ZBLAN玻璃中Pr3+掺杂离子3P0和1D2能级的发光特性和寿命

对ZBLAN氟锆酸盐玻璃中Pr³⁺掺杂离子³P₀和¹D₂能级的寿命和发光特性进行了较详细的光谱学研究。首先测量了两种掺杂浓度(质量分数分别为1×10^-3,5×10^-3)的Pr³⁺:ZBLAN玻璃的吸收光谱,然后运用时间分辨激光光谱技术测量了³P₀和¹D₂能级在激光单光子共振激发下的荧光发射谱和能级寿命。将不同荧光发射谱带的强度和文献报道的Judd Ofelt理论计算辐射跃迁几率数值做了比较分析,证明了文献中理论计算结果的可靠性。由于浓度猝灭效应,在相同的激发条件下,掺杂浓度为1×10^-3样品的荧光发射强度明显大于5×10^-3样品的荧光发射强度。但是从我们的测量结果看,掺杂浓度对³P₀和¹D₂ 的能级寿命值无显著影响。掺杂浓度为1×10^-3时,Pr³⁺离子³P₀和¹D₂能级的寿命值分别为46,322μ_s。     

注氮GaAs中的深能级及其对自由载流子的补偿

详细研究了注氮n型GaAs中深的和浅的杂质缺陷的电学性质。深能级瞬态谱(DLTS)技术测量表明,能量为140keV和剂量为1×10¹³cm^-2的氮离子注入并经800℃退火30min的GaAs中存在四个电子陷阱,E₁(0.111),E₂(0.234),E₃(0.415),E₄(0.669)和一个空穴陷阱H(0.545),而在能量为20keV和剂量为5×10^{14关键词：}     

Fe+注入植物种子射程实验的Monte-Carlo仿真

研究表明,TRIM程序运算结果与实验测量离子注入种子的射程分布数据相差甚远.本文根据种子微结构的特点,综合考虑多种因素,设计种子微结构模型和运算程序,用Monte-Carlo仿真不同能量（110 keV,20 keV,200 keV）、不同注量（2×10¹⁶ ions·cm^-2,5×10¹⁶ ions·cm^-2,10¹⁷ ions·cm^-2,2×10¹⁷ ions·cm^-2）的Fe⁺注入花生、彩棉、小麦种子的射程分布,结果显示本设计程序仿真的结果与实验测量数据较为吻合.所获得的注入离子与种子微结构相互作用的随机抽样模拟运算方法,为离子注入与生命体相互作用的理论研究提供新的思路.     

溅射制备Ge,Nb共掺杂窄光学带隙和低电阻率的TiO2薄膜

采用射频磁控溅射技术制备了Ge,Nb共掺杂的锐钛矿结构TiO₂薄膜,详细探讨了薄膜的结构、电阻率及光学带隙等性质随Ge,Nb掺杂量、溅射功率和热处理温度等参数的变化,发现Ge,Nb共掺杂可以同时调节TiO₂薄膜的光学带隙和电阻率.体积分数约为6%Nb和20%Ge的共掺杂TiO₂薄膜电阻率由10⁴Ω/cm减小至10^-1Ω/cm,光学带隙由3.2 eV减小至1.9 eV.退火后掺杂TiO₂薄膜不仅显示更低的电阻率,还表现出更强的可见-红外光吸收.结果表明,改变Ge,Nb的掺杂量和退火条件能够制备出电阻率和带隙都可调的TiO₂薄膜.     

Ag离子注入非晶SiO2的光学吸收、拉曼谱和透射电镜研究

能量为200keV的Ag离子，以1×10¹⁶，5×10¹⁶，1×10¹⁷ cm^-2的剂量分别注入到非晶SiO₂玻璃，光学吸收谱显示：注入剂量为1×10¹⁶ cm^-2的样品的光吸收谱为洛伦兹曲线，与Mie理论模拟的曲线形状一致；注入剂量较大的5×10¹⁶，1×10¹⁷ cm^-2的谱线共振吸收增强，峰位红移并出现伴峰. 透射电镜观察分析表明，注入剂量不同的样品中形成的纳米颗粒的大小、形状、分布都不同，注入剂量较大的还会产生明显的表面溅射效应，这些因素都会影响共振吸收的峰形、峰位和峰强. 当注入剂量达到1×10¹⁷ cm^-2时，Ag纳米颗粒内部可能还形成了杂质团簇. 关键词： 离子注入 纳米颗粒 共振吸收 红移     

