发光区插入超薄LiF层对有机电致发光器件性能的影响

着重对比了在以DCM掺杂Alq₃为发光层的红光器件的发光区插入超薄LiF层后器件性能的改善。插入超薄LiF层后,器件的最大工作电流密度为487 mA/cm²,相应的最大电致发光亮度为76 740 cd/m²,最大外量子效率为5.9%。器件内量子效率为40%,超过了基于有机荧光小分子发光材料的有机电致发光器件的内量子效率的理论极限值25%。对器件内单线态及三线态激子的形成过程进行了分析,并推测:超薄LiF层的插入提高了器件内单线态电荷转移态/三线态电荷转移态的形成比例,进而提高了器件内单线态激子在激子总数中的比例,最终提高了器件的内量子效率。同时,超薄LiF层的插入改变了发光层内局域的内部电场,使器件的外量子效率不仅没有随电流密度的增加而降低,反而非线性增加。     

Large-area fabrication: The next target of perovskite light-emitting diodes

Perovskite materials show exciting potential for light-emitting diodes (LEDs) owing to their intrinsically high photoluminescence efficiency and color purity. The research focusing on perovskite light-emitting diodes (PeLEDs) has experienced an exponential growth in the past six years. The maximum external quantum efficiency of red, green, and blue PeLEDs has surpassed 20%, 20%, and 10%, respectively. Nevertheless, the current PeLEDs are still in the laboratory stage, and the key for further development of PeLEDs is large-area fabrication. In this paper, we briefly discuss the similarities and differences between manufacturing high-quality and large-area PeLEDs and perovskite solar cells. Especially, the general technologies for fabricating large-area perovskite films are also introduced. The effect of charge transport layers and electrodes on large-area devices are discussed as well. Most importantly, we summarize the advances of large-area (active area ≥ 30 mm²) PeLEDs reported since 2017, and describe the methods for optimizing large-area PeLEDs reported in the literature. Finally, the development perspective of PeLEDs is presented for the goal of highly efficient and large-area PeLED fabrication. It is of great significance for the application of PeLEDs in future display and lighting.     

量子垒生长速率对InGaN基绿光LED性能的影响

利用MOCVD技术在图形化Si(111)衬底上生长了InGaN/GaN绿光LED外延材料。在GaN量子垒的生长过程中,保持NH3流量不变,通过调节三乙基镓(TEGa)源的流量来改变垒生长速率,研究了量子垒生长速率对LED性能的影响。使用二次离子质谱仪(SIMS)和荧光显微镜(FLM)分别对量子阱的阱垒界面及晶体质量进行了表征,使用电致发光测试系统对LED光电性能进行了表征。实验结果表明,垒慢速生长,在整个测试电流密度范围内,外量子效率(EQE)明显提升。我们认为,小电流密度下,EQE的提升归结为量子阱晶体质量的改善;而大电流密度下,EQE的提升则归结为阱垒界面陡峭程度的提升。     

Temperature-dependent efficiency droop behaviors of GaN-based green light-emitting diodes

The efficiency droop behaviors of GaN-based green light-emitting diodes (LEDs) are studied as a function of temperature from 300 K to 480 K. The overall quantum efficiency of the green LEDs is found to degrade as temperature increases, which is mainly caused by activation of new non-radiative recombination centers within the LED active layer. Meanwhile, the external quantum efficiency of the green LEDs starts to decrease at low injection current level (<1 A/cm2 ) with a temperature-insensitive peak-efficiency-current. In contrast, the peak-efficiency-current of a control GaN-based blue LED shows continuous up-shift at higher temperatures. Around the onset point of efficiency droop, the electroluminescence spectra of the green LEDs also exhibit a monotonic blue-shift of peak energy and a reduction of full width at half maximum as injection current increases. Carrier delocalization is believed to play an important role in causing the efficiency droop in GaN-based green LEDs.     

