Magnetoresistance effect in a hybrid ferromagnetic/semiconductor nanostructure

We propose a Magnetoresistance device in a magnetically modulated two-dimensional electron gas, which can be realized experimentally by the deposition of two parallel ferromagnetic strips on the top and bottom of a semiconductor heterostructure. It is shown that there exists a significant transmission difference for electrons through the parallel and antiparallel magnetization configurations of such a device, which leads to a considerable magnetoresistance effect. It is also shown that the magnetoresistance ratio of the device depends greatly on the magnetic strength difference in the two delta barriers of the system.     

Spin polarization of two-dimensional electron gas in a hybrid magnetic-electric barrier

We report on a theoretical study of spin-dependent electron transport in a two-dimensional electron gas (2DEG) modulated by a stripe of ferromagnetic metal under an applied voltage. A general formula of transmission probability for electronic tunneling through this system is obtained. Based on this formula, it is shown that large spin-polarized current can be achieved in such a device. It is also shown that the degree of electron-spin polarization is strongly dependent upon the applied voltage to the stripe in the device. These interesting properties may provide an alternative scheme to spin-polarize electrons into semiconductors, and this device may be used as a voltage-tunable spin-filter.     

Controlling spin-dependent transport via inhomogeneous magnetic flux in double-dot Aharonov-Bohm interferometer

We study the spin-dependent electron transport through parallel coupled quantum dots (QDs) embedded in an Aharonov-Bohm (AB) interferometer connected asymmetrically to leads. Both the Rashba spin-orbit interaction (RSOI) inside one of the QDs, which acquires a spin-dependent phase factor in the tunnel-coupling strengths when the electrons flow through this arm of the AB ring, and an inhomogeneous magnetic flux penetrating the structure are taken into account. Due to the existence of the RSOI induced phase factor, magnetic flux and the interdot coupling, a spin-dependent Fano effect will arise. We pay special attention on the properties of the local density of states and the conductance when the electron phase factor is close to integer multiplies of a quantum of flux. It is shown that the roles and lifetimes of the bonding and antibonding states of the two spin components are very sensitive to the phase factor and can be well controlled accordingly. This manipulation of the spin degree of freedom relies on the existence of RSOI but can be fulfilled even when its strength is very weak. The proposed structure can be easily realized with present technology and might be of practical applications in spintronics devices and quantum computing.     

Electric-tunable magnetoresistance effect in a two-dimensional electron gas modulated by hybrid magnetic-electric barrier nanostructure

The electric-tunable spin-independent magnetoresistance effect has been theoretically investigated in ballistic regime within a two-dimensional electron gas modulated by magnetic-electric barrier nanostructure. By including the omitted stray field in previous investigations on analogous structures, it is demonstrated based on this improved approximation that the magnetoresistance ratio for the considered structure can be efficiently enhanced by a proper electric barrier up to the maximum value depending on the specific magnetic suppression. Besides, it is also shown the introduction of positive electrostatic modulation can effectively overcome the degradation of magnetoresistance ratio for asymmetric configuration and enhance the visibility of periodic pattern induced by the size effect, while for an opposite modulation the system magnetoresistance ratio concerned may change its sign.     

Giant magnetoresistance effect in hybrid ferromagnetic/semiconductor nanosystems

We theoretically investigate the giant magnetoresistance (GMR) effect in general magnetically modulated semiconductor nanosystems, which can be realized experimentally by depositing two parallel ferromagnetic strips on the top of a heterostructure. Here the exact magnetic profiles and arbitrary magnetization direction of ferromagnetic strips are emphasized. It is shown that a considerable GMR effect can be achieved in such nanosystems due to the significant transmission difference for electrons tunneling through parallel and antiparallel magnetization configurations. It is also shown that the magnetoresistance ratio is strongly influenced by the magnetization direction of ferromagnetic strips in nanosystems, thus possibly leading to tunable GMR devices.     

Giant magnetoresistance effect in hybrid ferromagnetic-Schottky-metal and semiconductor nanosystem

We report on a theoretical investigation of the giant magnetoresistance (GMR) effect in hybrid ferromagnetic-Schottky-metal and semiconductor nanosystem. Experimentally, this GMR device can be realized by the deposition of two ferromagnetic (FM) stripes and one Schottky normal metal (NM) in parallel way on the top of a semiconductor GaAs heterostructure. The GMR effect emanates from the significant transmission difference for electrons tunneling through parallel and antiparallel magnetization configurations of the device, and its magnetoresistance ratio (MR) can reach the order of ¹⁰⁶%. Furthermore, it is also shown that the MR of the device depends strongly on the relative location of the Schottky NM stripe between two FM stripes.     