离子注入硅的椭圆偏振光谱和光性

为了进一步发展测定离子注入损伤层的椭圆偏光法,我们测量了离子注入硅在4000—7000?波长范围内的椭圆偏振光谱,并由此得到它的色散关系。注入条件为150keV,10¹⁵cm^-2和10¹⁶cm^-2的砷离子注入。由于在硅样品表面处形成无定形层,我们用单层模型,从(ψ,Δ)-λ数据计算出(n,k)-λ关系,并可定出损伤层厚度。在～4800?处,出现折射率n的谱峰,峰值约4.9。本文还比较了离子注入损伤层、溅射无定形硅膜层、蒸发无定形硅膜层和单晶硅的实验结果。 关键词：     

Eu3+掺杂5Li2O-1Nb2O5-5TiO2发光陶瓷的制备及性能研究

以Li₂CO₃、Nb₂O₅、TiO₂和Eu₂O₃为原料,采用固相法制备Eu³⁺掺杂的5Li₂CO₃-1Nb₂O₅-5TiO₂（LNT）发光介质陶瓷。通过密度、XRD和荧光光谱测试,对0.2%（质量分数）Eu₂O₃掺杂的陶瓷片进行性能表征。结果表明：1 120℃烧结致密的陶瓷片,其晶相结构为“M-相”与Li₂TiO₃两相复合构成;在400 nm的近紫外光激发下,样品有较强的橙光（592 nm）和红光（615 nm）发射,分别属于Eu³⁺的⁵D₀→⁷F₁的磁偶极跃迁和⁵D₀→⁷F₂的电偶极跃迁。     

离子注入Si损伤分布的光谱法多层分析

应用多层模型和最优化方法,由实验测得的离子注入Si的椭偏光谱以及单晶Si和离子注入非晶Si的光学常数,能分析离子注入Si的损伤分布。我们测量了2.1—4.6eV能量范围的椭偏光谱和光学常数,建立了多层计算模型和最优化方法。在模拟分析的基础上,计算了能量为40keV,剂量分别为4×10¹³和1.4×10¹⁴cm^-2的As⁺注入Si的损伤分布,并与背散射测量的结果比较。用多层模型和最优化方法也能从光谱分析其它物理量的分布,只要这些物理量对光学性质有显著的影响,并且在测量过程中不随光子能量而改变。 关键词：     

锐钛矿金红石的高温原位X射线衍射研究

对TiO₂粉末进行了空气和真空条件下从室温到1200℃的加热原位X射线衍射实验, 得到了空气和真空条件下微米级锐钛矿颗粒转变为金红石的起始温度分别为850℃ 和855℃; 分别修正了空气条件下锐钛矿在(27–850℃)范围和金红石在(900–1200℃) 范围内的晶胞参数和真空条件下锐钛矿在(27–850℃)范围和金红石在(950–1200℃) 范围的晶胞参数, 从而得到了晶胞参数随温度变化的关系, 得到了锐钛矿和金红石在空气中和真空中的热膨胀系数, 并总结了热膨胀系数随温度变化的规律. 室温下锐钛矿在空气条件下的热膨胀系数为 α_a=4.55063×10^-6/℃, α_c=7.7543×10^-6/℃, β=16.85836×10^-6/℃; 真空下为 α_a=4.69429×10^-6/℃, α_c=9.02850×10^-6/℃, β=18.69688×10^-6/℃. 室温下, 金红石在空气条件下的热膨胀系数为 α_a=6.81243×10^-6/℃, α_c=8.71644×10^-6/℃, β=22.22178×10^-6/℃; 真空条件下为 α_a=6.05834×10^-6/℃, α_c= 8.39280×10^-6/℃, β=20.52362×10^-6/℃. 关键词： 2')" href="#">TiO₂ 原位X射线衍射 相转变 热膨胀     

