Angular dependence of tunneling magnetoresistance in magnetic semiconductor heterostructures

Theoretical studies on spin-dependent transport in magnetic tunnel heterostructures consisting of two diluted magnetic semiconductors (DMS) separated by a nonmagnetic semiconductor (NMS) barrier, are carried in the limit of coherent regime by including the effect of angular dependence of the magnetizations in DMS. Based on parabolic valence band effective mass approximation and spontaneous magnetization of DMS electrodes, we obtain an analytical expression of angular dependence of transmission for DMS/NMS/DMS junctions. We also examine the dependence of spin polarization and tunneling magnetoresistance (TMR) on barrier thickness, temperature, applied voltage and the relative angle between the magnetizations of two DMS layers in GaMnAs/GaAs/GaMnAs heterostructures. We discuss the theoretical interpretation of this variation. Our results show that TMR of more than 65% are obtained at zero temperature, when one GaAs monolayer is used as a tunnel barrier. It is also shown that the TMR decreases rapidly with increasing barrier width and applied voltage; however at high voltages and low thicknesses, the TMR first increases and then decreases. Our calculations explain the main features of the recent experimental observations and the application of the predicted results may prove useful in designing nano spin-valve devices.     

Phonon-assisted tunneling and shot noise in double barrier structures in a longitudinal magnetic field

The phonon-assisted resonant tunneling is studied for the double barrier structures in a longitudinal magnetic field. Using the scattering matrix approach with an appropriate one-particle Green's function we are able to calculate the current and the zero frequency shot noise power spectrum in a large range of the magnetic field and to any order of the electron-phonon interaction. Obtained results describe well the relevant experimental data and provide new suggestions for further examinations.     

Electromodulation of the magnetoresistance in diluted magnetic semiconductors based heterostructures

We study the properties of heterostructures formed by two layers of a diluted magnetic semiconductor separated by a nonmagnetic semiconductor layer. We find that there is a RKKY-type exchange coupling between the magnetic layers that oscillates between ferromagnetic and antiferromagnetic as a function of the different parameters in the problem. The different transport properties of these phases make that this heterostructure presents strong magnetoresistive effects. The coupling can be also modified by an electric field. We propose that it is possible to alter dramatically the electrical resistance of the heterostructure by applying an electric field. Our results indicate that in a single gated sample the magnetoresistance could be modulated by an electrical bias voltage.     

Spin-polarized inter-grain tunneling as the probable mechanism for low-field magnetoresistance in partially crystallized La0.5Sr0.5MnO3 thin films

Amorphous/crystalline mixed La_0.5Sr_0.5MnO₃ (LSMO) thin films on quartz wafers are prepared at different depositing temperatures using laser ablation and their low-field magnetoresistive property is investigated. It is argued that the insulating amorphous layers separating the magnetic microcrystalline grains may act as the barriers for electron tunneling. The rapid decay of magnetoresistance with increasing temperature is explained by the spin-polarized inter-grain tunneling. Given the spin-polarized inter-grain tunneling as the probable mechanism, it is believed that the spin flip during inter-grain tunneling reaches a minimum at the optimized depositing temperature of 600 °C and consequently the maximal low-field magnetoresistance is obtained. Received: 7 September 2000 / Accepted: 19 December 2000 / Published online: 23 March 2001     

Analysis of magnetic field dependent mobility in ferromagnetic Ga1−xMnxAs layers

The magneto-transport properties of ferromagnetic Ga_1−xMn_xAs epilayers with Mn mole fractions in the range of x≈2.2-4.4% were investigated through Hall effect measurements. The magnetic field-dependent Hall mobility for a metallic sample with x≈2.2% in the temperature range of T=0-300 K was analyzed by magnetic field-dependent mobility model including an activation energy of Mn acceptor level. This model provides outstanding fits to the measured data up to T=300 K. It was found that the acceptor levels with activation energies of 112 meV at B=0 Oe decreased to 99 meV at B=5 kOe in the ferromagnetic region. The decrease in acceptor activation energy was due to the spin splitting of the Mn acceptor level in the ferromagnetic region, and was responsible for increase in carrier concentration.     