Fano effect in a T-shaped double quantum dot structure in the presence of Rashba spin-orbit coupling

The influence of Rashba spin-orbit coupling on the Fano lineshape of the conductance spectrum in a T-shaped double quantum dot structure is theoretically studied. By second-quantizing the electron Hamiltonian in this structure, it is found that the Rashba interaction brings about a spin-flip interdot hopping term. With the enhancement of the Rashba interaction, this term separates the two resonant peaks in the conductance spectrum from each other. More importantly, it causes the broadening of the narrow Fano peak, and the narrowing of the broader peak. Finally, the asymmetric Fano lineshape changes into a symmetric profile in the global conductance spectrum.     

Triple Quantum Dot Molecule as a Spin-Splitter

We propose a spin-splitter composed of triple quantum dots that works due to the Coulomb blockade effect and the charge and spin biases applied on external electron source and drains. The spin biases are applied only on the two drains and give their spin-dependent chemical potentials, which act as the driving forces for electron spin-polarized transport. By tuning the biases and the dots＇ levels, spin-up and spin-down electrons can be simultaneously split or separated from the source into two different drains. We show that such a tunneling process is detectable in terms of the spin accumulations on the dots or the currents flowing through the external leads. The present device is quite simple and realizable within currently existing technologies.     

The electron transport characters in a nanostructure with the periodic magnetic-electric barriers

This paper detailedly studies the transmission probability, the spin polarization and the conductance of the ballistic electron in a nanostrueture with the periodic magnetic-electric barriers These observable quantities are found to be strongly dependent not only on the magnetic configuration, the incident electron energy and the incident wave vector, but also on the number of the periodic magnetic-electric barriers The transmission coefficient and the spin polarization show a periodic pattern with the increase of the separation between two adjacent magnetic fields, and the resonance splitting increases as the number of periods increases. Surprisingly, it is found that a polarization can be achieved by spin-dependent resonant tunnelling in this structure, although the average magnetic field of the structure is zero.     

The electron transport characters in a nanostructure with the periodic magnetic-electric barriers

This paper detailedly studies the transmission probability, the spin polarization and the conductance of the ballistic electron in a nanostructure with the periodic magnetic-electric barriers. These observable quantities are found to be strongly dependent not only on the magnetic configuration, the incident electron energy and the incident wave vector, but also on the number of the periodic magnetic-electric barriers. The transmission coefficient and the spin polarization show a periodic pattern with the increase of the separation between two adjacent magnetic fields, and the resonance splitting increases as the number of periods increases. Surprisingly, it is found that a polarization can be achieved by spin-dependent resonant tunnelling in this structure, although the average magnetic field of the structure is zero.     

Tunneling mechanism through the nonlinear electrical transport in Co/CoO particles with core-shell nanostructure

We investigate the nonlinear electrical transport as a function of temperature in Co/CoO nanoparticles having core-shell nanostructure. Nanoparticle was synthesized by sol-gel citrate precursor technique where core-shell nanostructure is confirmed by the high resolution Transmission Electron Microscopy. Current-voltage (I-V) characteristics are measured over the temperature range 20-295 K. I-V curve exhibits ohmic behaviour at 295 K. Nonlinear electrical transport is observed at low temperature (T) for T?275 K. Electrical transport properties have been interpreted in terms of tunneling mechanism where tunneling between ferromagnetic Co nanoparticles takes place through the antiferromagnetic CoO layer. Analysis of dynamic conductance (G=dI/dV) indicates that the inelastic tunneling via localized states of antiferromagnetic CoO layers is dominant in the transport mechanism at low temperature.     

Tuning of electron transport through a moebius strip: Shot noise

We study electron transport through a moebius strip attached to two metallic electrodes by the use of a Green’s function technique. A parametric approach is used based on the tight-binding model to characterize the electron transport through such a bridge system and it is observed that the transport properties are significantly affected by (a) the transverse hopping strength between the two channels and (b) the strip-to-electrodes coupling strength. In this context we also describe the noise power of the current fluctuations, which provide key information about the electron correlation which is obtained by calculating the Fano factor (F). The knowledge of these current fluctuations gives important ideas for the fabrication of efficient molecular devices.     

Spin polarization of two-dimensional electron gas in hybrid ferromagnetic/semiconductor nanostructures

We present a theoretical study on the spin-dependent transport of electrons in hybrid ferromagnetic/semiconductor nanosystem under an applied bias voltage. Experimentally, this kind of nanosystem can be realized by depositing a magnetized ferromagnetic stripe with arbitrary magnetization direction on the surface of a semiconductor heterostructure. It is shown that large spin-polarized current can be achieved in such a nanosystem. It is also shown that the spin polarity of the electron transport can be switched by adjusting the applied bias voltage. These interesting properties may provide an alternative scheme to realize spin injection into semiconductors, and such a nanosystem may be used as a tunable spin-filter by bias voltage.     

