Effect of Bi2O3 content on physical and optical properties of 15Li2O-15K2O-xBi2O3-(65−x) B2O3: 5V2O5 glass system

Multi-component bismuth borate glasses doped with vanadium ions 15Li₂O-15K₂O-xBi₂O₃-(65−x) B₂O₃: 5V₂O_5, (x=3, 5, 7, 10, 12 and 15) have been prepared using conventional melt quench technique. Characterization of the prepared glasses has been done using X-ray diffraction, differential scanning calorimetry and density measurements. The effect of Bi₂O₃ content on the optical properties of the present glass system is studied from the optical absorption spectra recorded in the wavelength range 200-800 nm. The fundamental absorption edge has been identified from the optical absorption spectra. The values of optical band gap for indirect allowed transitions have been determined using available theories. The origin of the Urbach energy is associated with the phonon-assisted indirect transitions. The density and molar volume studies indicate that Bi₂O₃ in these glasses is acting partly as network modifier and partly as network former. The variations in the optical band gap energies, density and molar volume with Bi₂O₃ content have been discussed in terms of changes in the glass structure. Values of the theoretical optical basicity, average crosslink density and the average electronic polarizability are also reported.     

Study on the electronic structure and optical properties of different Al constituent Ga1−xAlxAs

Using quantum mechanics GASTEP software package based on the first principle density function theory, the electronic structure and optical properties of Ga_1−xAl_xAs at different Al constituent are calculated. Result shows that with the increase of Al constituent, the band gap of Ga_1−xAl_xAs increases and varies from direct band gap to indirect band gap; the absorption band edge and the absorption peak move to high-energy side; the static reflectivity decreases. With the increasing of the incident photon energy, Ga_1−xAl_xAs shows metal reflective properties in certain energy range. With the increasing of Al constituent, static dielectric constant decreases and the intersection of dielectric function and the x-axis move towards high-energy side; the peak of energy loss function move to low-energy side and the peak value reduces.     

Fine structure in the absorption edge spectrum of NbS2Y2 (Y = Cl,Br, I)

High resolution absorption spectra of single crystals of NbS₂Y₂ (Y = Cl, Br, I), obtained at temperatures between 4.2 and 300 K revealed extensive fine structure in the absorption edge. This structure has been analysed and interpreted in terms of allowed indirect interband transitions, involving phonons corresponding to SS and NbS vibrations, followed by forbidden and by allowed direct transitions. From the shape of the absorption curve associated with the phonon branches of the indirect transitions a binding energy of 23 cm^? for indirect excitons is obtained. A binding energy of 28 cm^? for direct excitons is deduced from the exciton lines observed at the long-wavelength side of the direct transitions. A detailed interpretation of the optical transitions is given in terms of a molecular orbital diagram for the Nb₂S₄ clusters, present in these crystals.     

Fundamental band edge optical absorption in Bi<Subscript>0.5</Subscript>Sb<Subscript>1.5</Subscript>Te<Subscript>3</Subscript>

Spectra of optical absorption in Bi_0.5Sb_1.5Te₃ films grown on mica and KBr substrates have been investigated for T = 145 and 300 K. The data obtained have been analyzed together with the data of investigations on the fundamental absorption edge for Bi₂Te₃ available in the scientific literature. It has been revealed that the interband absorption spectra for both Bi_0.5Sb_1.5Te₃ and Bi₂Te₃ represent a superposition of two components corresponding to direct and indirect allowed optical transitions. In this case, the least energy gap separating the valence band and the conduction band is direct for Bi_2−xSb_xTe₃ (x ≤ 1.5, T = 300 K). For Bi_0.5Sb_1.5Te₃ the temperature variation rates have been estimated for the thresholds of direct and indirect interband transitions. It has been shown that this solid solution is direct gap solution at T ≥ 145 K. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 50–52, July, 2008.     

On the concentration dependence of the direct and indirect band gaps of substitutional GaPxAs1−x alloys

The variation of the direct and indirect band gaps of the substitutional GaP_xAs_1?x alloy with concentration has been studied by the KKRZ-ATA method. It is found that the gaps plotted against concentrations have little bowing on the low concentration side of GaP. This bowing has been discussed in the light of existing theoretical and experimental results.     

