Adsorption of naphthalene and pyrene from isooctane solutions on commercial activated carbons

The adsorption of naphthalene and pyrene on two different types of commercial activated carbons was studied by batch and column experiments. Adsorption equilibrium was measured at three different temperatures. Heats of adsorption were estimated from the equilibrium results and compared to other previous reports. From the column experiments, using parameters obtained from the batch experiments and literature correlations, effective surface diffusivities were estimated for naphthalene and pyrene on both adsorbents in different feed concentrations. The corrected diffusivities, using Darken equation, appear to be almost constant for naphthalene (ca. 1.3⋅10⁻⁸ cm²/min), and for pyrene (ca. 2.3⋅10⁻¹⁰ cm²/min), in both activated carbons.     

AFM,ellipsometry, XPS and TEM on ultra-thin oxide/polymer nanocomposite layers in organic thin film transistors

Here we report on the fabrication and characterization of ultra-thin nanocomposite layers used as gate dielectric in low-voltage and high-performance flexible organic thin film transistors (oTFTs). Reactive sputtered zirconia layers were deposited with low thermal exposure of the substrate and the resulting porous oxide films with high leakage currents were spin-coated with an additional layer of poly-α-methylstyrene (PαMS). After this treatment a strong improvement of the oTFT performance could be observed; leakage currents could be eliminated almost completely. In ellipsometric studies a higher refractive index of the ZrO₂/PαMS layers compared to the “as sputtered” zirconia films could be detected without a significant enhancement of the film thickness. Atomic force microscopy (AFM) measurements of the surface topography clearly showed a surface smoothing after the PαMS coating. Further studies with X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) also indicated that the polymer definitely did not form an extra layer. The polymer chains rather (self-)assemble in the nano-scaled interspaces of the porous oxide film giving an oxide–polymer “nanocomposite” with a high oxide filling grade resulting in high dielectric constants larger than 15. The dielectric strength of more than 1 MV cm⁻¹ is in good accordance with the polymer-filled interspaces.     

Spectroscopic studies of the electron donor-acceptor interactions of aromatic hydrocarbons with tetrachlorophthalic anhydride

Electron donor-acceptor (EDA) interactions of tetrachlorophthalic anhydride (TCPA) with benzene,p-xylene, mesitylene, fluorene,t-stilbene and pyrene have been investigated by spectroscopic technique. The spectroscopic and thermodynamic parameters of the complexes formed are reported. The enthalpies of formation range between 0.2 to 5.0 kcal mole⁻¹. Among all the donors studied, pyrene appears to be the strongest electron donor towards tetrachlorophthalic anhydride.     

Preparation and dielectric properties of highly preferred-(100) orientation (Pb,La)(Zr,Ti)O<Subscript>3</Subscript> antiferroelectric thick films by sol–gel processing

Pb_0.97La_0.02Zr_0.95Ti_0.05O₃ (PLZT) antiferroelectric thick films of highly preferred-(100) orientation with different thickness were successfully deposited on Pt(111)/Ti/SiO₂/Si(100) substrates depending on the sol–gel process technique. The effects of the PLZT thick films in the preparation and electric properties are investigated. The films show polycrystalline perovskite structure with a (100) preferred orientation by X-ray diffractometer analyses. The antiferroelectric nature of the thick films is demonstrated by P (polarization)–E (electric field). The temperature dependence of the dielectric constant and dielectric loss displays the similar behavior in both cases at 100 kHz while the values of polarization characteristic are decreased with the increase of the film thickness. The phase switching current are studied as a function of a gradually change dc electric field and the voltage dependent current density of the most highly (100)-oriented PLZT film is 1.49 × 10⁻⁸ A/cm² over electric field range from 0 to ±261 kV/cm. The film at 2,498 nm exhibits excellent dielectric properties and highly preferred-(100) orientation.     

Cathodoluminescence Depth Profiling in SiO2:Ge Layers

 For investigation of the luminescent center profile cathodoluminescence measurements are used under variation of the primary electron energy E ₀ = 2…30 keV. Applying a constant incident power regime (E ₀·I ₀ = const), the depth profiles of luminescent centers are deduced from the range of the electron energy transfer profiles dE/dx. Thermally grown SiO₂ layers of thickness d = 500 nm have been implanted by Ge⁺-ions of energy 350 keV and doses (0.5–5)10¹⁶ ions/cm². Thus Ge profiles with a concentration maximum of (0.4 – 4) at% at the depth of d_m≅240 nm are expected. Afterwards the layers have been partially annealed up to T _a = 1100 °C for one hour in dry nitrogen. After thermal annealing, not only the typical violet luminescence (λ = 400 nm) of the Ge centers is strongly increased but also the luminescent center profiles are shifted from about 250 nm to 170 nm depth towards the surface. This process should be described by Ge diffusion processes, precipitation and finally Ge nanocluster formation. Additionally, a Ge surface layer is piled-up extending to a depth of roughly 25 nm.     

