Photodielectric effect and “Configuration” modes of bistable centers in the CdF<Subscript>2</Subscript>: Ga crystal

A photoinduced increase in the real (?′) and imaginary (?″) parts of the permittivity (Δ?′ ≈ 0.23 and Δ?″ ≈ 0.10 at a frequency of 15 cm^?1) is revealed experimentally. This photodielectric effect is adequately described by the predicted configuration modes at the frequencies gv ₁ = 354 cm^?1 and gv ₂ = 123 cm^?1, which correspond to the potential-energy curves previously calculated for deep and shallow impurity states in CdF₂: Ga crystals. The dielectric contributions of these modes are determined, and the corresponding concentrations of Ga ions in deep (N ₁) and shallow (N ₂) impurity states are calculated. It is found that, unlike the CdF₂: In crystals, the changes in the quantities ?′ and ?″ before and after illumination of the CdF₂: Ga crystals are predominantly determined by the change in the contribution from the configuration mode of the shallow state, because the contribution from the configuration mode of the deep state is very small. A photoinduced decrease in the lattice reflection in the CdF₂: Ga crystals due to the change in the dielectric contribution from the impurity mode of the lattice is predicted.     

Reversible permittivity of a photosensitive relaxor ferroelectric

The reversible permittivity of barium strontium niobate, a photosensitive relaxor ferroelectric, doped with lanthanum and cerium is investigated in the dark and under illumination with a power density of 0.22 mW/cm². The permittivity is measured under a combined effect of a weak ac electric field at a frequency of 1 MHz and a slowly varying periodic field E _b with an amplitude of ±2.3 kV/cm. It is shown that the illumination significantly increases the permittivity, changes the dependence of the permittivity on the periodic field E _b , and eliminates the possible unipolarity of the crystal, thus significantly improving the reproducibility of the permittivity during repeated measurements.     

Photoinduced permittivity in lead molybdate

The effect of illumination on the dielectric properties of lead molybdate (PbMoO₄) single crystals was studied. Illumination with intrinsic light gives rise to a substantial enhancement of low-frequency permittivity (the photodielectric effect, PDE). The PDE is dependent on temperature and reaches a maximum near 400 K. The permittivity reaches the steady state a long time after the light is turned on (off). The relaxation time and activation energy of the process were determined. The relation of the PDE to the photoconductivity of the crystal is discussed. A possible mechanism of the PDE in PbMoO₄ crystals is proposed.     

Photodielectric effect in TlInS<Subscript>2</Subscript> activated by the La impurity

The influence of light on the low-frequency dielectric properties of the TlInS₂ layered crystal is investigated for the first time. It is established that the illumination of the crystal during measurements leads to a substantial change in the behavior of the temperature dependence of the permittivity ɛ of the TlInS₂ compound doped with the lanthanum impurity in the range of the existence of the incommensurate phase. The temperature dependences of the permittivity ε of the TlInS₂ compound doped with the lanthanum impurity after preliminary cooling of the crystal in constant electric fields with different strengths are studied for the first time. The inference is made that the experimentally observed photodielectric effect is associated with the localization of charge carriers at defect levels in the band gap of the crystal with the formation of local polarized states.     

Gd0.55Sr0.45MnO3薄膜光诱导电阻变化特性研究

分别采用固相反应和脉冲激光沉积的方法制备了电荷-轨道有序态锰氧化物Gd_0.55Sr_0.45MnO₃块材和多晶薄膜, 研究了薄膜在光诱导作用下的电阻变化特性. 实验结果表明该薄膜在整个测量温度范围内表现出了半导体型导电特性. 利用变程跳跃模型拟合电阻温度关系可知, 其电荷有序态转变温度为70 K. 激光作用致使薄膜电阻减小, 当激光功率度为40 mW/mm²时, 最大光致电阻相对变化值可达99.8%, 且在8 s的时间内达到了平衡态, 温度对其影响很小; 当激光功率度为6 mW/mm²时, 获得的最大光致电阻相对变化值为44%, 而且时间常数随温度的升高而增大, 这主要是由于光诱导和热扰动共同作用的结果.     