类金刚石膜不同能量下的离子注入

本文对等离子体气相沉积法制备的类金刚石膜(a-C:H)进行了离子注入研究。注入剂量固定为5×10⁵Ar/cm²,注入能量分别为50,100,140和180keV。离子注入前后分别作了红外吸收谱,Raman谱,光学能隙,氢含量和电阻率的测量。结果表明,注入离子破坏了膜中的C—H键,sp²和sp³态都减少,而(sp²/sp³)比值增大;光学能隙E_opt,电阻 关键词：     

Synthesis of Ag metallic nanoparticles by 120 keV Ag− ion implantation in TiO2 matrix

TiO₂ thin film synthesized by the RF sputtering method has been implanted by 120 keV Ag^? ion with different doses (3?×?10¹⁴, 1?×?10¹⁵, 3?×?10¹⁵, 1?×?10¹⁶ and 3?×?10¹⁶ ions/cm²). Further, these were characterized by Rutherford back Scattering, XRD, X-ray photoelectron spectroscopy (XPS), UV–visible and fluorescence spectroscopy. Here we reported that after implantation, localized surface Plasmon resonance has been observed for the fluence 3?×?10¹⁶ ions/cm², which was due to the formation of silver nanoparticles. Ag is in metallic form in the matrix of TiO₂, which is very interestingly as oxidation of Ag was reported after implantation. Also, we have observed the interaction between nanoparticles of Ag and TiO₂, which results in an increasing intensity in lower charge states (Ti³⁺) of Ti. This interaction is supported by XPS and fluorescence spectroscopy, which can help improve photo catalysis and antibacterial properties.     

Synthesis of ZnFe2O4 nanomagnets by Fe-ion implantation into ZnO and post-annealing

Fe ions of dose 8 × 10¹⁶ cm^-2 are implanted into a ZnO single crystal at 180 keV. Annealing at 1073 K leads to the formation of zinc ferrite (ZnFe₂O₄), which is verified by synchrotron radiation X-ray diffraction (SR-XRD) and X-ray photoelectron spectroscopy (XPS). The crystallographically oriented ZnFe₂O₄ is formed inside the ZnO with the orientation relationship of ZnFe₂O₄ (111)//ZnO (0001). Superconducting quantum interference device (SQUID) measurements show that the as-implanted and post-annealing samples are both ferromagnetic at 5 K. The synthesized ZnFe₂O₄ is superparamagnetic, with a blocking temperature (T_B = 25 K), indicated by zero field cooling and field cooling (ZFC/FC) measurements.     

Au5+ ion implantation induced structural phase transitions probed through structural,microstructural and phonon properties in BiFeO3 ceramics,using synergistic ion beam energy

Implanted Au⁵⁺-ion-induced modification in structural and phonon properties of phase pure BiFeO₃ (BFO) ceramics prepared by sol–gel method was investigated. These BFO samples were implanted by 15.8?MeV ions of Au⁵⁺ at various ion fluence ranging from 1?×?10¹⁴ to 5?×?10¹⁵?ions/cm². Effect of Au⁵⁺ ions’ implantation is explained in terms of structural phase transition coupled with amorphization/recrystallization due to ion implantation probed through XRD, SEM, EDX and Raman spectroscopy. XRD patterns show broad diffuse contributions due to amorphization in implanted samples. SEM images show grains collapsing and mounds’ formation over the surface due to mass transport. The peaks of the Raman spectra were broadened and also the peak intensities were decreased for the samples irradiated with 15.8?MeV Au⁵⁺ ions at a fluence of 5?×?10¹⁵?ion/cm². The percentage increase/decrease in amorphization and recrystallization has been estimated from Raman and XRD data, which support the synergistic effects being operative due to comparable nuclear and electronic energy losses at 15.8?MeV Au⁵⁺ ion implantation. Effect of thermal treatment on implanted samples is also probed and discussed.     