Impedance studies on the 5-V cathode material,LiCoPO<Subscript>4</Subscript>

Olivine-structured LiCoPO₄ is synthesized by a Pechini-type polymer precursor method. The structure and the morphology of the compounds are studied by the Rietveld-refined X-ray diffraction, scanning electron microscopy, Brunauer, Emmett, and Teller surface area technique, infrared spectroscopy, and Raman spectroscopy techniques, respectively. The ionic conductivity (σ ionic), dielectric, and electric modulus properties of LiCoPO₄ are investigated on sintered pellets by impedance spectroscopy in the temperature range, 27–50 °C. The σ (ionic) values at 27 and 50 °C are 8.8 × 10⁻⁸ and 49 × 10⁻⁸ S cm⁻¹, respectively with an energy of activation (E _a) = 0.43 eV. The electric modulus studies suggest the presence of non-Debye type of relaxation. Preliminary charge–discharge cycling data are presented.     

On the Origin of the Heterogeneous Emission from Pyrene Sequestered Within Tetramethylorthosilicate-Based Xerogels: A Decay-Associated Spectra and O2 Quenching Study

Steady-state and time-resolved fluorescence spectroscopy are used to determine the local microheterogeneity surrounding pyrene molecules sequestered within tetramethylorthosilicate-derived xerogels. After compensation for the intrinsic background emission from the xerogel, we find that the pyrene intensity decay kinetics are best described by a two-term rate law. This is consistent with the pyrene molecules distributing primarily into two microenvironments. Under ambient conditions, the individual pyrene microenvironments exhibit excited-state fluorescence lifetimes that differ by 100 ns. However, the pyrene I₁ to I₃ band ratios that are associated with each microenvironment are statistically equivalent to one another. These results show that the local dipolarity surrounding these pyrene microenvironments are similar, but the decay rates associated with each microenvironment are very different. The longer-lived pyrene species (Environment #1) constitutes 1/2 of the total fluorescence and it exhibits an O₂ quenching sensitivity (K_sv1) of (5.19 ± 0.52 × 10^–3 %O₂ ^–1 and a bimolecular quenching constant (k_q1) of (2.30 ± 0.23) × 10⁴ %O₂ ^–1 s^–1. Environment #2, associated with the shorter-lived pyrene species, exhibits an O₂ quenching sensitivity (K_sv2) of (2.31 ± 0.16) × 10^–2 %O₂ ^–1 and a bimolecular quenching constant (k_q2) of (2.11 ± 0.23) × 10⁵ %O₂ ^–1 s^–1. These results are interpreted as follows: Environment #1 consists of pyrene molecules sequestered within a relatively rigid siloxane network wherein non-radiative decay pathways are lessened, but these pyrene molecules are not quenched readily by O₂. Environment #2 consists of pyrene molecules adsorbed onto surface silanols within the xerogel. These pyrene molecules are quenched by the silanols and they are simultaneously more accessible to O₂ compared to Environment #1.     

Dielectric properties and I-V characteristics of (Pb<Subscript>0.4</Subscript>Sr<Subscript>0.6</Subscript>)TiO<Subscript>3</Subscript> thin films improved by TiO<Subscript>2</Subscript> buffer layers

A TiO₂ thin buffer layer was introduced between the (Pb_0.4Sr_0.6)TiO₃ (PST) film and the Pt/Ti/SiO₂/Si substrate in an attempt to improve their electrical properties. Both TiO₂ and PST layers were prepared by a chemical solution deposition method. It was found that the TiO₂ buffer layer increased the (100)/(001) preferred orientation of PST and decreased the surface roughness of the films, leading to an enhancement in electrical properties including an increase in dielectric constant and in its tunability by DC voltage, as well as a decrease in dielectric loss and leakage current density. At an optimized thickness of the TiO₂ buffer layer deposited using 0.02 mol/l TiO₂ sol, the 330-nm-thick PST films had a dielectric constant, loss and tunability of 1126, 0.044 and 60.7% at 10 kHz, respectively, while the leakage current density was 1.95 × 10⁻⁶ A/cm² at 100 kV/cm.     

