Pressure cycle of superconducting Cs0.8Fe2Se2 : A transport study

We report measurements of the temperature and pressure dependence of the electrical resistivity (ρ) of single-crystalline iron-based chalcogenide Cs_0.8Fe₂Se₂. In this material, superconductivity with a transition temperature develops from a normal state with extremely large resistivity. At ambient pressure, a large “hump” in the resistivity is observed around 200 K. Under pressure, the resistivity decreases by two orders of magnitude, concomitant with a sudden T_c suppression around . Even at 9 GPa a metallic resistivity state is not recovered, and the ρ(T) “hump” is still detected. A comparison of the data measured upon increasing and decreasing the external pressure leads us to suggest that the superconductivity is not related to this hump.     

Electrical transport properties of Ag3Sn compound

The temperature behaviors of the electrical resistivity in polycrystalline Ag₃Sn bulk samples were investigated experimentally. We found that the temperature dependence of resistivity shows concave function characteristics from 305 down to 26 K, and can be described by a parallel resistor model [H. Wiesmann et al., Phys. Rev. Lett. 38 (1977) 782]. The resistivities of all samples reveal T² behavior from 26 down to . We compared our data to the existing theories in which the T² dependence of resistivity has been proposed. However, we found none of them can describe the experimental data, and the physical mechanism of the T² behavior of resistivity at low temperatures is still enigmatical.     

Oxygen vacancy doping effect on the electrical and magnetic behavior of Ba5−xLaxNb4−xTixO15

We report electric and magnetic properties of oxygen deficient Ba_5−xLa_xNb_4−xTi_xO_15−δ phases, which have been prepared by solid-state reaction method followed by a controlled reduction process under hydrogen atmosphere. The extra electrons added by the formation of the oxygen vacancies (δ) introduce localized spins and the magnetic susceptibility can be described by a temperature-independent contribution and a Curie-Weiss term associated to the Ti³⁺ ion formation. Besides, the experimental resistivity (ρ) data of these four reduced compounds are well described in a wide temperature range with the equation , which suggests the presence of small polarons in the system. Although, all samples present electrical insulating behavior, the electrical resistivity decreases four orders of magnitude for intermediate x values. We interpreted this fact as a consequence of the mix between the localized bands of the Nb and Ti ions, which favors the promotion of carriers due to reduction of the band gap.     

Thermal and electronic transport in CeRu2Al10: Evidence for a metal-insulator transition

A first report of physical properties of the ternary intermetallic compound CeRu₂Al₁₀ is given. The electrical resistivity below room temperature shows activated behaviour with a narrow gap of before the onset of a sharp peak in ρ(T) below . The Hall coefficient as well as the thermoelectric power are overall positive, and both increase in a similarly sharp manner below T^*. The lattice part of the thermal conductivity indicates phonon coupling of the heat transport at T^*, possibly underlying a lattice transformation that accompanies the putative metal-to-insulator and magnetic phase transitions.     

Electrical behavior of nano-polycrystalline (La1−yKy)0.7Ba0.3MnO3 manganites

We present a study of the structural and electrical behavior of nano-polycrystalline mixed barium and alkali substituted lanthanum-based manganite, (La_1−yK_y)_0.7Ba_0.3MnO₃ with y=0.0-0.3. The samples were synthesized by the polymerization complex sol-gel method. The powder X-ray diffraction (XRD) data of the samples show a single-phase character with space group. The magnetic and electrical transport properties of the nano-polycrystalline samples have been investigated in the temperature range 50-300 K and a magnetic field up to 10 kOe. The metal-insulator transition temperature T_p of all the samples decreased with potassium doping, and also, it increased slightly with the application of magnetic field. The low field magnetoresistance, which is absent in the single-crystalline perovskite, was observed and increased with decreasing temperature. Comparing the experimental resistivity data with the theoretical models shows that the high temperature electrical behavior of these samples is in accordance with the adiabatic small polaron-hopping model. In the metal-ferromagnetic region the resistivity is found to be quite well described by ρ=ρ₀+ρ₂T²+ρ_4.5T^4.5.     