Der photodielektrische Effekt in CdS-Einkristallen

Measurements of the photodielectric effect in CdS-crystals at frequencies between 50 Hz and 300 kHz, temperatures between 300°K and 78°K and excitation with 577 nm resulted in a sixfold increased permittivity if the excitation density reached a value of 66 μW/cm². This increase of capacity can be understood as due to an increase in conductivity if an equivalent circuit of the crystal with four elements — two capacities and two photoresistors — is supposed. The observed variations of the time constant in the frequency response of the permittivity can be explained by variations of the data in the many-layer-system of the crystal. Measurements of the temperature dependence and decay of the photodielectric effect are further arguments for our model and against a true dielectric change.     

Quasi-static loops of the dielectric hysteresis for a photosensitive relaxor ferroelectric crystal in the temperature range of the diffuse phase transition

This paper reports on the results of an investigation into the dielectric hysteresis loops of La-and Ce-doped barium strontium niobate, a photosensitive relaxor ferroelectric, both in the dark and under illumination with an intensity of 0.22 mW/cm². Measurements are performed in a quasi-static electric field at a frequency of 5 × 10^?4 Hz for different temperatures in the range of the diffuse phase transition. Illumination increases the hysteresis loop amplitude. The amplitude and the coercive field decrease under heating, and the difference between the loops measured for illuminated and unilluminated crystals disappears gradually as the temperature of the maximum in the permittivity is approached. The experimental results are not in conflict with the assumption that random internal relaxor fields are screened by photoinduced carriers.     

Narrowband ultraviolet photodetector based on MgZnO and NPB heterojunction

An ultraviolet photodetector was fabricated based on Mg_0.07Zn_0.93O heterojunction. N, N'-bis (naphthalen-1-y1)-N, N'-bis(pheny) benzidine was selected as the hole transporting layer. I-V characteristic curves of the device were measured in the dark and under the illumination of 340?nm UV light with density of 1.33 mW/cm². The device showed a low dark current of about 3×10^-10 A and a high photo-dark current ratio of 1×10⁵ at -2 V bias. A narrowband photoresponse was observed from 300 to 400?nm and centered at 340?nm with a full width at half-maximum of only 30?nm. The maximum peak response is at 340?nm, which is 0.192 A/W at the bias of -1 V.     

Photodielectric effect in polycrystalline layers of Pb3O4

The results of the investigation into the influence of light excitation on the dielectric characteristics of polycrystalline layers of lead orthoplumbate Pb₃O₄ are reported. The temperature dependences of the photoelectric response of the studied samples in the frequency range 10²–10⁵ Hz are presented. The parameters and activation energy of dielectric relaxation are determined. The manifestation of the photodielectric effect is interpreted in terms of the formation of a space charge in the bulk of the semiconductor. The role of electrons of the lone pair belonging to the Pb²⁺ cations in the processes under investigation is discussed.     

Light-Induced Polaronic Absorption at Low Temperature in Pure and (Fe,Ce, Cr) Doped SrxBa1-xNb2O6 or Ba1-yCayTiO3 Crystals and Photodissociation of Vis Centers Into Small Polarons

Congruent SBN and BCT crystals doped with Fe, Cr, Ce to enhance photorefractive properties, are investigated at low temperature (T > 1 K) under illumination with Ar^?- and Kr^?-laser light. Light-induced absorption changes in a wide spectral range from UV to IR indicate photoinduced charge transfer processes from impurities to polaronic centers. Broad NIR absorptions (at about 0,7 eV) associated with Ti^3? polarons in BCT or with Nb^4? polarons in SBN are observed and their non-linear behaviour with illumination intensity, polarization and temperature is described on the basis of the simple model for the photo charge transport (in SBN: Ce^3?? Nb^5??Ce^4??Nb^4?). A broad visible absorption VIS (at about 2 eV) appearing together with the NIR polarons, is shown by photodissociation (with a Kr^?-laser) to consist at least partly of small polarons (in BCT and SBN).     

Dielectric properties of [(CH3)2NH2]3CuCl5 crystal in external electric field

Dielectric properties of [(CH₃)₂NH₂]₃CuCl₅ under the influence of external electric field was studied. At constant values of electric field intensity, the characteristic temperatures T _m and T _c are distinguished, where the maximum value of permittivity and the jump-like decrease of permittivity are observed, respectively. The splitting of the transition is connected with the presence of a defect density wave. Observed in the sinusoidal field, the hysteretic behaviour of permittivity is connected with the slow transition to the ferroelectric phase and the coexistence of the phases in the range (T _m–T _c). The experimentally observed behaviour was explained qualitatively using the Holakovský–Dvo?ák theoretical model.     