The scalability of the tunnel-regenerated multi-active-region light-emitting diode structure

The scalability of the tunnel-regenerated multi-active-region （TRMAR） structure has been investigated for the application in light-emitting diodes （LEDs）. The use of the TRMAR structure was proved theoretically to have unique advantages over conventional slngle-active-layer structures in virtually every aspect, such as high quantum efficiency, high power and low leakage. Our study showed that the TRMAR LED structure could obtain high output power under low current injection and high wall-plug efficiency compared with the conventional single-active-layer LED structure.     

The scalability of the tunnel-regenerated multi-active-region light-emitting diode structure

The scalability of the tunnel-regenerated multi-active-region (TRMAR) structure has been investigated for the application in light-emitting diodes (LEDs). The use of the TRMAR structure was proved theoretically to have unique advantages over conventional single-active-layer structures in virtually every aspect, such as high quantum efficiency, high power and low leakage. Our study showed that the TRMAR LED structure could obtain high output power under low current injection and high wall-plug efficiency compared with the conventional single-active-layer LED structure.     

Multi-layer ambipolar light-emitting organic field-effect transistors

Mutli-layer light-emitting organic field-effect transistors (OLETs) are shown to have high internal quantum efficiencies approaching 5%, a value much higher than the conventional organic light-emitting diodes (OLEDs). This work re-examines some data reported in the literature on OLETs and put forward a model that explains the charge transport and light emission process. Our analyses suggest that the reported improvements on the internal quantum efficiency of OLETs are directly linked to charge recombination and light emission and is independent of the drain-source current as well as the gate-induced charge density in the accumulation layer. Such independence allows the internal quantum efficiency to increase as the drain-source current decreases. The process differs from the charge transport in OLEDs where recombination and light emission are directly tied to the injected space charge densities thereby preventing the internal quantum efficiency of OLEDs to increase even when the device current is lowered.     

Frontiers in Green Perovskite Light-Emitting Diodes

Perovskite, as a star fluorescent material, has the characteristics of adjustable luminescence peak, high color purity, high photoluminescence quantum yield, and low cost, showing significant potential in the photoelectric field. Among the RGB colors for display devices, green is the most sensitive color for human eyes, and green perovskite light-emitting diodes (GPeLEDs) have aroused much interest in recent years. In this work, the research history of GPeLEDs is reviewed, the perovskites of different dimensions are introduced, and the common synthesis methods of perovskites are discussed. Besides, the strategies to improve the stability and luminous efficiency of GPeLEDs are summarized, including component engineering, phase engineering, ligand engineering, additive engineering, interface engineering, and optical coupling structure strategy. Finally, the development state of GPeLEDs is summarized and prospected. This work is expected to stimulate more unprecedented achievements derived from GPeLEDs, thus promoting their practical applications in future ultra-high-definition displays.     

Efficient blue-green and white organic light-emitting diodes with a small-molecule host and cationic iridium complexes as dopants

Using cationic iridium complexes as dopants and a small molecule, 9,9-bis[4-(3,6-di-tert-butylcarbazol-9-yl)phenyl]fluorene, as the host, efficient organic light-emitting diodes (OLEDs) have been fabricated from a solution process. The blue-green OLEDs achieve a peak current efficiency of 19.8 cd?A^?1 and a maximum brightness of 17700 cd?m^?2. White OLEDs have been fabricated with a peak current efficiency of 16.8 cd?A^?1 and Commission Internationale de l’Éclairage coordinates around (0.37, 0.44). It is suggested that cationic iridium complexes, in addition to their use in light-emitting electrochemical cells, are promising phosphorescent dopants for solution-processed small-molecule OLEDs.     

Status of GaN-based green light-emitting diodes

GaN-based blue light emitting diodes(LEDs) have undergone great development in recent years,but the improvement of green LEDs is still in progress.Currently,the external quantum efficiency(EQE) of GaN-based green LEDs is typically30%,which is much lower than that of top-level blue LEDs.The current challenge with regard to GaN-based green LEDs is to grow a high quality In GaN quantum well(QW) with low strain.Many techniques of improving efficiency are discussed,such as inserting Al GaN between the QW and the barrier,employing prestrained layers beneath the QW and growing semipolar QW.The recent progress of GaN-based green LEDs on Si substrate is also reported:high efficiency,high power green LEDs on Si substrate with 45.2% IQE at 35 A/cm2,and the relevant techniques are detailed.     