First-principles and Monte Carlo combinational study on Zn1−xCoxO diluted magnetic semiconductor

The electronic structures and magnetic properties of Zn_1−xCo_xO (x=5.55%,8.33%,12.5%) are studied using first-principles calculations in combination with Monte Carlo (MC) simulation. The combinational method makes possible a complete simulation from the microscopic magnetic interaction to macroscopic magnetic behavior. The calculated results from first principles indicate that the ferromagnetic ground state is stabilized by a half-metallic electronic structure which originates from the strong hybridization between Co 3d electrons and O 2p electrons. With the magnetic coupling strengths obtained from first-principles calculations, the MC simulation predicts the ferromagnetism of Zn_1−xCo_xO (x=5.55%,8.33%,12.5%) with , which is consistent with the experimental facts.     

Combined effects of electric and magnetic fields on confined donor states in a diluted magnetic semiconductor parabolic quantum dot

A variational formalism for the calculation of the binding energies of hydrogenic donors in a parabolic diluted magnetic semiconductor quantum dot is discussed. Results are obtained for Cd Mn Te/Cd Mn Te structures as a function of the dot radius in the presence of external magnetic and electric fields applied along the growth axis. The donor binding energies are computed for different field strengths and for different dot radii. While the variation of impurity binding energy with dot radii and electric field are as expected, the polarizability values enhance in a magnetic field. However, for certain values of dot radii and in intense magnetic fields the polarizability variation is anomalous. This variation of polarizability is different from non- magnetic quantum well structures. Spin polaronic shifts are estimated using a mean field theory. The results show that the spin polaronic shift increases with magnetic field and decreases as the electric field and dot radius increase.     

Spin-polarized current produced by a double barrier resonant tunneling diode

The spin-polarized tunneling current through a double barrier resonant tunneling diode (RTD) made with a semimagnetic semiconductor is studied theoretically. The calculated spin-polarized current and polarization degree are in agreement with recent experimental results. It is predicted that the polarization degree can be modulated continuously from +1 to −1 by changing the external voltage such that the quasi-confined spin-up and spin-down energy levels shift downwards from the Fermi level to the bottom of the conduction band. The RTD with low potential barrier or the tunneling through the second quasi-confined state produces larger spin-polarized current. Furthermore a higher magnetic field enhances the polarization degree of the tunneling current.     

Spatial determination of magnetic avalanche ignition points

Using time-resolved measurements of local magnetization in the molecular magnet _Mn12${\mathrm{Mn}}_{12}$-ac, we report studies of magnetic avalanches (fast magnetization reversals) with non-planar propagating fronts, where the curved nature of the magnetic fronts is reflected in the time-of-arrival at micro-Hall sensors placed at the surface of the sample. Assuming that the avalanche interface is a spherical bubble that grows with a radius proportional to time, we are able to locate the approximate ignition point of each avalanche in a two-dimensional cross-section of the crystal. We find that although in most samples the avalanches ignite at the long ends, as found in earlier studies, there are crystals in which ignition points are distributed throughout an entire weak region near the center, with a few avalanches still originating at the ends.     

A Hall coefficient investigation of ferromagnetic Ga1−xMnxAs layers on (100) GaAs substrates

Ferromagnetic Ga_1−xMn_xAs epilayers with Mn mole fraction in the range of x≈2.2-4.4% were grown on semi-insulating (100) GaAs substrates using the molecular beam epitaxy technique. The transport properties of these epilayers were investigated through Hall effect measurements. The measured hole concentration of Ga_1−xMn_xAs layers varied from 4.4×10¹⁹ to 3.4×10¹⁹ cm⁻³ in the range of x≈2.2-4.4% at room temperature. From temperature dependent resisitivity data, the sample with x≈4.4% shows typical behavior for insulator Ga_1−xMn_xAs and the samples with x≈2.2 and 3.7% show typical behavior for metallic Ga_1−xMn_xAs. The Hall coefficient for the samples with x≈2.2 and 4.4% was fitted assuming a magnetic susceptibility given by Curie-Weiss law in a paramagnetic region. This model provides good fits to the measured data up to and the Curie temperature T_c was estimated to be 65, 83 K and hole concentration p was estimated to be 5.1×10¹⁹, 4.6×10¹⁹ cm⁻³ for the samples with x≈2.2 and 4.4%, respectively, confirming the existence of an anomalous Hall effect for metallic and insulating samples.     