Transport properties and magnetoresistance in CoNb1−xMnxSb half-Heusler alloys with a low temperature localization

The transport properties and magnetoresistance of half-Heusler CoNb_1−xMn_xSb (x=0.0-1.0) alloys have been investigated between 2 and 300 K. In this temperature range, a metallic conductivity has been observed for the alloys with higher (x=1.0) and lower (x=0.0-0.2) Mn contents. However, the middle Mn content alloys (x=0.4-0.8) exhibit non-metallic conductive behavior. Their temperature dependence of resistivity undergoes a Mott localization law ρ=ρ₀exp(T₀/T)^p (p=1/4) rather than a thermal excitation regime ρ=ρ₀exp(E_a/kT) at low temperature (). The localization can be attributed to atomic and magnetic disorder. Resistivity peaks from 25 to 300 K were also observed for these alloys. Magnetotransport investigation reveals that these resistivity peaks result from localization effect as well as spin-disorder scattering.     

Hydrogen bonds mediated magnetism in Cu(bmen)2Pd(CN)4

Results of synthesis, X-ray structure analysis, electron spin resonance, susceptibility, magnetization and specific heat measurements of powdered Cu(bmen)₂Pd(CN)₄ (,N^′-dimethyl-1,2-diaminoethane) are reported. Its structure is formed of quasi-linear chains of the [-Cu(bmen)₂-NC-Ni(CN)₂-CN-]_n composition; these are interlinked by hydrogen bonds (HBs) leading to two-dimensional patterns. Upon magnetic, spectral and thermodynamic measurements the compound was identified as an S=1/2 Heisenberg antiferromagnet on a square lattice with due to the dominant role of HBs in creating a square network. The long-range ordering observed at 0.24 K is proposed to be of a Néel type. The possibility of tuning the exchange interactions in various directions is considered.     

The effect of oxygen stoichiometry on electrical transport and magnetic properties of La0.9Te0.1MnOy

The effect of the variation of oxygen content on structural, magnetic and transport properties in the electron-doped manganites La_0.9Te_0.1MnO_y has been investigated. All samples show a rhombohedral structure with the space group The Curie temperature T_C decreases and the paramagnetic-ferromagnetic (PM-FM) transition becomes broader with the reduction of oxygen content. The resistivity of the annealed samples increases slightly with a small reduction of oxygen content. Further reduction in the oxygen content, the resistivity maximum increases by six orders of magnitude compared with that of the as-prepared sample, and the ρ(T) curves of samples with y=2.86 and y=2.83 display the semiconducting behavior (dρ/dT<0) in both high-temperature PM phase and low-temperature FM phase, which is considered to be related to the appearance of superexchange ferromagnetism and the localization of carriers. The results are discussed in terms of the combined effects of the increase in the Mn²⁺/(Mn²⁺+Mn³⁺) ratio, the partial destruction of double exchange interaction, and the localization of carriers due to the introduction of oxygen vacancies in the Mn-O-Mn network.     

Magnetic properties of PrRh2Si2: A neutron diffraction study

The magnetic properties of polycrystalline PrRh₂Si₂ sample have been investigated by neutron diffraction measurements. Antiferromagnetic transition with an anomalously high ordering temperature (T_N∼68 K) is clearly observed in magnetic susceptibility, specific heat, electrical resistivity and neutron diffraction measurements. Neutron diffraction study shows that Pr³⁺ ions carry an ordered moment of 2.99(7)μ_B/Pr³⁺ and align along the crystallographic±c-directions for the ions located at the (0,0,0) and positions. The magnetoresistance at 2 K and 10 T is rather large (∼35%).     

Temperature dependence of electrical resistivity for Ca-doped perovskite-type Y1−xCaxCoO3 prepared by sol-gel process

The temperature dependences of DC electrical resistivity for perovskite-type oxides Y_1−xCa_xCoO₃ (0?x?0.1), prepared by sol-gel process, were investigated in the temperature range from 20 K up to 305 K. The results indicated that with increase of doping content of Ca the resistivity of Y_1−xCa_xCoO₃ decreased remarkably, which was found to be caused mainly by increase of carrier (hole) concentration. In the whole temperature range investigated the temperature dependence of resistivity ρ(T) for the un-doped (x=0) sample decreased exponentially with decreasing temperature (i.e. ln ρ∝1/T), with a conduction activation energy ; the resisitivity of lightly doped oxide (x=0.01) possessed a similar temperature behavior but has a reduced E_a (0.155 eV). Moreover, experiments showed that the relationship ln ρ∝1/T existed only in high-temperature regime for the heavily doped samples (T?82 and ∼89 K for x=0.05 and 0.1, respectively); at low temperatures Mott's ln ρ∝T^−1/4 law was observed, indicating that heavy doping produced strong random potential, which led to formation of considerable localized states. By fitting of the experimental data to Mott's T^−1/4 law, we estimated the density of localized states N(E_F) at the Fermi level, which was found to increase with increasing doping content.     