The enhanced performance of organic light-emitting diodes by using PCBM as the anode modification layer

[6,6]-Phenyl C₆₁ butyric acid methyl ester (PCBM) is used to modify an indium tin oxide (ITO)-coated substrate. Organic light-emitting diodes (OLEDs) using PCBM as the anode modification layer are fabricated. The dependence of performance on different PCBM thicknesses is also investigated. When the thickness of the PCBM film is appropriate, the brightness and efficiency of OLEDs are enhanced, which is attributed to an enhanced hole injection and an improved carrier balance. The enhancement of hole injection was ascribed to the formation of a dipole layer at the anode/organic interface.     

Field- and thickness-dependent performance of tandem organic light-emitting diodes with buffer-modified fullerene/copper phthalocyanine heterojunction as interconnector

Tandem organic light-emitting diodes (OLEDs) with the buffer-modified fullerene/copper phthalocyanine (LiF/C60/CuPc/MoO₃) as interconnector have been investigated. The properties of tandem OLEDs are dependent on electric field, which is induced by electric-field-dependence of charge generation (by electric filed and photons) and separation in such an interconnector structure. At low electric field, because of less generated-charges and light-absorption of C60/CuPc film, current efficiency and brightness of tandem OLEDs with two emissive units exhibit less than twice higher than those of conventional single-unit device. But more than twofold enhancement of current efficiency and brightness is observed at higher electric field due to a large number of charges generated in the interconnector. Meanwhile, the performance of tandem devices is affected by the thickness of C60 and CuPc. The optimal thickness is related to their exciton diffusion length.     

On the polarization self-screening effect in multiple quantum wells for nitride-based near ultraviolet light-emitting diodes

The tilted energy band in the multiple quantum wells(MQWs) arising from the polarization effect causes the quantum confined Stark effect(QCSE) for [0001] oriented III-nitride-based near ultraviolet light-emitting diodes(NUV LEDs). Here, we prove that the polarization effect in the MQWs for NUV LEDs can be self-screened once the polarization-induced bulk charges are employed by using the alloy-gradient In_xGa_(1-x)N quantum barriers. The numerical calculations demonstrate that the electric field in the quantum wells becomes weak and thereby flattens the energy band in the quantum wells, which accordingly increases the spatial overlap for the electron-hole wave functions. The polarization self-screening effect is further proven by observing the blueshift for the peak emission wavelength in the calculated and the measured emission spectra. Our results also indicate that for NUV LEDs with a small conduction band offset between the quantum well and the quantum barrier,the electron injection efficiency for the proposed structure becomes low. Therefore, we suggest doping the proposed quantum barrier structures with Mg dopants.     

Improved performance of near UV light-emitting diodes with a composition-graded p-AlGaN irregular sawtooth electron-blocking layer

We investigate the performances of the near-ultraviolet(about 350 nm-360 nm) light-emitting diodes(LEDs) each with specifically designed irregular sawtooth electron blocking layer(EBL) by using the APSYS simulation program.The internal quantum efficiencies(IQEs),light output powers,carrier concentrations in the quantum wells,energy-band diagrams,and electrostatic fields are analyzed carefully.The results indicate that the LEDs with composition-graded pAl_xGa_(1-x)N irregular sawtooth EBLs have better performances than their counterparts with stationary component p-AlGaN EBLs.The improvements can be attributed to the improved polarization field in EBL and active region as well as the alleviation of band bending in the EBL/p-AlGaN interface,which results in less electron leakage and better hole injection efficiency,thus reducing efficiency droop and enhancing the radiative recombination rate.     