Low frequency dielectric permittivity of quasi-one-dimensional conductor (TMTTF)2Br

Conductivity and permittivity of the organic transfer salt (TMTTF)₂Br have been measured at low frequencies (10²-10⁷ Hz) between room temperature down to 4 K. The real part of the permittivity, , is shown to grow below the temperature at which the conductivity is maximum due to charge localization of Mott-Hubbard type. reaches a maximum of 10⁵-10⁶ at 35 K-50 K depending on the samples. Decreasing temperature below , sharply decreases down to helium temperature through the antiferromagnetic phase transition at T _N = 15 K. We explain the magnitude, the temperature and frequency dependence of as resulting from short range charge density wave states in the temperature range where charge localization occurs. This interpretation is supported by recent X-ray scattering measurements. Received: 10 October 1997 / Revised: 28 February 1998 / Accepted: 3 March 1998     

Study on the properties and charge generation in dye-sensitized n-TiO2|dye|p-CuI solid state photovoltaic solar cells

Transparent semiconducting copper iodide (CuI) films were prepared by XeCl Excimer laser and their characteristics are investigated. These films exhibited optical transmittance over 80% in the wavelength range from 400 to 900 nm and minimum resistivity of about 2 kΩ cm⁻¹. The optical absorption of the these films shows a remarkable blue shift compared to that of polycrystalline of CuI, which can be explained from the viewpoint formation of ultra fine of CuI grains. The titanium dioxide (TiO₂) films have been prepared by sol-gel method. The properties of pulsed laser deposited CuI and TiO₂ films in power output of n-TiO₂|dye|p-CuI cells is studied. An efficient charge generation is observed through the illumination of TiO₂ layer of the fabricated n-TiO₂|dye|p-CuI solid state photovoltaic solar cells. From the current-voltage characteristics, the fill factor and power conversion efficiency were about of 45 and 3%, respectively. The maximum photo-current of about 12.5 mA/cm² and photo-voltage of 475 mV under AM 1.5 conditions were obtained for the n-TiO₂|dye|p-CuI solid states photovoltaic solar cells with good reproducibility. Adsorbed dye molecules to the TiO₂ surface act as a relay, especially under illumination through TiO₂ layer in the wave range region of 300-400 nm.     

Effect of Illumination of Organic Dielectrics by Radiation of an Active Medium

The effect of illumination of 16 organic dielectrics, including PMMA and polyethylene- and polyvinylchloride-based materials, on their electrical conductivity, permittivity, and tangent of the loss angle is examined. Light pulses of 20 ns duration, mainly with a wavelength of 510.6 nm, formed a large light spot which illuminates the entire sample for 3–5 s so that the light pulse power density at the sample surface reached 0.6–6.6 kW/cm². It has been found that illumination, as a rule, changes the electrical parameters of the dielectrics that relax with time to their initial or new equilibrium values. In the process of many-hour relaxation of some materials, their electrical conductivity reached a maximum. This is indicative of the fact that light radiation converts dielectrics into the electret state.     

Modified relaxor–PbTiO3 piezoelectrics for high temperature applications

In this study, Pb_{1? x} (Yb_1/2Nb_1/2)_0.515Ti_0.485O₃?x{(2SrO?+?BaO)/3} [PYNT–SBx] compositions with x?=?0.00–0.05 at the rhombohedral side near the morphotropic phase boundary were investigated. The SB substitution for Pb²⁺ in PYNT was found to increase the tetragonality, but greatly reduce the Curie temperature (T_c ) and broaden the dielectric permittivity maximum. The temperature dependence of the relative permittivity follows a Curie–Weiss law above the deviation temperature (T_D ) at high temperatures for the SB-doped PYNT. The optimized properties with a piezoelectric coefficient of 610?pm?V^?1, maximum dielectric constant (ε _max) of 25,000 (at the T_c ?=?315°C and 1?kHz), and a remnant polarization (P_r ) of 33?µC?cm^?2 were obtained in PYNT–SB0.04 ceramics.     