The influence of electronic irradiation of tin on its oxidation

The kinetics of tin oxidation was studied using Auger spectroscopy and characteristic electron energy loss spectroscopy. Studies were performed with continuous electron irradiation (E _p = 1800 eV) and without it depending on exposition in oxygen medium at a 10⁻⁶ torr partial oxygen pressure and room temperature (maximum exposure in oxygen was 3000 Langmuir). Exposition to oxygen at 3000 L was shown to cause the formation of a continuous SnO₂ oxide layer, whereas electron irradiation with the same exposition stimulated the growth of a layer predominantly containing SnO.     

Low-temperature processing of sol-gel derived Pb(Zr,Ti)O<Subscript>3</Subscript> thick films using CO<Subscript>2</Subscript> laser annealing

Fabrication of ferroelectric Pb(Zr_0.52Ti_0.48)O₃ (PZT) thick films on a Pt/Ti/SiO₂/Si substrate using powder-mixing sol-gel spin coating and continuous wave CO₂ laser annealing technique to treat the specimens with at a relatively low temperature was investigated in the present work. PZT fine powders were prepared by drying and pyrolysis of sol-gel solutions and calcined at temperatures from 400 to 750°C. After fine powder-containing sol-gel solutions were spin-coated on a substrate and pyrolyzed, CO₂ laser annealing was carried out to heat treat the specimens. The results show that laser annealing provides an extremely efficient way to crystallize the materials, but an amorphous phase may also form in the case of overheating. Thicker films absorb laser energy more effectively and therefore melt at shorter periods, implying a significant volume effect. A film with thickness of 1 μm shows cracks and rough surface morphology and it was difficult to obtain acceptable electrical properties, indicating importance of controlling interfacial stress and choosing appropriate size of the mixing powders. On the other hand, a thick film of 5 μm annealed at 100 W/cm² for 15 s exhibits excellent properties (P _r = 36.1 μC/cm², E _c = 19.66 kV/cm). Films of 10 μm form a melting zone at the surface and a non-crystallized bottom layer easily at an energy density of 100 W/cm², showing poor electrical properties. Besides, porosity and electrical properties of thick films can be controlled using appropriate processing parameters, suggesting that CO₂ laser annealing of modified sol-gel films is suitable for fabricating films of low dielectric constants and high crystallinity.     

Comparative Analysis of a Solar Control Coating on Glass by AES, EPMA, SNMS and SIMS

 A solar control coating was analysed by different methods of surface analysis with respect to the layer sequence and the composition and thickness of each sublayer. The methods used for depth profiling were Auger electron spectroscopy, electron probe microanalysis, secondary neutral mass spectroscopy and secondary ion mass spectroscopy based on MCs⁺. The structure of the coating was unknown at first. All methods found a system of two metallic Ag layers, embedded between dielectric SnO_X layers. Additionally, thin Ni-Cr layers of 1–2 nm were detected on top of the Ag layers. Thus the detected layer sequence is SnO_X/Ni-Cr/Ag/SnO_X/Ni-Cr/Ag/SnO_X/glass. The Ni:Cr ratio in the nm-thin layers could be quantified by every method, the Cr fraction corresponding to less than one monolayer. We compare the capabilities and limitations of each method in routinely investigating this solar control coating. Importance was attached to an effective investigation. Nevertheless, by combining all methods, measuring artefacts could be uncovered and a comprehensive characterisation of the system was obtained.     

A solid-contact Pb2+-selective polymeric membrane electrode with Nafion-doped poly(pyrrole) as ion-to-electron transducer

Conducting polymer poly(pyrrole) (PPy) doped with Nafion was successfully used as ion-to-electron transducer in the construction of a solid-contact Pb²⁺-selective polymeric membrane electrode. The Nafion dopant can effectively increase the capacitance of the conducting polymer and improve the mechanical robustness of the coating. The transducer layer, PPy-Nafion, characterized by cyclic voltammetry and electrochemical impedance spectroscopy, exhibits a sufficiently high bulk (redox) capacitance and fast ion and electron transport process. The new Pb²⁺-selective polymeric membrane electrode, based on PPy-Nafion film as solid contact, shows stable Nernstian characteristics in Pb(NO₃)₂ solution within the concentration range of 1.0 × 10⁻⁷–1.0 × 10⁻³ M, and the detection limit is 4.3 × 10⁻⁸ M. The potential stability of the electrode and the influence of the interfacial water layer were also evaluated by chronopotentiometry and potentiometric water layer test, respectively. The results show that the solid-contact Pb²⁺-selective electrode, based on PPy-Nafion film as ion-to-electron transducer, can effectively overcome the potential drift and reduce the water layer between the PPy-Nafion transducer layer and the ion-selective membrane.     