Crystal field effect and geometric frustration in Er2Ti2O7 —an XY antiferromagnetic pyrochlore

Magnetic susceptibility of powder Er₂Ti₂O₇ (ErT) is measured between 300 K and 80 K. shows a Curie-Weiss (CW) type behaviour with   ErTiO_3.5 and . A crystal field (CF) analysis of our experimental data, g-values (g_∥=0.27 and g_⊥=7.8) and the positions of two CF levels (reported earlier from an inelastic neutron scattering study) provide CF parameters and CF levels of the ground ⁴I_15/2 and excited multiplets of ErT. The theoretical follows a CW-type behaviour, with . Single-ion magnetic anisotropy (χ_⊥−χ_∥) is 9500×10⁻⁶ emu/mol ErTiO_3.5 at 300 K, which increases by ∼54 times at 10 K and ErT resembles an XY planar system. It can be inferred from CF analysis that the earlier observed change of from −13 K to −22 K below 50 K is not due to the CF effect. Nuclear hyperfine (HF) levels of ¹⁶⁷ErT and ¹⁶⁶ErT are calculated and the theoretical curve of vs. T (K) for T<T_N matches the observed results. Mössbauer lines expected for ¹⁶⁶ErT are also predicted.     

Magnetic study of Mg0.95Mn0.05Fe2O4 ferrite nanoparticles

The magnetic properties of Mg_0.95Mn_0.05Fe₂O₄ ferrite samples with an average particle size of ∼6.0±0.6 nm have been studied using X-ray diffraction, Mössbauer spectroscopy, dc magnetization and frequency dependent real χ^′(T) and imaginary χ^″(T) parts of ac susceptibility measurements. A magnetic transition to an ordered state is observed at about 195 K from Mössbauer measurements. The zero-field-cooled (ZFC) and field-cooled (FC) magnetization have been recorded at low field and show the typical behavior of a small particle system. The ZFC curve displays a broad maximum at , a temperature which depends upon the distribution of particle volumes in the sample. The FC curve was nearly flat below , as compared with monotonically increasing characteristics of non-interacting superparamagnetic systems indicating the existence of strong interactions among the nanoparticles. A frequency-dependent peak observed in χ^′(T) is well described by Vogel-Fulcher law, yielding a relaxation time and an interaction parameter . Such values show the strong interactions and rule out the possibility of spin-glass (SG) features among the nanoparticle system. On the other hand fitting with the Néel-Brown model and the power law yields an unphysical large value of τ₀ (∼6×10⁻⁶⁹ and 1.2×10⁻²² s respectively).     

Influence of niobium doping on the electrical properties of 0.58Pb(Sc1/2Nb1/2)O3-0.42PbTiO3 single crystal

Piezoelectric single crystals of 0.58Pb(Sc_1/2Nb_1/2)-0.42PbTiO₃ and Nb⁵⁺-doped PSN-PT have been grown using flux technique. It is believed that the addition of Nb⁵⁺ creates lead vacancy in order to compensate charge neutrality. The structural distortion that occured in the doped crystals has been revealed through broadening of some peaks in X-ray diffraction studies. Niobium content that increased from 0.50 to 1.00 mol% might have induced more defect dipoles associated with . This plays a significant role in improving the ferroelectric, dielectric and piezoelectric properties. Our observations clearly show an increase in the spontaneous polarization (P_r), dielectric constant at room temperature, degree of diffuseness and transition temperature (T_c) and also a decrease in coercive field. The reasons behind these enhanced electrical properties are discussed in detail.     

