SnO2 / In2O3 one-dimensional nano-core-shell structures: Synthesis, characterization and photoluminescence properties

SnO₂/In₂O₃ one-dimensional nano-core-shell structures have been synthesized at 1350 ^°C by thermal evaporation of the mixture of metal Sn, Fe(NO₃)₃ powders and In particles. The as-synthesized products have been characterized by energy-dispersive X-ray spectroscopy, selected-area electron diffraction and high-resolution transmission electron microscopy. Microstructure characterization indicates the orientation relationship between core and shell is , . The formation mechanism of this nano-core-shell structure can be attributed to the cover of In₂O₃ on the surface of SnO₂ nanochains. The photoluminescence properties of the nano-core-shell structures have been measured. The PL spectrum shows some difference with the result from pure SnO₂ and In₂O₃ nanostructure that be deemed to relate to interface defects in SnO₂/In₂O₃ nano-core-shell structure.     

Highly enhanced photoluminescence and X-ray excited luminescence of Li doped Gd2O3:Eu thin films

Transparent Li-doped Gd₂O₃:Eu³⁺ thin-film phosphors were prepared by a modified sol-gel method. The effect of the Li⁺ ions on luminescent properties of the thin film was investigated. The results indicated that incorporation of Li⁺ ions into Gd₂O₃ lattice could result in a remarkable increase on photoluminescence or X-ray excited luminescence, and the strongest emission was observed from Gd_1.84Li_0.08Eu_0.08O_3−δ film, in which the intensity was increased by a factor of 1.9 or 2.3 in comparison with that of Gd_1.92Eu_0.08O₃ film. And it could be achieved the highest intensity for sintering the Gd_1.84Li_0.08Eu_0.08O_3−δ film at 700 °C. Such a temperature is much lower than the typical solid-state reaction temperature for its powder phosphors. This kind of transparent thin-film phosphors may promise for application to micro X-ray imaging system.     

Excitation process and photoluminescence properties of Tb and Eu ions in SnO2 and in SnO2: Porous silicon hosts

Tin oxide (SnO₂)-layers-doped terbium and europium ions are elaborated by the sol-gel method on silicon substrates. After annealing at 500 °C, the transmission electron microscopy revealed a crystallization of tin oxide.The emission properties of rare-earth in SnO₂ are studied systematically against temperature annealing and Tb³⁺ concentration. The PL spectrum is optimal after annealing at 900 °C and the corresponding photoluminescence (PL) decay is nearly exponential, showing that the sample is homogenous and the PL process can be described by two levels system.The concentration effect shows a quenching of the PL intensity for Tb³⁺ concentration above 4%. From the investigation of the decay rate from the ⁷F₅ state within terbium concentration, we show that self-quenching is insured by dipole - dipole interaction. The evolutions of both PL intensity and PL lifetime versus temperature are studied. The PL intensity and PL lifetime are enhanced by deposing SnO₂:Tb³⁺ and SnO₂:Eu³⁺ in porous silicon. We show that an efficient excitation transfer from Si nanocrystallites to RE ions can occur.     

First applicability of ZnGa2O4 : Ge, Li, Mn phosphor for a plasma display panel

The green emission intensity of ZnGa₂O₄:Ge⁴⁺, Li⁺, Mn²⁺ excited by the vacuum ultraviolet line of 147 nm reaches 70% of commercial green Zn₂SiO₄:Mn²⁺. The vacuum ultraviolet excitation spectra consist of four peaks. In a plasma display test bed filled with Ar and Ne plasma discharged by a radio-frequency generator of 13.6 MHz, ZnGa₂O₄:Ge⁴⁺, Li⁺, Mn²⁺ and commercial Zn₂SiO₄:Mn²⁺ phosphor screens show a linear increase in luminance with increasing self bias voltages. Increasing gas pressures cause the luminance to increase. Also, on increasing the self bias voltages and the gas pressures, the current densities of ZnGa₂O₄:Ge⁴⁺, Li⁺, Mn²⁺ phosphor screens are increased; this is the same behavior as that of the commercial phosphor.     

Photoluminescence in amorphous (PbLa)TiO3 thin films deposited on different substrates

Pb_1−XLa_XTiO₃ thin films, (X=0.0; 13 and 0.27 mol%) were prepared by the polymeric precursor method. Thin films were deposited on Pt/Ti/SiO₂/Si (1 1 1), Si (1 0 0) and glass substrates by spin coating, and annealed in the 200-300°C range in an O₂ atmosphere. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used for the microstructural characterization of the thin films. Photoluminescence (PL) at room temperature has been observed in thin films of (PbLa)TiO₃. The films deposited on Pt/Ti/SiO₂/Si substrates present PL intensity greater than those deposited on glass and silicon substrates. The intensity of PL in these thin films was found to be dependent on the thermal treatment and lanthanum molar concentration.     

