Giant magnetoresistance effect in hybrid ferromagnetic/semiconductor nanosystems

We theoretically investigate the giant magnetoresistance (GMR) effect in general magnetically modulated semiconductor nanosystems, which can be realized experimentally by depositing two parallel ferromagnetic strips on the top of a heterostructure. Here the exact magnetic profiles and arbitrary magnetization direction of ferromagnetic strips are emphasized. It is shown that a considerable GMR effect can be achieved in such nanosystems due to the significant transmission difference for electrons tunneling through parallel and antiparallel magnetization configurations. It is also shown that the magnetoresistance ratio is strongly influenced by the magnetization direction of ferromagnetic strips in nanosystems, thus possibly leading to tunable GMR devices.     

Giant magnetoresistance effect in hybrid ferromagnetic-Schottky-metal and semiconductor nanosystem

We report on a theoretical investigation of the giant magnetoresistance (GMR) effect in hybrid ferromagnetic-Schottky-metal and semiconductor nanosystem. Experimentally, this GMR device can be realized by the deposition of two ferromagnetic (FM) stripes and one Schottky normal metal (NM) in parallel way on the top of a semiconductor GaAs heterostructure. The GMR effect emanates from the significant transmission difference for electrons tunneling through parallel and antiparallel magnetization configurations of the device, and its magnetoresistance ratio (MR) can reach the order of ¹⁰⁶%. Furthermore, it is also shown that the MR of the device depends strongly on the relative location of the Schottky NM stripe between two FM stripes.     

The effect of periodic magnetic-electric barriers on electron transport in a nanostructure

Using the transfer matrix method, the transmission probability, the spin polarization and the electron conductance of a ballistic electron are studied in detail in a nanostructure. We observe that these quantities sensitively depend on the number of periodic magnetic-electric barriers. As the number of periods increases, the resonance splitting increases, the number of the resonance peaks increases and the peaks become sharper as well as the spin polarization being enhanced. Surprisingly, a polarization of nearly 100% can be achieved by spin-dependent resonant tunneling in this structure, although the average magnetic field of the structure is zero.     

Electric-tunable magnetoresistance effect in a two-dimensional electron gas modulated by hybrid magnetic-electric barrier nanostructure

The electric-tunable spin-independent magnetoresistance effect has been theoretically investigated in ballistic regime within a two-dimensional electron gas modulated by magnetic-electric barrier nanostructure. By including the omitted stray field in previous investigations on analogous structures, it is demonstrated based on this improved approximation that the magnetoresistance ratio for the considered structure can be efficiently enhanced by a proper electric barrier up to the maximum value depending on the specific magnetic suppression. Besides, it is also shown the introduction of positive electrostatic modulation can effectively overcome the degradation of magnetoresistance ratio for asymmetric configuration and enhance the visibility of periodic pattern induced by the size effect, while for an opposite modulation the system magnetoresistance ratio concerned may change its sign.     

Spin polarization of two-dimensional electron gas in hybrid ferromagnetic/semiconductor nanostructures

We present a theoretical study on the spin-dependent transport of electrons in hybrid ferromagnetic/semiconductor nanosystem under an applied bias voltage. Experimentally, this kind of nanosystem can be realized by depositing a magnetized ferromagnetic stripe with arbitrary magnetization direction on the surface of a semiconductor heterostructure. It is shown that large spin-polarized current can be achieved in such a nanosystem. It is also shown that the spin polarity of the electron transport can be switched by adjusting the applied bias voltage. These interesting properties may provide an alternative scheme to realize spin injection into semiconductors, and such a nanosystem may be used as a tunable spin-filter by bias voltage.     

Resistance switching in Fe-doped P0.7Ca0.3MnO3 thin films

An enhanced electric-pulse-induced resistance (EPIR) switching effect is observed in the Ag/P_0.7Ca_0.3Mn_1 − xFe_xO₃/YBa₂Cu₃O₇ (Ag/PCMFO/YBCO) and Ag/(PCMFO/PCMO)/YBCO structures. Unlike in the PCMO-based EPIR devices, where the Ag/PCMO interface plays a crucial role, both the Ag/PCMFO interface and the bulk PCMFO are found to have significant contributions to the EPIR switching of the PCMFO-based device. A possible explanation is to extend the pulse-driven oxygen ion/vacancy motion model at the metal/PCMO interface region to the bulk PCMFO.     