Ni离子注入多晶ZrO2的表面电性能和结构

对氧化钇(Y₂O₃)部分稳定氧化锆(ZrO₂)样品在室温下进行了Ni离子注入(140kev,5×10¹⁵-2×10¹⁷ios/cm²)和热退火处理.应用电学测量,Rutherford背散射技术(RBS),X射线光电子能谱(XPS)和喇曼光谱方法研究了Ni离子注入多晶ZrO₂的表面电性能,注入层结构及其热退火的影响。     

离子注入ZnO薄膜的拉曼光谱研究

室温下,用80 keV N⁺和400 keV Xe⁺离子注入ZnO薄膜,注入剂量分别为5.0×10¹⁴—1.0×10¹⁷/cm²和2.0×10¹⁴—5.0×10¹⁵/cm².利用拉曼散射技术对注入前后的ZnO薄膜进行光谱测量和分析,研究了样品的拉曼光谱随离子注入剂量的变化规律.实验结果发现,未进行离子注入的样品在99,435 cm<     

Modification of the magnetic properties of polyimide films by cobalt ion implantation

The magnetic characteristics of polyimide films implanted with Co⁺ ions with an energy of 40 keV in the dose range D = 2.50 × 10¹⁶?1.25 × 10¹⁷ cm^?2 at ion current densities j = 4, 8, and 12 μA/cm² have been investigated. It has been shown that, at implantation doses of less than 5 × 10¹⁶ cm^?2, the superparamagnetic properties of modified samples are described by the Langevin equation. At higher doses, there is an intercluster interaction. It has been found that, with an increase in the ion current, the cluster size decreases. The sizes of the formed clusters are determined and vary in the range from 3.9 to 11.0 nm, depending on the implantation dose.     

P2+和P+注入硅固相外延过程时间分辨的反射率研究

本文以时间分辨的反射率测量结合背散射和沟道分析、透射电子显微镜分析,比较和研究了在77K温度下180keV,1×10¹⁴/cm²P₂⁺和90KeV,2×10¹⁴/cm²P⁺注入硅于550℃退火时的固相外延过程。发现了P₂⁺,P⁺注入硅样品的固相外延过程具有不同的特征。这种差异是由于P₂⁺和P⁺在硅中引入不同的损伤造成的。P⁺注入的硅样品测量得到的时间分辨的反射谱是反常的。这种反常谱可用样品退火时从表面层到非晶硅层与从衬底到非晶硅层的双向外延的过程给出满意的解释。 关键词：     

CEMS study on aluminium implanted iron

Up to now a great deal of investigations in ion beam mixing of iron-aluminium layers are known. However, the easier way to produce such layers by direct implantation of aluminium ions in iron is less studied. In the present work aluminium implanted iron layers are studied. Iron samples were implanted with aluminium ions at 50, 100, and 200 keV, respectively, with doses between 5×10¹⁶ and 5×10¹⁷ cm⁻². Independent of energy, at doses up to 2×10¹⁷ cm⁻², besides alpha iron further magnetic fractions with a Fe₃Al-like structure are formed while at a dose of 5×10¹⁷ cm⁻² amorphous nonmagnetic components are formed.     

Fluence dependant formation of <Emphasis Type="Italic">β</Emphasis>-SiC by ion implantation and thermal annealing

The β-SiC nanocrystals were synthesized by the implantation of carbon ions (C⁻) into silicon followed by high-temperature annealing. The carbon fluences of 1×10¹⁷, 2×10¹⁷, 5×10¹⁷, and 8×10¹⁷ atoms/cm² were implanted at an ion energy of 65 keV. It was observed that the average size of β-SiC crystals decreased and the amount of β-SiC crystals increased with the increase in the implanted fluences when the samples were annealed at 1100 °C for 1 h. However, it was observed that the amount of β-SiC linearly increased with the implanted fluences up to 5×10¹⁷ atoms/cm². Above this fluence the amount of β-SiC appears to saturate. The Fourier Transform Infrared Spectroscopy (FTIR), Raman Spectroscopy, and X-ray diffraction (XRD) techniques were used to characterize the samples.