Sol-gel preparation and photoluminescence property of YBO3:Eu/Tb nanocrystalline thin films

YBO₃:Eu³⁺/Tb³⁺ nanocrystalline thin films were successfully deposited onto quartz glass substrates by Pechini sol-gel dip-coating method, using rare-earth nitrates and boric acid as starting materials. The crystal structure, morphology, chemical composition and photoluminescence property of the films were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) spectroscopy and fluorescence spectrophotometer. The results of XRD, AFM, XPS and FTIR revealed that the films were composed of spherical YBO₃:Eu³⁺/Tb³⁺ nanocrystals with average grain size of 80 nm. The YBO₃:Eu³⁺ film exhibited strong orange emission at 595 nm and red emission at 615 nm, which were, respectively ascribed to the (⁵D₀→⁷F₁) and (⁵D₀→⁷F₂) transitions of Eu³⁺. The YBO₃:Tb³⁺ film showed dominant green emission at 545 nm due to the ⁵D₄-⁷F₅ transition of Tb³⁺.     

Effect of ion nitriding on the crystal structure of 3 mol% Y2O3-doped ZrO2 thin-films prepared by the sol-gel method

We investigated the effect of ion nitriding on the crystal structure of 3 mol% Y₂O₃-doped ZrO₂ (3YSZ) thin-films prepared by the sol-gel method. For this purpose, we used X-ray diffractometry to determine the crystalline phases, the lattice parameters, the crystal sizes, and the lattice microstrains, and glow discharge-optical emission spectroscopy to obtain the depth profiles of the elemental chemical composition. We found that nitrogen atoms substitute oxygen atoms in the 3YSZ crystal, thus leading to the formation of unsaturated-substitutional solid solutions with reduced lattice parameters and Zr_0.94Y_0.06O_1.72N_0.17 stoichiometric formula. We also found that ion nitriding does not affect the grain size, but does generate lattice microstrains due to the increase in point defects in the crystalline lattice.     

Electrical transport properties of thermally evaporated phthalocyanine (H2Pc) thin films

Thin films of H₂Pc of various thicknesses have been deposited onto glass substrates using thermal evaporation technique at room temperature. The dark electrical resistivity measurements were carried out at different temperatures in the range 298-473 K. An estimation of mean free path (l_o) of charge carriers in H₂Pc thin films was attempted. Measurements of thermoelectric power confirm that H₂Pc thin films behave as a p-type semiconductor. The current density-voltage characteristics of Au/H₂Pc/Au at room temperature showed ohmic conduction mechanism at low voltages. At higher voltages the space-charge-limited conduction (SCLC) accompanied by an exponential trap distribution was dominant. The temperature dependence of current density allows the determination of some essential parameters such as the hole mobility (μ_h), the total trap concentration (N_t), the characteristic temperature (T_t) and the trap density P(E).     

The study on microstructure and microwave-absorbing properties of lithium zinc ferrites doped with magnesium and copper

Lithium zinc ferrites doped with magnesium and copper were prepared by means of a combination of sol-gel method and subsequent calcination. The crystalline phase and microstructure of different doped lithium zinc ferrites were measured by X-ray powder diffraction and scanning electronic microscopy analysis. The results indicate that there are no remarkable differences in phase composition between pure lithium zinc ferrite and the as-doped lithium zinc ferrites. The effects of magnesium and copper dopants on microwave absorption in low-frequency region were investigated by the transmission/reflection coaxial line method. It was found from the present work that doping with copper improved microwave-absorbing properties, while doping with magnesium had little effect on microwave absorption of pure lithium zinc ferrite.     

Investigation of thermal annealing effects on microstructural and optical properties of HfO2 thin films

In the present paper, we investigate the effect of thermal annealing on optical and microstructural properties of HfO₂ thin films (from 20 to 190 nm) obtained by plasma ion assisted deposition (PIAD). After deposition, the HfO₂ films were annealed in N₂ ambient for 3 h at 300, 350, 450, 500 and 750 °C. Several characterisation techniques including X-ray reflectometry (XRR), X-ray diffraction (XRD), spectroscopic ellipsometry (SE), UV Raman and FTIR were used for the physical characterisation of the as-deposited and annealed HfO₂ thin films. The results indicate that as-deposited PIAD HfO₂ films are mainly amorphous and a transition to a crystalline phase occurs at a temperature higher than 450 °C depending on the layer thickness. The crystalline grains consist of cubic and monoclinic phases already classified in literature but this work provides the first evidence of amorphous-cubic phase transition at a temperature as low as 500 °C. According to SE, XRR and FTIR results, an increase in the interfacial layer thickness can be observed only for high temperature annealing. The SE results show that the amorphous phase of HfO₂ (in 20 nm thick samples) has an optical bandgap of 5.51 eV. Following its transition to a crystalline phase upon annealing at 750 °C, the optical bandgap increases to 5.85 eV.     