Magnetic properties of p-doped GaMnN diluted magnetic semiconductors containing clusters

Magnetic properties of p-doped GaMnN diluted magnetic semiconductors, having both randomly distributed Mn ions and Mn_xN_y clusters, are presented under the theory based on the hole-mediated ferromagnetism. The critical temperature of the second order phase transition between ferromagnetic and paramagnetic phases and the magnetization as a function of temperature are obtained from the free energy calculation. The Curie temperature of the p-doped GaMnN containing clusters depends not on the type of clusters but on the composition rate of clusters. The behavior of the spontaneous magnetization as a function of temperature is strongly affected by carrier concentration. The p-doped GaMnN diluted magnetic semiconductors containing clusters have room temperature ferromagnetism regardless of the magnetic type of clusters, as long as hole-mediated spin-spin interactions occur in them.     

Spin-polarized tunneling in ferromagnetic double barrier junctions

Spin-polarized tunneling in FMS/M/FMS double tunnel junctions where FMSs are ferromagnetic semiconductor layers and M is a metal spacer is studied theoretically within the single-site coherent potential approximation (CPA). The exchange interaction between a conduction electron and localized moment of the magnetic ion is treated in the framework of the s-f model. The spin polarization in the FMS layers is observed to oscillates as a function of the number of atomic planes in the spacer layer. Amplitude of these oscillations decreases with increasing the exchange interaction in FMS layers. Received 9 June 2001 and Received in final form 20 August 2001     

Annealing effect on tunneling magnetoresistance in MgO-based magnetic tunnel junctions with FeMn exchange-bias layer

MgO-based magnetic tunnel junctions were fabricated, with a thin pinned CoFeB layer in the unbalanced synthetic antiferromagnet part of the stack FeMn/CoFe/Ru/CoFeB. Inverted and normal tunneling magnetoresistance (TMR) values occur at low and high annealing temperatures (T_a), respectively. The TMR ratio remains inverted up to T_a=300 °C and it becomes normal around T_a=350 °C. The exchange bias of FeMn disappears at high T_a. The sign reversal of the TMR ratio is mainly attributed to the disappearance of the exchange bias due to manganese diffusion during the annealing process.     

Magnetic behavior of MnAs precipitates in Ga1−xMnxAs diluted magnetic semiconductor

Ferromagnetic Ga_1−xMn_xAs layers (where x≈4.7–5.5%) were grown on (1 0 0) GaAs substrates by molecular beam epitaxy. These p-type (Ga,Mn)As films were revealed to have a ferromagnetic structure and ferromagnetism is observed up to a Curie temperature of 318 K, which is ascribed to the presence of MnAs secondary magnetic phases within the film. It is highly likely that the phase segregation occurs due to the high Mn cell temperature around 890–920 °C, as it is well established that GaMnAs is unstable at such a high temperature. The MnAs precipitate in the samples with x≈4.7–5.5% has a Curie temperature T_c≈318 K, which was characterized from field-cooled and zero-field-cooled magnetization curves.     

Beating patterns in the oscillatory magnetoresistance of an AlGaN/GaN heterostructure

Magneto-transport measurements have been carried out on a modulation-doped Al_0.22Ga_0.78N/GaN heterostructure in a temperature range between 1.5 and 25 K with a rather high carrier density, 1.1×10¹³ cm⁻². Striking beating patterns in magnetoresistance vs magnetic field are observed in the vicinity of a special temperature. Theoretical simulation is performed and the comparison between numerical simulations and the experimental data reveals that the beating patterns are due to the interference of the magneto-intersubband scattering and the SdH oscillator of first subband.     