Mixed alkali effect in borate glasses—EPR and optical absorption studies in xNa2O–(30−x)K2O–70B2O3 glasses doped with Mn2+

The mixed alkali borate xNa₂O–(30−x)K₂O–70B₂O₃ (5≤x≤25) glasses doped with 1 mol% of manganese ions were investigated using EPR and optical absorption techniques as a function of alkali content to look for ‘mixed alkali effect’ (MAE) on the spectral properties of the glasses. The EPR spectra of all the investigated samples exhibit resonance signals which are characteristic of the Mn²⁺ ions. The resonance signal at g≅2.02 exhibits a six line hyperfine structure. In addition to this, a prominent peak with g≅4.64, with a shoulder around g≅4.05 and 2.98, was also observed. From the observed EPR spectrum, the spin-Hamiltonian parameters g and A have been evaluated. It is interesting to note that some of the EPR parameters do show MAE. It is found that the ionic character increases with x and reaches a maximum around x=20 and thereafter it decreases showing the MAE. The number of spins participating in resonance (N) at g≅2.02 decreases with x and reaches a minimum around x=20 and thereafter it increases showing the MAE. It is also observed that the zero-field splitting parameter (D) increases with x, reaches a maximum around x=15 and thereafter decreases showing the MAE. The optical absorption spectrum exhibits a broad band around ∼20,000 cm⁻¹ which has been assigned to the transition ⁶A_1g(S)→⁴T_1g(G). From ultraviolet absorption edges, the optical bandgap energies and Urbach energies were evaluated. It is interesting to note that the Urbach energies for these glasses decrease with x and reach a minimum around x=15. The optical band gaps obtained in the present work lie in the range 3.28–3.40 eV for both the direct and indirect transitions. The physical parameters of all the glasses were also evaluated with respect to the composition.     

Optical properties of TlGaxIn1-xSe2-layered mixed crystals (0.5 ≤ x ≤ 1) by spectroscopic ellipsometry,transmission, and reflection measurements

The layered semiconducting TlGa_xIn_1-xSe₂-mixed crystals (0.5?≤?x?≤?1) were studied for the first time by spectroscopic ellipsometry measurements in the 1.2–6.2?eV spectral range at room temperature. The spectral dependence of the components of the complex dielectric function, refractive index, and extinction coefficient were revealed using an optical model. The interband transition energies in the studied samples were found from the analysis of the second-energy derivative spectra of the complex dielectric function. The effect of the isomorphic cation substitution (indium for gallium) on critical point energies in TlGa_xIn_1-xSe₂ crystals was established. Moreover, the absorption edge of TlGa_xIn_1-xSe₂ crystals have been studied through the transmission and reflection measurements in the wavelength range of 500–1100?nm. The analysis of absorption data revealed the presence of both optical indirect and direct transitions. It was found that the energy band gaps decrease with the increase of indium content in the studied crystals.     

Intraband transitions in magnetoexcitons in coupled double quantum wells

A theory of far-infrared (FIR) magneto-optical intraband s→p ^± transitions of direct and indirect excitons in semiconductor coupled double quantum wells has been developed. The case of symmetric strained In_xGa_1−x As/GaAs quantum wells with nondegenerate valence band in the regime of both narrow and wide barriers has been analyzed. The energies and dipole matrix elements of transitions between the ground s and excited p ^± states in a quantizing magnetic field B>2 T and electric field ℰ perpendicular to the quantum well plane have been studied. The regimes of direct (in a weak electric field) and indirect (in a strong electric field) transitions, and the transition between the direct and indirect regimes, have been investigated. Zh. éksp. Teor. Fiz. 113, 1446–1459 (April 1998)     

Optical coefficients of Hg1 − x − y Cd x Eu y Se crystals

Optical properties of Hg_{1 ? x ? y} Cd _x Eu _y Se crystals grown by the Bridgman method have been investigated based on the independent reflectance and transmittance measurements, which were performed on a Nicolet 6700 spectrometer at T = 300 K in the wavelength range 0.9 ≤ λ ≤ 26.6 μm. The values of refractive index n, absorption index k, and absorption coefficient α have been determined for the crystals studied. Based on the dependences α = f(hν), the presence of direct allowed interband optical transitions in the crystals is established and the band-gap values are determined. The influence of temperature on the transmittance and band gap are investigated in the range T = 114–300 K.     

Electronic Raman scattering from inter-valence band transition in photo-excited GaP and GaAs1−xPx crystals

Raman scattering from photo-created free carriers in undoped GaP and GaAs_1?xP_x (x = 0.85, 0.73 and 0.66) under high excitation intensity has been studied. Two new Raman bands have been observed and assigned to electronic transitions from the split-off hole band to the heavy hole band and from the light hole band to the heavy hole band. The spin-orbit splitting energies in these crystals have been determined from the analysis of observed Raman bands, and compared with other experimental values.     