基于CsPbBr3钙钛矿量子点的高柔性绿光发光二极管

众所周知,柔性信息显示将在未来的光电应用中发挥重要作用。然而,由于电极材料和柔性衬底的选择有限,制备高效、稳定的柔性发光二极管仍然存在巨大的挑战。以光聚合物作为柔性衬底、CsPbBr3量子点作为发光层,成功地制备了柔性钙钛矿发光二极管。为了改善电子的注入和传输,采用Ag作阴极。结果表明,高柔性的钙钛矿发光二极管的最高亮度为10325 cd/m2且具有高色纯度(FWHM=19 nm)。此外,制备的钙钛矿发光二极管具有良好的柔性和机械延展性。在大约180°的弯曲角度下反复弯曲100次后,仍然保持着良好的器件性能。该研究为未来柔性显示器的应用奠定了研究基础。     

Enhanced brightness of organic light-emitting diodes based on Mg:Ag cathode using alkali metal chlorides as an electron injection layer

Different thicknesses of cesium chloride (CsCl) and various alkali metal chlorides were inserted into organic light-emitting diodes (OLEDs) as electron injection layers (EILs). The basic structure of OLED is indium tin oxide (ITO)/N,N′-diphenyl-N,N′-bis(1-napthyl-phenyl)-1.1′-biphenyl-4.4′-diamine (NPB)/tris-(8-hydroxyquinoline) aluminum (Alq₃)/Mg:Ag/Ag. The electroluminescent (EL) performance curves show that both the brightness and efficiency of the OLEDs can be obviously enhanced by using a thin alkali metal chloride layer as an EIL. The electron injection barrier height between the Alq₃ layer and Mg:Ag cathode is reduced by inserting a thin alkali metal chloride as an EIL, which results in enhanced electron injection and electron current. Therefore, a better balance of hole and electron currents at the emissive interface is achieved and consequently the brightness and efficiency of OLEDs are improved.     

低效率滚降、发光颜色稳定的磷光白色有机电致发光器件

本文采用多发光层结构,制备了高亮度下具有高发光效率,同时在较宽亮度范围内发光颜色稳定的白色磷光有机电致发光器件(WOLED).在对双发光层结构磷光OLEDs的发光机制和载流子传输过程进行系统研究的基础上,将两种磷光OLEDs的发光层结构相结合,获得的多发光层结构磷光WOLED最大电流效率和外量子效率分别为34.6 cd/A和13.5%;当亮度为1000 cd/m^2时,其电流效率和外量子效率分别为33.9 cd/A和13.3%,外量子效率滚降仅为1.5%;亮度从1000 cd/m^2增至10000 cd/m^2的过程中,其CIE色度坐标从(0.342,0.403)变化至(0.326,0.392),变化量ΔCIE为(0.016,0.011).     

3D simulation of InGaN/GaN micro-ring light-emitting diodes

We employed the APSYS software to perform 3D electrical and ray-tracing simulations on micro-ring light-emitting diodes (LEDs) to verify previous experimental findings that they have higher extraction efficiency than micro-disk and broad area LEDs. 3D ray-tracing indicates the importance of inter-ring optical interactions. Furthermore we found that the higher light extraction efficiency is at the expense of reduced internal quantum efficiency (IQE) as injection current is increased.     

非周期微纳结构增强有机发光二极管光耦合输出的研究进展

有机发光二极管（OLED）具有功耗低、重量轻、色域宽、响应时间快及对比度高等优点,在全彩平板显示和固态照明等领域均显现出巨大的应用潜力,受到人们的广泛关注.然而,较低的光输出效率使得器件的外量子效率远低于内量子效率,这严重制约了OLED器件的发展和应用.因此如何提高OLED器件的光耦合输出效率已成为备受关注的研究课题.本文主要介绍了采用非周期微纳结构提高OLED器件光耦合输出效率的最新研究进展,对随机微纳透镜结构、光散射介质层、聚合物多孔散射薄膜、随机凹凸波纹结构及随机褶皱结构等多种对器件亮度分布和光谱稳定性无明显影响的光耦合输出技术进行了总结和讨论.最后,对提高OLED器件光耦合输出研究做了总结和展望.