Superhydrophilic stability enhancement of RF co-sputtered TixSi1−xO2 thin films in dark

Ti_xSi_1−xO₂ compound thin-film systems were deposited by reactive RF magnetron co-sputtering technique. The effect of Ti concentration on the hydrophilicity of Ti_xSi_1−xO₂ compound thin films was studied and it was shown that the films with Ti_0.6Si_0.4O₂ composition possess the best hydrophilic property among all the grown samples. Surface ratio and average roughness of the thin films were measured by atomic force microscopy (AFM). Surface chemical states and stoichiometry of the films were determined by X-ray photoelectron spectroscopy (XPS). In addition, XPS revealed that the amount of Ti-O-Si bonds in nanometer depth from the surface of the Ti_0.6Si_0.4O₂ films was the maximum, which resulted in the most stable superhydrophilic property. According to XRD data analysis for the pure TiO₂ films, the polycrystalline anatase phase was formed with an average grain size of about 15 nm. Moreover, amorphous phase was also formed for the Ti_xSi_1−xO₂ compound systems due to presence of silicon in the films. Finally, optical properties of the films such as transmission, reflection and band gap energy were investigated using UV-vis spectrophotometry. It was found that the transmittance of the films was decreased with increasing Ti concentration in the films.     

Effects of cooling rate and post-heat treatment on properties of ZnO thin films deposited by sol-gel method

Sol-gel spin-coated ZnO thin films are cooled with different rates after the pre-heat treatment. Atomic force microscopy (AFM), X-ray diffraction (XRD), Raman, and photoluminescence (PL) were carried out to investigate the effects of the cooling rate during pre-heat treatment on structural and optical properties of the ZnO thin films. The ZnO thin films cooled slowly exhibit mountain chain structure while the ones cooled rapidly have smooth surface. The ZnO thin films cooled rapidly have higher c-axis orientation compared to the ones cooled slowly. The narrower and the higher near-band-edge emission (NBE) peaks are observed in the ZnO thin films cooled rapidly.     

Variations in the structural, optical and electrochemical properties of CeO2-TiO2 films as a function of TiO2 content

Alcohol based sols of cerium chloride (CeCl₃·7H₂O) and titanium propoxide (Ti(OPr)₄) in ethanol mixed in different mole ratios have yielded mixed oxide films on densification at 500 °C. The reversibility of the intercalation/deintercalation reactions has shown electrochemical stability of the films. Addition of TiO₂ in an equivalent mole ratio manifests in producing highly transparent films with appreciable ion storage capacity. The electrochemical studies have revealed the significant role of TiO₂ in controlling the ion storage capacity of the films, as it tends to induce the disorder. In addition, the films prepared from an aged sol are observed to exhibit a much higher ion storage capacity than the films deposited using the as-prepared sol. The X-ray photoelectron spectroscopic studies have provided information on the variation of Ce⁴⁺/Ce³⁺ ratio as a function of increased TiO₂ content in the films. This study has led to a better understanding of the increased ion storage capacity with the increased TiO₂ proportion. The transmission electron microscopic study has demonstrated the presence of CeO₂ nanograins even in films, which are amorphous to X-rays. Elucidation of the structural, optical and electrochemical features of the films has yielded information on aspects relevant to their usage in transmissive electrochromic devices. The films have been found to exhibit properties that can find application as counter electrode in electrochromic smart windows in which they are able to retain their transparency under charge insertion, high enough for practical uses. Also, the fastest coloration-bleaching kinetics for the primary electrochromic electrode (WO₃) working in combination with Ce/Ti (1:1) electrode stimulates the use of latter in electrochromic windows (ECWs).     

Enhanced magneto-optical Kerr effects in nanocrystalline Sc-doped CoFe2O4 thin films

Nanocrystalline CoFe_2−xSc_xO₄ (x=0-0.4) thin films were prepared on silicon substrates at reduced temperature by a sol-gel process, and the doping effects of scandium on the microstructure, magnetism and polar magneto-optical Kerr effects of the as-deposited films were examined. It was shown that the intensities of both of the Kerr rotation peaks increase with the doping content x of Sc³⁺. The increase for the peak at 540 nm is due to the decrease of the electrostatic polarization of O²⁻ resulting from the relatively large radius of Sc³⁺, and that for the peak at 620 nm was a result of the migration of Co²⁺ from octahedral to tetrahedral sites in the presence of the dopant of Sc³⁺.     