Combinatorial synthesis and optical characterization of alloy and superlattice films based on SrTiO3 and LaAlO3

We have grown alloy and superlattice films consisting of SrTiO₃ (STO) and LaAlO₃ (LAO) by pulsed laser deposition using composition-spread technique. All the (STO)_x(LAO)_1−x (0 ≤ x ≤ 1) alloy and superlattice films exhibited a single-phase perovskite structure. The optical properties of these films were characterized by absorption spectroscopy at room temperature. The spectra show a broad absorption due to O 2p-Ti 3d(t_2g) transition in an ultraviolet region. We found that absorption edges of both alloy and superlattice films systematically shifted to higher energy with increasing LAO composition. Clear difference was observed in the composition dependence of the indirect and a direct band edges.     

Fundamental reflection spectrum and the electronic band structure of chlorine-doped CdTe

The effect of chlorine impurity on the fundamental reflection spectrum and the electronic band structure of cadmium telluride crystals has been studied. At the impurity concentration N _Cl>5.0×10¹⁹ cm^?3, a peak appears in the reflectance spectra. This peak is due to electron transitions at the X point of the Brillouin zone from the upper split valence band to Cl levels lying 0.05 eV above the Γ minimum of the conduction band. The other features in the reflectance spectra and band structure are explained as being due to the effect of spin-orbit splitting at the X point and to indirect electronic transitions from the Cl levels to the Γ minimum.     

Optical band gap studies and estimation of two photon absorption coefficient in alkali bismuth borate glasses

The optical absorption spectra of the glasses with composition xBi₂O₃·(30???x)R₂O·70B₂O₃ (R?Li, Na, K) and xBi₂O₃·(70???x)B₂O₃·30Li₂O (0?≤?x?≤?20) have been recorded in the wavelength range 350–650?nm. The glass samples were prepared by the normal melt–quench technique. The fundamental absorption edge for all the series of glasses is analyzed using the theory of Davis and Mott. The position of absorption edges and the values of optical band gap are dependent on the mol% of Bi₂O₃. The absorption in these glasses is associated with indirect transitions. The values of Urbach's energy and band tailing parameters are reported. The two photon absorption coefficient, β, in these glasses has also been estimated from the optical band gap and its value ranges from 1.3 to 11.6?cm/GW. The relationship between β and glass composition has also been discussed in terms of the electronic structure of the glass system.     

Exciton absorption,photoluminescence and band structure of N-Free and N-DOPED In1−xGaxP

Optical absorption data on In_1?xGa_xP are reported showing the first observation of the exciton absorption peak in a III-V ternary alloy. This allows the most accurate determination to date of both the composition dependence of the Γ band gap and the position of the Γ ? X crossover (x_c = 0.72, 77°K; x_c = 0.73, 300°K). Absorptio and photoluminescence spectra are compared for both direct and indirect In_1?xGa_xP. In addition, absorption, photoluminescence, and luminescence lifetimes of In_1?xGa_xP:N are examined. These data suggest that the A-line is perturbed by alloy disorder and forms a broad luminescence band for x ? 0.94. The observed Stokes shift for the N-trap in the alloy is characteristic of an impurity strongly coupled to the lattice. The temperature dependence of the N luminescence band is found to be well described by the conventional configuration-coordinate model for phonon-coupled impurity luminescence. Implications of these results for light emitting devices are mentioned.     

Electronic band structure and optical absorption of nanotubular zinc oxide doped with Iron, Cobalt, or Copper

The absorption spectra of the precursor-derived solid solutions Zn_{1 ? x} M _x O (M = Fe, Co, Cu) with a tubular morphology of aggregates have been investigated in the ultraviolet and visible regions. The maximum metal concentration x in the Zn_{1 ? x} M _x O solid solutions is 0.075 for iron, 0.2 for cobalt, and 0.1 for copper. It has been found that the optical absorption and the band gap of the Zn_{1 ? x} M _x O compounds depend on the type of dopant. The obtained experimental data have been interpreted using the results of the performed ab initio calculations of the electronic band structure and optical absorption.     

Effect of Ga addition on optical properties of crystalline Ga20Se80 system

Ga_xSe_100−x (20 ≤ x ≤ 50) in polycrystalline form was prepared by direct fusion of stoichiometric proportions of pure elements. The spectral behavior of transmittance (T) and the reflectance (R) in the wavelength range 400–2500 nm for all films of different thicknesses were measured to obtain different optical parameters (refractive index, n, and absorption index, k). The study of inter-band transitions indicates that the existence of direct forbidden transitions and indirect forbidden transitions with energy gaps decrease with increasing Ga percentage.     

