Luminescence induced in diamond by He+ ion implantation into SiC/C composites with an inverse opal structure

The photoluminescence induced in diamond by helium ion implantation into SiC/C nanocomposite samples and their structure revealed by high-resolution transmission electron microscopy have been investigated. It has been found that, apart from crystallites of silicon carbide, graphite, and amorphous carbon, in the structure of the composites there are spherical carbon particles containing concentric graphite-like shells (onion-like particles). It has been established that onion-like particles are formed during high-temperature treatment of SiC/C nanocomposites in the course of their preparation. It has been shown that, after the implantation with the subsequent thermal treatment, nanocomposite samples exhibit a luminescence characteristic of N-V centers in diamonds. The assumption has been made that the diamond crystallites are formed at the center of onion-like particles during high-temperature treatment of the composite.     

强流脉冲电子束作用下金属纯Cu的微观结构状态——空位簇缺陷及表面微孔结构

利用强流脉冲(HCPEB)电子束技术对多晶纯Cu进行了辐照处理,并利用透射电镜对HCPEB诱发的空位簇缺陷进行了表征.实验结果表明,HCPEP辐照金属可在纯Cu表层诱发大量的过饱和空位,并形成四方形空位胞及空位型位错圈和堆垛层错四面体(SFT),HCPEB瞬间的加热和冷却诱发的幅值极大的应力和极高的应变导致的整个原子平面的位移是空位簇缺陷形成的主要原因.此外,扫描电镜分析表明HCPEB辐照可以在纯Cu表面形成高密度、弥散分布和尺寸细小的微孔.过饱和空位或空位团簇沿晶体缺陷向表面扩散、凝聚是表面微孔形成的根     

高压退火对碳纳米管微结构转变的影响

利用高分辨电子显微镜研究了在高压退火条件下碳纳米管的微结构变化规律，发现在5.5GPa下，770℃退火后即发生了明显的结构改变；在950℃退火25min后发现形成了类碳纳米洋葱和纳米碳条带结构.碳纳米管转变成类碳纳米洋葱可以分成几个步骤，首先碳纳米管破裂，然后形成碳纳米球，最后形成类碳纳米洋葱结构.讨论了高压和退火温度对碳纳米管结构变化的影响. 关键词：     

强流脉冲电子束辐照诱发纯钼表面的损伤效应及结构缺陷

利用强流脉冲电子束（HCPEB）装置对纯钼表面进行辐照处理,并利用X射线衍射仪,扫描电子显微镜（SEM）、透射电子显微镜（TEM）详细分析了辐照表面的微观结构和损伤效应. 1次HCPEB辐照后,纯钼表层积聚了极大的残余应力,多次辐照后表面未融化区域出现大量绝热剪切带,且局部区域发生开裂. 微观结构分析显示,辐照后材料表面形成发散状的位错组态和大量空位簇缺陷;绝热剪切带内部是尺寸为1 μm 左右等轴状的再结晶晶粒. 剪切带造成的材料表面局部软化以及间隙原子偏聚于晶界是材料发生开裂的主要原因. 另外,表面熔化区域可形成尺寸为20 nm左右的纳米晶. 关键词： 强流脉冲电子束 纯钼 绝热剪切带 空位簇缺陷     

γ射线辐照下多壁碳纳米管结构转变过程研究

采用60Coγ射线辐照纯净的多壁碳纳米管,用高分辨透射电镜和拉曼光谱,研究了多壁碳纳米管由石墨结构向无定形结构转变的演化过程.发现在γ射线辐照下,碳纳米管的外部石墨层逐渐失去最初的有序结构而向无定形结构转变.而且,随着γ射线辐照剂量的增加,无定形结构不断推进,而石墨层结构则不断减小,直至使整个碳纳米管变为一个中空的无定形纳米线结构.用原子位移理论和溅射机理对这种转变过程进行了分析.γ射线轰击碳纳米管击出碳原子,碳原子停留在晶格的间隙位置上产生间隙原子,在它原来的平衡位置则留下一个空位.当轰击粒子动能足够大时导致碰撞级联效应,无序结构增加.多数空位和间隙原子可能相互复合而彼此退火,但仍有少数原子作为间隙原子而造成晶格进一步缺陷.辐射也可以引起碳原子的溅射,溅射出来的碳原子沉积在碳纳米管的外壁上形成一层无定形碳结构.     