Tunnel barrier and noncollinear magnetization effects on shot noise in ferromagnetic/semiconductor/ferromagnetic heterojunctions

Based on the scattering approach, we investigate transport properties of electrons in a one-dimensional waveguide that contains a ferromagnetic/semiconductor/ferromagnetic heterojunction and tunnel barriers in the presence of Rashba and Dresselhaus spin-orbit interactions. We simultaneously consider significant quantum size effects, quantum coherence, Rashba and Dresselhaus spin-orbit interactions and noncollinear magnetizations. It is found that the tunnel barrier plays a decisive role in the transmission coefficient and shot noise of the ballistic spin electron transport through the heterojunction. When the small tunnel barriers are considered, the transport properties of electrons are quite different from those without tunnel barriers.     

Spin polarization of two-dimensional electron gas in a hybrid magnetic-electric barrier

We report on a theoretical study of spin-dependent electron transport in a two-dimensional electron gas (2DEG) modulated by a stripe of ferromagnetic metal under an applied voltage. A general formula of transmission probability for electronic tunneling through this system is obtained. Based on this formula, it is shown that large spin-polarized current can be achieved in such a device. It is also shown that the degree of electron-spin polarization is strongly dependent upon the applied voltage to the stripe in the device. These interesting properties may provide an alternative scheme to spin-polarize electrons into semiconductors, and this device may be used as a voltage-tunable spin-filter.     

Fano effect in a T-shaped double quantum dot structure in the presence of Rashba spin-orbit coupling

The influence of Rashba spin-orbit coupling on the Fano lineshape of the conductance spectrum in a T-shaped double quantum dot structure is theoretically studied. By second-quantizing the electron Hamiltonian in this structure, it is found that the Rashba interaction brings about a spin-flip interdot hopping term. With the enhancement of the Rashba interaction, this term separates the two resonant peaks in the conductance spectrum from each other. More importantly, it causes the broadening of the narrow Fano peak, and the narrowing of the broader peak. Finally, the asymmetric Fano lineshape changes into a symmetric profile in the global conductance spectrum.     

Electron transport in carbon nanotube quantum dots in an axial magnetic field

The quantum conductance of the quantum dots (QDs) made of two kinds of primary carbon nanotubes (CNTs), i.e., armchair and zigzag CNTs, threaded by an axial magnetic field, has been studied by using the tight binding approximation and constant interaction model. It is found that under increasing axial magnetic field, each conductance shell of the zigzag CNT-QDs could split into two groups with each group of two peaks moving up or down, respectively. And the up- and down-moving two peaks would re-group with other two peaks, down- and up-moving, in the neighboring shell, forming a new four-peak shell, and then re-splitting, re-grouping again due to the Aharonov-Bohm effect, which is in agreement with those of experiments. But, in contrast, the conductance shells of the armchair CNT-QDs do not split by the magnetic field. Our subsequent theoretical studies show further that the above phenomena, i.e., the conductance shell-splitting, re-grouping, and re-splitting again with increasing the magnetic field exist in all the CNT-QDs except for the armchair one.     

Transport Characteristics of Mesoscopic Radio-Frequency Single Electron Transistor

The transport property of a quantum dot under the influence of external time-dependent field is investigated. The mesoscopic device is modelled as semiconductor quantum dot coupled weakly to superconducting leads via asymmetric double tunnel barriers of different heights. An expression for the current is deduced by using the Landauer-Buttiker formula, taking into consideration of both the Coulomb blockade effect and the magnetic field. It is found that the periodic oscillation of the current with the magnetic field is controlled by the ratio of the frequency of the applied ac-field to the electron cyclotron frequency. Our results show that the present device operates as a radio-frequency single electron transistor.     

Thermodynamics Properties of Mesoscopic Quantum Nanowire Devices

We investigate the thermodynamics properties of mesoscopic quantum nanowire devices, such as the effect of electron-phonon relaxation time, Peltier coefficient, carrier concentration, frequency of this field, and channel width. The influence of time-varying fields on the transport through such device has been taken into consideration. This device is modelled as nanowires connecting to two reservoirs. The two-dimensional electron gas in a GaAs- AlGaAs heterojunction has a Fermi wave length which is a hundred times larger than that in a metal. The results show the oscillatory behaviour of dependence of the thermo power on frequency of the induced field. These results agree with the existing experiments and may be important for electronic nanodevices.     

Domain structures of ultrathin magnetic nanobelts

We use a simple magnetization model to determine domain structures of ultrathin magnetic nanobelts. A train of alternate domains are formed along the length direction. Optimal domain length decreases with belt width. Experimental domain length distributions of Fe bilayer nanobelts can be naturally explained. This approach should be applicable to similar nanomagnets.     

