N) = 78 together with the antiferromagnet (AF) order. Other interfacial Fe moments are unpinned and coupled parallel to the FM. They persist up to 300 K and give rise to magnetic order at the AF surface even above T(N) .     

Out-of-plane exchange bias and magnetic anisotropy in MnPd/Co multilayers

Magnetic and structural properties in [MnPd/Co]₁₀ multilayers deposited onto Si(1 1 1) substrates have been investigated. The dependences of anisotropy and exchange bias on the thicknesses of both MnPd and Co layers have been studied. In most of the samples, the out-of-plane magnetic anisotropy and both large out-of-plane and in-plane exchange biases have been observed at cryogenic temperature below the blocking temperature T_B≈240 K. With appropriate MnPd and Co thicknesses, we have obtained samples with a large out-of-plane exchange bias along with a large out-of-plane magnetic anisotropy. The origin of the out-of-plane magnetic anisotropy in the samples has been suggested to be due to the formation of CoPd interfacial alloys which have tensile in-plane strains, while the spin structure of the antiferromagnetic layer at the interface which is believed to be responsible for exchange bias may be the same as that of the bulk material. Also, the present study shows that the interplay between the out-of-plane magnetic anisotropy and exchange bias is evident in our multilayers and plays an important role in the out-of-plane exchange-bias mechanism.     

Modeling of magnetization processes in exchange coupled fluoride bilayers

The angular dependence of the hysteresis loops of ferromagnetic/antiferromagnetic (FM/AF) bilayer with a compensated interface is investigated by means of numerical simulation for a perfect single-crystalline AF layer having no AF domains at the FM/AF interface, as well as for a twinned AF layer. For applied magnetic field direction nearly parallel to the AF easy axis the completely reversible loops with finite exchange bias field have been obtained for the uniform case, while a large exchange bias has been found for the twinned case, in agreement with experimental results.