Effect of Mn-doping on the electrical properties of Cu2GeSe3

In this work we report the temperature dependence of the resistivity ρ of p-Cu₂GeSe₃ and manganese-doped p-Cu₂GeSe₃ at low temperature. It was found that for a intrinsic sample ρ obeys the Shklovskii-Efros-type variable-range hopping resistivity law in the temperature range from 4 to 63 K. This behaviour is governed by generation of a Coulomb gap Δ=78 meV in the density of localized states. We find a low activation term T₀=0.24 K, which is an indication of a large localization length ξ. For Mn-doped sample a metal-insulator transition (MIT) is observed at T=65 K. On the basis of the Mott criterion for metal-insulator transition, the critical carrier density n_c is determined. From the analysis of resistivity data it is concluded that Mn acts as acceptor impurity.     

Thermal expansion and kinetic coefficients of crystals

Electrical (ρ) and thermal (W) resistivities and thermal expansion coefficient (β) of Cu, Zn, Al, Pb, Ni, β-brass, Al₂O₃, NaCl, Si, SiO₂(∥), and SiO₂(⊥) were simultaneously measured with standard four-probe, absolute steady-state, and quartz dilatometer techniques. Measurements of Ni and β-brass were performed at temperatures from 300 to 1100 K and measurements of all other samples were made between 90 and 500 K. This temperature range includes the range below and above the Debye temperature (T_D). The total uncertainties of the specific electrical and thermal resistivities and thermal expansion coefficient (TEC) measurements are 0.5%, 3.0%, and (1.5-4.0%), respectively. The universal linear relationship between the electrical and thermal resistivities and βΤ over the wide temperature range was found experimentally. Using the Landau criterion for convection development for ideal phonon and electron gases in the solids, the universal relations, ρ^ph/ρ^*≡βT and W^ph/W^*≡βT (where ρ^ph is the phonon electrical resistivity, is the characteristic electrical resistivity, W^ph is the phonon thermal resistivity, and W^*=k_BG/qc_p is the characteristic thermal resistivity) between relative phonon electrical and phonon thermal resistivities and βΤ were derived. The derived universal relations provide a new method for estimating the kinetic coefficients (electrical and thermal resistivities) from TEC measurements.     

Molecular dynamics of [(CH2OH)3CNH3]2SiF6 by phase transition of 178 K

We have investigated the molecular motions of TRIS⁺ ([(CH₂OH)₃CNH₃]⁺) and ions in the [(CH₂OH)₃CNH₃]₂SiF₆ crystal below room temperature from the measurements of the spin-lattice relaxation time T₁ and the NMR absorption line of ¹H and ¹⁹F nuclei, in order to elucidate the changes of the molecular motions by the phase transition of T_c=178 K. The narrowing of the ¹⁹F-NMR line was observed around T_c=178 K and the reorientation of the anion appears above T_c. Moreover, from the analysis of the temperature dependence of T₁, we have observed that the activation energy of the reorientational motion of ions changes from 0.168 eV (T>T_c) to 0.185 eV (T<T_c). Based on these results, we found that the reorientational motion of ions is closely related to the origin of the phase transition at T_c. In addition, from the measurement of the ¹H-NMR line, we also found that the reorientational motion of H₂ in the -CH₂OH group becomes active accompanied by the phase transition.     

Antiferromagnetic transition and electrical conductivity in α-Gd2S3

Magnetic susceptibility and electrical resistivity of α-Gd₂S₃ with an orthorhombic structure (space group: Pnma) have been measured for powder and single-crystal samples. While the magnetic susceptibility of powder sample exhibits a broad peak having a maximum at 4.2 K, the susceptibility for a single crystal with an applied magnetic field along the b-axis demonstrates a sharp drop below 10 K. Nevertheless, the susceptibility with the field perpendicular to the b-axis keeps increasing with decreasing temperature even below 10 K. The electrical resistivity ρ for the powder sample of 4.2×10³ Ω cm around room temperature increases with decreasing temperature and shows a slight discontinuity at about 65 K. In both regions above and below 65 K, is proportional to T^−1/4 with respective coefficients, which is associated with Mott variable-range hopping conductivity. The resistivity of a single crystal along the b-axis is considerably smaller than the value for the powder sample as 0.35 Ω cm at room temperature, and its temperature dependence is fairly weak. While cooling, the resistivity first decreases down to 240 K and then keeps the value independent of the temperature down to 140 K, and subsequently rises gently below 140 K.