Influence of oxygen on the growth of carbon nanotubes by the SiC surface decomposition method

The influence of oxygen on the development of carbon nanotubes (CNTs) during the annealing process of the surface decomposition method on SiC(000−1) surfaces was investigated. In the case of annealing a SiC substrate under ultra-high vacuum conditions, carbon nanofibers (CNFs) form between the CNT layer and the substrate. However, CNTs form without CNFs by annealing the substrate in an oxygen atmosphere. The mean length of CNTs is longer than those formed without an oxygen atmosphere. From cross-sectional transmission electron microscopy images, it was found that oxygen plays an important role in CNT growth by the surface composition method.     

Metal atom catalyzed enlargement of fullerenes

A metal catalyzed enlargement of fullerenes has been demonstrated by in situ high-resolution transmission electron microscopy. It was found that carbon atoms and clusters can be continuously incorporated into a closed fullerene cage at a high temperature, leading to an increase in the diameter and consequently the formation of giant fullerene with the assist of adsorbed metal atoms. Density functional theoretical simulations indeed suggest that the activation energy for the carbon incorporation and the associated Stone-Wales transformation can be substantially reduced due to the presence of metal atoms, which should be of key importance for the fullerene growth.     

Fabrication of aligned carbon nanotubes on Cu catalyst by dc plasma-enhanced catalytic decomposition

Aligned multi-walled carbon nanotubes (ACNTs) are deposited using copper (Cu) catalyst on Chromium (Cr)-coated substrate by plasma-enhanced chemical vapor deposition at temperature of 700 °C. Acetylene gas has been used as the carbon source while ammonia is used for diluting and etching. The thicknesses of Cu films on Cr-coated Si (100) substrates are controlled by deposition time of magnetron sputtering. The growth behaviors and quality of ACNTs are investigated by scanning electron microscopy (SEM) and transmission electron microscopy. The different performance of ACNTs on various Cu films is explained by referring to the graphitic order as detected by Raman spectroscopy. The results indicate that the ACNTs are formed in tip-growth model where Cu is used as a novel catalyst, and the thickness of Cu films is responsible to the diameter and quality of synthesized CNTs.     

Nanoparticle ejection from Au induced by single Xe ion impacts

In situ transmission electron microscopy has been used to observe sputtered Au during Xe ion irradiation in transmission geometry. The sputtered Au was collected on an electron transparent carbon foil. Nanoparticles were observed on the collector foil after they were ejected by single ion impacts. The ejection is from the melt zone formed during the thermal spike phase of a displacement cascade produced near the surface by a single ion impact. Such single ion impacts are also capable of producing craters. Ejected nanoparticles can make a significant contribution to sputtering.     

强流脉冲电子束作用下金属纯Cu的微观结构状态——变形结构

为了研究金属的超快变形机理,利用强流脉冲电子束(HCPEB)技术对多晶纯Cu进行了辐照处理,并利用透射电子显微镜对HCPEB诱发的表面微结构进行了表征.实验结果表明,HCPEB轰击多晶纯Cu后,在轰击表层诱发了幅值极大的应力和极高的应变速率.1次HCPEB轰击材料表层的变形结构以交滑移形成的位错胞和位错缠结结构为主;多次轰击后平行的位错墙和孪晶是该区域的主要变形结构特征;原子面的扩散乃至位错攀移可在晶界和孪晶界上形成台阶结构.根据各自区域的变形结构特征,对相应的变形机理进行了探讨. 关键词： 强流脉冲电子束 多晶Cu 变形结构 孪晶     

Structural properties of GaAs nanostructures formed by a supply of intense As4 flux in droplet epitaxy

We investigated detailed structural properties of GaAs nanostructures formed by a supply of intense As₄ flux to Ga droplets. Scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (TEM) revealed that whisker-like nanostructures had formed on the truncated cone-shaped bases after crystallization. Moreover, electron energy loss spectroscopy in scanning transmission electron microscopy (STEM-EELS) revealed that elemental Ga atoms remained inside the nanostructures while outside, some had crystallized into GaAs. These findings suggest that crystallization started at the edges of the droplets and the GaAs grew upward along the periphery of the droplets until the droplets were completely covered with crystallized GaAs.     

Growth of multi-walled CNTs emitters on an oxygen-free copper substrate by chemical-vapor deposition

Field emission properties of carbon nanotubes directly grown on a well-polished oxygen-free copper substrate by chemical-vapor deposition (CVD) were studied. Ni was sputtered on the copper substrate as catalyst, and the reactant gas was acetylene. From scanning electron microscopic and transmission electron microscopic images, the as-grown carbon nanotubes are seen to be bamboo structure with branches. Efficient field emission of CNTs is measured by a diode configuration, and the maximum current is 4.8 mA corresponding to a low electric field of 6.7 V/μm (the emission area is about 3.14 mm²). The diffusion between nickel and copper substrate is found to cause the loss of catalyst based on X-ray diffraction pattern of the surface of the substrate.     