Properties of Sr2FeMoO6 thin films fabricated by the chemical solution deposition method

We fabricated the ordered Sr₂FeMoO₆ (SFMO) thin film with a double perovskite structure using the chemical solution deposition (CSD) method. The highly c-axis oriented SFMO thin film with a high degree of Fe/Mo ordering was successfully synthesized on an MgO (001) substrate by optimizing processing conditions. The precise preparation process control of the SFMO precursor solution leads to a typical magnetoresistance effect in a low magnetic field at room temperature.     

Synthesis and photoluminescence of Eu- or Tb-doped Mg2SiO4 nanoparticles prepared by a combined novel approach

Tb³⁺- or Eu³⁺-doped magnesium silicate phosphors were prepared for the first time by using a novel approach, combined sol-gel-microwave heating. X-ray diffraction (XRD), transmission electron microscope (TEM), thermogravimetric analysis (TGA) and photoluminescence analyses were used to characterize the phosphors. XRD confirmed a forsterite lattice of Mg₂SiO₄ for the phosphors. TEM observation indicated that the phosphors have a spherical-like shape with little aggregation and the particle size is about 50 nm, and the small size is favorable to the potential application in field emission displays. The luminescent colors of Mg₂SiO₄:Tb³⁺ and Mg₂SiO₄:Eu³⁺ phosphors are green and red respectively, furthermore the luminescent intensities of them are relatively higher than the traditional Zn₂SiO₄:Tb³⁺ and Zn₂SiO₄:Eu³⁺ phosphors. In addition, Eu³⁺ ion emissions as a structural probe suggest that the rare earth ions replace the Mg²⁺ ions in the site of M2 (C_s) in the forsterite lattice of Mg₂SiO₄.     

Photoluminescence characteristics of neodymium oxide nanocrystal/titania/ormosil composite sol-gel thin films

Neodymium (III) oxide nanocrystal/titania/organically-modified silane (ormosil) composite thin films have been prepared using a chemical approach consisting of a combination of inverse microemulsion and sol-gel techniques at low temperature. Transmission electron microscopy shows that the neodymium (III) oxide nanoparticles have a needle-like nanocrystal structure. A strong room temperature emission at 1064 nm, corresponding to the ⁴ F _3/2?⁴ I _11/2 transition, has been observed as a function of the heat treatment temperature used for the production of the composite thin films. In addition to this emission, two other main emissions at 890 nm and at 1336 nm have also been observed. In particular, there was a clear shoulder peak at 1145 nm, probably be due to the host matrix, which was observed in all the measured samples and this shoulder peak gave a maximum intensity after heat treatment at 300 °C. Received: 6 September 2000 / Accepted: 15 November 2000 / Published online: 20 June 2001     

Deposition and characterization of La2Ti2O7 thin films via spray pyrolysis process

Thin films of La₂Ti₂O₇ have been deposited on fused silica and Si substrates by a spray pyrolysis method using ethylene glycol solution of La(III)-Ti(IV)-citrate complexes as starting material and O₂ as a carrier gas. The composition, crystal structure and morphology of the films are studied.     

Quantum cutting abilities of sol-gel derived LiGdF4:Eu powders

Optical properties of europium doped LiGdF₄ (LGF) powders synthesized by the sol-gel process were investigated in the VUV range. Emission of two visible photons (due to ⁵D₀→⁷F_J transitions on two Eu³⁺ ions) per absorbed VUV photon was demonstrated indicating that a quantum cutting phenomenon takes place. This mechanism is explained by a two-step energy transfer when exciting Gd³⁺ ions in their ⁶G_J high energy level. Best luminescence efficiency was recorded at room temperature for samples with a doping rate of 5 mol% in europium ions. Effect of rare-earth concentration on internal quantum cutting efficiency was studied. Temperature dependence was also investigated and showed that the down-conversion process upon excitation at 202 nm becomes inefficient at low temperature since energy transfer from Gd³⁺ ions to Eu³⁺ ions is not effective any more. Such a result was connected with the thermal population at room temperature of Eu³⁺⁷F₁ state which is involves in the first step of the energy transfer.     

Structural and photoluminescence characters of SnO2:Sb films deposited by RF magnetron sputtering

The Antimony-doped tin oxide (SnO₂:Sb) films have been prepared on glass substrates by RF magnetron sputtering method. The prepared samples are polycrystalline films with rutile structure of pure SnO₂ and have preferred orientation of (1 1 0) direction. XRD measurement did not detect the existence of Sb₂O₃ phase and Sb₂O₅ phase; Sb ions occupy the site of Sn ions and form the substitution doping. An intensive UV-violet luminescence peak near 392 nm is observed at room temperature. Photoluminescence (PL) properties influenced by sputtering power and annealing for the SnO₂:Sb films are investigated in detail and corresponding PL mechanism is discussed.