The effect of optically-induced random anisotropic disorder on a two-dimensional electron system

We have studied the effect of optically-induced random, anisotropic disorder on the magnetoresistance of a Al_0.3Ga_0.7As/ GaAs two-dimensional electron system by exposing the heterojunction to an asymmetric laser speckle pattern. Changes in the amplitude of the Shubnikov-de Haas oscillations can be explained in terms of easy and hard conductivity paths parallel and perpendicular to the long axis of the oval speckle grains. We also observe corresponding changes in the electron scattering rates.     

Spin-injection efficiency and magnetoresistance in a hybrid ferromagnetic-semiconductor trilayer with interfacial barriers

We present a self-consistent model of spin transport in a ferromagnetic (FM)-semiconductor (SC)-FM trilayer structure with interfacial barriers at the FM-SC boundaries. The SC layer consists of a highly doped n²⁺ AlGaAs-GaAs 2DEG while the interfacial resistance is modeled as delta potential (δ) barriers. The self-consistent scheme combines a ballistic model of spin-dependent transmission across the δ-barriers, and a drift-diffusion model within the bulk of the trilayer. The interfacial resistance (R_I) values of the two junctions were found to be asymmetric despite the symmetry of the trilayer structure. Transport characteristics such as the asymmetry in R_I, spin-injection efficiency and magnetoresistance (MR) are calculated as a function of bulk conductivity σ_s and spin-diffusion length (SDL) within the SC layer. In general a large σ_s tends to improve all three characteristics, while a long SDL improves the MR ratio but reduces the spin-injection efficiency. These trends may be explained in terms of conductivity mismatch and spin accumulation either at the interfacial zones or within the bulk of the SC layer.     

Optically induced magnetization in diluted magnetic quantum dots

We report the effect of intense laser field on donor impurities in a semimagnetic Cd_1-xinMn_xinTe/Cd_1-xoutMn_xoutTe quantum dot. The spin polaronic energy of different Mn²⁺ is evaluated for different dot radii using a mean field theory in the presence of laser field. Magnetization is calculated for various concentrations of Mn²⁺ ions with different dot sizes. Significant magnetization of Mn spins can be obtained through the formation of polarized exciton magnetic polarons (EMPs). A rapid decrease of the laser dressed donor ionization energy for different values of dot sizes with increasing field intensity is predicted. Also, it is found that the polarization of EMPs increases rapidly at higher excitation energies.     

Formation mechanism of ferromagnetism in Si1−xMnx diluted magnetic semiconductors

Si_1−xMn_x diluted magnetic semiconductor (DMS) bulks were formed by using an implantation and annealing method. Energy dispersive X-ray fluorescence, transmission electron microscopy (TEM), and double-crystal rocking X-ray diffraction (DCRXD) measurements showed that the grown materials were Si_1−xMn_x crystalline bulks. Hall effect measurements showed that annealed Si_1−xMn_x bulks were p-type semiconductors. The magnetization curve as a function of the magnetic field clearly showed that the ferromagnetism in the annealed Si_1−xMn_x bulks originated from the interaction between interstitial and substitutional Mn⁺ ions, which was confirmed by the DCRXD measurements. The magnetization curve as a function of the temperature showed that the ferromagnetic transition temperature was approximately 75 K. The present results can help to improve understanding of the formation mechanism of ferromagnetism in Si_1−xMn_x DMS bulks.     

Band-edge exciton transitions in (Ga1−xMnx)N diluted magnetic semiconductor films with above room temperature ferromagnetic transition

(Ga_1−xMn_x)N thin films grown on GaN buffer layers by using molecular beam epitaxy were investigated with the goal of producing diluted magnetic semiconductors (DMSs) with band-edge exciton transitions for applications in optomagnetic devices. The magnetization curve as a function of the magnetic field at 5 K indicated that ferromagnetism existed in the (Ga_1−xMn_x)N thin films, and the magnetization curve as a function of the temperature showed that the ferromagnetic transition temperature of the (Ga_1−xMn_x)N thin film was above room temperature. Photoluminescence and photoluminescence excitation spectra showed that band-edge exciton transitions in (Ga_1−xMn_x)N thin films appeared. These results indicate that the (Ga_1−xMn_x)N DMSs with a magnetic single phase hold promise for potential applications in spin optoelectronic devices in the blue region of the spectrum.