Spin Filter Based on an Aharonov--Bohm Interferometer with Rashba Spin--Orbit Effect

We propose a spin filter based on both the quantum interference and the Rashba spin-orbit （RSO） effects. This spin filter consists of a Aharonov-Bohm （AB） interferometer with two quantum dots （QDs） inserted in its arms. The influences of a magnetic flux φ threading through the AB ring and the RSO interaction inside the two QDs are taken into account by using the nonequilibrium Green＇s function technique. Due to the existence of the RSO interaction, the electrons flowing through different arms of the ring will acquire a spin-dependent phase factor in the linewidth matrix elements. This phase factor, combined with the influence of the magnetic flux, will induce a spin-dependent electron transport through the device. Moreover, we show that by tuning the magnetic flux, the RSO strength and the inter-dot tunnelling coupling strength, a pure spin-up or spin-down conductance can be obtained when a spin-unpolarized current is injected from the external leads, which can be used to filter the electron spin.     

Electron transport in carbon nanotube quantum dots in an axial magnetic field

The quantum conductance of the quantum dots (QDs) made of two kinds of primary carbon nanotubes (CNTs), i.e., armchair and zigzag CNTs, threaded by an axial magnetic field, has been studied by using the tight binding approximation and constant interaction model. It is found that under increasing axial magnetic field, each conductance shell of the zigzag CNT-QDs could split into two groups with each group of two peaks moving up or down, respectively. And the up- and down-moving two peaks would re-group with other two peaks, down- and up-moving, in the neighboring shell, forming a new four-peak shell, and then re-splitting, re-grouping again due to the Aharonov-Bohm effect, which is in agreement with those of experiments. But, in contrast, the conductance shells of the armchair CNT-QDs do not split by the magnetic field. Our subsequent theoretical studies show further that the above phenomena, i.e., the conductance shell-splitting, re-grouping, and re-splitting again with increasing the magnetic field exist in all the CNT-QDs except for the armchair one.     

ac field-induced Fano resonances in a parallel-coupled double quantum dot system

The effects of an ac electric field on the Fano resonance in a parallel-coupled double quantum dot system are investigated theoretically. The field can induce the photon-assisted Fano resonances for both symmetrical and asymmetrical parallel configurations. The magnitude and position of the photon-assisted Fano peak can be tuned by the ac field strength and frequency, respectively. Furthermore, the Fano resonance can appear with increasing the field frequency for both the symmetrical and asymmetrical configurations. This provides an efficient mechanism to control the Fano resonance. The photon-electron pumping effects for the symmetrical and asymmetrical cases are also studied in the weak- and strong-coupling regime.     

Quantum fluctuations in a single electron box

Recent experiments have demonstrated that the numbern of additional electrons on a small metallic island is a staircase function of a continuous external chargen _x for temperaturesT small compared to the single electron charging energyU. We show that the finite conductanceg of the tunnel barrier connecting the island to the external gate gives rise to quantum fluctuations inn which lead to a smearing of the staircase even at zero temperature. In the experimentally relevant case of wide junctions and in the limit of small conductanceg1 the slope <n>/n _x at the turning point between two plateaus saturates at a finite value of order 1/g asT0 instead of diverging likeU/T as predicted with thermal fluctuations only. The experimentally observed broadening however is still much larger which is probably due to extrinsic effects.     

Theoretical investigation of the O2 adsorption effect in the electron transport of single Fe-porphyrin molecule

The effect of O₂ adsorption on the electron transport behavior of Fe-porphyrin molecule is investigated by the first-principles computational approach. The current-voltage characteristics of Fe-porphyrin and O₂ adsorbed Fe-porphyrin between gold electrodes are calculated. We find that the conductance of the Fe-porphyrin decreases dramatically upon the adsorption of O₂, which suggests that this system has potential application as a molecular sensor or a switch. This switching-behavior is analyzed from the evolutions of the transmission spectra and the molecular projected self-consistent Hamiltonian states of the molecular systems.     

Current control in periodically driven quantum dots using nonadiabatic double crossing

The purpose of this Letter is to propose a method for controlling electron currents on quantum dots driven by an oscillating electric field. The effects of nonadiabatic transition on time-averaged currents are theoretically studied in dot systems where energy levels exhibit a double crossing within one period of the driving field. The current is enhanced or suppressed as a result of the constructive or destructive interference between different transition paths at a double crossing. The current also depends on the number of dots because of the presence of dot-lead coupling.