Magnetostriction and magnetoresistance in nanocontacts

Ni nanocontacts have been grown by electrodeposition using a self-terminating technique in a single electrolyte bath based on nickel sulfate, nickel chloride and boric acid. Resistance measurements performed on different samples presented two kinds of obviously different magnetoresistance effects. The analysis of the data sets showed that magnetostriction might play a key role in magnetoresistance of the electrodeposited Ni nanocontacts.     

Selective spin injection controlled by electrical way in ferromagnet/quantum dot/semiconductor system

Selective and large polarization of current injected into semiconductor (SC) is predicted in ferromagnet (FM)/quantum dot (QD)/SC system by varying the gate voltage above the Kondo temperature. In addition, spin-dependent Kondo effect is also revealed below Kondo temperature. It is found that Kondo resonances for up spin state are suppressed with increasing of the polarization P of the FM lead. While the down one is enhanced. The Kondo peak for up spin is disappear at P=1.     

Peltier Coefficient and Photon-Assisted Tunnelling in Quantum Point Contact

We present the Peltier coefficient and thermal transport in quantum point contact (QPC), under the influence of external fields and different temperatures. Also we obtain the oscillations of the Peltier coefficient in external fields. Numerical calculations of the Peltier coefficient are performed at different applied voltages, amplitudes and temperatures. The obtained results are consistent with the experimental data in the literature.     

Frequency dependence of the resistive switching effect in Bi2Sr2CaCu2O8+y/Ag film heterocontacts

In this work we have performed the relaxation studies “in situ” of the electron instability effect (EIE) in the heterostructures based on BSCCO single crystals. The new effect of suppression of EIE or colossal electroresistance via application of an alternating low frequency electric field to the heterojunctions in the BSCCO-based single crystals has been found. It has been shown that the top possible frequencies for observation of the effect are of the order of 10³ Hz. This fact is interpreted as accumulation of the oxygen ions driven by the electric field to the interface. On the other hand, it has been shown that the switching events are limited by two time processes: t≈1 ms and about ten seconds. The first ones are caused by rearrangement of a charge net in the degraded surface at the electric field switching. The latter are caused by oxygen diffusion to vacancies under electric field above some threshold value. The considered experimental data confirm the correlation character of the HTSC properties as Mott systems, which appears in extreme sensitivity to the doping level, in the tendency to phase separation under external actions, in the hysteresis character of the metal-insulator transition.     

Spin-dependent internal photo-electron emission over metal–semiconductor junctions – a study with circularly polarised infrared radiation

The spin asymmetry of internal photo-electron emission over Schottky barriers has been investigated for Fe/GaAs (001) having close-to-ideal current–voltage characteristics. Using a low-power circularly polarised YAG laser operated at its fundamental frequency (λ=1064 nm) as well as a visible diode laser (λ=670 nm) we demonstrate that, by eliminating the photo-current due to inter-band transitions in GaAs with the infrared source, a significant enhancement to the magnetic asymmetry could be achieved. The bias dependence of the asymmetry was also measured. It was found that the values were considerably different for the photo-electrons traversing the barriers in opposite directions. Received: 15 November 2001 / Revised version: 23 March 2002 / Published online: 2 May 2002     

Self-organized semiconductor surfaces as templates for nanostructured magnetic thin films

Spontaneous pattern formation during epitaxial growth or ion erosion of semiconductor wafers offers an elegant route towards large-area nanostructured surfaces. In homoepitaxy, kinetics may result in rather uniform three-dimensional islands. In the case of semiconductor heteroepitaxy, strain relief leads to the formation of nanofaceted three-dimensional crystallites, which may self-organize into quasiperiodic arrays. By tuning substrate miscut and film thickness, or growing superlattices, a variety of patterns with different symmetries can be obtained, as will be summarized for the model system of SiGe on Si(001). Since these self-organized nanostructure arrays cover the entire wafer on which they are grown, they can serve as large-area nanopatterned substrates for subsequent deposition of magnetic thin films. It will be demonstrated that such templates allow the study of correlations between magnetic and chemical interfacial roughness, as well as the influence of pattern symmetry on the magnetic anisotropy of thin Co films. Furthermore, shadow deposition of magnetic material onto specially faceted nanostructure arrays allows the fabrication of nanomagnet arrays and the study of their magnetic properties. Received: 31 July 2002 / Accepted: 2 October 2002 / Published online: 5 February 2003 RID="*" ID="*"Corresponding author. Fax: +43-3842/402-760, E-mail: teichert@unileoben.ac.at