1-(Bromoacetyl)pyrene,a novel photoinitiator for the copolymerization of styrene and acrylonitrile

A comparative study on photoinitiated solution copolymerization of Styrene (Sty), with acrylonitrile (AN) using pyrene, 1-acetylpyrene, and 1-(bromoacetyl)pyrene (BrPy) as initiators, showed that the introduction of a chromophoric moiety, bromoacetyl (–COCH₂Br), significantly increased the photoinitiating ability of pyrene. The kinetics and mechanism of copolymerization of Sty with AN (Sty–co–AN) using BrPy as photoinitiator has been studied in detail. The kinetic data, inhibiting effect of benzoquinone, and electron spin resonance (ESR) studies suggest that the polymerization proceeds via a free radical mechanism. The system followed non-ideal kinetics (R _p α[BrPy]^0.7[Sty]^1.09[AN]^1.01) and degradative solvent transfer reasonably explained these kinetic non-idealities. The co-monomer reactivity ratios calculated by using the Finemann–Ross and Kelen–Tudos models were r ₁ (Sty) = 0.39 and r ₂ (AN) = 0.05. The reactivity ratios strongly indicate that the two monomers enter in almost alternating arrangement along the copolymer chain.     

Dependence of the magnetic properties of MnGaN epitaxial layers on external electrical field

Investigation of the magnetic properties of MnGaN epitaxial layers as a function of external electrical field was performed on the basis of field effect structure. The structure included substrate of n-type GaN, epitaxial layer of n-type Mn_xGa_1-xN, dielectric layer and metal layer acting as field effect device gate. Each Mn atom in Mn_xGa_1-xN contributes 4 net spins due to the electrons occupying energy levels ⁴F, ⁴D, ⁴P and ⁴G belonging to 3d orbital, and these levels are in the energy band gap and in the top of the valence band of Mn_xGa_1-xN. The position of the Fermi level is determined to be in the energy band gap of the layer of GaN and to be above the level 4F in the layer of Mn_xGa_1-xN. In this way application of external negative voltage on the gate causes change in the number of electrons contributing net spins and the saturation magnetization M_sat of Mn_xGa_1-xN changes as well. It was found that M_sat changes in the range 1.15 × 10⁻³–0.7 × 10⁻³ A μm⁻¹ if the external voltage changes in the interval 0–−5V. The application of this structure for the design of spintronic devices is discussed in this paper.      

A High-Efficiency Double Surface Discharge and Its Application to Ozone Synthesis

Surface discharge with the flat plate configuration tends to generate a uniform and high-density plasma during ozone synthesis, but suffers from relatively low energy yield at high ozone concentration. Here we report that a double surface discharge reactor can produce, at the same input power, two uniform plasma zones that locate two sides of the thin dielectric layer simultaneously, which results in a high ozone energy yield at high ozone concentration. Discharge characteristics confirm that reducing dielectric thickness and discharge gap favors the achievement of high plasma-density and energy efficiency. The optical emission spectroscopy diagnosis suggests that the double surface discharge with thinner dielectric thickness and narrower discharge gap possesses much higher electron density, as well as higher excitation temperature and low rotational temperature, which is responsible for the excellent performance in ozone synthesis. The optimal parameters of 0.25 mm dielectric thickness and 2 mm discharge gap enable ozone synthesis to proceed with an energy yield of 295.2–108.7 g/kWh at ozone concentration of 11.1–48.3 g/Nm³ and exhibit a good stability during a 4-h test. This performance surpasses the performance of many other typical discharge processes for ozone synthesis.     

PMMA-SiO<Subscript>2</Subscript> organic–inorganic hybrid films: determination of dielectric characteristics

Organic–inorganic hybrid thin films have been prepared by a modified sol–gel route using tetraethyl orthosilicate as the inorganic (silica) source, methyl methacrylate (MMA) as the organic source, and 3-trimetoxysilylpropyl methacrylate as the coupling agent. The films were prepared by spin coating on Si (100) p-type substrates and subsequently heat-treated at 90 °C. Fourier transform infrared results reveal a set of absorption bands associated with the formation of both PMMA and SiO₂ phases in the hybrid films. Capacitance–voltage (C–V) characterization was carried out on metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) structures, with the hybrid films as the insulator layer to evaluate the electrical properties. We present a detailed comparative analysis of the dielectric constant obtained from C–V characterization in the frequency range of 1 kHz–1 MHz. For the PMMA-SiO₂ hybrid material the dielectric constant values obtained were around 9.5 at 1 MHz which is superior to the values reported for thermally grown SiO₂ and pure PMMA materials. The interface state density for PMMA-SiO₂ on Si was approximately 10¹⁰ cm⁻², which is comparable to the standard SiO₂/Si structures. Due to the electrical behavior and low processing temperatures this hybrid dielectric is a very promising candidate for flexible electronic devices and its subsequent implementation does not require complex equipment.     