Polyhedral carbon nanoparticles at high pressures

The solid-phase transformations of polyhedral nanoparticles at a pressure of 8.0 GPa and various temperatures have been investigated by X-ray diffraction, small-angle X-ray scattering, and transmission electron microscopy. It has been found that the graphene layers of the inner cavities of polyhedral particles are transformed into onion-like structures at temperatures above ～1000°C. This transformation gives rise to the formation of hybrid-type sp2 carbon nanoparticles, which combine the outer polyhedral shape with the quasispherical onion-like core. Polyhedral nanoparticles smaller than ～40 nm are completely transformed into onion-like particles at 1600°C.     

Synthesis of silicon carbide films by combined implantation with sputtering techniques

Silicon carbide (SiC) films were synthesized by combined metal vapor vacuum arc (MEVVA) ion implantation with ion beam assisted deposition (IBAD) techniques. Carbon ions with 40 keV energy were implanted into Si(1 0 0) substrates at ion fluence of 5 × 10¹⁶ ions/cm². Then silicon and carbon atoms were co-sputtered on the Si(1 0 0) substrate surface, at the same time the samples underwent assistant Ar-ion irradiation at 20 keV energy. A group of samples with substrate temperatures ranging from 400 to 600 °C were used to analyze the effect of temperature on formation of the SiC film. Influence of the assistant Ar-ion irradiation was also investigated. The structure, morphology and mechanical properties of the deposited films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and nanoindentation, respectively. The bond configurations were obtained from IR absorption and Raman spectroscopy. The experimental results indicate that microcrystalline SiC films were synthesized at 600 °C. The substrate temperature and assistant Ar-ion irradiation played a key role in the process. The assistant Ar-ion irradiation also helps increasing the nanohardness and bulk modulus of the SiC films. The best values of nanohardness and bulk modulus were 24.1 and 282.6 GPa, respectively.     

Novel room temperature ionic liquids of hexaalkyl substituted guanidinium salts for dye-sensitized solar cells

Nanoparticles are attracting increasing interest because of their high potential for a great number of practical applications, such as optical and electronic devices, nanoscale storage, and delivery systems. Using Cu-phthalocyanine as precursor material, we have synthesized multi-shell graphitic carbon nanospheres without and with metal encapsulation, depending on the pyrolysis conditions. The encapsulated elemental copper nanocrystals achieved using that route were of the order of 50 nm in size. The particles were characterized in detail by high-resolution transmission electron microscopy (HRTEM) and by energy filtering microscopy (EFTEM). The concentric graphitic carbon shells of the as-grown particles were clearly discernable. After in situ high-temperature annealing, an increase in the degree of order was observed. Under high-voltage electron irradiation and heating, a melting point reduction of the enclosed nanosized copper of more than 200 K could be detected, as compared to the melting point 1083 °C of bulk copper. Time-resolved imaging revealed the displacement of the melting copper by migration through the carbon shells, leaving intact carbon cages with a central hole. At intermediate stages of this process the transformation into a hexagonal morphology of the copper nanocrystals was observed. PACS 61.46.+w; 61.48.+c; 68.37.Lp     

Electroless plating of copper on surface-modified glass substrate

This work focuses on developing a novel convenient method for electroless copper deposition on glass material. This method is relied on the formation of amino (NH₂)-terminated film on the surface of glass substrate, by coating polyethylenimine (PEI) on glass matrix and using epichlorohydrin (ECH) as cross-linking agent. The introduced amino groups can effectively adsorb the palladium, the catalysts which could initiate the subsequent Cu electroless plating, onto the glass substrate surface. Finally, a copper film is formed on the palladium-activated glass substrate through copper electroless plating and the surface-coppered glass material is therefore acquired. X-ray diffraction (XRD), atomic force microscope (AFM), scanning electron microscopy (SEM) images combined with energy diffraction X-ray (EDX) analysis demonstrate the successful copper deposition on the surface of glass substrate.     