Electronic band structure, optical absorption, and photocatalytic activity of iron-doped anatase

Quasi-one-dimensional solid solutions of the composition Ti_{1 ? x} Fe _x O_{2 ? x/2} (0.005 ≤ x ≤ 0.050) with the anatase-type structure and extended aggregates have been prepared by the precursor method. The absorption spectra of the solid solutions have been investigated in the ultraviolet and visible regions, and the photocatalytic activity in the oxidation reaction of hydroquinone in water has been estimated. It has been found that the synthesized solid solutions serve as photocatalysts only under ultraviolet irradiation, and their photoactivity increases with an increase in the dopant concentration. The first-principles calculations of the electronic band structure and optical absorption in iron-doped anatase and rutile have been performed using the pseudopotential method LSDA + U (with the VASP software package). The on-site exchange-correlation parameters have been calibrated in the calculations of the electronic band structure of hematite α-Fe₂O₃ and ilmenite FeTiO₃. It has been shown that, despite the appearance of impurity states within the band gap of anatase and rutile, doping with iron does not cause substantial absorption in the visible region, which correlates with the increase in photocatalytic activity only under ultraviolet irradiation. The most probable cause of the experimentally observed absorption in the visible region is the presence of finely dispersed hematite impurities in the obtained samples.     

Modulation of direct and indirect gaps in piezotransmission experiments

Piezomodulation spectroscopy of direct and indirect transitions in GaAs_1-xP_x is investigated. It is shown that, due to the different values of the deformation potential of the Γ_1c and X_1c minima, the strain induced modulation of these transitions are out of phase.     

Influence of composition on electrical and optical properties of new chalcogenide thin films from Ge-Se-Tl system

Bulk Ge₂₀Se_80−xTl_x (x ranging from 0 to 15 at%) chalcogenide glasses were prepared by conventional melt quenching technique. Thin films of these compositions were prepared by thermal evaporation, on glass and Si wafer substrates at a base pressure of 10⁻⁶ Torr. X-ray diffraction studies were performed to investigate the structure of the thin films. The absence of any sharp peaks in the X-ray diffractogram confirms that the films are amorphous in nature. The optical constants (absorption coefficient, optical band gap, extinction coefficient and refractive index) of Ge₂₀Se_80−xTl_x thin films are determined by absorption and reflectance measurements in a wavelength range of 400-900 nm. In order to determine the optical gap, the absorption spectra of films with different Tl contents were analyzed. The absorption data revealed the existence of allowed indirect transitions. The optical band gap showed a sharp decrease from 2.06 to 1.79 eV as the Tl content increased from 0% to 15%. It has been found that the values of absorption coefficient and refractive index increase while the extinction coefficient decreases with increase in Tl content in the Ge-Se system. These results are interpreted in terms of the change in concentration of localized states due to the shift in Fermi level. DC electrical conductivity of Ge₂₀Se_80−xTl_x thin films was carried out in a temperature range 293-393 K. The electrical activation energy of these films was determined by investigating the temperature dependence of dc conductivity. A decrease in the electrical activation energy from 0.91 to 0.55 eV was observed as the Tl content was increased up to 15 at% in Ge₂₀Se_80−xTl_x system. On the basis of pre-exponential factor, it is suggested that the conduction is due to thermally assisted tunneling of the carriers in the localized states near the band edges.     

Synthesis and optical properties of basic fuchsin dye-doped PMMA polymeric films for laser applications: wide scale absorption band

Basic fuchsin dye-doped poly(methyl methacrylate) polymeric films were sensitized with various dye concentrations ranging from 0.0833 to 1.667 wt% of basic fuchsin. Their structure, linear absorption, and optical limiting properties were examined. The films were prepared using a simple and fast casting technique dissolved in chloroform for both the dye and the polymer. Structural characterizations were achieved by XRD, and the films showed an amorphous hump supporting the noncrystalline structure of studied polymeric composites. Spectrophotometer measurements were used to estimate the spectral absorption measurements of the films such as transmittance, absorbance with the calculations of absorption index (k), and optical energy band gap (E _g ) in the wavelength region from 190 to 2500 nm. Results show that the optical constants change with increasing the dye doping concentrations. It has been found that optical energy gap (E _g ) appearing that, both direct and indirect optical transitions are conceivable for these films. Optical limiting properties of the films with various dye concentrations were studied using a continuous wave He–Ne laser operating at 632.8 nm. The results appeared that the sample has an obvious optical limiting effect. The designed BF/PMMA composites can be applicable in wide-scale applications.