Solubilization of styrene in the catanionic system dodecyltrimethylammonium hydroxide–n′-dodecanephosphonic acid

 The solubilization of styrene in micelles of the catanionic surfactant dodecyltrimethylammonium hydroxide (DTAOH)–n-dodecane-phosphonic acid (DPA) was studied by UV–Vis. spectrometry, as a function of the DTAOH:DPA proportion in the surfactant mixture. The styrene molecules are adsorbed at the surface of the micelles, with the vinyl group closer to the hydrocarbon core than the aromatic ring, which is oriented to the water. In micelles with an excess of DTAOH, the dielectric constant of the water surrounding the micelles was strongly affected by the non-neutralized –N(CH₃)⁺ ₃ groups at the Stem layer. In micelles with an excess of DPA, the –PO₃H₂ groups which are not neutralized by –N(CH₃)⁺ ₃, remain almost unionized and hydrogen-bonded. The effect of the micellar surface on the surrounding water dielectric constant dropped sharply. The dielectric constant in the hydrogen-bonded polar layer is ∼65, rising to the value of pure water very close to the micellar surface. Received: 2 September 1997 Accepted: 20 October 1997     

Quantum-chemical study of the molecular forms of vanillin

Equilibrium structural parameters, dipole moments, relative energies, vibration spectra, and ionization potentials of various conformers of benzoid (B), p- and o-quinoid (Q), and deprotonated anionic forms of vanillin in a vacuum and in a polarizable medium with dielectric properties of water were calculated by the quantum-chemical method (U)B3LYP/cc-pVTZ. The intramolecular hydrogen bond in free vanillin benzoid molecule B1 is characterized by the energy of 4 kcal mol⁻¹ and by the barrier of cleavage 8 kcal mol⁻¹ that correspond to the conformational transition B1 → B2. The energy of the optimal p-quinoid conformer (Q1) is 22 kcal mol⁻¹ larger than the energy of B1 in a vacuum and 15 kcal mol⁻¹ in water. The p-quinoid forms greatly exceeds the benzoid forms by dipole moment, electrophilicity, and nucleophilicity. The structure calculated for the anion is intermediate between benzoid and p-quinoid forms, and the calculated energy of polarization stabilization in water is 57 kcal mol⁻¹.     

Kinetics of oxide growth and oxygen evolution on p-Si in neutral aqueous electrolytes

The growth of thin oxide films on wafers of p-Si, (100) orientation, was studied in neutral and acidic aqueous solutions up to 10 V by microelectrochemical (cyclic voltammograms and current transient of potential steps) and microellipsometric measurements. The oxidation occurs according to the high-field law with high-field parameters log(i ₀/A cm^–2)=–13.4±1 and β=10.6±0.1 nm V^–1. The oxide films represent an almost ideal dielectric material with ε=6.5. Oxide growth is not affected by oxygen evolution, which starts at potentials >3 V. The electron transfer process was analysed in relation to the oxygen evolution reaction. Owing to the presence of oxide thicknesses higher than 2 nm at this point, direct tunneling is less probable and a tunneling via traps should be assumed for the charge transfer. Evidence for coupled electronic and ionic conduction is presented. A contribution of the valence band in SiO₂ is stated for the corrosion of oxides at potentials >4.5 V. Electronic Publication     

Concentration of polycyclic aromatic hydrocarbons by chemically modified silver nanoparticles

The ability of silver nanoparticles stabilized by cetyltrimethylammonium bromide (CTAB) to concentrate polycyclic aromatic hydrocarbons (PAHs) from aqueous solutions was shown. It was found that fixed PAH molecules are capable of acting as electronic energy donors and of generating sensibilized fluorescence of silver nanoparticles. It was shown by spectral-luminescent investigations of dilute PAH solutions (5 × 10⁻¹⁰−1 × 10⁻⁶ g/ml) in the presence of silver nanoparticles (∼0.7 vol %) that the concentration of PAH molecules from solutions occurs due to its sorption on hydrocarbon CTAB radicals in close contact to the surface of metallic silver. On the basis of the spectral data, the sorption isotherms were obtained and the values of extraction degree and partition coefficients for naphthalene, phenanthrene, anthracene, chrysene, pyrene, and 3,4-benzopyrene were calculated. It was found that the degree of extraction values of the investigated PAHs fall within the range of 73–98%, the partition coefficients (logD) ∼ 6, and the concentration coefficients ∼10⁵.