The generation,detection and measurement of laser-induced carbon plasma ions and their implantation effects on brass substrate

The generation, detection and measurement of laser-induced carbon plasma ions and their implantation effects on brass substrate have been investigated. Thomson parabola technique was employed to measure the energy and flux of carbon ions. The magnetic field of strength 80?mT was applied on the graphite plasma plume to provide an appropriate trajectory to the generated ions. The energy of carbon ions is 678?KeV for laser fluence of 5.1?J/cm² which was kept constant for all exposures. The flux of ions varies from 32?×?10¹¹ to 72?×?10¹⁴?ions/cm² for varying numbers of laser pulses from 3000 to 12,000. In order to explore the ion irradiation effects on brass, four brass substrates were irradiated by carbon ions of different flux. Scanning electron microscope (SEM) and X-ray diffractometer (XRD) are used to analyze the surface morphology and crystallographic structure of ion-implanted brass, respectively. SEM analysis reveals the formation and growth of nano-/micro-sized cavities, pores and pits for the various ion flux for varying numbers of laser pulses from 3000 to 12,000. By increasing ion flux by increasing the number of pulses up to 9000 shots, the dendritic structures initiate to grow along with cavities and pores. At the maximum ion flux for 12,000 shots, the unequiaxed dendritic structures become distinct and the distance between the dendrites is decreased, whereas cavities, pores and pits are completely finished. The XRD analysis reveals that a new phase of ZnC (0012) is formed in the brass substrate after ion implantation. Universal tensile testing machine and Vickers microhardness tester are used to explore the yield stress, ultimate tensile strength and microhardness of ion-implanted brass substrate. The mechanical properties monotonically increase by increasing the ion flux. Variations in mechanical properties are correlated with surface and structural modifications of brass.     

Effect of Pt and Fe catalysts in the transformation of carbon black into carbon nanotubes

In this research carbon nanotubes and carbon nano onion-like structures were synthesized from carbon black using metal catalysts at 400 °C and 700 °C. Platinum and iron-group metals were used as catalysts for the transformation of CB into graphitized nanocarbon and the effect of both metals was compared. The synthesized products were characterized using X-ray diffraction (XRD), transmission electron microscope (TEM), high resolution transmission electron microscope (HRTEM) and Raman spectroscopy. The characterization shows that this process is very efficient in the synthesis of high quality graphitized products from amorphous carbon black, even though the process temperature was relatively low in comparison with previous studies. Distinguished graphitic walls of the newly formed carbon nanostructures were clearly visible in the HRTEM images. Possible growth difference related to the type of catalyst used is briefly explained with the basis of electron vacancies in d-orbitals of metals.     

Formation of copper islands on a native SiO2 surface at elevated temperatures

A combination of in situ X-ray photoelectron spectroscopy analysis and ex situ scanning electron- and atomic force microscopy has been used to study the formation of copper islands upon Cu deposition at elevated temperatures as a basis for the guided growth of copper islands. Two different temperature regions have been found: (I) up to 250 °C only close packed islands are formed due to low diffusion length of copper atoms on the surface. The SiO₂ film acts as a barrier protecting the silicon substrate from diffusion of Cu atoms from oxide surface. (II) The deposition at temperatures above 300 °C leads to the formation of separate islands which are (primarily at higher temperatures) crystalline. At these temperatures, copper atoms diffuse through the SiO₂ layer. However, they are not entirely dissolved in the bulk but a fraction of them forms a Cu rich layer in the vicinity of SiO₂/Si interface. The high copper concentration in this layer lowers the concentration gradient between the surface and the substrate and, consequently, inhibits the diffusion of Cu atoms into the substrate. Hence, the Cu islands remain on the surface even at temperatures as high as 450 °C.     

Selective growth of carbon nantoubes on SiO2/Si substrate

Three-step raising temperature process was employed to fabricate carbon nanotubes by pyrolysis of ferrocene/melamine mixtures on silica and single crystalline silicon wafers respectively. Then the morphologies, structures and compositions of obtained carbon nanotubes are investigated by scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscope (EDX) and electron energy-loss spectroscopy (EELS). TEM and SEM observation shows that on silica substrate, high-oriented carbon nanotube can grow compactly to form continuous film on both frontal and cross-section surfaces, but on silicon substrate, only can form on cross-section surface. These carbon nanotubes have much irregular cup-like structure, and with outer diameter varying from 25 nm to 35 nm. At the top end of carbon nanotube there is a catalyst particle. EDX analysis reveals that the particle are iron cluster, and EELS spectrum indicates that the nanotube is composed of pure carbon. Finally, the effect of substrate surface roughness on the growth behavior of carbon nanotubes has been discussed.