Photocurrent analysis of organic photovoltaic cells based on CuPc/C60 with Alq3 as a buffer layer

The performance of an organic photovoltaic(OPV) cell based on copper phthalocyanine CuPc/C60 with a tris(8-hydroxyquinolinato) aluminum(Alq3) buffer layer has been investigated.It was found that the power conversion efficiency of the device was 1.51% under illumination with an intensity of 100 mW/cm2,which was limited by a squareroot dependence of the photocurrent on voltage.The photocurrent-optical power density characteristics showed that the OPV cell had a significant space-charge limited photocurrent with a varied saturation voltage and a three quarters power dependence on optical power density.Also,the absorption spectrum was measured by a spectrophotometer,and the results showed that the additional Alq3 layer has a minor effect on photocurrent generation.     

Effect of Ni(II) substitution on phase stabilization electrical properties of BICo(III)VOX.20 oxide-ion conductor

The BICO_0.20–xNI_xVOX solid electrolyte was synthesized by the standard solid-state reaction. The effect of Ni(II) substitution for Co(III) on phase stabilization and oxide-ion performance has been investigated in the compositional range 0?≤?x?≤?0.20 using X-ray powder diffraction, differential thermal analysis and AC impedance spectroscopy. The highly conductive γ′-phase was effectively stabilized at room temperature for compositions with x?≥?0.13 whose thermal stability increases with Ni content. The complex plane plots of impedance were typically represented at temperatures below 380?°C, suggesting a major contribution of polycrystalline grains to the overall electrical conductivity. The dielectric permittivity measurements revealed the fact that suppression of the ferroelectric transition is compositionally dependent. Interestingly, the maximum ionic conductivity at lower temperatures (~2.56?×?10^?4?S^?cm^?1 at 300?°C) was observed for the composition with x?=?0.13. The variation of low-temperature conductivity with Ni content was accompanied with a general drop in the corresponding values of ΔE_LT. However, the local minimum high-temperature conductivity, σ₆₀₀?°C?~?2.26?×?10^?2?S^?cm^?1 for x?=?0.10, coupled with a local maximum value of ΔE_HT?~?0.48?eV was attributed to an increased defect trapping effect correlated with the V(V)?→?V(IV) reduction at elevated temperatures.     

Effect of variation of different nanofillers on structural,electrical, dielectric,and transport properties of blend polymer nanocomposites

In the present work, the effect of various nanofillers with different particle sizes and dielectric constants (BaTiO₃, CeO₂, Er₂O₃, or TiO₂) on blend solid polymer electrolyte comprising PEO and PVC complexed with bulky LiPF₆ has been explored. The XRD analysis confirms the polymer nanocomposite formation. FTIR provides evidence of interaction among the functional groups of the polymer with the ions and the nanofiller in terms of shifting and change of the peak profile. The highest ionic conductivity is ~?2.3?×?10^?5 S cm^?1 with a wide electrochemical stability window of ~?3.5 V for 10 wt% Er₂O₃. The real and imaginary parts of dielectric permittivity follow the identical trend of the decreasing value of dielectric permittivity and dielectric loss with increase in the frequency. The particle size and the dielectric constant show an abnormal trend with different nanofillers. The AC conductivity follows the universal Jonscher power law, and an effective mechanism has been proposed to understand the nanofiller interaction with cation coordinated polymer.     

Investigation of photoinduced scattering in LiNbO3 crystals

A photoinduced scattering effect in LiNbO₃:Fe crystals was investigated in detail. The scattering depends substantially on illumination geometry, light beam profile, doping degree, and appears under coherent illumination only. It was shown that besides the photoinduced scattering a bleaching effect is possible. It consists in the fact that after the stage of low-scale inhomogeneity formation there occurs their effective erasure. The conditions were found out under which the bleaching effect can be observed.     

Investigation into the effects of deposition parameters on TiO2 photocatalyst thin films by rf magnetron sputtering

Titanium dioxide (TiO₂) photocatalyst thin films were deposited on non-alkali glass substrates by radio frequency (rf) magnetron sputtering. The Taguchi method with orthogonal array, signal-to-noise ratio and analysis of variance were employed to study the performance characteristics. The experimental studies were conducted under different rf powers, sputtering pressures, O₂/(Ar+O₂) flow-rate ratios, and substrate temperatures. The deposited TiO₂ films were of the anatase phase with a (101) preferred orientation. We performed both photoinduced decomposition of methylene blue (MB) and photoinduced hydrophilicity under UV light illumination. With the optimized TiO₂ photocatalyst thin film deposition conditions, the water contact angle after 9 min UV illumination was approximately 5, the absorbance of MB was reduced to 0.2 for 240 min UV irradiation, and the deposition rate was 34.18 Å/min.